NXP Semiconductors BLA1011S-200R,112

Overview

BLA1011S-200R from NXP Semiconductors is a 200 W LDMOS RF power transistor designed for avionics transmitter applications in the 1030–1090 MHz band, operating at 36 V supply with 150 mA quiescent drain current, delivering ≥200 W output power, ≥13 dB gain, and ≥45 % drain efficiency in pulsed class-AB mode.

For engineers reviewing the BLA1011S-200R datasheet, BLA1011S-200R pinout, BLA1011S-200R application, or BLA1011S-200R equivalent, key selection considerations include ruggedness under 5:1 VSWR mismatch, transient thermal impedance of 0.15 K/W, gate-source threshold voltage (4–5 V), and earless flanged SOT502B ceramic packaging optimized for high-power RF heatsinking.

Technical Context

This LDMOST device operates in common-source pulsed class-AB configuration with fixed 36 V drain-source bias and 150 mA IDq, supporting pulse widths from 50 μs to 340 μs at 2 % duty cycle. Its RF performance is characterized across 1030–1090 MHz with typical load power up to 250 W, gain of 14–15 dB, and drain efficiency of 50 % under test conditions.

The transistor features source-connected mounting flange to eliminate DC isolators and reduce common-mode inductance, while its ruggedness is validated for 5:1 VSWR load mismatch at full rated power across the entire 1030–1090 MHz band - critical for airborne transponder and ADS-B transmitter reliability.

Key Specifications

Pinout & Package

BLA1011S-200R uses the earless flanged LDMOST ceramic package SOT502B, featuring a thermally optimized metal flange for direct heatsink mounting and two leads. The source terminal is internally connected to the mounting flange, eliminating need for DC isolation and reducing parasitic inductance in high-frequency RF paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDMOS RF power transistor applications.

Compared with BLA1011-200R, the BLA1011S-200R offers identical RF performance in an earless flange variant for simplified mechanical integration, while the MRF101AN provides lower-cost alternative with reduced power, voltage, and ruggedness margins - making BLA1011S-200R the preferred choice for certified transponder and ADS-B final-stage amplification.

Availability

BLA1011S-200R is available at Aetrix Electronics and suitable for avionics transponder systems, ADS-B Out transmitters, TCAS interrogators, and SSR ground station amplifiers requiring stable component supply, traceable sourcing, and long-term lifecycle support.

Supply support for BLA1011S-200R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company specializing in high-performance RF, automotive, and secure connectivity solutions, with deep expertise in aerospace-grade power devices.

The BLA1011S-200R belongs to NXP's avionics LDMOS transistor product line, engineered specifically for certified airborne transmitter applications demanding high power, ruggedness, and regulatory compliance in the 1030–1090 MHz band.

FAQ

What is the maximum continuous drain current rating for BLA1011S-200R?

The BLA1011S-200R does not specify a maximum continuous drain current (ID) rating because it is designed exclusively for pulsed class-AB operation. Its limiting values define pulsed power dissipation (700 W at Th ≤25 °C, tp = 50 μs, δ = 2 %) and junction temperature limit (200 °C), with quiescent drain current IDq fixed at 150 mA for RF characterization.

Is BLA1011S-200R qualified for use in DO-160-certified avionics equipment?

While the BLA1011S-200R itself is not formally DO-160 qualified - as qualification applies to full assemblies, not individual components - it is explicitly designed for avionics transmitter applications and meets critical requirements including 5:1 VSWR ruggedness, RoHS compliance, and thermal performance validated per IEC 60134 limiting values, making it suitable for inclusion in DO-160-compliant systems when properly integrated.

How does the earless flange (SOT502B) of BLA1011S-200R differ from the flanged version (SOT502A)?

The BLA1011S-200R uses the SOT502B package - an earless flanged LDMOST ceramic package with two leads - whereas BLA1011-200R uses SOT502A, which includes two mounting holes. Both share identical electrical characteristics and thermal impedance (0.15 K/W), but SOT502B eliminates mounting ears for simplified mechanical integration in space-constrained avionics modules.

Can BLA1011S-200R operate at frequencies outside the 1030–1090 MHz band?

The BLA1011S-200R is characterized and specified only for 1030–1090 MHz operation. While it may exhibit RF gain outside this band, NXP does not guarantee performance, ruggedness, or efficiency beyond this range. Designers must verify stability, matching, and thermal behavior independently if considering out-of-band use.

What is the recommended gate drive voltage range for BLA1011S-200R in pulsed class-AB operation?

For pulsed class-AB operation, the BLA1011S-200R requires a gate-source voltage (VGS) that establishes 150 mA quiescent drain current (IDq). Based on its gate threshold voltage range (4–5 V) and forward transconductance (9 S typical), a nominal VGS of 6–7 V is recommended to ensure stable biasing while staying within the ±22 V absolute maximum rating.