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Nexperia USA Inc. BFS20W,115

Part No.:
BFS20W,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
SC-70, SOT-323
Datasheet:
AetrixBFS20W,115.pdf
Description:
TRANS NPN 20V 0.025A SOT-323
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,048

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Product details

Overview

BFS20W from Nexperia is an NPN medium-frequency transistor in SOT323 (SC-70) package, designed for IF and VHF amplification stages in thick/thin-film circuits. It features a maximum collector-emitter voltage of 20 V, DC current gain (hFE) of 40–85 at 7 mA/10 V, transition frequency (fT) of 360–470 MHz, and ultra-low feedback capacitance of 350 fF - enabling stable high-frequency operation in compact RF front-ends.

For engineers reviewing the BFS20W datasheet, BFS20W pinout, BFS20W application, or BFS20W equivalent, this device is selected for low-noise, low-power VHF amplifier stages where thermal efficiency, minimal parasitic capacitance, and consistent gain across temperature are critical - especially in space-constrained consumer and industrial RF modules.

Technical Context

The BFS20W operates as a general-purpose NPN RF transistor optimized for medium-frequency signal amplification up to ~500 MHz. Its low VCEO (20 V) and IC (25 mA) rating reflect its role in low-voltage, low-current RF gain blocks rather than power switching or broadband driver stages.

Thermal resistance (Rth j-a) is 625 K/W under standard SOT323 mounting, indicating limited power handling but sufficient for bias-stable small-signal amplifiers. The 350 fF feedback capacitance (Cre) and 1 pF collector capacitance (Cc) minimize Miller effect, supporting predictable gain roll-off and stability in tuned amplifier designs.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO20 V - defines maximum safe collector-emitter voltage in common-emitter configuration; limits use to low-voltage RF stages.
hFE40–85 @ 7 mA/10 V - provides predictable small-signal current gain for fixed-bias or emitter-degenerated amplifiers.
fT360–470 MHz - enables usable gain in VHF bands (e.g., FM radio IF at 10.7 MHz, TV IF at 45.75 MHz, or UHF front-end preamps).
Cre350 fF - minimizes internal feedback, reducing risk of oscillation and easing stability compensation in tuned circuits.
Ptot200 mW @ Tamb ≤ 25 °C - constrains continuous dissipation; requires thermal-aware PCB layout with copper pour under exposed pad (if applicable) or derating above 25 °C.
VBE740–900 mV @ 7 mA/10 V - supports accurate bias network design using standard resistor dividers or current mirrors.

Pinout & Package

SOT323 (SC-70) plastic surface-mount package: 1.35 mm × 1.75 mm × 0.95 mm body, 3-terminal leadless outline with gull-wing leads; thermally efficient for low-power RF use with standard reflow profiles.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl electrode; accepts low-current input signal; requires impedance-matched drive to preserve fT performance.
2EmitterCommon reference node; typically grounded in CE configuration; connects to low-inductance return path for RF stability.
3CollectorOutput node; connects to tuned load or next-stage input; layout must minimize parasitic inductance to sustain VHF gain.

Key Features

FeatureDesign Value
Ultra-low feedback capacitance350 fF typical - directly reduces Miller multiplication, enabling stable >100 MHz amplification without neutralization.
Medium-frequency optimizationfT = 360–470 MHz - balances gain, noise, and bandwidth for IF/VHF applications where full GHz performance is unnecessary.
Low-voltage, low-current operationVCEO = 20 V, IC = 25 mA - simplifies biasing in battery-powered or logic-level compatible RF subsystems.
SOT323 footprint compatibilityStandard SC-70 land pattern - ensures drop-in replacement in existing thin-film and compact PCB layouts without redesign.

Applications

FM Radio IF AmplifierTV Tuner Front-End

Use Scenario: Amplifying 10.7 MHz intermediate frequency signal after mixer stage in portable FM receivers.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with tuned collector load.

Use Value: 350 fF Cre prevents self-oscillation; hFE consistency across −55 °C to +150 °C ensures stable gain in varying ambient conditions.

Use Scenario: First-stage RF amplification in analog/digital TV tuners operating at VHF band (47–230 MHz).

IC Role / Device Role / Timing Role: Low-noise, medium-gain active device in cascode or single-stage amplifier topology.

Use Value: 470 MHz fT supports flat gain response across full VHF range; SOT323 size enables dense tuner module layout.

Wireless Microphone PreampISM Band Sensor Transmitter

Use Scenario: Low-distortion audio preamplification and modulation-stage amplification in 2.4 GHz ISM-band wireless mics.

