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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLC6G27LS-100,118

Name: BLC6G27LS-100,118
Brand: NXP Semiconductors
SKU: BLC6G27LS-100,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLC6G27LS-100,118

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: -

Datasheet:: BLC6G27LS-100,118.pdf

Description:: RF MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BLC6G27LS-100,118 from Ampleon is a 140 W asymmetrical Doherty LDMOS power transistor designed for LTE base station RF power amplifiers operating from 2496 MHz to 2690 MHz. It delivers 28 W average output power with 14.5 dB gain and 43 % drain efficiency under 1-carrier W-CDMA conditions (PAR = 7.2 dB), and supports 119–178 W pulsed CW output at 3 dB compression.

For engineers reviewing the BLC6G27LS-100,118 datasheet, BLC6G27LS-100,118 pinout, BLC6G27LS-100,118 application, or BLC6G27LS-100,118 equivalent, this device is selected for high-efficiency, rugged Doherty PA designs requiring low memory effects, integrated ESD protection, and validated VSWR = 10:1 load mismatch tolerance in production-grade 2600 MHz macro base stations.

Technical Context

The BLC6G27LS-100,118 integrates two independently biased LDMOS devices - main and peak - in a single air-cavity plastic flanged package (SOT1275-1), enabling asymmetrical Doherty operation with decoupled video paths (pins 5 and 6) and separate gate/drain terminals for precise impedance tuning. Its internal matching simplifies PCB layout while maintaining broadband performance across the 2496–2690 MHz band.

Thermal design is enabled by ultra-low junction-to-case thermal resistance (0.221 K/W at 80 W), and ruggedness is confirmed under worst-case VSWR = 10:1 at 2496 MHz with 120 W CW. The device operates at V_DS = 28 V, with main-device I_Dq = 320 mA and peak-device I_Dq = 660 mA, supporting high linearity via low output capacitance and optimized load-pull impedances.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	2496–2690 MHz - fully characterized and optimized for LTE Band 7/38/41 macro base station applications
Output Power (Pulsed CW)	119–178 W at 3 dB gain compression - enables high peak-power capability in burst-mode transmission
Drain Efficiency (η_D)	43 % typical at 28 W avg (W-CDMA) - reduces thermal load and DC power consumption in multi-carrier systems
Power Gain (G_p)	14.5 dB typical at 28 W avg - provides sufficient gain margin for driver-stage simplification
ACPR (5 MHz offset)	−33 dBc typical at 28 W avg - meets stringent LTE ACLR requirements without excessive digital predistortion overhead
Thermal Resistance R_th(j-case)	0.221 K/W at 80 W - allows compact heatsink integration and stable operation at T_case = 80 °C
VSWR Tolerance	10:1 load mismatch survivability - ensures field reliability under antenna detuning or cable fault conditions

Pinout & Package

Air cavity plastic earless flanged package (SOT1275-1), 6-lead, thermally enhanced for RF power dissipation; flange electrically connected to source (pin 7).

Pin/Terminal	Circuit Role	Design Meaning
1	drain1 (main)	Main amplifier drain connection; carries high-current RF output path with low-inductance routing requirement
2	drain2 (peak)	Peak amplifier drain connection; enables independent bias and harmonic termination for Doherty efficiency enhancement
3	gate1 (main)	Main amplifier gate input; requires stable −0.5 to +13 V control with <140 nA leakage for quiescent stability
4	gate2 (peak)	Peak amplifier gate input; biased separately to activate only during signal peaks, reducing average current draw
5	video decoupling (main)	Main device video bandwidth stabilization node; connects to local 1 μF/10 μF decoupling for improved transient response
6	video decoupling (peak)	Peak device video bandwidth stabilization node; isolates peak-stage transients from main-stage bias network
7	source	Common source terminal and thermal/electrical reference; tied to flange for low-impedance ground and heat conduction

Key Features

Feature	Design Value
Internally matched	Eliminates external input/output matching networks for 2496–2690 MHz, reducing bill-of-materials and layout complexity
Low memory effects	Enables high-fidelity digital predistortion (DPD) convergence with minimal post-correction residual error
Integrated ESD protection	HBM Class 2 (2 kV) and CDM Class C2A (500 V) - protects against handling damage without external TVS diodes
Asymmetrical Doherty architecture	Optimized main/peak device sizing (320 mA / 660 mA I_Dq) delivers >15 % efficiency improvement over Class AB at 6–8 dB back-off
Low output capacitance	Reduces reactive loading on output combiner, improving bandwidth and harmonic suppression in Doherty configurations

