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NXP Semiconductors BLD6G21L-50,112
- Part No.:
- BLD6G21L-50,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-1130A
- Datasheet:
-
BLD6G21L-50,112.pdf
- Description:
- RF MOSFET LDMOS 28V CDFM4
- Quantity:
- Payment:
- Shipping:
Inventory:10
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Product details
Overview
BLD6G21L-50 from NXP Semiconductors is a fully integrated Doherty RF power transistor using GEN6 LDMOS technology, designed for TD-SCDMA base station amplifiers operating at 2010–2025 MHz. It integrates main and peak amplifiers, input splitter, and output combiner in one flanged ceramic package (SOT1130A), delivering 8 W average output power, 14.5 dB power gain, and 43 % drain efficiency under 6-carrier TD-SCDMA excitation (PAR = 10.8 dB).
For engineers reviewing the BLD6G21L-50 datasheet, BLD6G21L-50 pinout, BLD6G21L-50 application, or BLD6G21L-50 equivalent, this device supports high-efficiency, digitally pre-distorted multi-carrier RF power amplification with independent main/peak bias control, rugged 10:1 VSWR tolerance, and factory-tested peak power capability.
Technical Context
The BLD6G21L-50 implements an asymmetrical Doherty architecture with a 90° input splitter and integrated combiner, enabling high efficiency at back-off power levels typical of TD-SCDMA signals. Its dual-gate structure allows separate DC biasing of main (VGSq = 2.05 V typ.) and peak (VGS(amp)peak = 0 V) amplifiers, with thermal resistance Rth(j-case) = 2.1 K/W at 8 W output.
It operates at VDS = 28 V with IDq = 170 mA (main), supports pulsed CW and modulated TD-SCDMA waveforms, and features internally matched 50 Ω input/output impedance-requiring only external matching networks for production deployment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2010–2025 MHz - Optimized for TD-SCDMA band, not usable outside this range without re-characterization. |
| Average Output Power | 8 W - Measured under 6-carrier TD-SCDMA signal (PAR = 10.8 dB, 0.01% CCDF), defines linear operating envelope. |
| Power Gain | 14.5 dB - Small-signal to saturated gain at 8 W output, enables compact driver stage design. |
| Drain Efficiency | 43 % - Peak efficiency at 8 W average output, reduces thermal load and power supply requirements. |
| ACPR | −24 dBc - Adjacent channel power ratio at 8 W, meets TD-SCDMA spectral mask requirements. |
| Output at 3 dB Compression | 53 W - Delivers headroom for transient peaks; critical for digital pre-distortion implementation. |
| VDS Rating | 65 V - Absolute maximum drain-source voltage; ensures safe operation at 28 V nominal supply. |
Pinout & Package
BLD6G21L-50 uses the SOT1130A flanged ceramic package (17.12 × 9.65 mm, 4 leads + flange), with metalized flange electrically connected to pin 3 (source) for thermal and RF grounding. The package includes two mounting holes and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | High-current RF output node; connects to output matching network and heatsink via flange. |
| 2 | Gate + Bias Main | Combined RF input and DC bias path for main amplifier; requires DC blocking and bias feed network. |
| 3 | Source | Common source terminal for both main and peak devices; tied to flange for low-inductance ground return. |
| 4 | n.c. | No internal connection; must remain unconnected on PCB to avoid parasitic coupling. |
| 5 | Bias Peak | Dedicated DC bias input for peak amplifier; enables independent gate voltage control down to 0 V. |
Key Features
| Feature | Design Value |
|---|---|
| Fully integrated Doherty architecture | Eliminates discrete splitter/combiner components, reducing board area, insertion loss, and assembly complexity. |
| Independent main/peak bias control | Enables precise optimization of efficiency vs. linearity trade-offs across output power range via VGS(amp)peak tuning. |
| 100 % peak power tested | Guarantees minimum 53 W P3dB performance per unit, ensuring consistent DPD convergence and system reliability. |
| Ruggedness at VSWR = 10:1 | Withstands full mismatch under 28 V, 8 W TD-SCDMA operation-no external protection circuitry required. |
| Integrated ESD protection | Meets HBM Class 1C (≥1 kV) requirements, reducing handling sensitivity during assembly and test. |
Applications
| TD-SCDMA Base Station PA | Digital Pre-Distortion Amplifier |
|---|---|
Use Scenario: Multi-carrier TD-SCDMA macro base station transmitter operating in 2010–2025 MHz band with 6-carrier configuration and 10.8 dB PAR. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 8 W average output with Doherty efficiency enhancement. Use Value: Achieves 43 % drain efficiency at 8 W while maintaining −24 dBc ACPR, reducing cooling requirements and AC power draw. | Use Scenario: Linearized RF PA subsystem using digital pre-distortion (DPD) to correct wideband TD-SCDMA signal distortion. IC Role / Device Role / Timing Role: High-linearity, high-headroom Doherty transistor enabling >30 dB ACLR improvement with DPD feedback loop. Use Value: 53 W P3dB output provides sufficient peak headroom for DPD convergence, minimizing residual intermodulation. |
| High-Efficiency Cellular Infrastructure | Ruggedized Remote Radio Head (RRH) |
Use Scenario: Energy-efficient outdoor cellular base station requiring high thermal stability and long service life in variable ambient conditions. IC Role / Device Role / Timing Role: Primary RF output device with integrated thermal path (Rth(j-case) = 2.1 K/W) and flange-mounted mechanical interface. Use Value: Low junction-to-case thermal resistance enables stable operation at Tcase = 80 °C, extending MTBF in sealed enclosures. | Use Scenario: Remote radio head deployed on cell tower with potential for antenna VSWR excursions up to 10:1. IC Role / Device Role / Timing Role: Fault-tolerant final amplifier capable of surviving sustained 10:1 mismatch without degradation or latch-up. Use Value: Eliminates need for external circulators or VSWR protection circuits, lowering BOM cost and failure points. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLD6G21LS-50 | Same die, earless flanged ceramic package (SOT1130B); no mounting holes; identical RF specs and biasing. | Suitable for space-constrained RRH modules where flange mounting is via adhesive or spring clip instead of screws. | Select BLD6G21LS-50 when mechanical integration favors compact footprint over screw-mount rigidity. |
| MRF6VP2600HR5 | 600 W GaN HEMT; higher power, wider bandwidth (1805–2200 MHz); requires external Doherty combiner/splitter. | Applicable to LTE/5G macro base stations needing scalable output beyond TD-SCDMA requirements. | Choose MRF6VP2600HR5 only when upgrading to multi-standard infrastructure with higher output and bandwidth demands. |
Compared with BLD6G21LS-50, the BLD6G21L-50 offers superior mechanical stability via two mounting holes but same electrical performance; versus MRF6VP2600HR5, it delivers lower-cost, plug-and-play Doherty integration at the expense of scalability and frequency flexibility.
