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Infineon Technologies BG5120KE6327HTSA1

Part No.:
BG5120KE6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
Package:
6-VSSOP, SC-88, SOT-363
Datasheet:
AetrixBG5120KE6327HTSA1.pdf
Description:
RF MOSFET 5V SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,948

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Product details

BG5120KE6327HTSA1 from Infineon Technologies

BG5120KE6327HTSA1 from Infineon Technologies is a dual N-channel RF tetrode MOSFET designed for low-noise, high-dynamic-range AGC amplifier stages in VHF/UHF tuner front-ends. It integrates two independent amplifiers (A and B) with separate gate controls (G1, G2), 1.1 dB noise figure at 45 MHz, 23 dB typical power gain at 800 MHz, and ±6 V gate-source voltage rating - deployed in NTSC/PAL broadcast tuners requiring simultaneous signal amplification and automatic gain control.

For engineers reviewing the BG5120KE6327HTSA1 datasheet, BG5120KE6327HTSA1 pinout, BG5120KE6327HTSA1 application, or BG5120KE6327HTSA1 equivalent, key selection criteria include its dual-channel AGC architecture, SOT363 package thermal resistance (≤280 K/W), 20 mA continuous drain current per channel, and verified cross-modulation performance down to 87 dBµV at 40 dB AGC.

Technical Context

This device implements a dual-gate, single-channel-per-amplifier tetrode structure where Gate 1 (G1) serves as RF input control and Gate 2 (G2) acts as AGC voltage-controlled gain modulator. Each amplifier operates with independent source (S) and drain (D*, D**) terminals, enabling differential or isolated signal paths.

It supports DC-coupled biasing via external RG1 (100 kΩ typical), delivers stable transconductance (30 mS typ.) across 1–12 mA ID, and maintains sub-1.2 dB noise figure up to 800 MHz while sustaining >45 dB gain control range under VG2S = 0–4 V sweep.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max8 V - sets maximum supply headroom for tuner LNA stages without breakdown risk
ID cont.20 mA per channel - defines usable bias current range for stable small-signal amplification
Noise figure0.7 dB typ. at 45 MHz - enables high-SNR reception in analog TV IF amplifiers
Power gain23 dB typ. at 800 MHz - provides sufficient RF gain for UHF tuner front-end cascading
Gain control range45 dB min. at 800 MHz - allows wide dynamic range compression in AGC loops
Cg1ss2.2 pF typ. - minimizes input loading on preceding mixer or filter stages
Rthchs≤280 K/W - ensures thermal stability in compact SOT363 tuner modules at 200 mW Ptot

Pinout & Package

Package: SOT363 (SC-88), 6-pin plastic surface-mount package with exposed thermal pad (not electrically connected). Pin numbering follows JEDEC standard with 180° tape orientation option.

Pin/TerminalCircuit RoleDesign Meaning
1 (G1*)Amplifier A Gate 1RF input control terminal for channel A; requires DC blocking and impedance matching
2 (G2)Common AGC GateShared gain-control input for both amplifiers; accepts 0–4 V AGC voltage
3 (G1**)Amplifier B Gate 1RF input control terminal for channel B; independent of G1* but same function
4 (D**)Amplifier B DrainRF output node for channel B; connects to bandpass filter or IF transformer
5 (S)Common SourceShared source node for both channels; must be AC-grounded via low-inductance path
6 (D*)Amplifier A DrainRF output node for channel A; routed separately to avoid inter-channel coupling

Key Features

FeatureDesign Value
Dual independent amplifier channelsEnables simultaneous processing of main and diversity antenna signals in tuner ICs
Integrated gate protection diodesPrevents ESD damage during board assembly without external clamping components
Low cross-modulation at gain reductionMaintains 96 dBµV linearity at 10 dB AGC - critical for multi-channel analog TV coexistence
Pb-free RoHS-compliant constructionMeets automotive and consumer electronics environmental compliance requirements (AEC-Q101 qualified)
Thermal design supportDocumented Rthchs ≤280 K/W enables accurate junction temperature estimation in dense tuner layouts

Applications

NTSC Broadcast Tuner Front-EndPAL/SECAM IF Amplifier Stage

Use Scenario: Analog terrestrial TV receiver tuning 45–860 MHz bands with automatic gain adjustment.

IC Role / Device Role / Timing Role: Dual-channel low-noise AGC amplifier providing RF-to-IF signal conditioning before demodulation.

Use Value: 0.7 dB noise figure at 45 MHz and 45 dB gain control range preserve weak-signal sensitivity while suppressing strong adjacent channels.

Use Scenario: PAL decoder subsystem requiring stable IF amplification with minimal distortion.

IC Role / Device Role / Timing Role: High-linearity dual-gate MOSFET used in 38.9 MHz IF strip with variable gain control.

Use Value: Cross-modulation remains ≤87 dBµV at 40 dB AGC, ensuring color fidelity and reduced ghosting in legacy broadcast systems.

Automotive Digital Radio TunerLegacy Set-Top Box RF Front-End

Use Scenario: In-vehicle infotainment system receiving FM/AM and digital radio (DAB) signals.

IC Role / Device Role / Timing Role: RF preamplifier with integrated AGC for wideband tuner IC interface.

Use Value: AEC-Q101 qualification and 150°C channel temperature rating ensure reliability in under-dash thermal environments.

Use Scenario: Cost-sensitive cable/satellite STB supporting analog passthrough mode.

IC Role / Device Role / Timing Role: Low-power dual-channel amplifier enabling backward-compatible NTSC output path.

Use Value: 200 mW total power dissipation and SOT363 footprint reduce PCB area and thermal management complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate RF amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BG5121KE6327HTSA1Higher 1.4 dB noise figure at 45 MHz; identical pinout and AGC rangeSuitable for less demanding IF stages where SNR margin >3 dB is acceptableSelect when lower cost outweighs 0.7 dB NF advantage of BG5120K
BF998,115Single-channel dual-gate MOSFET; no integrated G2 sharing; 1.2 dB NF at 45 MHzRequires discrete dual-device layout for two-channel operationChoose only if board space permits duplication and thermal budget allows higher Ptot per channel

Compared with BG5121KE6327HTSA1 and BF998,115, the BG5120KE6327HTSA1 uniquely delivers dual-channel integration with sub-1 dB noise performance and shared AGC control - reducing component count and inter-stage matching complexity in tuner designs.

Availability

BG5120KE6327HTSA1 is available at Aetrix Electronics and suitable for NTSC/PAL broadcast tuners, automotive digital radio receivers, and legacy set-top box RF front-ends requiring stable component supply and AEC-Q101 compliance.

Supply support for BG5120KE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive-grade components with global manufacturing and quality certification.

The BG5120K belongs to Infineon's RF Small-Signal Transistor product line, engineered specifically for high-linearity, low-noise analog TV and radio tuner applications operating up to 1 GHz.

FAQ

What is the maximum allowable gate-source voltage for BG5120KE6327HTSA1?

The absolute maximum gate-source voltage is ±6 V for both G1 and G2 terminals, as specified in the DC characteristics table. Exceeding this risks permanent gate oxide damage. Designers must ensure bias networks limit VG1S and VG2S within this range under all operating conditions, including power-up transients and ESD events.

Does BG5120KE6327HTSA1 require external gate protection diodes?

No - the device integrates internal gate protection diodes, eliminating the need for external ESD clamps. However, handling precautions for ESD-sensitive devices must still be observed during PCB assembly, and PCB layout should maintain short, low-inductance paths to ground for G1/G2 control lines.

Can BG5120KE6327HTSA1 operate with VG2S = 0 V for full gain mode?

Yes - applying VG2S = 0 V places the device in maximum gain state (Gp ≈ 30 dB at 45 MHz). The AGC characteristic curve confirms AGC = 45 dB at VG2S = 0 V, and the device remains stable with ID ≤ 12 mA under these conditions when biased with VDS = 5 V and RG1 = 100 kΩ.

Is the SOT363 package thermally enhanced?

The SOT363 package includes an exposed thermal pad that improves heat conduction from the die to the PCB. While not electrically active, proper soldering of this pad to a copper pour significantly reduces RthJA. Thermal resistance from channel to soldering point is specified as ≤280 K/W, confirming its suitability for continuous 200 mW operation in compact tuner modules.

BG5120KE6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
6-VSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
Frequency:
800MHz
Gain:
23dB
Voltage - Test:
5 V
Current Rating (Amps):
20mA
Noise Figure:
1.1dB
Current - Test:
10 mA
Power - Output:
-
Voltage - Rated:
8 V
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT363-PO

BG5120KE6327HTSA1 FAQ

1.How can I place an order for BG5120KE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BG5120KE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BG5120KE6327HTSA1 reliable?

The price and inventory of BG5120KE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BG5120KE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BG5120KE6327HTSA1?

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4.How is shipping managed for BG5120KE6327HTSA1?

BG5120KE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BG5120KE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BG5120KE6327HTSA1?

For technical support, including BG5120KE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BG5120KE6327HTSA1 requirements.

6.How does Aetrix verify that BG5120KE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BG5120KE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BG5120KE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BG5120KE6327HTSA1?

All BG5120KE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BG5120KE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BG5120KE6327HTSA1 part is unused and in its original packaging.

Return procedure for BG5120KE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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