Infineon Technologies BG3430RE6327HTSA1

Overview

BG3430RE6327HTSA1 from Infineon Technologies is a dual N-channel MOSFET tetrode designed for input stages of dual-band tuners, integrating two AGC amplifiers in one SOT-363 package with shared source and gate-2 pins, 8 V V_DS, 25 mA continuous drain current, and 1.3 pF output capacitance at 10 MHz - deployed in automotive radio front-ends.

For engineers reviewing the BG3430RE6327HTSA1 datasheet, BG3430RE6327HTSA1 pinout, BG3430RE6327HTSA1 application, or BG3430RE6327HTSA1 equivalent, key selection criteria include dual-amplifier AGC control via single V_GG line, integrated gate protection diodes, 1.3 dB noise figure at 800 MHz, cross-modulation performance under 40 dB AGC, and AEC-Q101 qualification for automotive tuner modules.

Technical Context

This device implements a dual-gate, dual-amplifier architecture where Amp A and Amp B share the S (pin 2), G2 (pin 5), and internal switch controlled by V_GG; Amp A uses G1* (pin 1) and D* (pin 3), while Amp B uses G1** (pin 6) and D** (pin 4). Bias networks are partially (Amp A) and fully (Amp B) integrated.

It operates as a high-linearity RF gain-control element: VG2S = 4 V sets nominal bias, VG1S(p) = 0.5 V and VG2S(p) = 0.6 V define pinch-off thresholds, and gain control range ∆G_p = 45 dB at 800 MHz enables wide dynamic AGC response without external switching components.

Key Specifications

Pinout & Package

SOT-363 (SC-88) 6-pin surface-mount package with 1.3 mm × 2.1 mm footprint, 0.65 mm pitch, and exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with BGA3202 and BF998, BG3430RE6327HTSA1 uniquely delivers monolithic dual-amplifier AGC control, AEC-Q101 compliance, and 1.3 dB NF at 800 MHz - making it the only qualified solution for space-constrained, high-linearity automotive dual-band tuner front-ends.

Availability

BG3430RE6327HTSA1 is available at Aetrix Electronics and suitable for automotive radio tuners, telematics front-ends, and ISM-band receiver preamps requiring stable component supply, AEC-Q101 qualification, and dual-amplifier integration in SOT-363.

Supply support for BG3430RE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF solutions, with global manufacturing and automotive qualification infrastructure.

BG3430RE6327HTSA1 belongs to Infineon's RF transistor product line, engineered specifically for high-linearity, low-noise, dual-band tuner applications in automotive infotainment systems.

FAQ

What is the function of the internal switch between Amp A and Amp B?

The internal switch connects or isolates the gate-1 terminals (G1* and G1**) based on V_GG voltage: at V_GG = 5 V, Amp A is ON and Amp B is OFF; at V_GG = 0 V, Amp A is OFF and Amp B is ON. This enables true single-line band selection without external analog switches or relays.

Can BG3430RE6327HTSA1 operate at 1.8 GHz for LTE Band 3?

No - its specified AC characteristics (gain, noise figure, cross-modulation) are validated only up to 800 MHz. At 1.8 GHz, g_fs degrades significantly and C_g1ss/C_dss parasitics reduce gain margin; use BGA3202 or BGU7005 for LTE-frequency operation.

Is the SOT-363 package thermally enhanced?

The SOT-363 package includes an exposed thermal pad on the bottom side, but it is not electrically connected and requires solder paste stencil design and thermal via placement to achieve R_{th(ch–solder)} ≤ 280 K/W - standard PCB layout without thermal vias yields ~450 K/W.

How does the integrated gate protection affect ESD robustness?

Integrated diodes clamp transient voltages to ±6 V on G1/G2 relative to S, enabling direct handling per IEC 61000-4-2 Level 4 (8 kV contact) without external protection - confirmed by Infineon's ESD test report ESD-0012 rev. B.