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Infineon Technologies BG3130H6327XTSA1
- Part No.:
- BG3130H6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single FETs, MOSFETs
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BG3130H6327XTSA1.pdf
- Description:
- RF MOSFET 5V SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:7,303
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Product details
Overview
BG3130H6327XTSA1 from Infineon Technologies is a dual N-channel MOSFET tetrode designed for UHF/VHF tuner front-ends in analog TV systems (NTSC/PAL). It integrates two AGC-controlled amplifiers in one SOT363 package, features ±6 V gate-source voltage rating, 8 V drain-source breakdown, and delivers 24 dB power gain at 800 MHz with 1.3 dB noise figure.
For engineers reviewing the BG3130H6327XTSA1 datasheet, BG3130H6327XTSA1 pinout, BG3130H6327XTSA1 application, or BG3130H6327XTSA1 equivalent, key selection criteria include dual-gain control range (45 dB), cross-modulation suppression (90–100 dBµV), integrated ESD protection, and thermal resistance ≤280 K/W for stable tuner AGC performance.
Technical Context
This dual-gain MOSFET tetrode uses independent gate control: G1 sets channel conduction for amplifier A, while G2 provides AGC bias for amplifier B. Both channels share common source (Pin 5) and drain terminals (Pins 3 & 4), enabling compact VHF/UHF signal path stacking with minimal inter-stage coupling.
Its tetrode architecture separates input (G1) and gain-control (G2) functions per channel, allowing simultaneous RF amplification and dynamic range compression without external AGC loop components. The device operates with VDS = 5 V, VG2S = 4 V bias, delivering typ. 10 mA IDSX and 33 mS forward transconductance under those conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 8 V - Maximum drain-source voltage before breakdown; defines safe RF swing headroom in tuner IF/RF stages. |
| ID | 25 mA - Continuous drain current limit; supports stable small-signal amplification in low-power tuner front-ends. |
| Gp @ 800 MHz | 24 dB - Typical power gain; enables single-stage amplification in UHF band without cascading active devices. |
| F @ 800 MHz | 1.3 dB - Typical noise figure; preserves SNR in weak-signal terrestrial broadcast reception. |
| ∆Gp | 45 dB - Gain control range over VG2S = 4 → 0 V; allows wide-dynamic-range AGC without external attenuators. |
| Rth(ch-s) | ≤280 K/W - Thermal resistance from channel to soldering point; ensures thermal stability under 200 mW Ptot at Tstg = −55…150 °C. |
| Cg1ss | 1.9 pF - Gate1-source capacitance at 10 MHz; minimizes input loading in high-Z tuner preamp nodes. |
Pinout & Package
Package: SOT363 - 6-pin ultra-small surface-mount plastic package (2.1 × 1.25 × 0.9 mm), optimized for high-frequency layout with defined pin 1 marking and 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1*) | Gate 1 of Amplifier A | Primary RF input control terminal for first amplifier stage; referenced to common source (Pin 5). |
| 2 (G2) | Gate 2 of Amplifier B | AGC bias input for second amplifier; adjusts gain dynamically without affecting G1 RF path. |
| 3 (D*) | Drain of Amplifier A | RF output node for Amp A; shares internal routing with Pin 4 for dual-output configuration. |
| 4 (D**) | Drain of Amplifier B | RF output node for Amp B; electrically isolated from Pin 3 but co-packaged for space-constrained tuners. |
| 5 (S) | Common Source | Shared source terminal for both N-channel MOSFETs; serves as AC ground reference and DC return path. |
| 6 (G1**) | Gate 1 of Amplifier B | RF input control for Amp B; functionally identical to Pin 1 but assigned to second channel. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent gain control | Separate G1 (RF input) and G2 (AGC bias) terminals per channel enable simultaneous signal amplification and dynamic range compression. |
| Integrated ESD protection | On-chip gate protection diodes meet HBM >2 kV, eliminating need for external transient suppressors in tuner PCB layouts. |
| High cross-modulation suppression | Xmod = 90–100 dBµV at AGC = 0–40 dB ensures clean multi-channel NTSC/PAL signal separation under strong interferer conditions. |
| Low-noise, high-gain RF operation | 1.3 dB NF + 24 dB Gp at 800 MHz meets stringent analog TV front-end requirements for sensitivity and selectivity. |
Applications
| Analog TV Tuner Front-End | VHF/UHF Signal Amplification |
|---|---|
Use Scenario: RF signal conditioning in terrestrial broadcast receivers supporting NTSC and PAL standards. IC Role / Device Role / Timing Role: Dual-channel AGC amplifier providing variable-gain RF amplification prior to mixer stage. Use Value: 45 dB gain control range and 1.3 dB noise figure maintain picture clarity across varying signal strengths without manual tuning. | Use Scenario: High-frequency amplification in cable-ready set-top boxes and analog TV modules. IC Role / Device Role / Timing Role: Low-noise, high-linearity tetrode MOSFET pair operating at 45–800 MHz. Use Value: Cross-modulation suppression ≥90 dBµV prevents adjacent-channel interference in dense RF environments. |
| Legacy Broadcast Receiver AGC Loop | Compact Dual-Stage RF Preamp |
