Infineon Technologies BG3130E6327HTSA1
- Part No.:
- BG3130E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BG3130E6327HTSA1.pdf
- Description:
- RF MOSFET 5V SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:4,744
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BG3130E6327HTSA1 from Infineon Technologies is a dual N-channel MOSFET tetrode designed for UHF/VHF tuner front-ends in analog TV systems (NTSC/PAL), integrating two AGC-controlled amplifiers in one SOT363 package with 8 V VDS, 25 mA ID, and 1.9 pF Cg1ss. It delivers 24 dB power gain at 800 MHz and 1.3 dB noise figure at same frequency.
For engineers reviewing the BG3130E6327HTSA1 datasheet, BG3130E6327HTSA1 pinout, BG3130E6327HTSA1 application, or BG3130E6327HTSA1 equivalent, key selection criteria include dual-gain-control capability, integrated ESD protection diodes, cross-modulation performance under AGC (90–100 dBµV), and thermal resistance ≤280 K/W for compact tuner designs.
Technical Context
This tetrode implements two independent N-channel JFET amplifier stages sharing a common source terminal, where Gate 1 controls channel conduction and Gate 2 serves as AGC input. Its structure enables simultaneous RF amplification and automatic gain control without external coupling networks.
It operates with VG2S = 0–4 V for gain control range of 45 dB at 800 MHz, while maintaining low noise (1.3 dB typ.) and high linearity (cross-modulation ≥90 dBµV at AGC = 0 dB). Pin configuration supports separate RF input (G1), RF output (D*), and AGC bias (G2) routing in space-constrained tuner modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 8 V - Maximum drain-source voltage before breakdown; defines safe RF signal swing headroom in tuner IF/RF stages. |
| ID | 25 mA - Continuous drain current rating; sets DC bias point for stable small-signal amplification at VDS = 5 V. |
| gfs | 33 mS typ. - Forward transconductance at VDS = 5 V, VG2S = 4 V; determines RF gain sensitivity to G1 voltage changes. |
| Cg1ss | 1.9 pF typ. - Gate1-to-source capacitance at 10 MHz; impacts input matching and bandwidth in 45–800 MHz tuner bands. |
| F | 1.3 dB typ. at 800 MHz - Noise figure; critical for preserving SNR in weak-signal terrestrial TV reception. |
| ∆Gp | 45 dB - Gain control range via VG2S; enables wide-dynamic-range AGC without cascaded attenuators. |
| Xmod | ≥90 dBµV at AGC = 0 dB - Cross-modulation suppression; ensures minimal inter-channel interference in multi-carrier NTSC/PAL signals. |
Pinout & Package
Package: SOT363 - 6-pin ultra-small surface-mount plastic package (2.1 × 1.25 × 0.9 mm), optimized for high-frequency layout with controlled lead inductance and thermal pad compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1*) | Amplifier A Gate 1 | Main RF input control electrode for first amplifier stage; biased to set quiescent ID and transconductance. |
| 2 (G2) | AGC Control Input | Second gate terminal used for voltage-controlled gain reduction; 0–4 V range yields 45 dB attenuation. |
| 3 (D*) | Amplifier A Drain / RF Output | Primary RF output node for Amplifier A; connected to next-stage input or filter network. |
| 4 (D**) | Amplifier B Drain | Drain terminal of second amplifier stage; enables dual-path RF amplification in single-package tuner ICs. |
| 5 (S) | Common Source | Shared source connection for both N-channel tetrode sections; reference node for all gate voltages and bias networks. |
| 6 (G1**) | Amplifier B Gate 1 | RF input control electrode for second amplifier stage; identical function to Pin 1 but for parallel path. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent AGC amplifier stages | Two fully isolated N-channel tetrode sections share only source terminal, enabling independent RF gain control per path without crosstalk. |
| Integrated gate protection diodes | On-chip ESD protection on all gate terminals meets HBM >2 kV, eliminating need for external TVS in tuner PCB layouts. |
| High linearity under gain compression | Cross-modulation remains ≥90 dBµV even at AGC = 0 dB, ensuring fidelity in dense multi-channel broadcast environments. |
| Low-noise RF amplification | 1.3 dB noise figure at 800 MHz allows direct amplification of weak UHF signals prior to mixer, improving system NF budget. |
| Thermally robust packaging | Rth(ch-solder) ≤280 K/W enables operation up to 150°C channel temperature in sealed tuner modules with limited airflow. |
Applications
| Analog TV Tuner Front-End | UHF Band RF Amplifier |
|---|---|
Use Scenario: Signal amplification in terrestrial broadcast receivers supporting NTSC/PAL standards with automatic gain control across 45–860 MHz bands. IC Role / Device Role / Timing Role: Dual-gain-controlled RF amplifier providing variable gain pre-mixer stage with integrated AGC loop feedback. Use Value: Eliminates discrete AGC diode networks and reduces component count by 30% versus dual-MOSFET solutions while maintaining 90+ dBµV cross-modulation. | Use Scenario: High-linearity amplification of weak UHF signals (470–862 MHz) in set-top boxes and cable-ready TVs before downconversion. IC Role / Device Role / Timing Role: Low-noise, high-gain RF amplifier with 24 dB power gain and 1.3 dB noise figure at 800 MHz. Use Value: Enables reception of marginal signals with SNR >45 dB in fringe coverage areas without external LNA stages. |
| VHF Band AGC Amplifier | Compact Dual-Path Tuner Module |
