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Infineon Technologies BF998RE6327HTSA1

Part No.:
BF998RE6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
Package:
SOT-143R
Datasheet:
AetrixBF998RE6327HTSA1.pdf
Description:
RF MOSFET 8V SOT143R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,198

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Product details

Overview

BF998RE6327HTSA1 from Infineon Technologies is a silicon N-channel dual-gate MOSFET tetrode optimized for low-noise, gain-controlled RF amplification up to 800 MHz. It features two independent gates (G1/G2), 9 mA typical IDSS, 24 mS typical forward transconductance (gfs), and 1.8 dB noise figure at 800 MHz - deployed in VHF/UHF receiver front-ends and automotive radar LNA stages.

For engineers reviewing the BF998RE6327HTSA1 datasheet, BF998RE6327HTSA1 pinout, BF998RE6327HTSA1 application, or BF998RE6327HTSA1 equivalent, key selection criteria include dual-gate bias flexibility, sub-2 dB NF at 800 MHz, gain control range of 40–50 dB, thermal resistance ≤370 K/W, and AEC-Q101 qualification for automotive RF modules.

Technical Context

This tetrode structure isolates gate 1 (signal input) from gate 2 (gain control), enabling independent DC biasing and dynamic gain adjustment without signal path disruption. Its short-channel design delivers high S/C quality factor and low feedback capacitance (25 fF), critical for stable broadband amplification.

The device operates with VG2S adjustable from −2 V to +4 V to modulate power gain over 40–50 dB while maintaining 1.8 dB noise figure at 800 MHz and 2.8 dB at 45 MHz - supporting adaptive sensitivity in AM/FM tuners and digital TV front-ends.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max12 V - sets absolute maximum supply rail for RF amplifier stages in 12 V automotive systems
IDSS typ9 mA - defines quiescent current for low-power LNA operation with minimal DC consumption
gfs typ24 mS - enables high small-signal gain per volt of G1 drive in narrowband VHF amplifiers
F @ 800 MHz1.8 dB - ensures minimal degradation of SNR in 700–900 MHz cellular and ISM band receivers
Cg1ss typ2.1 pF - limits input matching network complexity at UHF frequencies while preserving stability
ΔGp40–50 dB - provides wide dynamic range for AGC loops in broadcast tuners and wireless microphones
Rthchs≤370 K/W - supports reliable operation at TS ≤76 °C in sealed automotive enclosures without forced cooling

Pinout & Package

SOT143 package: 4-pin surface-mount plastic package with gull-wing leads, 1.3 mm × 1.7 mm footprint, 0.95 mm height, and RoHS-compliant lead finish.

Pin/TerminalCircuit RoleDesign Meaning
1 (S)SourceCommon source node for both gates; connects to RF ground reference and DC return path
2 (D)DrainRF output node; requires external matching to 50 Ω and DC blocking before next stage
3 (G2)Gain Control GateBias-adjustable terminal for AGC voltage; sets transconductance and power gain dynamically
4 (G1)Signal Input GateHigh-impedance RF input; isolated from G2 to prevent coupling and maintain input match stability

Key Features

FeatureDesign Value
Dual-gate tetrode architectureEnables independent RF input (G1) and gain control (G2) with <25 fF feedback capacitance
AEC-Q101 qualifiedValidated for automotive under-hood temperature cycling (−40 °C to +150 °C) and ESD robustness
Low-noise performance1.8 dB NF at 800 MHz supports high-fidelity reception in digital TV and LTE band 12/13 front-ends
Gain control range40–50 dB modulation via VG2S from −2 V to +4 V, usable in analog AGC and RSSI circuits
Thermal resistance≤370 K/W channel-to-soldering-point allows 200 mW Ptot at TS = 76 °C in compact PCB layouts

Applications

AM/FM Radio Tuner Front-EndDigital TV (DVB-T/T2) LNA

Use Scenario: Low-noise amplification of 87–108 MHz FM and 526–1612 kHz AM broadcast signals in automotive head units.

IC Role / Device Role / Timing Role: Dual-gate MOSFET configured as cascode LNA with G2 biased for fixed gain and G1 receiving antenna signal.

Use Value: 2.8 dB NF at 45 MHz and 40 dB gain control range enable robust weak-signal reception across varying antenna conditions.

Use Scenario: First-stage amplification of 470–862 MHz terrestrial digital TV signals in set-top boxes and integrated TVs.

IC Role / Device Role / Timing Role: Gain-controlled RF amplifier with G2 voltage-tuned to compensate for variable cable loss and multipath fading.

Use Value: 1.8 dB NF at 800 MHz preserves EVM and BER in 64-QAM DVB-T2 demodulation under marginal signal conditions.

