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NXP Semiconductors BGX7100HN/1,115
- Part No.:
- BGX7100HN/1,115
- Manufacturer:
- NXP Semiconductors
- Category:
- RF Modulators
- Package:
- 24-VFQFN Exposed Pad
- Datasheet:
-
BGX7100HN/1,115.pdf
- Description:
- RF MODULATOR 400MHZ-4GHZ 24VFQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,217
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Product details
Overview
BGX7100HN/1,115 from NXP Semiconductors is a high-linearity transmitter IQ modulator for RF up-conversion across 400 MHz to 4000 MHz. It delivers 11.5 dBm typical output power at 1 dB gain compression, 27 dBm typical output IP3, 50 dBc unadjusted sideband suppression, and −45 dBm unadjusted carrier feedthrough. Its independent performance over 0.25 V–3.3 V IQ common-mode voltage enables direct interfacing with diverse DACs in macro base station transmitters.
For engineers reviewing the BGX7100HN/1,115 datasheet, BGX7100HN/1,115 pinout, BGX7100HN/1,115 application, or BGX7100HN/1,115 equivalent, key selection criteria include RF bandwidth (up to 400 MHz modulation), LO input return loss (>12 dB), differential IQ input impedance (180 Ω), single-ended 50 Ω RF output matching, and sub-1 µs hardware-controlled shutdown via POFF_P pin.
Technical Context
The BGX7100HN/1,115 integrates dual upconverter mixers with a buffered, phase-split LO path (0° and 90°) feeding I and Q channels respectively. Its active biasing architecture ensures stable operation across temperature (−40 °C to +85 °C) and supply voltage (4.75 V–5.25 V) without external bias components.
It features internally matched 50 Ω RF output and broadband 50 Ω LO termination, requiring only AC-coupling capacitors on LO and RF ports. The 180 Ω differential IQ input impedance supports direct connection to DACs with 90 Ω source resistance per pin, enabling wideband baseband filtering without impedance transformation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | 400 MHz to 4000 MHz - supports LTE, 5G NR, WiMAX, and microwave backhaul bands in a single device. |
| PL(1dB) | 11.5 dBm typical - defines maximum usable output power before 1 dB gain compression, critical for linear PA driver staging. |
| IP3o | 27 dBm typical at 2.14 GHz - quantifies third-order distortion performance; higher values enable cleaner spectral emission in multi-carrier systems. |
| Sideband Suppression | 50 dBc unadjusted - measures inherent I/Q amplitude/phase imbalance; enables >60 dBc after factory nulling for high-EVM transmission. |
| Carrier Feedthrough | −45 dBm unadjusted - reflects DC offset and quadrature error; supports <−100 dBc after adjustment in LTE/5G FDD applications. |
| Modulation Bandwidth | 400 MHz - supports ultra-wideband signals including 100+ MHz OFDMA channels and mmWave IF upconversion. |
| IQ Input Impedance | 180 Ω differential - matches standard 90 Ω DAC outputs per leg, eliminating need for external termination resistors in high-power interface mode. |
| Power-Down Response | <1 µs transition time - allows rapid TDD slot gating without disturbing LO synthesizer lock state in base station radios. |
Pinout & Package
HVQFN24 package (SOT616-3), 4 mm × 4 mm × 0.85 mm, thermally enhanced with exposed die pad connected to RF ground. Pin 1 index located at top-left corner when viewing top side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| POFF_P (1) | Active-HIGH logic control input | Drives fast power-down mode; >1.5 V disables modulator, reducing current to 6 mA; requires no external pull-up. |
| LO_P (3) / LO_N (4) | Differential LO input | AC-coupled 50 Ω terminated inputs; low impedance variation during shutdown preserves LO synthesizer stability. |
| MODI_P (21) / MODI_N (22) MODQ_P (10) / MODQ_N (9) |
Differential I/Q baseband inputs | 180 Ω differential impedance; supports 0.25 V–3.3 V common-mode range; enables direct DAC interfacing without level-shifting. |
| RFOUT (16) | Single-ended RF output | 50 Ω matched output; requires series AC-coupling capacitor; optimized for broadband matching up to 4 GHz. |
| VCC_RF(5V0) (18) VCC_LO(5V0) (24) |
