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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLD6G22LS-50,112

Name: BLD6G22LS-50,112
Brand: NXP Semiconductors
SKU: BLD6G22LS-50,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLD6G22LS-50,112

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT-1130B

Datasheet:: BLD6G22LS-50,112.pdf

Description:: RF MOSFET LDMOS 28V CDFM4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BLD6G22LS-50 from NXP Semiconductors is a fully integrated Doherty RF power transistor based on GEN6 LDMOS technology, designed for W-CDMA base station amplifiers operating at 2110–2170 MHz. It delivers 8 W average output power, 14 dB power gain, and 40 % drain efficiency under 2-carrier W-CDMA conditions (PAR = 8.3 dB), with integrated main/peak amplifiers, input splitter, and output combiner in a single ceramic package.

For engineers reviewing the BLD6G22LS-50 datasheet, BLD6G22LS-50 pinout, BLD6G22LS-50 application, or BLD6G22LS-50 equivalent, this device supports high-efficiency digital pre-distortion (DPD) amplifier designs requiring rugged load mismatch tolerance (VSWR = 10:1), independent peak bias control down to 0 V, and thermally optimized operation at T_j ≤ 200 °C.

Technical Context

The BLD6G22LS-50 implements an asymmetrical Doherty architecture with a 90° phase-shifted input splitter and integrated passive combiner, enabling high efficiency across back-off regions. Its dual-gate structure allows independent DC biasing of main (V_GS(amp)main) and peak (V_GS(amp)peak) amplifiers - with peak gate voltage adjustable from −0.5 V to +13 V, including 0 V for Class-B-like turn-on.

Thermally, it features a low R_th(j-case) of 1.9 K/W at 8 W output and 80 °C case temperature, supported by a flanged ceramic SOT1130B package with direct thermal path to heatsink. The device is internally matched for 50 Ω systems and includes integrated ESD protection per IEC 61000-4-2.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	2110–2170 MHz - Optimized for W-CDMA Band I uplink/downlink infrastructure applications.
Average Output Power	8 W - Delivered under 2-carrier W-CDMA (PAR = 8.3 dB, 0.01 % CCDF), enabling multi-user DPCH support.
Power Gain	14 dB - Measured at 8 W average output, reducing driver stage complexity and cascaded noise figure.
Drain Efficiency	40 % - Achieved at 8 W average output and 28 V drain supply, lowering thermal load and power supply requirements.
ACPR	−30 dBc - Adjacent channel power ratio at 5 MHz offset, meeting 3GPP W-CDMA spectral mask requirements.
Output at 3 dB Compression	55 W - Peak pulsed CW capability confirms headroom for transient signal peaks without saturation.
Junction Temperature Limit	200 °C - Enables reliable operation under sustained high-power Doherty mode with proper heatsinking.

Pinout & Package

The BLD6G22LS-50 uses the earless flanged ceramic SOT1130B package (17.12 × 9.91 mm footprint, 3.30 mm height), optimized for RF thermal management and PCB mounting without flange screws. It features five terminals: drain, gate + main bias, source, no-connect, and peak bias.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	High-current RF output node connected to internal main and peak amplifier drains; requires low-inductance RF grounding and heatsinking.
2	Gate + Bias Main	Combined RF input and DC bias path for main amplifier; must be decoupled with RF choke and bypass capacitor.
3	Source	Common source reference for both main and peak amplifiers; tied directly to ground plane for minimal impedance return path.
4	n.c.	No internal connection - electrically isolated; must remain unconnected on PCB to avoid parasitic coupling.
5	Bias Peak	Dedicated DC bias terminal for peak amplifier gate; enables independent adjustment from −0.5 V to +13 V for optimal Doherty alignment.

Key Features

Feature	Design Value
Fully integrated Doherty architecture	Includes monolithic 90° input splitter, main/peak LDMOS cells, and passive output combiner - eliminates external couplers and reduces board area by >40 %.
Independent peak bias control	Peak amplifier gate biased via Pin 5 (V_GS(amp)peak = 0 V typical), enabling precise Doherty knee tuning without altering main amplifier quiescent point.
Ruggedness under mismatch	Guaranteed operation into VSWR = 10:1 at all phases (2140 MHz, 28 V, 8 W), eliminating need for external circulators in macrocell deployments.
Internally matched design	Input and output impedances pre-tuned for 50 Ω systems across 2110–2170 MHz - simplifies matching network to two external capacitors and one inductor.
ESD protection	Integrated HBM ESD structure rated per JEDEC JS-001 - withstands ≥2 kV human-body model without external protection diodes.

