Infineon Technologies BG3130RH6327XTSA1

Overview

BG3130RH6327XTSA1 from Infineon Technologies is a dual N-channel MOSFET tetrode designed for UHF/VHF tuner AGC amplifier stages in NTSC/PAL broadcast receivers. It integrates two independently controlled gain stages, features gate protection diodes, delivers 24 dB power gain at 800 MHz, 1.3 dB noise figure, and 45 dB gain control range with ≤1.1 pF output capacitance.

For engineers reviewing the BG3130RH6327XTSA1 datasheet, BG3130RH6327XTSA1 pinout, BG3130RH6327XTSA1 application, or BG3130RH6327XTSA1 equivalent, this device supports high-linearity AGC-controlled RF amplification in analog TV tuners where cross-modulation suppression (≥90 dBµV at 40 dB AGC) and thermal stability under 200 mW dissipation are critical selection criteria.

Technical Context

This dual-gate MOSFET operates as two cascaded RF amplifier stages in a single SOT363 package: Gate 1 controls signal input impedance and transconductance (typ. 33 mS), while Gate 2 serves as the AGC voltage terminal (0–4 V range) enabling dynamic gain adjustment without degrading noise performance. Each channel shares common source and drain terminals but maintains independent gate control paths.

The device uses tetrode architecture to decouple input and output capacitances-Cg1ss = 1.9 pF and Cdss = 1.1 pF-minimizing feedback and enabling stable broadband operation up to 800 MHz. Its low pinch-off voltages (VG1S(p) = 0.7 V, VG2S(p) = 0.6 V) support low-voltage AGC biasing and reduce DC power overhead in tuner front-ends.

Key Specifications

Pinout & Package

SOT363 (SC-88) 6-pin ultra-small surface-mount package with 0.65 mm pitch; moisture sensitivity level MSL3; tape-and-reel packaging (3,000 pcs/reel, ø180 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET AGC amplifier applications.

Compared with BFP181W and BF998, BG3130RH6327XTSA1 uniquely integrates dual-channel AGC control, gate protection, and sub-2 pF output capacitance in SOT363-enabling compact, robust tuner front-ends without external gain-setting or protection circuitry.

Availability

BG3130RH6327XTSA1 is available at Aetrix Electronics and suitable for analog TV tuners, PAL/NTSC broadcast receivers, and CATV distribution amplifiers requiring stable component supply across extended production lifecycles.

Supply support for BG3130RH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with headquarters in Munich and global R&D centers.

The BG3130RH6327XTSA1 belongs to Infineon's RF transistor product line, engineered specifically for high-linearity, low-noise analog broadcast tuner applications requiring integrated AGC capability and compact packaging.

FAQ

What is the maximum allowable gate-to-source voltage for Gate 2 during AGC operation?

The absolute maximum Gate 2–source voltage is ±6 V, but functional AGC control occurs within 0–4 V. Exceeding 4 V reduces gain nonlinearly and increases cross-modulation; operation beyond 6 V risks permanent gate oxide damage due to lack of internal clamping above specification limits.

Can BG3130RH6327XTSA1 be used in 5G NR sub-6 GHz front-ends?

No. While its 800 MHz small-signal gain is specified, the device lacks characterization above 1 GHz, has no S-parameter data beyond 800 MHz, and exhibits degraded noise figure and gain flatness outside its intended 45–800 MHz broadcast band-making it unsuitable for 5G NR frequency bands.

How does the common source configuration affect inter-channel isolation?

Shared source connection results in typical inter-channel isolation of 22 dB at 45 MHz and 18 dB at 800 MHz due to substrate coupling. For applications requiring >30 dB isolation, separate source routing with individual bypass capacitors and guard traces is mandatory per Infineon's application note AN2005-09.

Is thermal derating required when operating at ambient temperatures above 85°C?

Yes. Total power dissipation must be linearly derated above 85°C ambient using R_th(ch-s) ≤280 K/W: P_tot = 200 mW × (1 − (T_A − 85)/65). At 125°C ambient, maximum allowed dissipation drops to 123 mW to maintain channel temperature ≤150°C.