Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLF1820-90,112

Name: BLF1820-90,112
Brand: NXP Semiconductors
SKU: BLF1820-90,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BLF1820-90,112

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT-502A

Datasheet:: BLF1820-90,112.pdf

Description:: RF MOSFET LDMOS 26V LDMOST

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,116

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BLF1820-90 from NXP Semiconductors (formerly Philips) is a 90 W UHF LDMOS power transistor designed for base station RF power amplification in the 1800–2000 MHz band. It delivers 90 W PEP output power at 26 V supply, 12 dB gain, and 32% drain efficiency under two-tone class-AB operation with −26 dBc intermodulation distortion.

For engineers reviewing the BLF1820-90 datasheet, BLF1820-90 pinout, BLF1820-90 application, or BLF1820-90 equivalent, key selection criteria include its internally matched broadband design, ruggedness under 10:1 VSWR mismatch, thermal resistance of 0.81 K/W, and flanged SOT502A ceramic package optimized for high-power RF thermal management.

Technical Context

The BLF1820-90 operates as a common-source, enhancement-mode LDMOS transistor with gate-source threshold voltage of 4.4–5.5 V and forward transconductance of 6.2 S. Its drain-source breakdown voltage is rated at 65 V, supporting stable 26 V DC supply operation with peak envelope power handling up to 90 W in multicarrier GSM/EDGE/CDMA systems.

Designed for broadband 1800–2000 MHz operation, it features internally matched input and output impedances, low feedback capacitance (5.1 pF), and excellent thermal stability enabled by a junction-to-heatsink thermal resistance of 0.81 K/W - critical for continuous high-power base station amplifier reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
Output Power	90 W PEP at 2000 MHz, enabling single-device support for multicarrier GSM/EDGE base station PA stages
Power Gain	12 dB typical, reducing driver stage complexity and cascaded gain requirements
Drain Efficiency	32% at 90 W PEP, lowering heat dissipation and power supply load in 24–28 V telecom systems
Intermodulation Distortion	−26 dBc (two-tone), meeting spectral mask requirements for CDMA and EDGE modulation schemes
Thermal Resistance	0.81 K/W junction-to-heatsink, allowing direct mounting to heatsinks without thermal interface material derating
V_BRDSS	65 V minimum, providing 2.5× margin over 26 V operating rail for transient voltage robustness
R_DS(on)	0.1 Ω typical, minimizing conduction loss and improving linearity under high-current PEP conditions

Pinout & Package

Flanged ceramic SOT502A package with isolated metal flange (pin 3) serving as both source terminal and mechanical heatsink interface. Three-terminal configuration supports high-power RF layout with low-inductance source grounding and optimized thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	RF power output node; requires low-impedance RF choke and DC blocking; electrically connected to package top metallization
2	Gate	High-impedance RF input; requires ESD protection and bias network decoupling; sensitive to layout parasitics
3	Source / Flange	DC and RF return path; directly bonded to heatsink; serves as primary thermal conduction path to ambient

Key Features

Feature	Design Value
Internally matched broadband design	Eliminates external matching networks for 1800–2000 MHz operation, reducing PCB area and tuning effort
Ruggedness under VSWR = 10:1	Sustains full 90 W PEP into severe load mismatch at 2000 MHz without failure, enhancing field reliability
High power gain (12 dB)	Reduces required driver stage output power, enabling use of lower-cost, lower-power driver ICs
Low feedback capacitance (5.1 pF)	Minimizes instability risk and simplifies stabilization network design in high-gain PA configurations
Enhanced thermal stability	Stable gain and efficiency across junction temperature range due to LDMOS process uniformity and low R_th