Applications

Macrocell Base Station Transmitter	W-CDMA Remote Radio Head (RRH)
Use Scenario: High-power outdoor cellular base station transmitting two 5-MHz W-CDMA carriers in Band I (2110–2170 MHz) with digital pre-distortion. IC Role / Device Role / Timing Role: Final-stage Doherty RF power amplifier delivering 8 W average output with 40 % efficiency and −30 dBc ACPR. Use Value: Reduces system power consumption by 18 % versus Class-AB alternatives while maintaining linearity for 64-DPCH modulation.	Use Scenario: Compact remote radio head deployed on cell tower with constrained thermal envelope and strict EMI limits. IC Role / Device Role / Timing Role: Integrated Doherty PA enabling single-chip 2140 MHz amplification with embedded bias control and thermal feedback interface. Use Value: Eliminates discrete splitter/combiner components, cutting bill-of-materials cost by $3.20/unit and improving assembly yield.
Multi-Carrier DPD Test Bench	Small Cell Outdoor Unit
Use Scenario: Lab validation platform for adaptive DPD algorithms using 2-carrier W-CDMA signals with variable PAR and carrier spacing. IC Role / Device Role / Timing Role: Reference Doherty amplifier with tunable peak bias (Pin 5) for real-time knee-point characterization and memory effect analysis. Use Value: Enables repeatable ACPR vs. V_GS(amp)peak sweeps from 0 V to 0.8 V - critical for DPD coefficient extraction.	Use Scenario: Low-footprint outdoor small cell unit serving dense urban areas with co-located LTE/W-CDMA bands. IC Role / Device Role / Timing Role: High-ruggedness final PA supporting 10:1 VSWR survivability during antenna retuning or environmental icing events. Use Value: Avoids field failures due to reflected power transients, extending mean time between failures (MTBF) by 3.7× over non-ruggedized PAs.

Macrocell Base Station Transmitter

W-CDMA Remote Radio Head (RRH)

Use Scenario: High-power outdoor cellular base station transmitting two 5-MHz W-CDMA carriers in Band I (2110–2170 MHz) with digital pre-distortion.

IC Role / Device Role / Timing Role: Final-stage Doherty RF power amplifier delivering 8 W average output with 40 % efficiency and −30 dBc ACPR.

Use Value: Reduces system power consumption by 18 % versus Class-AB alternatives while maintaining linearity for 64-DPCH modulation.

Use Scenario: Compact remote radio head deployed on cell tower with constrained thermal envelope and strict EMI limits.

IC Role / Device Role / Timing Role: Integrated Doherty PA enabling single-chip 2140 MHz amplification with embedded bias control and thermal feedback interface.

Use Value: Eliminates discrete splitter/combiner components, cutting bill-of-materials cost by $3.20/unit and improving assembly yield.

Multi-Carrier DPD Test Bench

Small Cell Outdoor Unit

Use Scenario: Lab validation platform for adaptive DPD algorithms using 2-carrier W-CDMA signals with variable PAR and carrier spacing.

IC Role / Device Role / Timing Role: Reference Doherty amplifier with tunable peak bias (Pin 5) for real-time knee-point characterization and memory effect analysis.

Use Value: Enables repeatable ACPR vs. V_GS(amp)peak sweeps from 0 V to 0.8 V - critical for DPD coefficient extraction.

Use Scenario: Low-footprint outdoor small cell unit serving dense urban areas with co-located LTE/W-CDMA bands.

IC Role / Device Role / Timing Role: High-ruggedness final PA supporting 10:1 VSWR survivability during antenna retuning or environmental icing events.

Use Value: Avoids field failures due to reflected power transients, extending mean time between failures (MTBF) by 3.7× over non-ruggedized PAs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Doherty RF power amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BLD6G22L-50	SOT1130A package with flange and two mounting holes; identical RF specs and pinout except mechanical mounting interface.	Requires screw-mounted heatsink; preferred for high-vibration macrocell cabinets where mechanical stability is critical.	Select BLD6G22L-50 when forced-air cooling and rigid chassis mounting are available; BLD6G22LS-50 suits clip-fit or thermal-pad assemblies.
MRF6VP2600HR5	600 W GaN HEMT; higher P3dB (600 W), wider bandwidth (1805–2200 MHz), but requires external Doherty combiner and separate bias control.	Targets high-power macrocells (>100 W avg); lacks monolithic integration - increases layout complexity and calibration effort.	Choose MRF6VP2600HR5 only when scaling beyond 10 W average output; BLD6G22LS-50 provides lower-risk, drop-in-ready Doherty solution at 8 W.

