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NXP Semiconductors BGX7100HN/1,118

Part No.:
BGX7100HN/1,118
Manufacturer:
NXP Semiconductors
Category:
RF Modulators
Package:
24-VFQFN Exposed Pad
Datasheet:
AetrixBGX7100HN/1,118.pdf
Description:
RF MODULATOR 400MHZ-4GHZ 24VFQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,143

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Product details

Overview

BGX7100HN/1,118 from NXP Semiconductors is a high-linearity transmitter IQ modulator for RF up-conversion across 400 MHz to 4000 MHz. It delivers 11.5 dBm typical P1dB output power, 27 dBm typical IP3o, 50 dBc unadjusted sideband suppression, and −45 dBm carrier feedthrough. Its hardware-controlled fast power-down (<1 µs) and 5 V single-supply operation make it suitable for mobile base station transmitters requiring broadband modulation fidelity.

For engineers reviewing the BGX7100HN/1,118 datasheet, BGX7100HN/1,118 pinout, BGX7100HN/1,118 application, or BGX7100HN/1,118 equivalent, this page provides verified RF performance data, HVQFN24 package layout, differential I/Q interface design guidance, and validated alternatives for infrastructure-grade RF front-end design.

Technical Context

The BGX7100HN/1,118 integrates dual upconverter mixers with on-chip 0° and 90° LO splitting, enabling direct quadrature modulation without external phase-shift networks. Its 180 Ω differential I/Q input impedance and matched 50 Ω single-ended RF output simplify wideband filter and matching network design.

Performance remains stable across 0.25 V to 3.3 V common-mode voltage, supporting direct interfacing with diverse DAC families. The POFF_P pin enables sub-µs transition between active mode (165–184 mA total supply current) and low-current shutdown (6 mA), with minimal LO port impedance variation during switching-critical for maintaining synthesizer lock in multi-carrier base stations.

Key Specifications

Parameter Value and Actual Design Meaning
RF Frequency Range 400 MHz to 4000 MHz - supports LTE, 5G NR, WiMAX, and microwave backhaul bands in a single device.
P1dB Output Power 11.5 dBm typical - sets usable linear output range before gain compression degrades EVM in wideband OFDM signals.
IP3o 27 dBm typical at 2.14 GHz - determines third-order distortion floor in multi-tone transmission scenarios.
Sideband Suppression 50 dBc unadjusted - defines baseline image rejection before calibration; adjustable to >100 dBc with nulling.
Carrier Feedthrough −45 dBm unadjusted - quantifies DC offset-induced LO leakage magnitude prior to trimming.
I/Q Input Impedance 180 Ω differential - enables direct termination with standard 90 Ω per-pin DAC outputs and 100 Ω differential filters.
Supply Voltage 5 V ±5% - single-rail operation simplifies power delivery versus split-supply modulators.
Power-Down Transition <1 µs - prevents LO unlock and transient spurs during TDD slot switching or channel gating.

Pinout & Package

HVQFN24 package (SOT616-3), 4 mm × 4 mm × 0.85 mm body, thermally enhanced exposed die pad requiring RF ground connection.

Pin/Terminal Circuit Role Design Meaning
POFF_P (1) Active-HIGH logic control input Drives fast shutdown; >1.5 V disables modulator, <0.5 V enables; compatible with 3.3 V logic.
LO_P (3) / LO_N (4) Differential local oscillator input AC-coupled 50 Ω ports; require series capacitors; internal bias enables broadband 50 Ω match.
MODI_P (21) / MODI_N (22)
MODQ_P (10) / MODQ_N (9)
Differential I and Q baseband inputs 180 Ω differential impedance; support 0.25–3.3 V common-mode voltage; no external bias needed.
RFOUT (16) Single-ended RF output 50 Ω matched; AC-coupled; requires series capacitor; designed for direct connection to PA or bandpass filter.
VCC_RF(5V0) (18)
VCC_LO(5V0) (24)
Analog power supplies Separate 5 V rails for RF and LO sections reduce crosstalk; each requires local 100 nF decoupling.
RFGND (7,8,11,12,14,17,20)
LOGND (2,5,6)
Ground terminals Dedicated RF and LO ground pins minimize return-path inductance; exposed pad must be soldered to PCB ground plane.