Applications

Macro Base Station PA	Multi-Carrier LTE Transmitter
Use Scenario: High-power RF final stage in outdoor macro cell sites covering urban/suburban areas with 2×20 MHz LTE carriers in Band 7. IC Role / Device Role / Timing Role: Asymmetrical Doherty power transistor delivering 28 W avg per carrier with ACPR < −33 dBc at 5 MHz offset. Use Value: Enables 43 % drain efficiency at rated output, reducing cooling requirements and total system power draw by >18 % vs. legacy Class AB solutions.	Use Scenario: Dual-band LTE transmitter combining Band 7 (2500–2690 MHz) and Band 38 (2570–2620 MHz) signals into single PA chain. IC Role / Device Role / Timing Role: Broadband Doherty PA core with 110 MHz video bandwidth supporting dynamic envelope tracking and multi-tone modulation. Use Value: Maintains linear operation across 194 MHz instantaneous bandwidth with <0.5 dB gain ripple, eliminating need for band-switching PA modules.
High-Ruggedness Remote Radio Head	5G NR mMIMO Pre-5G Upgrade PA
Use Scenario: Outdoor RRH unit deployed on tower-mounted cabinets with limited airflow and variable ambient temperature (−40 °C to +65 °C). IC Role / Device Role / Timing Role: Final-stage power transistor surviving VSWR = 10:1 mismatches at full power without latch-up or parametric shift. Use Value: Eliminates need for external circulators or VSWR-sensing protection circuitry, lowering BOM cost and failure points by 30 %.	Use Scenario: Retrofit PA module in existing 4G base stations to support early 5G NR 2600 MHz deployments using 100 MHz channel bandwidth. IC Role / Device Role / Timing Role: High-linearity Doherty transistor delivering >14 dB gain and <−45 dBc ACPR at 10 MHz offset under 100 MHz modulated signal. Use Value: Achieves 5G NR spectral mask compliance without redesigning RF front-end, accelerating time-to-market for hybrid 4G/5G infrastructure.

Macro Base Station PA

Multi-Carrier LTE Transmitter

Use Scenario: High-power RF final stage in outdoor macro cell sites covering urban/suburban areas with 2×20 MHz LTE carriers in Band 7.

IC Role / Device Role / Timing Role: Asymmetrical Doherty power transistor delivering 28 W avg per carrier with ACPR < −33 dBc at 5 MHz offset.

Use Value: Enables 43 % drain efficiency at rated output, reducing cooling requirements and total system power draw by >18 % vs. legacy Class AB solutions.

Use Scenario: Dual-band LTE transmitter combining Band 7 (2500–2690 MHz) and Band 38 (2570–2620 MHz) signals into single PA chain.

IC Role / Device Role / Timing Role: Broadband Doherty PA core with 110 MHz video bandwidth supporting dynamic envelope tracking and multi-tone modulation.

Use Value: Maintains linear operation across 194 MHz instantaneous bandwidth with <0.5 dB gain ripple, eliminating need for band-switching PA modules.

High-Ruggedness Remote Radio Head

5G NR mMIMO Pre-5G Upgrade PA

Use Scenario: Outdoor RRH unit deployed on tower-mounted cabinets with limited airflow and variable ambient temperature (−40 °C to +65 °C).

IC Role / Device Role / Timing Role: Final-stage power transistor surviving VSWR = 10:1 mismatches at full power without latch-up or parametric shift.

Use Value: Eliminates need for external circulators or VSWR-sensing protection circuitry, lowering BOM cost and failure points by 30 %.

Use Scenario: Retrofit PA module in existing 4G base stations to support early 5G NR 2600 MHz deployments using 100 MHz channel bandwidth.

IC Role / Device Role / Timing Role: High-linearity Doherty transistor delivering >14 dB gain and <−45 dBc ACPR at 10 MHz offset under 100 MHz modulated signal.

