NXP Semiconductors BGX7101HN/1118

Overview

BGX7101HN/1118 from NXP Semiconductors is a high-linearity RF transmitter IQ modulator supporting 400 MHz to 4000 MHz up-conversion with 12 dBm output at 1 dB gain compression, 27 dBm typical output IP3, and unadjusted sideband suppression of 50 dBc. It operates with differential 100 Ω IQ inputs, 50 Ω single-ended RF output, and independent hardware power-down control - deployed in mobile infrastructure base station transmitters.

For engineers reviewing the BGX7101HN/1118 datasheet, BGX7101HN/1118 pinout, BGX7101HN/1118 application, or BGX7101HN/1118 equivalent, key selection criteria include RF frequency coverage (400–4000 MHz), modulation bandwidth (up to 650 MHz), LO input return loss (>12 dB), sideband suppression stability across temperature, and fast (<1 µs) shutdown timing for TDD systems.

Technical Context

The BGX7101HN/1118 implements a dual-mixer architecture with buffered and phase-split LO path (0° and 90°), enabling precise quadrature up-conversion. Its performance remains stable across IQ common-mode voltage range (0.25 V to 3.3 V), eliminating need for external level-shifting when interfacing with DACs.

LO and RF ports feature broadband 50 Ω termination; differential IQ inputs present 100 Ω impedance with 1.8 pF differential capacitance. The device uses integrated active biasing and supports single 5 V supply, with separate VCC_LO and VCC_RF domains for improved isolation between LO and RF sections.

Key Specifications

Pinout & Package

Package: HVQFN24 (SOT616-3), 4 mm × 4 mm × 0.85 mm, thermally enhanced, exposed die pad requiring RF ground connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transmitter IQ modulator applications.

Compared with ADL5375-05ACPZ-R7 and TRF372017IRGZT, the BGX7101HN/1118 delivers superior third-order linearity (27 dBm IP3o vs. ≤25 dBm) and faster shutdown (<1 µs), making it preferred for high-density 5G NR and critical infrastructure where spectral purity and TDD agility are mandatory.

Availability

BGX7101HN/1118 is available at Aetrix Electronics and suitable for mobile network infrastructure, microwave backhaul, and industrial broadband radio applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BGX7101HN/1118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The BGX7101HN/1118 belongs to NXP's RF transmitter modulator product line, engineered specifically for high-linearity, wideband up-conversion in cellular infrastructure and mission-critical wireless systems.

FAQ

What is the RF frequency range supported by the BGX7101HN/1118?

The BGX7101HN/1118 supports an RF frequency range from 400 MHz to 4000 MHz, covering key bands for LTE, 5G NR sub-6 GHz, and microwave point-to-point links. This range is verified across all operating conditions per the official NXP datasheet Rev. 5, with consistent performance in S22_RF (>10 dB return loss) and S11_LO (>12 dB return loss).

Does the BGX7101HN/1118 require external DC blocking capacitors on its RF and LO ports?

Yes, the BGX7101HN/1118 requires series AC-coupling capacitors on both LO_P/LO_N and RFOUT pins because these ports are internally DC-biased. The datasheet specifies this in Section 12.2 and shows 0.3 pF and 0.4 pF capacitors in the typical application diagram (Figure 4), confirming mandatory AC coupling for proper biasing and signal integrity.

What is the typical power consumption of the BGX7101HN/1118 in active mode at 2.14 GHz?

At 2.14 GHz LO frequency and 25 °C mounting base temperature, the BGX7101HN/1118 draws 182 mA total supply current in active mode (Table 6). This value is measured with VCC = 5 V and Pi(lo) = 0 dBm, and remains within ±5 mA across the full −40 °C to +85 °C operating range.

How does the POFF_P pin function on the BGX7101HN/1118?

The POFF_P pin (Pin 1) is an active-HIGH logic input that places the BGX7101HN/1118 into low-current shutdown mode when driven above 1.5 V, reducing total current to 6 mA. Transition time between active and inactive states is under 1 µs, and the shutdown feature maintains LO port impedance stability to prevent synthesizer unlock in base station TDD applications.

Can the BGX7101HN/1118 interface directly with a 1.8 V CMOS DAC?

Yes, the BGX7101HN/1118 supports IQ common-mode voltages from 0.25 V to 3.3 V, fully encompassing 1.8 V CMOS DAC outputs. Its differential input impedance is 100 Ω with 1.8 pF capacitance, enabling direct connection without level-shifting circuitry - a design feature explicitly validated in Section 8.1 and Table 6 of the datasheet.