Key Features

Feature Design Value
Wide RF bandwidth 400–4000 MHz operation covers all major cellular, ISM, and point-to-point microwave bands without redesign.
Common-mode voltage independence Stable gain and linearity across 0.25–3.3 V CM allows direct interface with 1.8 V, 2.5 V, and 3.3 V DACs without level-shifting.
Fast hardware shutdown <1 µs activation/deactivation via POFF_P eliminates need for software-controlled GPIO timing in TDD systems.
Integrated active biasing Removes external bias networks, reducing BOM count and layout sensitivity while ensuring consistent quiescent operating points.
ESD protection HBM ±2500 V and FCDM ±650 V rating protects against handling and board-level ESD events without external diodes.
Thermal resistance Rth(j-mb) = 10 K/W enables reliable operation at +85 °C ambient in compact macrocell RF modules.

Applications

Mobile Base Station Transmitter Microwave Point-to-Point Radio

Use Scenario: LTE/5G macrocell and small cell remote radio heads requiring wideband digital predistortion and high ACLR.

IC Role / Device Role / Timing Role: Primary IQ upconverter converting baseband I/Q signals to RF carrier before power amplification.

Use Value: 27 dBm IP3o and 50 dBc sideband suppression enable >45 dB ACLR in 100 MHz 5G NR channels without complex calibration.

Use Scenario: 6–42 GHz licensed microwave backhaul links using 256-QAM modulation over 112 MHz channels.

IC Role / Device Role / Timing Role: Final-stage modulator in IF-to-RF upconversion chain, accepting filtered DAC outputs.

Use Value: 400 MHz modulation bandwidth supports wide-channel high-order QAM with low EVM under temperature variation.

Broadband Test Equipment Signal Generator Industrial IoT Wireless Gateway

Use Scenario: Modular PXIe vector signal generators needing reconfigurable RF output from 400 MHz to 4 GHz.

IC Role / Device Role / Timing Role: Core modulation engine enabling frequency-agile waveform synthesis with low phase noise contribution.

Use Value: Single-device coverage eliminates band-switching hardware, reducing calibration complexity and test time overhead.

Use Scenario: Smart grid and factory automation gateways transmitting encrypted narrowband IoT traffic in sub-GHz ISM bands.

IC Role / Device Role / Timing Role: Low-power RF modulator in battery-backed or energy-harvested edge nodes.

Use Value: 6 mA shutdown current extends operational life; 5 V single supply simplifies PMIC selection versus dual-rail alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transmitter IQ modulator applications.

Alternative Part Technical Difference Application Difference Selection Advice
ADL5375-05ACPZ-R7 300–4000 MHz range; 13.5 dBm P1dB; 29 dBm IP3o; requires dual 5 V/3.3 V supplies; no integrated LO splitter. Higher linearity but needs external LO phase shifter and additional LDOs; better for lab-grade instruments than cost-sensitive infrastructure. Select when absolute IP3o >28 dBm is required and board space permits external LO conditioning.
TRF372017IRGZT 300–4000 MHz; 10 dBm P1dB; 25 dBm IP3o; integrated LO buffer only (no 90° splitter); 3.3 V supply. Lower power consumption (120 mA active) but reduced output drive; suited for portable or low-SWA designs where size trumps linearity. Select for battery-powered or SWaP-constrained applications where 10 dBm P1dB suffices and LO path is externally managed.

Compared with ADL5375-05ACPZ-R7 and TRF372017IRGZT, the BGX7100HN/1,118 uniquely combines integrated LO quadrature generation, 5 V single-supply operation, and robust 27 dBm IP3o across full 4 GHz bandwidth-making it optimal for production-grade wireless infrastructure where supply simplicity and thermal stability are critical.

Availability

BGX7100HN/1,118 is available at Aetrix Electronics and suitable for mobile network infrastructure, microwave backhaul, industrial wireless gateways, and broadband test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BGX7100HN/1,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communication markets, with deep expertise in RF front-end design and high-volume manufacturing.