Availability
BLD6G21L-50 is available at Aetrix Electronics and suitable for TD-SCDMA base station transmitters, digital pre-distortion amplifier designs, and ruggedized remote radio head deployments requiring stable component supply and long-term lifecycle support.
Supply support for BLD6G21L-50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power, NFC, and secure microcontrollers.
The BLD6G21L-50 belongs to NXP's GEN6 LDMOS RF power transistor family, engineered specifically for high-efficiency, high-linearity cellular infrastructure amplifiers operating in licensed sub-3 GHz bands.
FAQ
What is the recommended gate bias voltage for the main amplifier in BLD6G21L-50?
The BLD6G21L-50 specifies a typical gate-source quiescent voltage VGSq = 2.05 V at VDS = 28 V and IDq = 170 mA for the main amplifier. This value is derived from the device's threshold voltage (VGS(th) = 1.8 V typ.) and transconductance characteristics. Proper biasing within the 1.55–2.55 V min–max range ensures optimal linearity and efficiency; deviation may cause gain compression or thermal runaway. Always verify with in-circuit measurement under thermal equilibrium.
Does BLD6G21L-50 require external input/output matching networks?
Yes, the BLD6G21L-50 is internally matched to 50 Ω at the package reference plane but requires external input and output matching networks to achieve specified RF performance (8 W, 14.5 dB gain, −24 dBc ACPR) in a production circuit. The datasheet provides typical ZS and ZL impedance values (e.g., ZS = 3.6 − j12.7 Ω at 2017.5 MHz) to guide matching network design. Omitting these networks results in significant gain loss and spectral regrowth.
Can BLD6G21L-50 operate with peak amplifier bias set above 0 V?
Yes, the BLD6G21L-50 supports peak amplifier gate-source voltage VGS(amp)peak from −0.5 V to +13 V, and performance curves show tunable efficiency vs. linearity trade-offs across 0–0.8 V. However, setting VGS(amp)peak > 0 V reduces Doherty efficiency enhancement and increases quiescent current. For TD-SCDMA compliance, 0 V bias is recommended to maximize 43 % drain efficiency at 8 W average output.
What is the thermal resistance from junction to case for BLD6G21L-50?
The BLD6G21L-50 has a typical thermal resistance Rth(j-case) = 2.1 K/W when operated at PL = 8 W and Tcase = 80 °C. This value assumes proper mechanical mounting of the flanged SOT1130A package to a heatsink with ≤ 0.5 N·m screw torque and thermally conductive interface material. Exceeding 200 °C junction temperature triggers permanent degradation; thermal design must maintain Tj ≤ 175 °C under worst-case ambient and power conditions.
Is BLD6G21L-50 suitable for LTE or 5G NR applications?
No, the BLD6G21L-50 is specifically characterized and optimized for TD-SCDMA operation at 2010–2025 MHz and is not validated for LTE (1805–2690 MHz) or 5G NR (n41, n77, n78) bands. Its gain flatness, ACPR, and efficiency degrade outside the specified frequency range. For LTE/5G, NXP recommends the MRF6VP2600HR5 or later-generation RF power transistors with broader bandwidth and higher linearity specifications.
BLD6G21L-50,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-1130A
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual, Common Source
- Frequency:
- 2.02GHz
- Gain:
- 14.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10.2A
- Noise Figure:
- -
- Current - Test:
- 170 mA
- Power - Output:
- 8W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- CDFM4
BLD6G21L-50,112 FAQ
1.How can I place an order for BLD6G21L-50,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLD6G21L-50,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLD6G21L-50,112 reliable?
The price and inventory of BLD6G21L-50,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLD6G21L-50,112 is usually 5 days.
3.What payment methods are accepted for BLD6G21L-50,112?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLD6G21L-50,112 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BLD6G21L-50,112?
BLD6G21L-50,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BLD6G21L-50,112 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLD6G21L-50,112?
For technical support, including BLD6G21L-50,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLD6G21L-50,112 requirements.
6.How does Aetrix verify that BLD6G21L-50,112 is sourced from the original manufacturer or authorized distributors?
All BLD6G21L-50,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLD6G21L-50,112 meets industry standards.
7.What is the process for return or replacement of BLD6G21L-50,112?
All BLD6G21L-50,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLD6G21L-50,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLD6G21L-50,112 part is unused and in its original packaging.
Return procedure for BLD6G21L-50,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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