NXP Semiconductors BGY66B,112

Overview

BGY66B,112 from NXP Semiconductors is a hybrid high dynamic range reverse amplifier module for CATV two-way systems, operating from 5 MHz to 120 MHz with 25 dB typical power gain, 24 V DC supply, and 75 Ω impedance matching - deployed in upstream signal amplification paths of cable headends and node stations.

For engineers reviewing the BGY66B,112 datasheet, BGY66B,112 pinout, BGY66B,112 application, or BGY66B,112 equivalent, key selection criteria include reverse-path gain flatness (±0.2 dB), composite triple beat (−66 dB), noise figure (5 dB at 120 MHz), and rugged SOT115J flanged package with gold-plated leads for RF reliability in field-deployed infrastructure.

Technical Context

The BGY66B,112 implements a silicon-based hybrid amplifier architecture with silicon nitride passivation and gold metallization, optimized for reverse-direction (upstream) signal amplification in 75 Ω coaxial CATV networks. It delivers stable 25 dB gain across 5–120 MHz while maintaining >20 dB input/output return loss and <0.5 dB slope cable equivalent.

Designed for fixed 24 V DC operation (with 30 V transient tolerance), the module draws 115–135 mA total current and achieves −70 dB second-order distortion and −54 dB cross-modulation performance under 14-channel flat test conditions - meeting DIN45004B-compliant upstream linearity requirements.

Key Specifications

Pinout & Package

Package: SOT115J - rectangular single-ended aluminium flange package with 2 vertical and 2 horizontal 6-32 UNC mounting holes, 7 gold-plated in-line leads, and thermal base for conduction cooling in CATV node enclosures.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-path amplifier applications.

Compared with MAX2510ETL+T and QPL9057, the BGY66B,112 uniquely combines 24 V operation, SOT115J flanged mechanical design, 75 Ω impedance, and −66 dB CTB linearity - making it irreplaceable for thermally demanding, high-reliability CATV upstream infrastructure where mounting, ESD control, and spectral purity are non-negotiable.

Availability

BGY66B,112 is available at Aetrix Electronics and suitable for CATV headend amplification, HFC node reverse-path boosting, and DOCSIS upstream compliance test fixtures requiring stable component supply, long-lifecycle support, and field-proven RF reliability.

Supply support for BGY66B,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The BGY66B,112 belongs to NXP's legacy CATV amplifier product line, engineered specifically for high-linearity, high-reliability reverse-path signal conditioning in hybrid fiber-coaxial networks - emphasizing rugged packaging, thermal stability, and DIN-compliant distortion performance.

FAQ

What is the primary function of the BGY66B,112 in CATV systems?

The BGY66B,112 functions as a reverse-path (upstream) RF amplifier module in two-way CATV infrastructure. It provides 25 dB gain across 5–120 MHz to boost subscriber-generated upstream signals before transmission to the headend. Its 75 Ω input/output, −66 dB CTB, and 5 dB noise figure at 120 MHz make it suitable for DOCSIS-compliant return-path amplification in headends, nodes, and repeaters - and the BGY66B,112 is explicitly characterized for this role in NXP's Rev. 5 datasheet.

Does the BGY66B,112 support 24 V DC operation with transient tolerance?

Yes, the BGY66B,112 is specified for nominal 24 V DC operation and can withstand supply transients up to 30 V, as confirmed in Table 1 (Quick reference data) and Table 4 (Limiting values) of the NXP datasheet Rev. 5. Total DC current consumption is 115–135 mA at 24 V, and the device uses silicon nitride passivation and gold metallization to sustain long-term reliability under these conditions - a key specification of the BGY66B,112.

What package type and mounting features does the BGY66B,112 use?

The BGY66B,112 uses the SOT115J package: a rectangular single-ended aluminium flange with 2 vertical and 2 horizontal 6-32 UNC mounting holes, 7 gold-plated in-line leads, and thermal base for conduction cooling. This mechanical design enables secure attachment in outdoor cabinets and pedestals - and the BGY66B,112's flanged construction is explicitly documented in Table 3 (Ordering information) and Figure 1 (Package outline).

How does the BGY66B,112 achieve high linearity in upstream amplification?

The BGY66B,112 achieves high linearity via hybrid architecture combining discrete transistors and precision passive matching, delivering −66 dB composite triple beat (CTB) and −54 dB cross-modulation (Xmod) under 14-channel flat test conditions. Its >20 dB input/output return loss and ±0.2 dB frequency response flatness minimize distortion generation - all verified in Table 5 (Characteristics) of the BGY66B,112 datasheet Rev. 5.

Is ESD protection built into the BGY66B,112, and how should it be handled?

The BGY66B,112 is explicitly labeled ESD-sensitive in the NXP datasheet Rev. 5 caution notice, requiring grounded handling during transport and assembly. While it lacks on-chip ESD clamps, its silicon nitride passivation and gold metallization enhance robustness - but system-level ESD protection must be implemented externally. Proper handling preserves the BGY66B,112's RF performance, especially at the sensitive RF input (Pin 1) and output (Pin 9).