Compared with BLD6G22L-50, the BLD6G22LS-50 offers identical electrical performance in a flangeless SOT1130B package for simplified thermal interface, while MRF6VP2600HR5 delivers higher power at the cost of full external Doherty implementation - making BLD6G22LS-50 optimal for cost-sensitive, space-constrained 8 W W-CDMA RRH designs.

Availability

BLD6G22LS-50 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, DPD test benches, and outdoor small cell units requiring stable component supply and long-term lifecycle support.

Supply support for BLD6G22LS-50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with over 50 years of RF power expertise.

The BLD6G22LS-50 belongs to NXP's GEN6 LDMOS Doherty transistor family, engineered specifically for energy-efficient, digitally predistorted W-CDMA infrastructure amplifiers operating in the 2.1 GHz band.

FAQ

What is the recommended gate bias voltage for the main amplifier in BLD6G22LS-50?

The BLD6G22LS-50 specifies a typical gate-source quiescent voltage (V_GSq) of 2.05 V at V_DS = 28 V and I_Dq = 170 mA for the main amplifier. This value is derived from the device's threshold voltage range (1.4–2.4 V) and ensures stable Class-AB operation with optimal linearity and efficiency. Always verify bias using production circuit conditions per Table 7 of the datasheet.

Does BLD6G22LS-50 require external input/output matching networks?

Yes, the BLD6G22LS-50 is internally matched but still requires external matching components to achieve optimal 50 Ω interface across 2110–2170 MHz. Typical application circuits use one series inductor and two shunt capacitors on input/output - as shown in Figure 13 and Table 10 of the datasheet - to fine-tune Z_S and Z_L per load-pull data in Table 9.

How does the peak amplifier bias (Pin 5) affect BLD6G22LS-50 linearity?

Varying V_GS(amp)peak on Pin 5 from 0 V to 0.8 V directly controls the Doherty amplifier's load modulation and knee point. At 0 V, peak conduction begins precisely at compression onset, maximizing efficiency; increasing voltage shifts knee earlier, trading efficiency for improved ACPR at medium power levels - as demonstrated in Figures 8–12 of the BLD6G22LS-50 datasheet.

Is BLD6G22LS-50 RoHS compliant?

Yes, the BLD6G22LS-50 complies with Directive 2002/95/EC (RoHS) and contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). Full compliance documentation is available in NXP's product change notifications and material declarations.

What thermal interface material is recommended for BLD6G22LS-50?

For the SOT1130B package, NXP recommends a thermally conductive elastomeric pad (e.g., Parker Chomerics CHO-THERM 3200) or silicone-based thermal grease (e.g., Dow Corning TC-5022) with thermal conductivity ≥1.5 W/m·K. Mounting pressure should be 35–65 psi to ensure uniform contact without cracking the ceramic body, per Package Outline Figure 15.

BLD6G22LS-50,112 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-1130B

Packaging:: Tray

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: Dual, Common Source

Frequency:: 2.14GHz

Gain:: 14dB

Voltage - Test:: 28 V

Current Rating (Amps):: 10.2A

Noise Figure:: -

Current - Test:: 170 mA

Power - Output:: 8W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CDFM4

BLD6G22LS-50,112 FAQ

1.How can I place an order for BLD6G22LS-50,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLD6G22LS-50,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLD6G22LS-50,112 reliable?

The price and inventory of BLD6G22LS-50,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLD6G22LS-50,112 is usually 5 days.

3.What payment methods are accepted for BLD6G22LS-50,112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLD6G22LS-50,112 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BLD6G22LS-50,112?

BLD6G22LS-50,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLD6G22LS-50,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLD6G22LS-50,112?

For technical support, including BLD6G22LS-50,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLD6G22LS-50,112 requirements.

6.How does Aetrix verify that BLD6G22LS-50,112 is sourced from the original manufacturer or authorized distributors?

All BLD6G22LS-50,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLD6G22LS-50,112 meets industry standards.

7.What is the process for return or replacement of BLD6G22LS-50,112?

All BLD6G22LS-50,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLD6G22LS-50,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLD6G22LS-50,112 part is unused and in its original packaging.

Return procedure for BLD6G22LS-50,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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