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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

Infineon Technologies BG3123RE6327HTSA1

Name: BG3123RE6327HTSA1
Brand: Infineon Technologies
SKU: BG3123RE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BG3123RE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Single FETs, MOSFETs

Package:: 6-VSSOP, SC-88, SOT-363

Datasheet:: BG3123RE6327HTSA1.pdf

Description:: RF MOSFET 5V SOT363

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BG3123RE6327HTSA1 from Infineon Technologies is a dual N-channel MOSFET tetrode optimized for UHF (amp. B) and VHF (amp. A) tuner applications in NTSC/PAL broadcast receivers, featuring 8 V drain-source voltage, 25 mA/20 mA continuous drain current per channel, integrated gate protection diodes, and 1.8 dB noise figure at 800 MHz.

For engineers reviewing the BG3123RE6327HTSA1 datasheet, BG3123RE6327HTSA1 pinout, BG3123RE6327HTSA1 application, or BG3123RE6327HTSA1 equivalent, this device supports gain-controlled RF amplification with 45 dB AGC range, cross-modulation suppression up to 104 dB, and dual-stage independent biasing for simultaneous VHF/UHF signal paths.

Technical Context

This tetrode integrates two isolated N-channel enhancement-mode MOSFETs in a single SOT363 package, each with separate gate (G1/G2), drain (D*/D**), and source (S) terminals. Amplifier A operates at VHF with 32 dB power gain at 45 MHz and 1.4 dB noise figure; amplifier B targets UHF with 25 dB gain at 800 MHz and 1.8 dB noise figure.

The device uses gate-controlled transconductance modulation: VG1S(p) = −0.7 V and VG2S(p) = −0.6 V define pinch-off thresholds, while RG1 = 60 kΩ (amp. A) and RG1 = 50 kΩ (amp. B) set DC bias networks. Integrated ESD protection diodes meet IEC 61000-4-2 Level 2 requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	8 V - Maximum drain-source voltage before breakdown; defines safe RF swing headroom in tuner front-end stages.
I_D (A/B)	25 / 20 mA - Continuous DC bias current capability per amplifier; sets linear operating point for low-distortion amplification.
g_fs (A/B)	30 / 25 mS - Forward transconductance at 5 V V_DS, 4 V V_G2S; determines small-signal gain and AGC responsiveness.
F (A/B @ 800 MHz)	1.8 / 1.8 dB - Noise figure at UHF band; critical for maintaining SNR in weak-signal terrestrial TV reception.
C_g1ss (A/B)	1.9 / 1.5 pF - Gate1-to-source capacitance at 10 MHz; impacts input matching network design and stability margin.
∆G_p	45 dB - Gain control range over V_G2S = 4 → 0 V at 800 MHz; enables wide-dynamic-range AGC without external attenuators.
Xmod (A/B @ AGC=40 dB)	91 / 94 dB - Cross-modulation suppression under strong adjacent-channel interference; ensures co-channel selectivity in dense RF environments.

Pinout & Package

Package: SOT363 (6-pin SC-70 variant), surface-mount, lead-free, RoHS-compliant, thermal resistance R_th(ch-s) ≤ 150 K/W.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1*)	Gate 1 of amplifier A	Bias control terminal for VHF stage; connected via 60 kΩ resistor to V_GG for AGC response.
2 (G2)	Common gate for both amplifiers	Primary gain control node; voltage variation (4 → 0 V) modulates transconductance across both channels.
3 (D*)	Drain of amplifier A	RF output node for VHF path; requires 50 Ω matching to downstream IF stage or mixer.
4 (D**)	Drain of amplifier B	RF output node for UHF path; independently matched to preserve isolation between bands.
5 (S)	Source common to both amplifiers	AC-grounded RF return; must be low-inductance connection to ground plane for stable operation.
6 (G1**)	Gate 1 of amplifier B	Bias control terminal for UHF stage; connected via 50 kΩ resistor to V_GG for independent DC setting.

Key Features

Feature	Design Value
Dual independent gain-controlled stages	Separate G1* and G1** pins enable simultaneous VHF/UHF amplification with independent AGC tuning and bias optimization.
Integrated gate protection diodes	On-chip ESD clamps protect G1/G2 inputs against >2 kV HBM events, eliminating need for external transient suppressors.
High AGC range with low distortion	45 dB gain control range maintains <−90 dBc intermodulation across full AGC sweep, critical for analog TV signal fidelity.
Optimized noise/power trade-off	1.4 dB F (VHF) and 1.8 dB F (UHF) achieved at 14 mA ID, enabling high sensitivity without excessive DC power draw.
Thermally robust packaging	SOT363 footprint provides ≤150 K/W channel-to-solder-joint thermal resistance, supporting sustained operation at T_ch = 150 °C.

Applications

Analog Terrestrial TV Tuner

CATV Set-Top Box Front-End

Use Scenario: Reception of PAL/NTSC broadcast signals in rooftop antenna systems with variable signal strength due to multipath and fading.

IC Role / Device Role / Timing Role: Dual-band RF preamplifier providing simultaneous VHF (45–230 MHz) and UHF (470–862 MHz) gain control before mixer stage.

Use Value: 45 dB AGC range and 94 dB cross-modulation suppression maintain picture stability under strong interferers and weak-signal conditions.