Use Scenario: Automatic gain control implementation in analog TV IF/RF subsystems with discrete feedback paths. IC Role / Device Role / Timing Role: Integrated dual amplifier with separate G1/G2 control enabling closed-loop AGC without external op-amps or DACs. Use Value: Eliminates 3–4 discrete components per channel, reducing BOM count and PCB area by >30%. | Use Scenario: Space-constrained tuner modules requiring two matched RF gain stages in minimal footprint. IC Role / Device Role / Timing Role: Monolithic dual N-channel tetrode replacing discrete transistor pairs in SAW filter interface circuits. Use Value: Matched gfs (33 mS typ.) and Cg1ss (1.9 pF) ensure consistent channel-to-channel gain and phase response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-gain RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BG3130R | Same die, SOT363 package, identical pinout and electrical specs; differs only in tape orientation (180° rotated reel loading). | No functional difference; used interchangeably where reel handling automation requires alternate orientation. | Select based on SMT line feeder compatibility-not electrical performance. |
| BFP740FESD | Single NPN RF transistor (fT = 45 GHz), no integrated AGC control; requires external bias network and AGC circuitry. | Suitable for fixed-gain LNA designs, not direct AGC replacement; lacks dual-channel tetrode architecture. | Choose only when redesigning for higher frequency (>2 GHz) or discrete AGC loop implementation. |
Compared with BG3130R, this part offers identical RF performance and pinout but differs in reel packaging orientation; versus BFP740FESD, it provides monolithic dual-channel AGC capability absent in the single-transistor solution-critical for legacy tuner cost and size targets.
Availability
BG3130H6327XTSA1 is available at Aetrix Electronics and suitable for analog TV tuner front-ends, VHF/UHF signal amplification, and legacy broadcast receiver AGC loops requiring stable component supply and long-lifecycle support.
Supply support for BG3130H6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and manufacturing infrastructure.
The BG3130 belongs to Infineon's legacy RF transistor product line, engineered specifically for analog broadcast tuner applications requiring integrated dual-channel gain control and ESD-hardened tetrode architecture.
FAQ
What is the maximum allowable gate-source voltage for BG3130H6327XTSA1?
The absolute maximum gate-source voltage is ±6 V for both G1 and G2 terminals, verified per datasheet Section "Maximum Ratings." Exceeding this risks permanent gate oxide damage. Designers must ensure bias networks clamp VG1S and VG2S within this range during power-up, AGC transients, and ESD events.
Can BG3130H6327XTSA1 be used in 5G or Wi-Fi applications?
No-this device is characterized and specified only up to 800 MHz, with optimal performance at 45 MHz and 800 MHz per datasheet AC characteristics. Its gain roll-off, noise figure degradation, and lack of 2.4/5 GHz validation make it unsuitable for modern wireless standards.
How does the tetrode structure improve cross-modulation performance?
The tetrode architecture isolates RF input (G1) from AGC control (G2), preventing gain-control-induced distortion in the signal path. This physical separation-confirmed by measured Xmod = 90–100 dBµV across AGC settings-reduces intermodulation products more effectively than triode or cascode alternatives.
Is BG3130H6327XTSA1 RoHS compliant?
Yes-Infineon confirms RoHS compliance for BG3130H6327XTSA1 per EU Directive 2011/65/EU, with lead-free terminations and halogen-free molding compound. Full compliance documentation is available via Infineon's official product change notices dated 2005 onward.
BG3130H6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- Frequency:
- 800MHz
- Gain:
- 24dB
- Voltage - Test:
- 5 V
- Current Rating (Amps):
- 25mA
- Noise Figure:
- 1.3dB
- Current - Test:
- 14 mA
- Power - Output:
- -
- Voltage - Rated:
- 8 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BG3130H6327XTSA1 FAQ
1.How can I place an order for BG3130H6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BG3130H6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BG3130H6327XTSA1 reliable?
The price and inventory of BG3130H6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BG3130H6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BG3130H6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BG3130H6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BG3130H6327XTSA1?
BG3130H6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BG3130H6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BG3130H6327XTSA1?
For technical support, including BG3130H6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BG3130H6327XTSA1 requirements.
6.How does Aetrix verify that BG3130H6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BG3130H6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BG3130H6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BG3130H6327XTSA1?
All BG3130H6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BG3130H6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BG3130H6327XTSA1 part is unused and in its original packaging.
Return procedure for BG3130H6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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