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NXP Semiconductors BLA1011S-200,112

Part No.:
BLA1011S-200,112
Manufacturer:
NXP Semiconductors
Category:
Single FETs, MOSFETs
Package:
SOT-502B
Datasheet:
AetrixBLA1011S-200,112.pdf
Description:
RF MOSFET LDMOS 36V SOT502B
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:48

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Product details

Overview

BLA1011S-200 from NXP Semiconductors (formerly Philips Semiconductors) is a 200 W LDMOS RF power transistor designed for avionics transmitter applications in the 1030–1090 MHz band, operating at 36 V drain-source voltage with 150 mA quiescent drain current, delivering ≥200 W output power, ≥13 dB power gain, and ≥45 % drain efficiency in pulsed class-AB mode.

For engineers reviewing the BLA1011S-200 datasheet, BLA1011S-200 pinout, BLA1011S-200 application, or BLA1011S-200 equivalent, this page provides verified RF performance data, thermal impedance (0.15 K/W), ruggedness under 5:1 VSWR mismatch, gate-source threshold voltage (4–5 V), and drain-source breakdown voltage (75 V) - all critical for airborne transponder and SSR transmitter design.

Technical Context

The BLA1011S-200 operates as a common-source pulsed class-AB RF amplifier with fixed 36 V drain bias and 150 mA IDq, optimized for narrowband operation between 1030 MHz and 1090 MHz. Its LDMOS structure enables high power gain (13–15 dB), fast switching (rise/fall ≤50 ns), and robust load mismatch tolerance up to VSWR = 5:1 across all phases.

Thermal management relies on direct source-to-heatsink mounting via the flanged ceramic package (SOT502B), eliminating DC isolators and reducing common-mode inductance. Junction-to-heatsink thermal impedance is 0.15 K/W under RF operating conditions (tp = 50 µs, δ = 10 %), supporting stable 200 W pulsed output without exceeding 200 °C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
RF Frequency Range1030–1090 MHz - precisely matches Mode S and TCAS transponder interrogation bands
Output Power (PL)200 W typical - meets minimum peak power requirement for airborne SSR transmitters
Power Gain (Gp)13–15 dB - enables low-driver-stage complexity and reduced pre-driver power consumption
Drain Efficiency (ηD)45–50 % - minimizes heatsink size and cooling requirements in space-constrained avionics enclosures
Rise/Fall Time≤50 ns - supports clean pulse shaping for pulse-position-modulated transponder replies
VDS Max75 V - provides 2.1× safety margin over 36 V operating voltage for transient suppression
Zth(j-h)0.15 K/W - allows sustained 200 W pulsed operation with heatsink temperature ≤75 °C

Pinout & Package

BLA1011S-200 uses the earless flanged LDMOST ceramic package SOT502B, with drain and gate leads on one side and source connected directly to the mounting flange for low-inductance grounding and simplified thermal path.

Pin/TerminalCircuit RoleDesign Meaning
1DrainHigh-current RF output node; requires low-inductance RF choke and matching network connection
2GateRF input control terminal; biased at VGS(th) + 9 V for full conduction; sensitive to ESD
3SourceInternally bonded to mounting flange; serves as RF/DC ground reference and primary thermal path to heatsink

Key Features

FeatureDesign Value
Source-on-flange constructionEliminates need for DC blocking capacitors and reduces common-mode inductance in RF output path
5:1 VSWR ruggednessWithstands full-rated load power under worst-case antenna mismatch without device failure
High power gain (13–15 dB)Reduces required driver stage output power and simplifies multi-stage amplifier design
Low thermal impedance (0.15 K/W)Enables compact heatsink integration in sealed avionics enclosures with limited airflow
ESD-sensitive gate (±22 V max)Requires handling per IEC 61340-5-1; gate protection diodes not integrated

Applications

Mode S Transponder TransmitterTCAS I/II Interrogator

Use Scenario: High-reliability airborne transponder transmitting 1090 MHz reply pulses with strict rise/fall time and spectral mask compliance.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 200 W peak output in pulsed class-AB mode with precise timing control.

Use Value: Meets DO-160 Section 22 radiated emissions limits and ensures >200 nm detection range due to guaranteed 200 W output and 13 dB gain.

Use Scenario: Airborne collision avoidance system interrogating other aircraft at 1030 MHz with high-duty-cycle pulses.

IC Role / Device Role / Timing Role: High-efficiency RF PA enabling continuous interrogation bursts while maintaining thermal stability in cockpit-mounted units.

Use Value: 45–50 % drain efficiency reduces heat dissipation by >30 % vs. lower-efficiency alternatives, extending MTBF in convection-cooled enclosures.

SSR Ground Station TransmitterAvionics Test Equipment PA

Use Scenario: Secondary Surveillance Radar ground station requiring stable 200 W output across 1030–1090 MHz for long-range target illumination.

IC Role / Device Role / Timing Role: Linearized RF power stage operating in pulsed class-AB with tight gain flatness (±0.5 dB) over band.

Use Value: 0.15 K/W thermal impedance supports 100 % duty cycle testing at reduced pulse width, enabling accelerated life validation.

Use Scenario: Benchtop avionics signal generator or transponder tester needing repeatable, rugged RF output amplification.