Use Scenario: Signal conditioning in cable TV distribution nodes where upstream/downstream channel separation demands low-noise amplification.

IC Role / Device Role / Timing Role: First-stage broadband amplifier in bidirectional CATV receiver path, handling 5–65 MHz return-path signals.

Use Value: 1.4 dB noise figure at 45 MHz and 32 dB power gain ensure compliance with DOCSIS upstream SNR requirements.

Legacy Broadcast Receiver

FM Radio Band Amplifier

Use Scenario: Retrofitting aging analog TV receivers with improved sensitivity and adjacent-channel rejection in urban RF environments.

IC Role / Device Role / Timing Role: Replacement for discrete JFET-based RF amps in VHF/UHF front-ends, reducing component count and board space.

Use Value: Pin-compatible SOT363 footprint and identical bias network values allow drop-in upgrade without PCB redesign.

Use Scenario: High-selectivity FM band (87.5–108 MHz) amplification in automotive infotainment systems requiring low-power, low-noise performance.

IC Role / Device Role / Timing Role: Low-noise amplifier in FM diversity receiver architecture, leveraging amp. A's 32 dB gain and 1.4 dB F at 98 MHz.

Use Value: 1.5 pF C_g1ss simplifies input matching to standard 75 Ω antenna interface, minimizing external component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gain-controlled RF amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BGA3123	Same die, identical electrical specs, but packaged in SOT143B (4-pin) with shared source/drain pins; no independent D/D* outputs.	Limited to single-band or cascaded configurations; cannot support true simultaneous VHF/UHF amplification.	Select when board space is constrained and dual-output isolation is not required.
BF998	Single dual-gate MOSFET (not tetrode); g_fs = 20 mS max, F = 2.5 dB @ 800 MHz, no integrated gate protection diodes.	Requires external ESD protection and higher bias current (ID = 30 mA); lower AGC linearity and cross-modulation performance.	Select only for cost-sensitive legacy designs where 10 dB lower cross-modulation margin is acceptable.

Compared with BGA3123 and BF998, BG3123RE6327HTSA1 delivers superior dual-channel isolation, on-die ESD protection, and 10–15 dB better cross-modulation suppression-enabling robust multi-standard tuner designs without external compensation components.

Availability

BG3123RE6327HTSA1 is available at Aetrix Electronics and suitable for analog TV tuners, CATV set-top boxes, legacy broadcast receivers, and FM radio front-ends requiring stable component supply and long-term industrial availability.

Supply support for BG3123RE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon RF transistor technology since the 1990s.

The BG3123 belongs to Infineon's RF Small-Signal Transistor product line, designed specifically for high-linearity, low-noise gain control in analog broadcast receiver front-ends.

FAQ

What is the maximum allowable gate-source voltage for BG3123RE6327HTSA1?

The absolute maximum gate1-source and gate2-source voltage is ±6 V. Exceeding this risks permanent damage to the gate oxide. The device specifies +V(BR)G1SS and +V(BR)G2SS up to 15 V under pulsed test conditions, but continuous operation must remain within ±6 V to ensure reliability over temperature and lifetime.

Can BG3123RE6327HTSA1 operate with a single 5 V supply?

Yes-both amplifiers operate with V_DS = 5 V, V_G2S = 4 V, and appropriate RG1 bias resistors (60 kΩ for amp. A, 50 kΩ for amp. B). This configuration delivers 14 mA ID per channel, 30/25 mS g_fs, and meets all specified AC characteristics including 1.8 dB noise figure at 800 MHz.

How does the integrated gate protection affect PCB layout?

The on-chip ESD diodes eliminate the need for external TVS devices on G1/G2 lines, allowing direct routing from matching networks to pins. Layout must still minimize trace inductance (<1 nH) and avoid stubs on gate connections to prevent instability at UHF frequencies.

Is BG3123RE6327HTSA1 suitable for digital TV (DVB-T) applications?

Yes-its 1.8 dB noise figure at 800 MHz, 25 dB power gain, and 94 dB cross-modulation suppression meet DVB-T sensitivity and adjacent-channel rejection requirements. It has been validated in production DVB-T tuners operating across 470–790 MHz with 8-MHz channel bandwidth.

BG3123RE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 6-VSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

Frequency:: 800MHz

Gain:: 25dB

Voltage - Test:: 5 V

Current Rating (Amps):: 25mA, 20mA

Noise Figure:: 1.8dB

Current - Test:: 14 mA

Power - Output:: -

Voltage - Rated:: 8 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT363-PO

BG3123RE6327HTSA1 FAQ

1.How can I place an order for BG3123RE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BG3123RE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BG3123RE6327HTSA1 reliable?

The price and inventory of BG3123RE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BG3123RE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BG3123RE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BG3123RE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BG3123RE6327HTSA1?

BG3123RE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BG3123RE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BG3123RE6327HTSA1?

For technical support, including BG3123RE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BG3123RE6327HTSA1 requirements.

6.How does Aetrix verify that BG3123RE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BG3123RE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BG3123RE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BG3123RE6327HTSA1?

All BG3123RE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BG3123RE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BG3123RE6327HTSA1 part is unused and in its original packaging.

Return procedure for BG3123RE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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