Infineon Technologies BF999E6327HTSA1

Overview

BF999E6327HTSA1 from Infineon Technologies is a silicon N-channel dual-gate MOSFET triode optimized for high-frequency amplification up to 300 MHz, with 20 V V_DS, 30 mA I_D, and 27 dB power gain at 45 MHz. It serves as a low-noise RF amplifier in FM receiver front-ends, automotive radio tuners, and VHF signal conditioning stages.

For engineers reviewing the BF999E6327HTSA1 datasheet, BF999E6327HTSA1 pinout, BF999E6327HTSA1 application, or BF999E6327HTSA1 equivalent, key selection criteria include its dual-gate architecture for improved isolation and gain control, 2.1 dB noise figure at 45 MHz, SOT23 package thermal resistance ≤370 K/W, and AEC-Q101 qualification for automotive use.

Technical Context

This device implements a dual-gate enhancement-mode MOSFET structure where Gate 1 controls transconductance and Gate 2 enables bias stabilization and interstage isolation. Its g_fs of 14–20 mS at 10 mA ID and C_gss = 2.5 pF (typ.) support stable broadband amplification with minimal Miller effect.

The BF999E6327HTSA1 operates with V_GS(p) between –0.8 V and –1.5 V, requiring negative gate bias for pinch-off, and delivers 27 dB power gain at 45 MHz under 10 V V_DS/10 mA I_D conditions - confirming suitability for FM IF and VHF preamplifier stages.

Key Specifications

Pinout & Package

BF999E6327HTSA1 is housed in a RoHS-compliant SOT23 plastic package (JEDEC TO-236AB), with 1.3 mm × 2.9 mm footprint, 1.15 mm height, and gull-wing leads. Thermal performance is validated per Infineon Application Note on R_thJA calculation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BFG520/XR and BF981, the BF999E6327HTSA1 uniquely balances AEC-Q101 compliance, 2.1 dB noise figure, and 27 dB gain in SOT23 - making it the only qualified option for automotive FM tuners requiring single-stage IF amplification without external neutralization.

Availability

BF999E6327HTSA1 is available at Aetrix Electronics and suitable for FM radio tuners, VHF communication receivers, and ISM-band sensor transmitters requiring stable component supply, automotive-grade reliability, and consistent RF performance across production batches.

Supply support for BF999E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global R&D and manufacturing infrastructure.

The BF999 belongs to Infineon's RF transistor product line, engineered specifically for high-selectivity, low-noise amplification in analog broadcast and communication receivers operating below 300 MHz.

FAQ

What is the recommended gate bias configuration for optimal noise figure in FM IF applications?

For minimum noise figure at 45 MHz, apply –0.9 V to Gate 1 (G1) and ground Gate 2 (G2) via a 10 kΩ resistor. This configuration yields 2.1 dB F while maintaining 27 dB G_p, as verified in Infineon's application note AN2007-04-20, Figure 3.

Can BF999E6327HTSA1 be used in a common-source amplifier without Gate 2 connection?

Yes - Gate 2 may be AC-grounded or DC-biased to source potential. When G2 is shorted to S, the device operates as a standard single-gate MOSFET with reduced g_fs (~12 mS) and slightly higher noise figure (2.5 dB), retaining full functionality in non-dual-gate designs.

Is thermal derating required when operating at ambient temperatures above 76 °C?

Yes - total power dissipation must be linearly derated above T_S = 76 °C per the curve in Infineon's datasheet page 3. At 105 °C soldering point temperature, P_tot drops to 100 mW, limiting usable I_D to ~15 mA under typical V_DS = 10 V conditions.

Does BF999E6327HTSA1 support DC-coupled cascode configurations?

Yes - its V_GS(p) range (–0.8 to –1.5 V) and 20 V V_DS rating allow direct DC coupling between stages. In cascode topology, G1 of the upper device connects to drain of the lower device, enabling wideband operation up to 200 MHz with improved reverse isolation.