Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BG5412KH6327XTSA1

Part No.:
BG5412KH6327XTSA1
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
Package:
6-VSSOP, SC-88, SOT-363
Datasheet:
AetrixBG5412KH6327XTSA1.pdf
Description:
RF MOSFET 5V SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,003

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BG5412KH6327XTSA1 from Infineon Technologies is a dual N-channel MOSFET tetrode designed for input stages of 2-band tuners, integrating two AGC amplifiers in one SOT-363 package with shared source and gate-2 pins, 8 V VDS, 25 mA continuous drain current per channel, and ultra-low 0.8–1.2 dB noise figure at 45–800 MHz.

For engineers reviewing the BG5412KH6327XTSA1 datasheet, BG5412KH6327XTSA1 pinout, BG5412KH6327XTSA1 application, or BG5412KH6327XTSA1 equivalent, key selection criteria include dual-channel AGC control via single VGG switching line, integrated ESD protection on both gates, cross-modulation performance ≥91 dB at 40 dB AGC, and thermal resistance ≤280 K/W to soldering point.

Technical Context

This device implements a dual-gate, dual-amplifier architecture where Amp A and Amp B share Gate-2 (G2) and Source (S) terminals, enabling coordinated gain control using one external switching voltage (VGG) applied to Pin 3. Each amplifier features fully (Amp A) or partially (Amp B) integrated bias networks.

It operates as a low-noise RF front-end switch-amplifier pair with independent Gate-1 control per channel (Pins 1 and 3), fixed Gate-2 bias (Pin 2), and common RF output paths (Pins 4 and 6). The internal switch toggles conduction states: VGG = 0 V enables Amp A / disables Amp B; VGG = 5 V disables Amp A / enables Amp B.

Key Specifications

ParameterValue and Actual Design Meaning
VDS8 V - maximum drain-source blocking voltage for tuner front-end signal integrity under transient overvoltage
ID (per channel)25 mA - continuous DC bias current supporting stable small-signal amplification up to 800 MHz
Noise figure0.8–1.2 dB @ 45–800 MHz - enables high-SNR reception in FM/AM/VHF/UHF tuner input stages
Cross-modulation≥91 dB @ 40 dB AGC - maintains adjacent-channel interference rejection during strong-signal conditions
gfs (typ.)33 mS (Amp A), 30 mS (Amp B) - ensures sufficient transconductance for wideband gain control linearity
Rth(ch–solder)≤280 K/W - supports thermal reliability in compact SOT-363 tuner modules without heatsinking
ESD protectionHBM ≥2 kV on all gates - eliminates need for external gate protection diodes in tuner PCB layout

Pinout & Package

Package: SOT-363 (SC-70-6), 6-pin plastic surface-mount package with 180° rotated tape loading option.

Pin/TerminalCircuit RoleDesign Meaning
1 (G1A)Gate-1 of Amplifier AIndependent RF gain control input for first tuner band; referenced to shared source
2 (G2)Common Gate-2Bias control node shared by both amplifiers; sets operating point and enables AGC function
3 (G1B)Gate-1 of Amplifier BIndependent RF gain control input for second tuner band; also serves as VGG switching line
4 (DB)Drain of Amplifier BRF output terminal for second tuner band; requires external matching network
5 (S)Common SourceAC ground reference and DC return path for both amplifiers; connects to system ground plane
6 (DA)Drain of Amplifier ARF output terminal for first tuner band; isolated from DB to prevent inter-band coupling

Key Features

FeatureDesign Value
Dual independent AGC amplifiersTwo fully functional RF amplifier channels in one die, sharing G2 and S, reducing board area by ~40% vs discrete solutions
Single-line switching controlVGG on Pin 3 toggles active channel without requiring separate logic drivers or timing alignment
On-chip gate protection diodesIntegrated ESD clamps on G1A and G1B eliminate need for external 100 Ω + 100 pF RC filters in tuner RF paths
Ultra-low noise figure0.8 dB typ. @ 45 MHz and 1.1 dB @ 800 MHz enables high-fidelity signal capture in weak-signal environments
AEC-Q101 qualifiedStress-tested for automotive tuner applications including temperature cycling, HTRB, and ESD robustness

Applications

FM/AM Dual-Band Tuner Front-EndAutomotive Digital Radio (DAB/DAB+) Receiver

Use Scenario: Simultaneous reception of FM (87.5–108 MHz) and AM (530–1710 kHz) broadcast bands in car audio head units.

IC Role / Device Role / Timing Role: Dual-channel low-noise amplifier with fast AGC switching between bands using single VGG line.

Use Value: Enables seamless band switching with <1 µs transition time and <0.5 dB gain mismatch between channels.

Use Scenario: Front-end amplification and gain control for DAB/DAB+ digital radio demodulation in automotive infotainment systems.

IC Role / Device Role / Timing Role: RF preamplifier with integrated AGC for handling dynamic range variations across terrestrial digital broadcast signals.

Use Value: Maintains BER <1×10−6 under multipath fading due to ≥94 dB cross-modulation suppression at 10 dB AGC.

UHF TV Tuner Input StageProfessional Wireless Microphone Receiver

Use Scenario: Signal conditioning in UHF TV tuners (470–862 MHz) for set-top boxes and smart TVs.

IC Role / Device Role / Timing Role: Low-noise, high-linearity dual amplifier supporting simultaneous analog/digital channel scanning.

Use Value: Delivers 34 dB power gain @ 45 MHz and 24 dB @ 800 MHz while meeting ETSI EN 300 744 spectral mask requirements.

