Infineon Technologies BG5120KE6327

Overview

BG5120KE6327 from Infineon Technologies is a dual N-channel MOSFET tetrode designed for low-noise, high-dynamic-range AGC amplification in UHF/VHF tuner front-ends (e.g., NTSC/PAL). It integrates two independent RF amplifiers with gate protection diodes, delivers 23–30 dB power gain at 45–800 MHz, achieves 0.7–1.1 dB noise figure, and supports 45 dB AGC range with cross-modulation suppression up to 100 dBµV.

For engineers reviewing the BG5120KE6327 datasheet, BG5120KE6327 pinout, BG5120KE6327 application, or BG5120KE6327 equivalent, this device is selected for RF gain control stages requiring simultaneous low-noise performance, wide AGC range, and dual-channel integration in broadcast tuner signal chains.

Technical Context

This dual-gate MOSFET operates as two independent RF amplifier stages in a single SOT363 package: Gate 1 serves as RF input with 2.2 pF input capacitance and 30 mS forward transconductance; Gate 2 functions as AGC control terminal, enabling voltage-tuned gain adjustment from 45 MHz to 800 MHz. Each channel features separate drain and source terminals with shared ground reference.

It employs tetrode architecture with isolated gate paths, allowing independent biasing of G1 (RF input) and G2 (gain control), while maintaining low cross-modulation (<100 dBµV at 40 dB AGC) and thermal resistance ≤280 K/W from channel to soldering point - critical for stable operation in compact tuner modules.

Key Specifications

Pinout & Package

SOT363 (SC-88) 6-pin plastic package with exposed thermal pad; 180° rotated tape orientation available for automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET AGC amplifier applications.

Compared with BG5120KE6327, BG5121KE6327 trades gain for ruggedness, while BF998 offers superior noise at the expense of integration and AGC coordination - making BG5120KE6327 optimal for space-constrained dual-path tuner designs demanding balanced NF, gain, and control linearity.

Availability

BG5120KE6327 is available at Aetrix Electronics and suitable for TV tuner front-ends, automotive digital radio receivers, and set-top box signal conditioning requiring stable component supply across extended production lifecycles.

Supply support for BG5120KE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification infrastructure.

The BG5120K series belongs to Infineon's RF small-signal MOSFET product line, engineered specifically for analog TV, digital broadcast, and automotive radio tuner applications requiring low-noise, high-linearity gain control in miniaturized packages.

FAQ

What is the recommended gate bias configuration for optimal noise figure in TV tuner applications?

For minimum noise figure at 45 MHz, bias Gate 1 (Pin 1 or 3) at −0.7 V pinch-off voltage with V_G2S = 4 V and V_DS = 5 V. Use 100 kΩ gate resistor (RG1) and bypass capacitors (4.7 nF) on both G1 pins to suppress RF feedback. This configuration achieves 0.7 dB NF while maintaining 12 mA I_DSX for headroom.

How does the shared G2 pin affect independent gain control of the two amplifier channels?

The shared G2 (Pin 2) applies identical AGC voltage to both amplifier channels, enabling synchronized gain reduction - essential for maintaining channel balance in diversity tuners. Independent gain tuning is not supported; differential AGC requires external voltage dividers or dual BG5120K devices with discrete G2 routing.

Is the SOT363 package thermally adequate for continuous 200 mW dissipation in a 4-layer PCB?

No - the 200 mW rating assumes ideal heatsinking to soldering point (R_th(ch-s) ≤ 280 K/W). In standard 4-layer FR-4 with 1 cm² copper pour, derating to 120 mW is required. For full-power operation, use thermal vias under the exposed pad and ≥2 cm² inner-layer copper.

Can BG5120KE6327 replace BF998 in existing designs without layout changes?

No - BG5120KE6327 has six pins and dual-channel topology versus BF998's three-pin single-channel layout. Direct replacement requires PCB redesign to accommodate separate G1/G2/D/S routing and dual-output matching networks. Pin compatibility is not maintained between these families.