My Inquiry
My Account
NXP Semiconductors BGD885,112
- Part No.:
- BGD885,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Video Amps and Modules
- Package:
- SOT-115D
- Datasheet:
-
BGD885,112.pdf
- Description:
- IC AMP CATV SFM9
- Quantity:
- Payment:
- Shipping:
Inventory:2,955
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BGD885 from NXP Semiconductors is a hybrid CATV/MATV power doubler amplifier module operating from 40 to 860 MHz with 17 dB typical power gain, 8 dB noise figure, and 64 dBmV output voltage at 860 MHz under defined test conditions. It functions as a broadband RF driver stage in cable distribution amplifiers, supporting 24 V DC supply and delivering high linearity for multi-carrier signal handling.
For engineers reviewing the BGD885 datasheet, BGD885 pinout, BGD885 application, or BGD885 equivalent, key selection considerations include its SOT115D package with gold-plated leads, 9-pin configuration (including dedicated 10 V/200 mA bias terminal), flatness of ±0.5 dB across 40–860 MHz, and rugged construction with silicon nitride passivation for field-deployed infrastructure.
Technical Context
The BGD885 implements a monolithic hybrid architecture optimized for broadband CATV signal distribution, featuring input/output return loss ≥10 dB across 800–860 MHz and slope compensation of 0.2–1.6 dB over full bandwidth. Its design supports stable operation at 24 V DC with transient tolerance up to 30 V and mounting base temperature range from −20 °C to +100 °C.
Second-order distortion is specified at ≤−53 dB under DIN45004B-compliant two-tone testing, and noise figure remains constant at 8 dB from 50 MHz through 860 MHz - confirming consistent low-noise performance across the entire CATV spectrum.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 40 to 860 MHz - fully covers North American and European CATV spectrum including analog video, digital QAM, and DOCSIS downstream channels. |
| Power Gain | 16.5 to 17.5 dB at 50 MHz - ensures predictable small-signal amplification for cascaded amplifier stages without gain peaking. |
| Noise Figure | 8 dB from 50 to 860 MHz - maintains signal integrity in headend and node amplifiers where cumulative noise degradation must be minimized. |
| Output Voltage | 64 dBmV at 860 MHz (dim = −60 dB) - meets CATV system-level requirements for carrier-to-noise ratio in multi-drop coaxial networks. |
| Current Consumption | ≤450 mA at 24 V - enables thermal management in compact, fanless amplifier housings with aluminum flange heat sinking. |
| Flatness | ±0.5 dB over 40–860 MHz - eliminates need for external equalization in wideband trunk and distribution amplifiers. |
| Input Return Loss | ≥20 dB at 40 MHz, ≥10 dB at 800–860 MHz - reduces reflections and standing waves in 75 Ω coaxial plant interfaces. |
Pinout & Package
SOT115D rectangular single-ended package with aluminum flange, 2 vertical and 2 horizontal 6-32 UNC mounting holes, and 9 gold-plated in-line leads. Designed for direct chassis mounting and RF grounding via flange.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RF Input | 75 Ω matched input port for upstream CATV signal injection; requires external DC blocking capacitor per test circuit. |
| 2, 3, 5, 6, 7 | Common / Ground | Multiple ground terminals provide low-inductance RF return path and thermal conduction to chassis via flange. |
| 4 | Bias Supply (10 V, 200 mA) | Dedicated low-noise bias rail for internal active devices; decoupled with 1 nF ceramic capacitor per datasheet. |
| 8 | +VB (24 V) | Main DC power input; rated for transients up to 30 V; connects to bulk supply with minimal trace inductance. |
| 9 | RF Output | 75 Ω matched output driving downstream coaxial line; output voltage specified at 64 dBmV into 75 Ω load. |
Key Features
| Feature | Design Value |
|---|---|
| Excellent linearity | Second-order distortion ≤−53 dB under DIN45004B two-tone test - prevents intermodulation products in dense channel environments. |