IC Role / Device Role / Timing Role: Lab-grade RF PA module with proven 5:1 VSWR tolerance for unmatched load testing and fault injection.

Use Value: Eliminates need for external circulators or isolators during production test, cutting BOM cost and calibration complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BLA1011-200Flanged package with two mounting holes (SOT502A); identical electrical specs and thermal impedanceRequires mechanical mounting hardware; preferred for high-vibration airframe installationsSelect BLA1011-200 when board-level mechanical stability under MIL-STD-810H vibration is prioritized over footprint density
MRF101ANLower Ptot (500 W vs. 700 W), higher VGS(th) (3–4 V), same frequency band and 200 W output capabilityDesigned for commercial radar; lacks documented 5:1 VSWR ruggedness at full powerChoose MRF101AN only if avionics qualification testing confirms equivalent mismatch tolerance under flight-critical conditions

Compared with BLA1011S-200, BLA1011-200 offers identical RF performance but adds mechanical mounting flexibility, while MRF101AN trades ruggedness assurance for broader commercial support - making BLA1011S-200 the optimal choice for certified avionics where VSWR resilience is non-negotiable.

Availability

BLA1011S-200 is available at Aetrix Electronics and suitable for Mode S transponders, TCAS interrogators, SSR ground stations, and avionics test equipment requiring stable component supply across extended production lifecycles.

Supply support for BLA1011S-200 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power devices from its Philips Semiconductors roots.

The BLA1011S-200 belongs to NXP's avionics-qualified LDMOS transistor family, engineered specifically for high-reliability airborne transponder and surveillance radar transmitters operating in the 1030–1090 MHz band.

FAQ

What is the maximum drain-source voltage rating for BLA1011S-200?

The BLA1011S-200 has an absolute maximum drain-source voltage (VDS) rating of 75 V, providing a 2.1× safety margin above its standard 36 V operating supply. This rating is defined per IEC 60134 Absolute Maximum Rating System and must not be exceeded to prevent permanent device damage. Operation at 36 V with proper transient suppression ensures long-term reliability in avionics power amplifier stages.

Does BLA1011S-200 require external DC blocking on the source terminal?

No, BLA1011S-200 does not require external DC blocking on the source terminal because the source is internally connected to the mounting flange, which serves as the DC and RF ground reference. This eliminates the need for series capacitors in the source path, reducing common-mode inductance and simplifying PCB layout - a key advantage confirmed in the device's pinning information and application notes.

What is the thermal impedance of BLA1011S-200 from junction to heatsink?

The BLA1011S-200 has a typical thermal impedance (Zth(j-h)) of 0.15 K/W under RF operating conditions (pulse width = 50 µs, duty cycle = 10 %). This value is measured with the device mounted directly to a heatsink and is critical for calculating maximum allowable heatsink temperature to maintain junction temperature below 200 °C during 200 W pulsed operation.

Is BLA1011S-200 qualified for avionics use under DO-160 or similar standards?

The BLA1011S-200 is designed and characterized for avionics transmitter applications per its product profile and application information, including 5:1 VSWR ruggedness verification at full rated power. While the datasheet does not list formal DO-160 certification, its electrical and thermal specifications meet the baseline requirements for Mode S and TCAS systems. End-equipment qualification remains the responsibility of the system integrator per applicable airworthiness regulations.

What gate-source voltage range is safe for BLA1011S-200 operation?

The BLA1011S-200 has a gate-source voltage (VGS) limiting value of ±22 V, with a typical threshold voltage (VGS(th)) of 4–5 V. For reliable class-AB operation at 150 mA IDq, gate bias is typically set to VGS(th) + 9 V (≈13–14 V). Exceeding ±22 V risks permanent gate oxide damage, and ESD precautions per IEC 61340-5-1 are mandatory during handling and assembly.

BLA1011S-200,112 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SOT-502B
Packaging:
Bulk
Product Status:
Obsolete
Technology:
LDMOS
Configuration:
-
Frequency:
1.03GHz ~ 1.09GHz
Gain:
13dB
Voltage - Test:
36 V
Current Rating (Amps):
-
Noise Figure:
-
Current - Test:
150 mA
Power - Output:
200W
Voltage - Rated:
75 V
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
SOT502B

BLA1011S-200,112 FAQ

1.How can I place an order for BLA1011S-200,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLA1011S-200,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLA1011S-200,112 reliable?

The price and inventory of BLA1011S-200,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLA1011S-200,112 is usually 5 days.

3.What payment methods are accepted for BLA1011S-200,112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLA1011S-200,112 transactions.

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4.How is shipping managed for BLA1011S-200,112?

BLA1011S-200,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLA1011S-200,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLA1011S-200,112?

For technical support, including BLA1011S-200,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLA1011S-200,112 requirements.

6.How does Aetrix verify that BLA1011S-200,112 is sourced from the original manufacturer or authorized distributors?

All BLA1011S-200,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLA1011S-200,112 meets industry standards.

7.What is the process for return or replacement of BLA1011S-200,112?

All BLA1011S-200,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLA1011S-200,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLA1011S-200,112 part is unused and in its original packaging.

Return procedure for BLA1011S-200,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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