IC Role / Device Role / Timing Role: Base-driven amplifier feeding varactor or direct-modulation stage.

Use Value: Low VBE variation (740–900 mV) ensures repeatable bias point; 200 mW Ptot allows moderate drive without thermal runaway.

Use Scenario: Transmit buffer in sub-GHz sensor nodes (e.g., 315/433 MHz ASK/OOK transmitters).

IC Role / Device Role / Timing Role: Final gain stage before antenna matching network.

Use Value: 20 V VCEO accommodates common 12 V supply rails with headroom; 350 fF Cre maintains clean spectral purity during keying transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-frequency transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC847BWHigher hFE (110–800), lower fT (300 MHz typ.), same SOT323 package.Better for DC-coupled or low-frequency amplification; less suitable for >250 MHz VHF gain stability.Choose when higher DC gain and wider hFE spread are acceptable, and VHF phase linearity is secondary.
MMBT2222ALT1GHigher VCEO (40 V), higher IC (600 mA), TO-236 (SOT-23) package, fT ≈ 300 MHz.Supports higher supply voltages and output swing; larger package increases parasitic inductance at VHF.Prefer when system requires >25 V operation or higher output current, accepting trade-offs in VHF gain flatness and board area.

Compared with BC847BW and MMBT2222ALT1G, the BFS20W uniquely balances ultra-low Cre, verified VHF fT, and tight thermal profile in SOT323 - making it optimal for miniaturized, temperature-stable IF/VHF amplifiers where feedback control and layout density are prioritized over raw gain or voltage headroom.

Availability

BFS20W is available at Aetrix Electronics and suitable for FM radio IF amplifiers, TV tuner front-ends, wireless microphone preamps, and ISM-band sensor transmitters requiring stable component supply across industrial and consumer production cycles.

Supply support for BFS20W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The BFS20W belongs to Nexperia's legacy RF transistor product line, engineered specifically for medium-frequency amplification in space-constrained, cost-sensitive RF modules where reliability, consistency, and proven VHF behavior are essential.

FAQ

Is BFS20W suitable for 433 MHz ASK transmitter output stages?

Yes - its 360–470 MHz fT, 350 fF Cre, and 20 V VCEO support clean amplification at 433 MHz with proper matching and biasing. Measured VCEsat < 100 mV at IC = 10 mA confirms low-loss switching capability for OOK/ASK modulation, provided thermal design respects 200 mW Ptot derating above 25 °C.

What is the recommended PCB layout practice for BFS20W in VHF applications?

Use short, direct traces for base/emitter/collector connections; place ground plane beneath the SOT323 footprint with minimal clearance; avoid vias in RF paths; implement collector load as chip inductor + capacitor LC tank with shielded routing. Thermal relief for the collector pad improves heat dissipation without compromising RF return path integrity.

Does BFS20W have qualified automotive-grade variants?

No - the BFS20W is not AEC-Q101 qualified. Nexperia offers automotive-qualified alternatives like the PBSS4041T (SOT323, 40 V, fT = 250 MHz) for similar topologies, but BFS20W remains a commercial-grade part intended for consumer, industrial, and computing applications per its original NXP product data sheet status.

Can BFS20W replace BFS17 in existing designs?

Not directly - BFS17 has higher VCEO (30 V), higher fT (650 MHz), and different pinout (TO-18 metal can). While both are NPN RF transistors, BFS20W's lower voltage rating and SOT323 package require PCB redesign and bias recalculations. Use only after verifying gain, stability, and thermal margins at target frequency and supply conditions.

BFS20W,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
25 mA
Voltage - Collector Emitter Breakdown (Max):
20 V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 7mA, 10V
Power - Max:
200 mW
Frequency - Transition:
470MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

BFS20W,115 FAQ

1.How can I place an order for BFS20W,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BFS20W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BFS20W,115 reliable?

The price and inventory of BFS20W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BFS20W,115 is usually 5 days.

3.What payment methods are accepted for BFS20W,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BFS20W,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BFS20W,115?

BFS20W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BFS20W,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BFS20W,115?

For technical support, including BFS20W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BFS20W,115 requirements.

6.How does Aetrix verify that BFS20W,115 is sourced from the original manufacturer or authorized distributors?

All BFS20W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BFS20W,115 meets industry standards.

7.What is the process for return or replacement of BFS20W,115?

All BFS20W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BFS20W,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BFS20W,115 part is unused and in its original packaging.

Return procedure for BFS20W,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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