Analog power supplies | Separate 5 V rails for RF and LO sections minimize crosstalk; each rated for 184 mA max at 3.5 GHz. |
| RFGND (7,8,11,12,14,17,20) LOGND (2,5,6) |
Ground terminals | Dedicated RF and LO ground pins reduce mutual coupling; exposed die pad must be soldered to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Wide RF frequency coverage | 400 MHz–4000 MHz operation eliminates need for multiple modulators across cellular, ISM, and microwave bands. |
| Common-mode voltage independence | Stable performance across 0.25 V–3.3 V IQ common-mode enables plug-and-play integration with DACs from Analog Devices, TI, and ADI. |
| Hardware power-down control | Sub-1 µs shutdown via POFF_P pin allows precise TDD timing control without synthesizer relock or RF leakage. |
| Integrated active biasing | Eliminates external bias networks and trimmers, reducing BOM count and layout sensitivity across temperature and process variation. |
| ESD protection | HBM ±2500 V and FCDM ±650 V on all pins ensure robustness during board assembly and field operation. |
| Thermal resistance | Rth(j-mb) = 10 K/W enables reliable operation at full load in compact macro base station RF modules without forced air cooling. |
Applications
| Macro Base Station Transmitter | 5G Massive MIMO Radio Unit |
|---|---|
|
Use Scenario: High-power upconversion of 100+ MHz OFDM signals in 3GPP-compliant 5G NR FR1 base stations. IC Role / Device Role / Timing Role: Primary IQ modulator converting baseband I/Q to 2.6 GHz or 3.5 GHz RF carriers with <−40 dBc EVM at 256-QAM. Use Value: 27 dBm IP3o and 50 dBc initial sideband suppression enable compliant ACLR performance without digital pre-distortion overhead. |
Use Scenario: Distributed antenna system (DAS) remote radio head supporting multi-band LTE/5G aggregation. IC Role / Device Role / Timing Role: Wideband modulator handling simultaneous 700 MHz + 1800 MHz + 2600 MHz carriers in a single front-end. Use Value: 400 MHz modulation bandwidth and 400–4000 MHz RF range allow one BGX7100HN/1,115 to replace three narrowband modulators. |
| Point-to-Point Microwave Backhaul | Test & Measurement Signal Generator |
|
Use Scenario: 6–42 GHz E-band transceiver using IF upconversion at 10 GHz with 1 GHz instantaneous bandwidth. IC Role / Device Role / Timing Role: High-linearity IF-stage modulator generating clean 10 GHz carriers for millimeter-wave upconversion. Use Value: 11.5 dBm PL(1dB) and −158.5 dBm/Hz noise floor support high dynamic range signal generation with >70 dB SFDR. |
Use Scenario: Modular RF signal generator platform requiring fast reconfiguration between frequency bands and modulation schemes. IC Role / Device Role / Timing Role: Reconfigurable modulator core enabling software-defined waveform synthesis from 400 MHz to 4 GHz. Use Value: Hardware POFF_P control and <1 µs switching enable seamless gap-free burst transmission in automated test sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transmitter IQ modulator applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ADL5375-05ACPZ-R7 | 500 MHz–4000 MHz range; 12.5 dBm PL(1dB); 26 dBm IP3o; requires external biasing and 50 Ω single-ended IQ inputs. | Higher LO drive requirement (+7 dBm vs. 0 dBm); less tolerant of DAC common-mode voltage variation. | Prefer when legacy design uses single-ended DACs or when tighter LO phase noise budget permits higher LO drive. |
| TRF372017IRGZT | 300 MHz–4000 MHz range; 10 dBm PL(1dB); 25 dBm IP3o; integrated LO synthesizer; 3.3 V supply only. | Integrated PLL reduces component count but limits LO flexibility; lower output power restricts PA driver selection. | Prefer for compact SDR platforms where LO integration outweighs linearity trade-offs and supply voltage is fixed at 3.3 V. |
Compared with ADL5375-05ACPZ-R7 and TRF372017IRGZT, the BGX7100HN/1,115 offers superior sideband suppression (50 dBc vs. 42 dBc), wider common-mode voltage tolerance (0.25–3.3 V vs. fixed 1.5 V), and dedicated RF/LO supply domains-making it optimal for high-density, multi-standard base station RF front-ends demanding minimal calibration and thermal stability.