Applications

GSM Base Station Transmitter	EDGE Multicarrier Amplifier
Use Scenario: High-efficiency final-stage power amplifier in macrocell BTS operating at 1800–1990 MHz with 4-carrier configuration. IC Role / Device Role / Timing Role: UHF LDMOS power transistor delivering 90 W PEP output with 12 dB small-signal gain and 32% drain efficiency. Use Value: Enables single-transistor PA architecture with reduced thermal footprint and simplified bias sequencing versus discrete FET arrays.	Use Scenario: Linearized multicarrier amplifier for EDGE base stations requiring low adjacent channel leakage ratio (ACLR). IC Role / Device Role / Timing Role: Final-stage RF power device operating in class-AB with −26 dBc two-tone IMD performance. Use Value: Meets stringent EDGE ACLR specifications without complex digital predistortion overhead, lowering system cost.
CDMA2000 Base Station PA	UHF Broadcast Auxiliary Transmitter
Use Scenario: High-linearity 2000 MHz PA stage in CDMA2000 base station infrastructure with 1.23 MHz channel spacing. IC Role / Device Role / Timing Role: LDMOS transistor delivering 90 W PEP with <−25 dBc third-order intermodulation distortion. Use Value: Supports wide dynamic range signal handling while maintaining spectral purity per IS-2000 standards.	Use Scenario: Compact, air-cooled UHF transmitter module for broadcast auxiliary links (e.g., STL, ENG) in 1800–2000 MHz band. IC Role / Device Role / Timing Role: High-ruggedness RF power device capable of continuous 90 W operation with 0.81 K/W thermal resistance. Use Value: Eliminates need for forced-air cooling or liquid cooling in portable or remote broadcast equipment.

GSM Base Station Transmitter

EDGE Multicarrier Amplifier

Use Scenario: High-efficiency final-stage power amplifier in macrocell BTS operating at 1800–1990 MHz with 4-carrier configuration.

IC Role / Device Role / Timing Role: UHF LDMOS power transistor delivering 90 W PEP output with 12 dB small-signal gain and 32% drain efficiency.

Use Value: Enables single-transistor PA architecture with reduced thermal footprint and simplified bias sequencing versus discrete FET arrays.

Use Scenario: Linearized multicarrier amplifier for EDGE base stations requiring low adjacent channel leakage ratio (ACLR).

IC Role / Device Role / Timing Role: Final-stage RF power device operating in class-AB with −26 dBc two-tone IMD performance.

Use Value: Meets stringent EDGE ACLR specifications without complex digital predistortion overhead, lowering system cost.

CDMA2000 Base Station PA

UHF Broadcast Auxiliary Transmitter

Use Scenario: High-linearity 2000 MHz PA stage in CDMA2000 base station infrastructure with 1.23 MHz channel spacing.

IC Role / Device Role / Timing Role: LDMOS transistor delivering 90 W PEP with <−25 dBc third-order intermodulation distortion.

Use Value: Supports wide dynamic range signal handling while maintaining spectral purity per IS-2000 standards.

Use Scenario: Compact, air-cooled UHF transmitter module for broadcast auxiliary links (e.g., STL, ENG) in 1800–2000 MHz band.

IC Role / Device Role / Timing Role: High-ruggedness RF power device capable of continuous 90 W operation with 0.81 K/W thermal resistance.

Use Value: Eliminates need for forced-air cooling or liquid cooling in portable or remote broadcast equipment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar UHF LDMOS power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF6V2150N	Higher PEP (150 W), higher V_BRDSS (110 V), larger SOT-1227 package, 0.55 K/W R_{th j-h}	Targeted at 2110–2170 MHz WCDMA; requires redesigned heatsink and matching network	Select when >90 W output or extended frequency coverage beyond 2000 MHz is required
PD57018-E	Lower PEP (70 W), 1800–2200 MHz bandwidth, 0.75 K/W R_{th j-h}, smaller SOT-1136 package	Optimized for compact microcell deployments; reduced thermal mass limits duty-cycle headroom	Select when board space is constrained and 70 W suffices for distributed antenna systems

Compared with MRF6V2150N and PD57018-E, the BLF1820-90 offers optimal balance of 90 W PEP, 1800–2000 MHz bandwidth, and proven ruggedness in legacy GSM/EDGE infrastructure - making it the preferred choice where exact frequency alignment and field-proven reliability outweigh raw power scaling.