| Extremely low noise | Consistent 8 dB noise figure across 50–860 MHz - preserves carrier-to-noise ratio in multi-stage amplification chains. |
| Silicon nitride passivation | Hermetic protection against moisture and contaminants - extends reliability in humid outdoor amplifier enclosures. |
| Rugged construction | Aluminum flange with mechanical mounting holes and gold metallization - withstands vibration, thermal cycling, and long-term field deployment. |
| Hybrid module architecture | Integrated passive matching and active die in single SOT115D housing - simplifies PCB layout and eliminates discrete tuning components. |
Applications
| Headend Amplifier Stage | Distribution Amplifier Module |
|---|---|
|
Use Scenario: Signal boosting at cable TV headend before splitting to multiple fiber nodes. IC Role / Device Role / Timing Role: Broadband RF power doubler providing first-stage gain with minimal added noise. Use Value: 64 dBmV output at 860 MHz and ±0.5 dB flatness ensure uniform channel loading across full spectrum without per-channel trimming. |
Use Scenario: Mid-span amplification in coaxial trunk lines serving 500+ subscribers. IC Role / Device Role / Timing Role: High-reliability hybrid amplifier with flange-mounted thermal path for continuous operation. Use Value: Silicon nitride passivation and gold metallization enable >15-year field life in uncontrolled environmental enclosures. |
| Two-Way Splitter Amplifier | QAM Signal Repeater |
|
Use Scenario: Bi-directional amplification in HFC network nodes supporting upstream DOCSIS return path. IC Role / Device Role / Timing Role: Forward-path doubler with high input return loss (>10 dB at 800–860 MHz) minimizing echo interference. Use Value: Input return loss ≥10 dB at upper band edge maintains signal fidelity during high-frequency digital channel transmission. |
Use Scenario: Regeneration of 256-QAM downstream signals in aging coaxial plant with signal attenuation. IC Role / Device Role / Timing Role: Low-distortion broadband amplifier preserving modulation error ratio (MER) across 40–860 MHz. Use Value: ≤−53 dB second-order distortion prevents adjacent-channel interference critical for high-order QAM constellations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar broadband RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX2108ETJ+ | SiGe MMIC; 45–1000 MHz; 19 dB gain; 4.5 dB NF; 5 V supply; 16-pin TQFN | Lower voltage, higher integration, no flange cooling - suited for compact indoor modules, not outdoor hardened enclosures | Prefer MAX2108ETJ+ when board space and power efficiency outweigh thermal robustness and legacy 75 Ω interface compatibility. |
| ADL5542ACPZ-R7 | GaAs pHEMT; 30–6000 MHz; 20 dB gain; 2.8 dB NF; 5 V supply; 8-pin LFCSP | Wider bandwidth but higher NF and lower output voltage (22 dBm); no 75 Ω match or CATV-specific linearity specs | Choose ADL5542ACPZ-R7 only for non-CATV broadband IF/RF gain blocks where 860 MHz flatness and 64 dBmV output are not required. |
Compared with MAX2108ETJ+ and ADL5542ACPZ-R7, the BGD885 delivers uniquely optimized 75 Ω CATV performance - including guaranteed 64 dBmV output, ±0.5 dB flatness, and flange-mount thermal design - making it irreplaceable in field-hardened cable infrastructure where reliability and spectral compliance are non-negotiable.
Availability
BGD885 is available at Aetrix Electronics and suitable for CATV headend amplifiers, MATV distribution systems, and two-way HFC node repeaters requiring stable component supply, long-lifecycle support, and proven field reliability in outdoor-rated enclosures.
Supply support for BGD885 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF, analog, and mixed-signal solutions, with deep expertise in broadband communications and automotive-grade semiconductor design.
The BGD885 belongs to NXP's legacy CATV amplifier product line, engineered specifically for cable television infrastructure applications demanding ruggedized hybrid construction, 75 Ω impedance matching, and guaranteed linearity across the full 40–860 MHz band.