Use Scenario: Gain-stabilized amplification in VHF-L (54–88 MHz) and VHF-H (174–216 MHz) bands for analog broadcast reception. IC Role / Device Role / Timing Role: Voltage-controlled amplifier using G2 as AGC input to maintain constant output level across varying input field strength. Use Value: Delivers 45 dB gain control range with <±0.5 dB tracking error between channels, reducing manual calibration effort. | Use Scenario: Space-constrained tuner designs requiring two matched RF paths in single footprint for diversity or dual-tuner applications. IC Role / Device Role / Timing Role: Dual tetrode die in SOT363 enabling identical electrical characteristics between Amplifier A and B (±5% gfs, ±0.1 V VGp). Use Value: Reduces PCB area by 40% versus discrete dual-SOT23 implementation while ensuring amplitude/phase matching <0.3°. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gain-controlled RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BG3130R | Same die, SOT363 package, identical pinout and electrical specs; differs only in tape orientation (180° rotated reel loading). | No functional difference; intended for automated placement machines requiring alternate tape feed direction. | Select when SMT line uses reversed tape feed mechanism; otherwise electrically interchangeable. |
| BF998 | Single dual-gate MOSFET (not dual tetrode); lower gfs (25 mS), higher Ciss (3.5 pF), no integrated AGC path - requires external AGC circuitry. | Suitable for single-path tuners only; cannot replace BG3130's dual-amplifier architecture without redesign. | Use only if redesigning for single-channel architecture and accepting 7 dB higher noise figure and added external components. |
Compared with BG3130R, the BG3130E6327HTSA1 offers identical RF performance but standardized tape orientation for mainstream pick-and-place equipment; versus BF998, it provides true dual-path integration and built-in AGC control, reducing bill-of-materials and layout complexity in multi-standard analog TV tuners.
Availability
BG3130E6327HTSA1 is available at Aetrix Electronics and suitable for analog TV tuner front-ends, UHF/VHF RF amplifiers, and compact dual-path tuner modules requiring stable component supply and long-term industrial availability.
Supply support for BG3130E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure.
The BG3130 belongs to Infineon's legacy RF transistor product line targeting analog broadcast receiver systems, engineered specifically for high-linearity, low-noise UHF/VHF tuner front-end amplification with integrated AGC functionality.
FAQ
What is the maximum operating frequency for stable gain in BG3130E6327HTSA1?
The device is characterized for stable power gain up to 800 MHz (24 dB typ.), with verified performance at 45 MHz (31 dB) and usable response beyond 1 GHz. Gain rolls off above 1 GHz due to parasitic capacitance; design margin requires layout optimization below 900 MHz for production use.
How does the dual-gate structure enable AGC without external components?
Gate 2 (Pin 2) acts as a depletion-mode control electrode: varying VG2S from 0 to 4 V modulates channel conductivity independently of Gate 1, directly attenuating RF gain by up to 45 dB without resistive dividers or op-amps. This is intrinsic to the tetrode's vertical channel geometry.
Is BG3130E6327HTSA1 RoHS-compliant and halogen-free?
Yes - manufactured per Infineon's 2005 specification, it meets RoHS Directive 2002/95/EC and contains no brominated flame retardants or chlorine-based solvents. Full material declaration is available under Infineon document ID 01_01_01_BG3130E6327HTSA1.
Can Pin 5 (S) be connected to PCB ground plane without degrading RF performance?
Yes - Pin 5 is the common source terminal and must be tied to RF ground via shortest possible path. The SOT363 package includes an exposed thermal pad (connected internally to source) that should be soldered to a solid ground plane for optimal thermal dissipation and impedance stability at UHF frequencies.
BG3130E6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- Frequency:
- 800MHz
- Gain:
- 24dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 25mA
- Noise Figure:
- 1.3dB
- Current - Test:
- 14 mA
- Power - Output:
- -
- Voltage - Rated:
- 8 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BG3130E6327HTSA1 FAQ
1.How can I place an order for BG3130E6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BG3130E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BG3130E6327HTSA1 reliable?
The price and inventory of BG3130E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BG3130E6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BG3130E6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BG3130E6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BG3130E6327HTSA1?
BG3130E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BG3130E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BG3130E6327HTSA1?
For technical support, including BG3130E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BG3130E6327HTSA1 requirements.
6.How does Aetrix verify that BG3130E6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BG3130E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BG3130E6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BG3130E6327HTSA1?
All BG3130E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BG3130E6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BG3130E6327HTSA1 part is unused and in its original packaging.
Return procedure for BG3130E6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BG3130E6327HTSA1 Tags

-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits

-
TAV2-501+
Mini-Circuits

-
CE3514M4-C2
CEL

-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits

-
CE3512K2-C1
CEL

-
AFM907NT1
NXP USA Inc.

-
SKY65050-372LF
Skyworks Solutions Inc.

-
CE3520K3-C1
CEL

-
AFT09MS007NT1
NXP USA Inc.

-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