Availability

BLF1820-90 is available at Aetrix Electronics and suitable for GSM base station transmitters, EDGE multicarrier amplifiers, and CDMA2000 infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.

Supply support for BLF1820-90 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in high-performance RF power solutions, automotive, security, and connectivity technologies, with deep heritage in Philips' RF transistor innovation.

The BLF1820-90 belongs to NXP's UHF LDMOS power transistor product line, engineered specifically for high-efficiency, high-reliability RF power amplification in cellular base station infrastructure operating between 1800 and 2000 MHz.

FAQ

What is the maximum safe operating drain-source voltage for BLF1820-90?

The BLF1820-90 has an absolute maximum drain-source voltage (V_DS) rating of 65 V, per IEC 60134 limiting values. Operation at 26 V DC supply provides 2.5× voltage margin for transient spikes and ensures long-term reliability in base station environments where power rail transients are common. Exceeding 65 V risks permanent die damage.

Does BLF1820-90 require external impedance matching networks?

No - the BLF1820-90 is internally matched for 1800–2000 MHz operation, meaning its input and output impedances are pre-tuned to near 50 Ω at the die level. External matching is optional and only needed for fine-tuning specific PA architectures; standard evaluation circuits (e.g., Fig.8) confirm functional operation without added matching components.

What thermal interface is recommended for BLF1820-90 mounting?

The BLF1820-90 uses a flanged SOT502A package where pin 3 (source/flange) serves as the primary thermal path. Direct metal-to-metal contact with a flat, polished heatsink surface is recommended - no thermal paste or pad is required if surface roughness is ≤1.6 µm Ra. The specified 0.81 K/W R_{th j-h} assumes this ideal interface; adding interface material increases thermal resistance.

Can BLF1820-90 operate reliably under 10:1 VSWR load mismatch?

Yes - the BLF1820-90 is characterized for ruggedness under 10:1 VSWR across all phase angles at 2000 MHz, 26 V, 750 mA IDQ, and 90 W PEP. This capability is verified per application note conditions and enables deployment in antenna systems prone to detuning without requiring circulators or active VSWR protection circuitry.

What is the gate-source threshold voltage range for BLF1820-90?

The BLF1820-90 has a gate-source threshold voltage (V_GS(th)) range of 4.4 V to 5.5 V, measured at V_DS = 10 V and I_D = 210 mA. This tight distribution supports consistent bias point setting across production lots and simplifies gate drive design for class-AB operation with 750 mA quiescent current.

BLF1820-90,112 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-502A

Packaging:: Tube

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 2GHz

Gain:: 11dB

Voltage - Test:: 26 V

Current Rating (Amps):: 12A

Noise Figure:: -

Current - Test:: 750 mA

Power - Output:: 90W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: LDMOST

BLF1820-90,112 FAQ

1.How can I place an order for BLF1820-90,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLF1820-90,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLF1820-90,112 reliable?

The price and inventory of BLF1820-90,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF1820-90,112 is usually 5 days.

3.What payment methods are accepted for BLF1820-90,112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF1820-90,112 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BLF1820-90,112?

BLF1820-90,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLF1820-90,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLF1820-90,112?

For technical support, including BLF1820-90,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF1820-90,112 requirements.

6.How does Aetrix verify that BLF1820-90,112 is sourced from the original manufacturer or authorized distributors?

All BLF1820-90,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF1820-90,112 meets industry standards.

7.What is the process for return or replacement of BLF1820-90,112?

All BLF1820-90,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF1820-90,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLF1820-90,112 part is unused and in its original packaging.

Return procedure for BLF1820-90,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…