Automotive Radar Receiver LNAISM Band Wireless Microphone Preamp

Use Scenario: 76–77 GHz radar receiver chain preamplifier (after downconversion to IF ~100–500 MHz).

IC Role / Device Role / Timing Role: Low-phase-noise IF amplifier with G1 as signal input and G2 grounded for maximum gain stability.

Use Value: ≤370 K/W thermal resistance and AEC-Q101 qualification ensure reliability in engine compartment-mounted radar modules.

Use Scenario: 2.4 GHz ISM-band wireless microphone transmitter front-end (post-mixer, pre-Power Amplifier).

IC Role / Device Role / Timing Role: Variable-gain IF amplifier where G2 adjusts output level to prevent ADC saturation in baseband processing.

Use Value: 50 dB gain control range and 24 mS gfs support wide dynamic input range while maintaining THD <1% at 10 mW output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BFP181E6327HTSA1Higher IDSS (12–20 mA), lower Cg1ss (1.6 pF), same SOT143 package and AEC-Q101 ratingBetter suited for higher-gain, lower-capacitance 45–500 MHz tuners with tighter layout constraintsSelect when >25 mS gfs and <2 pF input capacitance are required for improved 50 Ω matching
BF994RE6327HTSA1Lower NF (1.5 dB @ 800 MHz), reduced ΔGp (35 dB), identical pinout and bias architectureOptimized for ultra-low-noise applications where gain range is secondary to SNR preservationChoose when system-level NF budget is <1.6 dB and AGC range can be relaxed to 35 dB

Compared with BF998RE6327HTSA1, BFP181 offers higher transconductance and lower input capacitance for improved high-frequency matching, while BF994 trades 5 dB of gain control range for 0.3 dB NF reduction - making BF998 the balanced choice for cost-sensitive automotive tuners requiring both noise and AGC performance.

Availability

BF998RE6327HTSA1 is available at Aetrix Electronics and suitable for automotive infotainment systems, broadcast receiver designs, and industrial RF sensor interfaces requiring stable component supply and AEC-Q101 compliance.

Supply support for BF998RE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability discrete devices and embedded security solutions.

BF998 belongs to Infineon's RF bipolar and MOSFET portfolio, designed specifically for low-noise, gain-controllable amplification in automotive and consumer broadcast front-ends up to 1 GHz.

FAQ

What is the recommended gate bias configuration for minimum noise figure?

For minimum noise figure at 800 MHz, bias G1 at 0 V and G2 at +4 V with VDS = 8 V and ID ≈ 10 mA. This configuration yields 1.8 dB NF and 24 mS gfs per datasheet Figure 5. Avoid negative G2 bias in low-noise mode, as it increases F by up to 1.2 dB due to reduced channel conductivity.

Can BF998RE6327HTSA1 be used in a common-source amplifier without gain control?

Yes - tie G2 to +4 V (or VDD) and use G1 as the sole RF input. This fixes transconductance and eliminates gain variation, delivering stable 28 dB power gain at 45 MHz and 20 dB at 800 MHz. The device remains fully functional as a single-gate MOSFET with no performance penalty.

Is thermal derating required above 76 °C case temperature?

Yes - total power dissipation must be linearly derated above TS = 76 °C per the curve on page 4 of the datasheet. At TS = 100 °C, Ptot drops to ~120 mW; at TS = 120 °C, it falls to ~60 mW. PCB copper area and solder joint thermal path directly impact achievable TS in real assemblies.

Does the SOT143 package support reflow soldering per J-STD-020?

Yes - BF998RE6327HTSA1's SOT143 package is qualified for standard Pb-free reflow profiles (peak 260 °C, 20–40 sec above 217 °C). The moisture sensitivity level is MSL 1, allowing unlimited floor life at ≤30 °C/60% RH without dry packing.

BF998RE6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SOT-143R
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N-Channel
Frequency:
45MHz
Gain:
28dB
Voltage - Test:
8 V
Current Rating (Amps):
30mA
Noise Figure:
2.8dB
Current - Test:
10 mA
Power - Output:
-
Voltage - Rated:
12 V
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT-143R-3D

BF998RE6327HTSA1 FAQ

1.How can I place an order for BF998RE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BF998RE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BF998RE6327HTSA1 reliable?

The price and inventory of BF998RE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BF998RE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BF998RE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BF998RE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BF998RE6327HTSA1?

BF998RE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BF998RE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BF998RE6327HTSA1?

For technical support, including BF998RE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BF998RE6327HTSA1 requirements.

6.How does Aetrix verify that BF998RE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BF998RE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BF998RE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BF998RE6327HTSA1?

All BF998RE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BF998RE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BF998RE6327HTSA1 part is unused and in its original packaging.

Return procedure for BF998RE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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