Infineon Technologies BGS15MC172E6433XUSA1

Overview

BGS15MC172E6433XUSA1 from Infineon Technologies is an SP5T RF diversity switch for LTE/WCDMA receive-path applications, featuring 0.1–2.9 GHz frequency coverage, 0.35 dB typical insertion loss at 2.1 GHz, 27 dBm CW RF input power handling, direct battery supply (2.2–5.5 V), and integrated MIPI RFFE interface operating at 1.1–1.95 V.

For engineers reviewing the BGS15MC172E6433XUSA1 datasheet, BGS15MC172E6433XUSA1 pinout, BGS15MC172E6433XUSA1 application, or BGS15MC172E6433XUSA1 equivalent, key selection criteria include Rx port isolation (>25 dB at 2.1 GHz), harmonic suppression (<−45 dBc), ESD robustness (1 kV HBM), ATSLP-12-4 package compatibility, and MIPI register programmability for antenna path selection in multi-band smartphones.

Technical Context

The device implements a single-pole, five-throw (SP5T) RF switch architecture using Infineon's proprietary MOS process, enabling DC-free RF ports without mandatory external blocking capacitors unless DC bias is applied. Its on-chip MIPI RFFE controller supports USID programming and low-power mode entry/exit via SCLK/SDATA signaling.

Operation requires dual supplies: VBAT (2.2–5.5 V) powers the RF path and internal switch logic, while VIO (1.1–1.95 V) powers the digital interface. Startup behavior includes automatic entry into Low Power Mode after VIO power-up, requiring explicit MIPI command to transition to Active Mode with defined settling time (≤1.5 µs).

Key Specifications

Pinout & Package

Package: ATSLP-12-4 (1.1 mm × 1.9 mm × 0.65 mm), leadless, thermally enhanced, RoHS-compliant surface-mount package with exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SP5T RF switch applications.

Compared with QM11020 and SKY16605-362LF, BGS15MC172E6433XUSA1 delivers superior integration (MIPI RFFE + DC-free ports), lower loss, and smaller footprint-making it optimal for high-density, multi-antenna smartphone platforms demanding minimal external components and fast path reconfiguration.

Availability

BGS15MC172E6433XUSA1 is available at Aetrix Electronics and suitable for LTE/WCDMA smartphone designs, cellular tablet modem modules, and industrial IoT gateways requiring stable component supply, consistent RF performance across temperature, and long-term production support.

Supply support for BGS15MC172E6433XUSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, industrial, and RF solutions, with global R&D and manufacturing infrastructure.

The BGS15MA12 product line targets high-performance RF front-end modules for mobile communications, emphasizing integration, ESD resilience, and MIPI-standardized control to simplify antenna diversity implementation in space-constrained devices.

FAQ

What is the maximum allowable DC voltage on the RX1–RX5 ports?

The BGS15MC172E6433XUSA1 specifies zero DC voltage (0 V) on all RF ports per datasheet Table 3. External DC bias requires series blocking capacitors; otherwise, internal MOS structure may be damaged. This constraint ensures safe operation of the DC-free RF switch architecture and preserves harmonic suppression performance.

Does this part require external decoupling capacitors on VBAT?

Yes - a minimum 100 nF ceramic capacitor placed within 1 mm of the VBAT pin is required per datasheet Section 7. This stabilizes the internal charge pump and prevents supply droop during fast RF path transitions, ensuring consistent insertion loss and isolation across operating frequencies.

Can the MIPI RFFE interface operate at 1.2 V VIO?

Yes - the device supports VIO from 1.1 V to 1.95 V, including 1.2 V. At this level, VIH is guaranteed ≥0.84 V and VIL ≤0.36 V, matching standard 1.2 V I/O logic families. No level shifters are needed when interfacing with application processors such as Qualcomm Snapdragon or MediaTek Helio SoCs.

How is thermal performance managed in the ATSLP-12-4 package?

The ATSLP-12-4 package incorporates an exposed thermal pad soldered to a dedicated PCB copper pour. Datasheet Figure 13 recommends ≥8 mm² of 2-oz copper connected via ≥4 thermal vias (0.3 mm diameter) to inner ground planes. This achieves ≤45 °C/W junction-to-board thermal resistance, enabling continuous 27 dBm operation at 85 °C ambient.