Use Value: Achieves 5G NR spectral mask compliance without redesigning RF front-end, accelerating time-to-market for hybrid 4G/5G infrastructure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AFM30L025N	25 W GaN HEMT; higher gain (18 dB), wider bandwidth (1800–3800 MHz), but lower ruggedness (VSWR = 6.5:1 max)	Suitable for small-cell and active antenna systems where size/efficiency outweigh VSWR tolerance needs	Select when prioritizing bandwidth and power density over field-deployment robustness
BLC8G27LS-140AV	Same die family, identical pinout and package (SOT1275-1), but rated for 140 W P3dB and higher I_Dq (450/600 mA); 0.2 dB higher G_p at 28 W	Direct upgrade path for higher-output macro sites requiring >30 W avg per carrier	Choose for new designs targeting >30 W avg output or extended thermal headroom

Compared with AFM30L025N, BLC6G27LS-100,118 offers superior VSWR survivability and thermal stability for macro base stations, while BLC8G27LS-140AV provides higher output headroom within identical mechanical and layout constraints - making both alternatives application-specific rather than drop-in replacements.

Availability

BLC6G27LS-100,118 is available at Aetrix Electronics and suitable for LTE macro base stations, remote radio heads, and multi-carrier transmitter systems requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BLC6G27LS-100,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Ampleon Netherlands B.V. is a global leader in RF power transistors, spun off from NXP in 2015, specializing in LDMOS and GaN solutions for wireless infrastructure, broadcast, and industrial heating.

The BLC6G27LS-100,118 belongs to Ampleon's BLCxG27LS series of asymmetrical Doherty LDMOS transistors, engineered specifically for energy-efficient, high-reliability LTE-Advanced and pre-5G base station power amplifiers in the 2.5–2.7 GHz band.

FAQ

What is the maximum continuous drain-source voltage rating for BLC6G27LS-100,118?

The BLC6G27LS-100,118 has an absolute maximum drain-source voltage (V_DS) rating of 65 V, as specified in IEC 60134 limiting values. Operation above this voltage risks permanent device failure. The recommended operating condition is V_DS = 28 V, which balances efficiency, linearity, and reliability for LTE base station applications.

Does BLC6G27LS-100,118 require external matching networks?

No, the BLC6G27LS-100,118 is internally matched for operation across 2496–2690 MHz, eliminating the need for external input/output matching components in standard Doherty demo board layouts. However, fine-tuning may be applied at system level for specific load-pull optimization or harmonic suppression.

What is the thermal resistance from junction to case for BLC6G27LS-100,118 at 80 W output?

At 80 W output power, the BLC6G27LS-100,118 exhibits a typical junction-to-case thermal resistance (R_th(j-case)) of 0.221 K/W. This value is measured under defined conditions: T_case = 80 °C, V_DS = 28 V, I_Dq = 320 mA (main), and V_GS(amp)peak = 0.6 V - enabling accurate heatsink sizing for macro base station thermal management.

Is BLC6G27LS-100,118 RoHS compliant?

Yes, the BLC6G27LS-100,118 is compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC. This compliance is explicitly stated in the product data sheet section 1.2 and verified through Ampleon's material declaration and manufacturing controls.

What is the video bandwidth (VBW) performance of BLC6G27LS-100,118 in Doherty operation?

The BLC6G27LS-100,118 delivers a typical video bandwidth of 110 MHz in Doherty demo board configuration at 2600 MHz, V_DS = 28 V, I_Dq = 320 mA, and V_GS(amp)peak = 0.6 V. This wide VBW supports fast-envelope modulation schemes including envelope tracking and digital predistortion with minimal distortion.

BLC6G27LS-100,118 Specifications

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Manufacturer:: NXP Semiconductors

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Product Status:: Active

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BLC6G27LS-100,118 FAQ

1.How can I place an order for BLC6G27LS-100,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLC6G27LS-100,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLC6G27LS-100,118 reliable?

The price and inventory of BLC6G27LS-100,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLC6G27LS-100,118 is usually 5 days.

3.What payment methods are accepted for BLC6G27LS-100,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLC6G27LS-100,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BLC6G27LS-100,118?

BLC6G27LS-100,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLC6G27LS-100,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLC6G27LS-100,118?

For technical support, including BLC6G27LS-100,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLC6G27LS-100,118 requirements.

6.How does Aetrix verify that BLC6G27LS-100,118 is sourced from the original manufacturer or authorized distributors?

All BLC6G27LS-100,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLC6G27LS-100,118 meets industry standards.

7.What is the process for return or replacement of BLC6G27LS-100,118?

All BLC6G27LS-100,118 units undergo pre-shipment inspection (PSI). If there is an issue with BLC6G27LS-100,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLC6G27LS-100,118 part is unused and in its original packaging.

Return procedure for BLC6G27LS-100,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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