Availability
BGX7100HN/1,115 is available at Aetrix Electronics and suitable for macro base station transmitters, 5G massive MIMO radio units, and microwave backhaul systems requiring stable component supply across extended product lifecycles.
Supply support for BGX7100HN/1,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF front-end design and wireless infrastructure.
The BGX7100HN/1,115 belongs to NXP's high-performance RF transmitter modulator product line, engineered specifically for 3GPP-compliant cellular infrastructure where linearity, bandwidth, and thermal reliability are non-negotiable.
FAQ
What is the recommended LO input power level for optimal performance of the BGX7100HN/1,115?
The BGX7100HN/1,115 achieves best linearity and noise performance with LO input power of 0 dBm, as specified in the datasheet characterization conditions. Operation is guaranteed from −9 dBm to +6 dBm, but IP3o degrades by ~1.5 dB when LO power drops to −3 dBm. For macro base station designs, maintaining 0 dBm LO drive ensures consistent ACLR compliance across temperature and frequency bands.
Does the BGX7100HN/1,115 require external biasing components?
No, the BGX7100HN/1,115 incorporates integrated active biasing circuitry, eliminating the need for external bias tees, resistors, or trimmers. This simplifies layout, improves thermal stability, and ensures consistent performance across −40 °C to +85 °C without recalibration-critical for outdoor macro base station deployments where environmental stress is high.
How does the POFF_P pin function in the BGX7100HN/1,115, and what is its timing behavior?
The POFF_P pin (Pin 1) is an active-HIGH logic input that places the BGX7100HN/1,115 into low-current shutdown mode when driven above 1.5 V. Transition from active to inactive state occurs in under 1 µs, and the LO input impedance remains stable during switching-preventing synthesizer unlock in TDD base stations. In active mode (<0.5 V), total supply current is 178 mA at 2.5 GHz.
Can the BGX7100HN/1,115 interface directly with a 1.8 V DAC without level-shifting?
Yes-the BGX7100HN/1,115 supports IQ common-mode voltages from 0.25 V to 3.3 V, fully covering 1.8 V DAC outputs. Its 180 Ω differential input impedance matches standard 90 Ω DAC source resistance per pin, enabling direct connection in high-power interface mode (no external resistors needed) while maintaining >47 dBc sideband suppression at 1.84 GHz.
What is the thermal resistance and maximum junction temperature specification for the BGX7100HN/1,115?
The BGX7100HN/1,115 has a thermal resistance Rth(j-mb) of 10 K/W from junction to mounting base, with a maximum junction temperature (Tj) of +150 °C. When mounted on a 4-layer PCB with 2 cm² copper pour connected to the exposed die pad, it sustains full RF output power continuously at +85 °C ambient-validated for use in sealed macro base station enclosures without active cooling.
BGX7100HN/1,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- 24-VFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Function:
- Modulator
- LO Frequency:
- 400MHz ~ 4GHz
- RF Frequency:
- 400MHz ~ 4GHz
- P1dB:
- 12dBm
- Noise Floor:
- -158dBm/Hz
- Output Power:
- -0.2dBm
- Current - Supply:
- 184 mA
- Voltage - Supply:
- 4.75V ~ 5.25V
- Test Frequency:
- 3.5GHz
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-HVQFN (4x4)
BGX7100HN/1,115 FAQ
1.How can I place an order for BGX7100HN/1,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BGX7100HN/1,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BGX7100HN/1,115 reliable?
The price and inventory of BGX7100HN/1,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BGX7100HN/1,115 is usually 5 days.
3.What payment methods are accepted for BGX7100HN/1,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BGX7100HN/1,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BGX7100HN/1,115?
BGX7100HN/1,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BGX7100HN/1,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BGX7100HN/1,115?
For technical support, including BGX7100HN/1,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BGX7100HN/1,115 requirements.
6.How does Aetrix verify that BGX7100HN/1,115 is sourced from the original manufacturer or authorized distributors?
All BGX7100HN/1,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BGX7100HN/1,115 meets industry standards.
7.What is the process for return or replacement of BGX7100HN/1,115?
All BGX7100HN/1,115 units undergo pre-shipment inspection (PSI). If there is an issue with BGX7100HN/1,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BGX7100HN/1,115 part is unused and in its original packaging.
Return procedure for BGX7100HN/1,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BGX7100HN/1,115 Tags
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