FAQ
What is the maximum DC supply voltage rating for the BGD885?
The BGD885 has an absolute maximum DC supply voltage (VB) rating of 26 V, with operational tolerance up to 30 V for short-duration transients as confirmed in Note 5 of the Characteristics section. Continuous operation is specified at 24 V, and exceeding 26 V risks permanent damage per IEC 60134 limiting values.
Does the BGD885 require external biasing components?
Yes, the BGD885 requires external biasing: a 1 nF ceramic capacitor (C1) on pin 4 (10 V bias terminal) and another 1 nF capacitor (C2) on pin 9 (output), as shown in Fig.2 of the datasheet. These decouple RF from DC paths and stabilize bias points under dynamic load conditions.
Is the BGD885 pin-compatible with other NXP CATV amplifier modules like the BGA2001?
No, the BGD885 is not pin-compatible with the BGA2001 or other NXP CATV amplifiers. It uses the unique 9-pin SOT115D package with specific pin assignments (e.g., dedicated 10 V bias on pin 4), whereas BGA2001 uses SOT343 and operates at 5 V with different pinout and impedance characteristics.
What is the thermal mounting requirement for the BGD885?
The BGD885 must be mounted directly to a thermally conductive chassis or heatsink via its aluminum flange using the two vertical 6-32 UNC mounting holes. The datasheet specifies an operating mounting base temperature range of −20 °C to +100 °C, and flange contact is mandatory to maintain total current consumption ≤450 mA at 24 V.
Can the BGD885 be used in DOCSIS 3.1 or 4.0 downstream applications?
Yes, the BGD885 supports DOCSIS 3.1/4.0 downstream channels: its 40–860 MHz bandwidth, ±0.5 dB flatness, ≤−53 dB second-order distortion, and 64 dBmV output meet spectral mask and linearity requirements for 256-QAM and 1024-QAM modulation in legacy and upgraded HFC plants.
BGD885,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Package/Case:
- SOT-115D
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Applications:
- CATV
- Output Type:
- -
- Number of Circuits:
- 1
- -3db Bandwidth:
- -
- Slew Rate:
- -
- Current - Supply:
- 450 mA
- Current - Output / Channel:
- -
- Voltage - Supply, Single/Dual (±):
- -
- Mounting Type:
- Chassis Mount
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- SFM9
BGD885,112 FAQ
1.How can I place an order for BGD885,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for BGD885,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BGD885,112 reliable?
The price and inventory of BGD885,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BGD885,112 is usually 5 days.
3.What payment methods are accepted for BGD885,112?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BGD885,112 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BGD885,112?
BGD885,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BGD885,112 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BGD885,112?
For technical support, including BGD885,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BGD885,112 requirements.
6.How does Aetrix verify that BGD885,112 is sourced from the original manufacturer or authorized distributors?
All BGD885,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BGD885,112 meets industry standards.
7.What is the process for return or replacement of BGD885,112?
All BGD885,112 units undergo pre-shipment inspection (PSI). If there is an issue with BGD885,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BGD885,112 part is unused and in its original packaging.
Return procedure for BGD885,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BGD885,112 Tags
-
LT6552CS8#PBF
Analog Devices Inc.
-
LT6205IS5#TRPBF
Analog Devices Inc.
-
LT6206IMS8#TRPBF
Analog Devices Inc.
-
LT6552CDD#PBF
Analog Devices Inc.
-
LT6552IS8#PBF
Analog Devices Inc.
-
LT1252CS8#PBF
Analog Devices Inc.
-
AD818ARZ-REEL7
Analog Devices Inc.
-
MAX4310EUA+
Analog Devices Inc./Maxim Integrated
-
AD829ARZ
Analog Devices Inc.
-
AD810ARZ
Analog Devices Inc.
-
MAX4310ESA+
Analog Devices Inc./Maxim Integrated
-
MAX4313ESA+
Analog Devices Inc./Maxim Integrated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
