NXP Semiconductors BLC8G27LS-245AVJ

Overview

BLC8G27LS-245AVJ from Ampleon is a 240 W asymmetric Doherty LDMOS power transistor designed for base station RF power amplification in the 2500–2700 MHz band. It delivers 56 W average output power with 14.5 dB power gain, 43% drain efficiency, and −35 dBc adjacent channel power ratio under 1-carrier W-CDMA conditions at 2500–2690 MHz. Its ruggedness supports VSWR = 10:1 load mismatch tolerance at 2500 MHz.

For engineers reviewing the BLC8G27LS-245AVJ datasheet, BLC8G27LS-245AVJ pinout, BLC8G27LS-245AVJ application, or BLC8G27LS-245AVJ equivalent, this device requires attention to its dual-amplifier architecture (main + peak), thermal resistance (0.3 K/W), gate voltage limits (±0.5 V to +13 V), and internal matching for 50 Ω systems - critical for broadband Doherty PA design and digital pre-distortion implementation.

Technical Context

The BLC8G27LS-245AVJ integrates two laterally diffused MOSFETs - a main amplifier (IDq = 500 mA) and a peak amplifier (IDq = 660 mA) - on a single die within an air-cavity flanged package. It operates at VDS = 28 V with gate-source quiescent voltages of 2.1 V (main) and 2.1 V (peak), enabling high-efficiency asymmetrical Doherty operation across 2500–2700 MHz.

Its low thermal resistance (0.3 K/W) and integrated ESD protection (HBM Class 2, CDM Class C2A) support stable high-power operation in production-class base station amplifiers. The device exhibits 110 MHz typical video bandwidth in Doherty configuration and is characterized for low memory effects to facilitate effective digital pre-distortion.

Key Specifications

Pinout & Package

Air cavity plastic earless flanged package SOT1251-2 (9.6 mm × 32.3 mm × 10.2 mm), thermally optimized with flange-connected drain terminals and integrated ESD protection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM30L025N and BLC8G27LS-245, the BLC8G27LS-245AVJ provides best-in-class thermal resistance (0.3 K/W) and integrated ESD protection for LDMOS-based base station PAs, making it optimal for cost-sensitive, high-reliability deployments where GaN adoption is not yet justified.

Availability

BLC8G27LS-245AVJ is available at Aetrix Electronics and suitable for 4G LTE base station development, multi-carrier W-CDMA infrastructure, and remote radio head production requiring stable component supply and long-term lifecycle support.

Supply support for BLC8G27LS-245AVJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Ampleon Netherlands B.V. is a global leader in RF power transistors, spun off from NXP in 2015, specializing in LDMOS and GaN solutions for wireless infrastructure, broadcast, and industrial applications.

The BLC8G27LS-245AVJ belongs to Ampleon's BLC8GxxLS series of asymmetric Doherty LDMOS transistors, engineered specifically for energy-efficient, spectrally clean 4G/LTE base station power amplifiers operating in the 2.5–2.7 GHz band.

FAQ

What is the maximum continuous drain-source voltage rating for the BLC8G27LS-245AVJ?

The BLC8G27LS-245AVJ has a maximum continuous drain-source voltage (VDS) rating of 65 V, as defined in IEC 60134 limiting values. This rating applies under all operating conditions including VSWR = 10:1 mismatch events at 2500 MHz, ensuring safe operation in demanding base station environments where transient overvoltages may occur.

Does the BLC8G27LS-245AVJ require external matching networks for 2600 MHz operation?

No, the BLC8G27LS-245AVJ is internally matched for 50 Ω systems across 2500–2700 MHz. Its input return loss is −10 dB (typical) at 56 W output, and load-pull data confirms optimal ZL values (e.g., 1.0 − j4.5 Ω for main device at 2600 MHz), allowing direct integration without discrete matching components in standard Doherty demo layouts.

How does the BLC8G27LS-245AVJ support digital pre-distortion (DPD) implementation?

The BLC8G27LS-245AVJ is designed for low memory effects and exhibits 110 MHz typical video bandwidth in Doherty configuration. Its consistent AM-AM/AM-PM behavior across 2500–2700 MHz enables stable DPD coefficient convergence, achieving <−50 dBc residual ACPR after linearization - a key requirement for modern 4G/5G base station transceivers using real-time DPD.

What is the thermal resistance from junction to case (Rth(j-c)) for the BLC8G27LS-245AVJ?

The BLC8G27LS-245AVJ has a typical thermal resistance from junction to case (Rth(j-c)) of 0.3 K/W, measured at Tcase = 80 °C, PL = 56 W, VDS = 28 V, IDq = 500 mA (main), and VGS(amp)peak = 0.5 V. This value reflects its optimized SOT1251-2 air-cavity flanged package and enables reliable 240 W peak power operation with appropriate heatsinking.

Is the BLC8G27LS-245AVJ RoHS compliant and qualified for industrial temperature operation?

Yes, the BLC8G27LS-245AVJ is compliant with Directive 2002/95/EC (RoHS) and rated for storage temperatures from −65 °C to +150 °C and junction temperatures up to +225 °C. Its specifications are validated across Tcase = 25 °C to 80 °C, making it suitable for industrial-grade base station equipment deployed in uncontrolled outdoor enclosures.