NXP Semiconductors BGD802,112

Overview

BGD802,112 from NXP Semiconductors is a hybrid RF power doubler amplifier module designed for CATV distribution systems, delivering 18.5 dB small-signal gain at 860 MHz, operating from a 24 V DC supply, with 395–410 mA total current draw and 75 Ω input/output impedance.

For engineers reviewing the BGD802,112 datasheet, BGD802,112 pinout, BGD802,112 application, or BGD802,112 equivalent, this device serves as a broadband 40–860 MHz amplifier stage in headend and node line-up designs where composite distortion performance (CTB ≥ −66 dB, CSO ≥ −67.5 dB), flat frequency response (±0.2 dB typical), and rugged 75 Ω return loss (s11 ≥ 20 dB across band) are critical selection criteria.

Technical Context

The BGD802,112 implements a monolithic hybrid architecture with silicon nitride passivation and gold metallization, enabling stable operation under 24 V DC bias while tolerating transient supply voltages up to 30 V. Its internal topology supports fixed-gain amplification without external feedback networks.

Designed for 75 Ω CATV infrastructure, the module exhibits low noise figure (4.5 dB typ. @ 50 MHz), high output voltage capability (63.5 dBmV typ.), and robust linearity metrics - including CTB of −66 dB (49-channel), Xmod of −65 dB, and CSO of −67.5 dB - all measured under standardized DIN45004B test conditions.

Key Specifications

Pinout & Package

SOT115J package: rectangular single-ended metal flange housing with 7 gold-plated in-line leads, 2 vertical and 2 horizontal 6-32 UNC mounting holes, and aluminum base for thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power doubler amplifier applications.

Compared with MAX2665ETE+ and QPL9057, the BGD802,112 uniquely combines 24 V ruggedness, 75 Ω native impedance, flange-mount thermal management, and −66 dB CTB performance - making it the only option qualified for production-grade CATV headend and outdoor node deployment without redesign.

Availability

BGD802,112 is available at Aetrix Electronics and suitable for CATV headend amplification, HFC node line-up, CMTS output driver stages, and active splitter modules requiring stable component supply and long-lifecycle support.

Supply support for BGD802,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF, analog, and mixed-signal solutions, with deep expertise in broadband communications and automotive-grade semiconductor design.

The BGD802,112 belongs to NXP's legacy CATV amplifier product line, engineered specifically for reliability and linearity in 75 Ω coaxial cable infrastructure - targeting headend, node, and distribution amplifier applications.

FAQ

What is the recommended operating temperature range for the BGD802,112?

The BGD802,112 is rated for an operating mounting base temperature (Tmb) of −20 °C to +100 °C. This range reflects its suitability for outdoor cabinet installations and thermally demanding headend environments. Derating is not required within this span, and the module maintains specified gain and distortion performance at Tcase = 30–35 °C per datasheet test conditions. The BGD802,112 must be mounted to a thermally conductive surface via its aluminum flange to sustain continuous operation at upper limits.

Does the BGD802,112 require external biasing components or matching networks?

No, the BGD802,112 operates as a fully self-contained hybrid amplifier module with internal biasing and 75 Ω input/output matching. Only local decoupling (10 µF + 100 nF) on the +VB pin (Pin 5) is required. No external baluns, transformers, or LC matching networks are needed for standard 75 Ω CATV signal paths, simplifying PCB layout and reducing bill-of-materials cost. The BGD802,112 achieves s11 ≥ 20 dB and s22 ≥ 20 dB across 40–860 MHz without external tuning.

Can the BGD802,112 be used in 50 Ω RF systems?

The BGD802,112 is optimized for 75 Ω CATV infrastructure and does not provide guaranteed performance in 50 Ω systems. Its s11 and s22 return loss values degrade significantly below 20 dB when terminated in 50 Ω, increasing reflected power and risking instability. While functional with external matching, such adaptation compromises linearity, gain flatness, and thermal reliability. For 50 Ω applications, the BGD802,112 is not recommended - use purpose-built 50 Ω alternatives like QPL9057 instead.

What is the maximum supply voltage transient the BGD802,112 can withstand?

The BGD802,112 is rated to withstand supply transients up to 30 V DC, exceeding its nominal 24 V operating voltage. This margin accommodates inrush currents, line surges, and regulator overshoot in real-world CATV power supplies. Operation above 25 V is limited to transient events only; continuous operation above 24 V increases current draw and thermal stress, potentially shortening lifetime. The BGD802,112 datasheet explicitly confirms this 30 V transient rating in Notes 3 of Tables 1–4.

How does the BGD802,112 perform in multi-channel distortion tests?

The BGD802,112 delivers CTB ≥ −66 dB, CSO ≥ −67.5 dB, and Xmod ≥ −65 dB under standardized 49-channel flat test conditions (Vo = 47 dBmV). These results were measured per DIN45004B methodology at defined frequencies (e.g., fp + fq − fr = 849.25 MHz), confirming its suitability for modern high-density QAM deployments. Performance degrades predictably with increased channel count - e.g., CTB drops to −56.5 dB at 129 channels - but remains within acceptable limits for most regional node applications. The BGD802,112 consistently meets these figures across temperature and supply variations.