NXP Semiconductors BLA1011S-200,112
- Part No.:
- BLA1011S-200,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-502B
- Datasheet:
-
BLA1011S-200,112.pdf
- Description:
- RF MOSFET LDMOS 36V SOT502B
- Quantity:
- Payment:

- Shipping:

Inventory:48
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BLA1011S-200 from NXP Semiconductors (formerly Philips Semiconductors) is a 200 W LDMOS RF power transistor designed for avionics transmitter applications in the 1030–1090 MHz band, operating at 36 V drain-source voltage with 150 mA quiescent drain current, delivering ≥200 W output power, ≥13 dB power gain, and ≥45 % drain efficiency in pulsed class-AB mode.
For engineers reviewing the BLA1011S-200 datasheet, BLA1011S-200 pinout, BLA1011S-200 application, or BLA1011S-200 equivalent, this page provides verified RF performance data, thermal impedance (0.15 K/W), ruggedness under 5:1 VSWR mismatch, gate-source threshold voltage (4–5 V), and drain-source breakdown voltage (75 V) - all critical for airborne transponder and SSR transmitter design.
Technical Context
The BLA1011S-200 operates as a common-source pulsed class-AB RF amplifier with fixed 36 V drain bias and 150 mA IDq, optimized for narrowband operation between 1030 MHz and 1090 MHz. Its LDMOS structure enables high power gain (13–15 dB), fast switching (rise/fall ≤50 ns), and robust load mismatch tolerance up to VSWR = 5:1 across all phases.
Thermal management relies on direct source-to-heatsink mounting via the flanged ceramic package (SOT502B), eliminating DC isolators and reducing common-mode inductance. Junction-to-heatsink thermal impedance is 0.15 K/W under RF operating conditions (tp = 50 µs, δ = 10 %), supporting stable 200 W pulsed output without exceeding 200 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | 1030–1090 MHz - precisely matches Mode S and TCAS transponder interrogation bands |
| Output Power (PL) | 200 W typical - meets minimum peak power requirement for airborne SSR transmitters |
| Power Gain (Gp) | 13–15 dB - enables low-driver-stage complexity and reduced pre-driver power consumption |
| Drain Efficiency (ηD) | 45–50 % - minimizes heatsink size and cooling requirements in space-constrained avionics enclosures |
| Rise/Fall Time | ≤50 ns - supports clean pulse shaping for pulse-position-modulated transponder replies |
| VDS Max | 75 V - provides 2.1× safety margin over 36 V operating voltage for transient suppression |
| Zth(j-h) | 0.15 K/W - allows sustained 200 W pulsed operation with heatsink temperature ≤75 °C |
Pinout & Package
BLA1011S-200 uses the earless flanged LDMOST ceramic package SOT502B, with drain and gate leads on one side and source connected directly to the mounting flange for low-inductance grounding and simplified thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | High-current RF output node; requires low-inductance RF choke and matching network connection |
| 2 | Gate | RF input control terminal; biased at VGS(th) + 9 V for full conduction; sensitive to ESD |
| 3 | Source | Internally bonded to mounting flange; serves as RF/DC ground reference and primary thermal path to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Source-on-flange construction | Eliminates need for DC blocking capacitors and reduces common-mode inductance in RF output path |
| 5:1 VSWR ruggedness | Withstands full-rated load power under worst-case antenna mismatch without device failure |
| High power gain (13–15 dB) | Reduces required driver stage output power and simplifies multi-stage amplifier design |
| Low thermal impedance (0.15 K/W) | Enables compact heatsink integration in sealed avionics enclosures with limited airflow |
| ESD-sensitive gate (±22 V max) | Requires handling per IEC 61340-5-1; gate protection diodes not integrated |
Applications
| Mode S Transponder Transmitter | TCAS I/II Interrogator |
|---|---|
Use Scenario: High-reliability airborne transponder transmitting 1090 MHz reply pulses with strict rise/fall time and spectral mask compliance. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 200 W peak output in pulsed class-AB mode with precise timing control. Use Value: Meets DO-160 Section 22 radiated emissions limits and ensures >200 nm detection range due to guaranteed 200 W output and 13 dB gain. | Use Scenario: Airborne collision avoidance system interrogating other aircraft at 1030 MHz with high-duty-cycle pulses. IC Role / Device Role / Timing Role: High-efficiency RF PA enabling continuous interrogation bursts while maintaining thermal stability in cockpit-mounted units. Use Value: 45–50 % drain efficiency reduces heat dissipation by >30 % vs. lower-efficiency alternatives, extending MTBF in convection-cooled enclosures. |
| SSR Ground Station Transmitter | Avionics Test Equipment PA |
Use Scenario: Secondary Surveillance Radar ground station requiring stable 200 W output across 1030–1090 MHz for long-range target illumination. IC Role / Device Role / Timing Role: Linearized RF power stage operating in pulsed class-AB with tight gain flatness (±0.5 dB) over band. Use Value: 0.15 K/W thermal impedance supports 100 % duty cycle testing at reduced pulse width, enabling accelerated life validation. | Use Scenario: Benchtop avionics signal generator or transponder tester needing repeatable, rugged RF output amplification. IC Role / Device Role / Timing Role: Lab-grade RF PA module with proven 5:1 VSWR tolerance for unmatched load testing and fault injection. Use Value: Eliminates need for external circulators or isolators during production test, cutting BOM cost and calibration complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLA1011-200 | Flanged package with two mounting holes (SOT502A); identical electrical specs and thermal impedance | Requires mechanical mounting hardware; preferred for high-vibration airframe installations | Select BLA1011-200 when board-level mechanical stability under MIL-STD-810H vibration is prioritized over footprint density |