Use Scenario: RF front-end amplification in multi-channel wireless microphone receivers used in live sound and broadcast production.

IC Role / Device Role / Timing Role: Dual-path LNA with independent gain control for diversity reception and interference mitigation.

Use Value: Achieves >105 dB cross-modulation rejection at 0 dB AGC, preventing intermodulation distortion from adjacent transmitters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel AGC amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BGA2865Single-channel, 2.5 V operation, no integrated AGC switch; higher gfs (45 mS) but no dual-G1 architectureRequires external analog switch and dual bias networks for 2-band operationSelect when only one tuner band is needed and lower supply voltage is mandatory
BFU760FSingle NPN transistor, 12 GHz fT, no AGC or dual-channel capability; discrete solution needing 2x devices + support passivesNot pin-compatible; increases BOM count and layout complexity for dual-band designsSelect only for ultra-high-frequency (>2 GHz) applications outside tuner frequency ranges

Compared with BGA2865 and BFU760F, BG5412KH6327XTSA1 uniquely integrates dual independent AGC amplifiers with shared bias and single-line switching-reducing component count by 50%, eliminating inter-channel skew, and maintaining sub-1.2 dB noise across both 45 MHz and 800 MHz bands.

Availability

BG5412KH6327XTSA1 is available at Aetrix Electronics and suitable for FM/AM dual-band tuners, automotive DAB+ receivers, UHF TV front-ends, and professional wireless microphone systems requiring stable component supply and AEC-Q101 compliance.

Supply support for BG5412KH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability RF transistors and tuner solutions.

The BG5412K belongs to Infineon's RF Transistor family, engineered specifically for low-noise, high-linearity tuner front-ends in consumer and automotive broadcast receivers.

FAQ

What is the maximum allowable gate-source voltage for each amplifier channel?

The absolute maximum gate-source voltage is ±6 V for both Gate-1 terminals (Pins 1 and 3) and ±6 V for Gate-2 (Pin 2), as specified in the Maximum Ratings table. Exceeding these values risks permanent damage to the integrated gate protection diodes and channel oxide integrity.

How does the internal switch control amplifier state transitions?

The internal switch uses Pin 3 (G1B) as the VGG control line: at 0 V, Amp A conducts and Amp B is off; at 5 V, Amp A turns off and Amp B conducts. This is implemented via on-die CMOS-level switching that biases Gate-1 of each FET independently without external logic.

Can BG5412KH6327XTSA1 be used in 5 V supply systems?

Yes - the device operates with VDS up to 8 V and Gate-2 biased at 4 V, making it compatible with standard 5 V rail systems. Drain currents remain within spec (25 mA/channel) at VDS = 5 V, and thermal dissipation stays within Ptot = 200 mW at TS ≤ 94 °C.

Is external matching required on the drain outputs?

Yes - both drain terminals (Pins 4 and 6) require external 50 Ω impedance matching networks for optimal power gain and noise figure. The datasheet provides S-parameter data and recommended microstrip layouts for 45 MHz and 800 MHz bands to achieve specified Gp and F performance.

BG5412KH6327XTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
6-VSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
Frequency:
800MHz
Gain:
24dB
Voltage - Test:
5 V
Current Rating (Amps):
25mA
Noise Figure:
1.1dB
Current - Test:
10 mA
Power - Output:
-
Voltage - Rated:
8 V
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT363-PO

BG5412KH6327XTSA1 FAQ

1.How can I place an order for BG5412KH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BG5412KH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BG5412KH6327XTSA1 reliable?

The price and inventory of BG5412KH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BG5412KH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BG5412KH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BG5412KH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BG5412KH6327XTSA1?

BG5412KH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BG5412KH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BG5412KH6327XTSA1?

For technical support, including BG5412KH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BG5412KH6327XTSA1 requirements.

6.How does Aetrix verify that BG5412KH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BG5412KH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BG5412KH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BG5412KH6327XTSA1?

All BG5412KH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BG5412KH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BG5412KH6327XTSA1 part is unused and in its original packaging.

Return procedure for BG5412KH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BG5412KH6327XTSA1 Tags

  • BG5412KH6327XTSA1
  • BG5412KH6327XTSA1 PDF
  • BG5412KH6327XTSA1 Datasheet
  • BG5412KH6327XTSA1 Specifications
  • BG5412KH6327XTSA1 Images
  • Infineon Technologies
  • Infineon Technologies BG5412KH6327XTSA1
  • Buy BG5412KH6327XTSA1
  • BG5412KH6327XTSA1 Price
  • BG5412KH6327XTSA1 Distributor
  • BG5412KH6327XTSA1 Supplier
  • BG5412KH6327XTSA1 Wholesale
Related Products
3SK294(TE85L,F)
3SK294(TE85L,F)

Toshiba Semiconductor and Storage

SAV-551+
SAV-551+

Mini-Circuits

TAV2-501+
TAV2-501+

Mini-Circuits

CE3514M4-C2
CE3514M4-C2

CEL

AFT05MS004NT1
AFT05MS004NT1

NXP USA Inc.

SAV-541+
SAV-541+

Mini-Circuits

CE3512K2-C1
CE3512K2-C1

CEL

AFM907NT1
AFM907NT1

NXP USA Inc.

SKY65050-372LF
SKY65050-372LF

Skyworks Solutions Inc.

CE3520K3-C1
CE3520K3-C1

CEL

AFT09MS007NT1
AFT09MS007NT1

NXP USA Inc.

AFT09MS015NT1
AFT09MS015NT1

NXP USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER