NXP Semiconductors BLF1046,112

Overview

BLF1046,112 from Ampleon (formerly NXP RF Power) is a UHF power LDMOS transistor designed for broadband transmitter output stages in 960 MHz communication systems. It delivers 45 W PEP output power at 26 V drain supply, with >14 dB power gain and >46% drain efficiency in CW class-AB operation. Its flanged ceramic SOT467C package enables high-power thermal management in base station amplifiers.

For engineers reviewing the BLF1046,112 datasheet, BLF1046,112 pinout, BLF1046,112 application, or BLF1046,112 equivalent, key selection criteria include its 960 MHz UHF performance, ruggedness under 10:1 VSWR mismatch, source-connected flange architecture, and suitability for EDGE 8PSK linear amplification with EVM <4% at 12 W.

Technical Context

The BLF1046,112 is a silicon N-channel enhancement-mode lateral D-MOS transistor operating in common-source configuration with drain, gate, and source terminals-where the source is electrically tied to the mounting flange. It supports broadband tuning from 800–1000 MHz using external matching networks per Figs. 15–16.

Its ruggedness is validated for VSWR = 10:1 across all phase angles at 960 MHz, 26 V, and rated load power. Thermal resistance from junction to heatsink is 1.87 K/W, enabling stable operation up to 200 °C junction temperature under specified RF conditions.

Key Specifications

Pinout & Package

Encapsulated in a flanged ceramic SOT467C package (2 mounting holes, 2 leads), the BLF1046,112 features a source-connected metal flange for low-inductance grounding and DC return. The package dimensions are 18.54 × 5.59 × 3.43 mm (L × W × H), with flange thickness 1.65 mm and lead pitch 9.25 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar UHF power transistor applications.

Compared with MRF101AN and PD85008, the BLF1046,112 offers optimal balance of 45 W PEP, 960 MHz focus, flange-integrated source, and proven VSWR ruggedness-making it the preferred choice for cost-sensitive, thermally constrained UHF base station final stages.

Availability

BLF1046,112 is available at Aetrix Electronics and suitable for UHF base station transmitters, EDGE 8PSK power amplifiers, and public safety radio repeaters requiring stable component supply and long-term lifecycle support.

Supply support for BLF1046,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Ampleon is a global leader in RF power semiconductors, spun off from NXP's RF Power division in 2015 and headquartered in Nijmegen, Netherlands.

The BLF1046,112 belongs to Ampleon's UHF LDMOS portfolio, engineered specifically for high-efficiency, high-ruggedness transmitter applications in 800–1000 MHz infrastructure equipment.

FAQ

What is the maximum drain-source voltage rating for the BLF1046,112?

The BLF1046,112 has a maximum drain-source voltage (V_DS) rating of 65 V, as defined in its Absolute Maximum Ratings table. This rating ensures safe operation under transient overvoltage conditions typical in RF amplifier switching and mismatch events. The device is typically operated at 26 V DC supply in standard UHF applications, well within this limit. Always observe derating guidelines for elevated temperature operation per the datasheet's limiting values section.

Does the BLF1046,112 require external DC blocking on the source terminal?

No, the BLF1046,112 does not require external DC blocking on the source terminal because the source is directly connected to the mounting flange, which serves as the common DC and RF ground reference. This source-on-flange architecture eliminates the need for DC isolators in the source path, reducing common-mode inductance and improving stability-especially critical above 500 MHz. Proper flange grounding to a low-impedance heatsink remains essential for optimal performance.

Can the BLF1046,112 be used in pulsed RF applications?

The BLF1046,112 is characterized and qualified for continuous-wave (CW) and two-tone class-AB operation-not pulsed RF. Its thermal model and ruggedness validation assume steady-state or quasi-steady-state power dissipation. While short-duration pulses may be feasible depending on duty cycle and peak power, Ampleon does not specify pulse ratings (e.g., t_p, duty cycle, peak current) for the BLF1046,112. For dedicated pulsed applications, consult Ampleon's pulsed-LDMOS product family such as the BLF2425M9LS.

What is the gate-source threshold voltage range for the BLF1046,112?

The gate-source threshold voltage (V_GSth) for the BLF1046,112 is specified as 4–5 V at V_DS = 10 V and I_D = 70 mA. This tightly controlled threshold enables consistent class-AB biasing across production lots and simplifies gate drive design. When designing the bias network, ensure gate voltage remains within ±20 V absolute maximum rating and accounts for temperature drift-typical V_GSth decreases by ~2 mV/°C.

Is the BLF1046,112 RoHS compliant and halogen-free?

Yes, the BLF1046,112 is RoHS compliant and halogen-free per Ampleon's product change notification PCN-2017-001. The SOT467C package uses lead-free solderable terminations and complies with EU Directive 2011/65/EU and JEDEC J-STD-609A Class 1. Material declarations and test reports are available through Ampleon's official product portal. No exemptions apply-the device contains no lead, mercury, cadmium, hexavalent chromium, PBB, PBDE, or regulated chlorinated/brominated flame retardants.