Infineon Technologies BG5412KE6327HTSA1

Overview

BG5412KE6327HTSA1 from Infineon Technologies is a dual N-channel tetrode MOSFET designed for RF input stages in dual-band tuners, integrating two AGC amplifiers with shared source and gate-2 pins, 8 V V_DS, 25 mA continuous drain current per channel, and ultra-low 0.8–1.2 dB noise figure at 45–800 MHz for high-fidelity signal amplification in broadcast receivers.

For engineers reviewing the BG5412KE6327HTSA1 datasheet, BG5412KE6327HTSA1 pinout, BG5412KE6327HTSA1 application, or BG5412KE6327HTSA1 equivalent, this device supports simultaneous gain control of two RF paths using a single switching line (Pin 3), features on-chip ESD protection diodes, and delivers 24–34 dB power gain across VHF/UHF bands with cross-modulation suppression up to 105 dB.

Technical Context

This dual-gate MOSFET implements independent gate control: Gate 1 (G1A/G1B) sets channel conduction per amplifier, while Gate 2 (shared G2) provides common AGC biasing. The internal switch connects Gate 1 of Amp A or B to ground based on V_GG level, enabling mutually exclusive operation without external logic.

Each amplifier has fully or partially integrated bias networks-Amp A's network is fully integrated, Amp B's includes external R_G1 dependency-and both share Source (Pin 5) and Gate 2 (Pin 2), minimizing layout area and inter-channel coupling in compact tuner modules.

Key Specifications

Pinout & Package

Package: SOT363 (SC-70-6), 6-pin plastic surface-mount package with 0.65 mm pitch, RoHS-compliant, qualified per AEC-Q101 for automotive tuner applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel RF amplifier applications.

Compared with BG5412KE6327HTSA1, BG5411KE6327HTSA1 saves cost and board space in single-path systems but forfeits dual-band switching, while MRF9011LT1G offers superior high-frequency gain but demands full external bias and AGC circuitry-making BG5412K optimal for integrated broadcast tuner front-ends.

Availability

BG5412KE6327HTSA1 is available at Aetrix Electronics and suitable for FM/AM broadcast tuners, automotive infotainment systems, and portable DAB+ receivers requiring stable component supply, AEC-Q101 compliance, and consistent RF performance across production batches.

Supply support for BG5412KE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with leadership in silicon-based RF solutions for broadcast and connectivity markets.

The BG5412K belongs to Infineon's RF Small-Signal Transistor product line, engineered specifically for high-linearity, low-noise amplification in consumer and automotive broadcast tuner applications with integrated AGC functionality.

FAQ

What is the function of Pin 3 (G1**) in BG5412KE6327HTSA1?

Pin 3 serves as the Gate 1 input for Amplifier B and functions as the internal switch control line. When V_GG = 0 V, Amp A activates and Amp B deactivates; when V_GG = 5 V, Amp B activates and Amp A deactivates. This enables single-wire selection between two RF paths without external logic gates or timing synchronization.

How does the shared Gate 2 (Pin 2) affect gain control in dual-channel operation?

Gate 2 (Pin 2) applies a common AGC voltage to both amplifiers, allowing simultaneous gain reduction across both channels. This preserves relative signal integrity during strong-interference events and ensures matched attenuation slopes-critical for stereo or diversity reception where channel balance must remain within ±0.3 dB.

Can BG5412KE6327HTSA1 operate outside the specified 8 V V_DS rating?

No. Exceeding 8 V V_DS risks irreversible avalanche breakdown due to the device's tetrode structure and thin gate oxide. Absolute maximum ratings are strictly enforced; operation above 8 V-even briefly-may cause permanent parameter shift or catastrophic failure, especially under RF stress or temperature cycling.

Is the SOT363 package suitable for reflow soldering in high-volume manufacturing?

Yes. The SOT363 package is qualified for standard lead-free reflow profiles (J-STD-020), including peak temperatures up to 260 °C for 10 seconds. Its thermal resistance (R_th(ch-s) ≤ 280 K/W) and AEC-Q101 qualification confirm robustness in automated SMT lines used for automotive and consumer tuner assembly.