| MRF101AN | Lower Ptot (500 W vs. 700 W), higher VGS(th) (3–4 V), same frequency band and 200 W output capability | Designed for commercial radar; lacks documented 5:1 VSWR ruggedness at full power | Choose MRF101AN only if avionics qualification testing confirms equivalent mismatch tolerance under flight-critical conditions |
Compared with BLA1011S-200, BLA1011-200 offers identical RF performance but adds mechanical mounting flexibility, while MRF101AN trades ruggedness assurance for broader commercial support - making BLA1011S-200 the optimal choice for certified avionics where VSWR resilience is non-negotiable.
Availability
BLA1011S-200 is available at Aetrix Electronics and suitable for Mode S transponders, TCAS interrogators, SSR ground stations, and avionics test equipment requiring stable component supply across extended production lifecycles.
Supply support for BLA1011S-200 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power devices from its Philips Semiconductors roots.
The BLA1011S-200 belongs to NXP's avionics-qualified LDMOS transistor family, engineered specifically for high-reliability airborne transponder and surveillance radar transmitters operating in the 1030–1090 MHz band.
FAQ
What is the maximum drain-source voltage rating for BLA1011S-200?
The BLA1011S-200 has an absolute maximum drain-source voltage (VDS) rating of 75 V, providing a 2.1× safety margin above its standard 36 V operating supply. This rating is defined per IEC 60134 Absolute Maximum Rating System and must not be exceeded to prevent permanent device damage. Operation at 36 V with proper transient suppression ensures long-term reliability in avionics power amplifier stages.
Does BLA1011S-200 require external DC blocking on the source terminal?
No, BLA1011S-200 does not require external DC blocking on the source terminal because the source is internally connected to the mounting flange, which serves as the DC and RF ground reference. This eliminates the need for series capacitors in the source path, reducing common-mode inductance and simplifying PCB layout - a key advantage confirmed in the device's pinning information and application notes.
What is the thermal impedance of BLA1011S-200 from junction to heatsink?
The BLA1011S-200 has a typical thermal impedance (Zth(j-h)) of 0.15 K/W under RF operating conditions (pulse width = 50 µs, duty cycle = 10 %). This value is measured with the device mounted directly to a heatsink and is critical for calculating maximum allowable heatsink temperature to maintain junction temperature below 200 °C during 200 W pulsed operation.
Is BLA1011S-200 qualified for avionics use under DO-160 or similar standards?
The BLA1011S-200 is designed and characterized for avionics transmitter applications per its product profile and application information, including 5:1 VSWR ruggedness verification at full rated power. While the datasheet does not list formal DO-160 certification, its electrical and thermal specifications meet the baseline requirements for Mode S and TCAS systems. End-equipment qualification remains the responsibility of the system integrator per applicable airworthiness regulations.
What gate-source voltage range is safe for BLA1011S-200 operation?
The BLA1011S-200 has a gate-source voltage (VGS) limiting value of ±22 V, with a typical threshold voltage (VGS(th)) of 4–5 V. For reliable class-AB operation at 150 mA IDq, gate bias is typically set to VGS(th) + 9 V (≈13–14 V). Exceeding ±22 V risks permanent gate oxide damage, and ESD precautions per IEC 61340-5-1 are mandatory during handling and assembly.
BLA1011S-200,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-502B
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.03GHz ~ 1.09GHz
- Gain:
- 13dB
- Voltage - Test:
- 36 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 150 mA
- Power - Output:
- 200W
- Voltage - Rated:
- 75 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- SOT502B
BLA1011S-200,112 FAQ
1.How can I place an order for BLA1011S-200,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLA1011S-200,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLA1011S-200,112 reliable?
The price and inventory of BLA1011S-200,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLA1011S-200,112 is usually 5 days.
3.What payment methods are accepted for BLA1011S-200,112?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLA1011S-200,112 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BLA1011S-200,112?
BLA1011S-200,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BLA1011S-200,112 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLA1011S-200,112?
For technical support, including BLA1011S-200,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLA1011S-200,112 requirements.
6.How does Aetrix verify that BLA1011S-200,112 is sourced from the original manufacturer or authorized distributors?
All BLA1011S-200,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLA1011S-200,112 meets industry standards.
7.What is the process for return or replacement of BLA1011S-200,112?
All BLA1011S-200,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLA1011S-200,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLA1011S-200,112 part is unused and in its original packaging.
Return procedure for BLA1011S-200,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BLA1011S-200,112 Tags

-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits

-
TAV2-501+
Mini-Circuits

-
CE3514M4-C2
CEL

-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits

-
CE3512K2-C1
CEL

-
AFM907NT1
NXP Semiconductors

-
SKY65050-372LF
Skyworks Solutions Inc.

-
CE3520K3-C1
CEL

-
AFT09MS007NT1
NXP USA Inc.

-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