The BGX7100HN/1,118 belongs to NXP's high-performance RF transmitter modulator product line, engineered specifically for carrier-class wireless infrastructure demanding wide instantaneous bandwidth, high linearity, and thermal resilience in compact form factors.

FAQ

What is the recommended LO input power level for optimal performance of the BGX7100HN/1,118?

The BGX7100HN/1,118 achieves best linearity and sideband suppression with LO input power between −3 dBm and +3 dBm, with 0 dBm specified as nominal. Exceeding +6 dBm risks damage per absolute maximum ratings, while below −9 dBm degrades conversion gain and increases noise figure. The device maintains stable operation across this range without external LO amplification in most infrastructure designs.

Does the BGX7100HN/1,118 require external DC biasing for its I/Q inputs?

No, the BGX7100HN/1,118 features integrated active biasing and operates correctly with 0.25 V to 3.3 V common-mode voltage on MODI_P/MODI_N and MODQ_P/MODQ_N pins. External bias networks are unnecessary, simplifying interface design and eliminating drift-related calibration requirements in temperature-varying environments.

How does the POFF_P pin function in the BGX7100HN/1,118, and what logic levels activate shutdown?

The POFF_P pin on the BGX7100HN/1,118 is an active-HIGH control input: applying >1.5 V places the modulator in low-current shutdown mode (6 mA), while <0.5 V enables full operation. The transition occurs in under 1 µs, and the pin tolerates up to 3.5 V input-enabling direct connection to standard 3.3 V GPIO without level shifting.

What is the thermal resistance and maximum junction temperature specification for the BGX7100HN/1,118?

The BGX7100HN/1,118 has a thermal resistance Rth(j-mb) of 10 K/W from junction to mounting base. Its absolute maximum junction temperature is +150 °C, with continuous operation rated from −40 °C to +85 °C ambient. Proper thermal vias under the exposed die pad and copper pour on the PCB are essential to maintain reliability at full RF output power.

Can the BGX7100HN/1,118 be used with single-ended DAC outputs, or is differential interface mandatory?

The BGX7100HN/1,118 requires differential I/Q inputs (MODI_P/N, MODQ_P/N) but accommodates single-ended DACs via external resistive summing networks. Application Note AN11278 details two configurations: one using 50 Ω DAC loads plus 225 Ω differential termination, and another using 90 Ω DAC loads with direct 180 Ω differential filter matching-both preserving specified linearity and noise performance.

BGX7100HN/1,118 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
24-VFQFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Function:
Modulator
LO Frequency:
400MHz ~ 4GHz
RF Frequency:
400MHz ~ 4GHz
P1dB:
12dBm
Noise Floor:
-158dBm/Hz
Output Power:
-0.2dBm
Current - Supply:
184 mA
Voltage - Supply:
4.75V ~ 5.25V
Test Frequency:
3.5GHz
Mounting Type:
Surface Mount
Supplier Device Package:
24-HVQFN (4x4)

BGX7100HN/1,118 FAQ

1.How can I place an order for BGX7100HN/1,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BGX7100HN/1,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BGX7100HN/1,118 reliable?

The price and inventory of BGX7100HN/1,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BGX7100HN/1,118 is usually 5 days.

3.What payment methods are accepted for BGX7100HN/1,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BGX7100HN/1,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BGX7100HN/1,118?

BGX7100HN/1,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BGX7100HN/1,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BGX7100HN/1,118?

For technical support, including BGX7100HN/1,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BGX7100HN/1,118 requirements.

6.How does Aetrix verify that BGX7100HN/1,118 is sourced from the original manufacturer or authorized distributors?

All BGX7100HN/1,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BGX7100HN/1,118 meets industry standards.

7.What is the process for return or replacement of BGX7100HN/1,118?

All BGX7100HN/1,118 units undergo pre-shipment inspection (PSI). If there is an issue with BGX7100HN/1,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BGX7100HN/1,118 part is unused and in its original packaging.

Return procedure for BGX7100HN/1,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BGX7100HN/1,118 Tags

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