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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLF2425M7LS140,112

Name: BLF2425M7LS140,112
Brand: NXP Semiconductors
SKU: BLF2425M7LS140,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLF2425M7LS140,112

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT-502B

Datasheet:: BLF2425M7LS140,112.pdf

Description:: RF MOSFET LDMOS 28V SOT502B

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BLF2425M7LS140 from NXP Semiconductors is a 140 W LDMOS power transistor designed for industrial, scientific, and medical (ISM) RF power amplification at 2400–2500 MHz. It operates in common-source class-AB configuration with 28 V drain supply, delivers 18.5 dB power gain, achieves 52% drain efficiency, and features internally matched input/output for simplified broadband design.

For engineers reviewing the BLF2425M7LS140 datasheet, BLF2425M7LS140 pinout, BLF2425M7LS140 application, or BLF2425M7LS140 equivalent, this page provides verified technical context, thermal resistance (0.28 K/W), ruggedness under 10:1 VSWR, RoHS-compliant ceramic packaging, and real-world RF performance at 2450 MHz CW operation.

Technical Context

This LDMOS transistor uses laterally diffused metal oxide semiconductor technology optimized for high-power continuous-wave (CW) operation in ISM band applications. Its design supports stable class-AB biasing at 1300 mA quiescent drain current and integrates ESD protection per ANSI/ESD S20.20 standards.

The device exhibits excellent thermal stability up to 225 °C junction temperature and withstands load mismatches of VSWR = 10:1 across all phases at 2450 MHz, 28 V, and 140 W output. Its internally matched 50 Ω input and output impedance simplifies PCB layout in RF power amplifier stages.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	2400–2500 MHz - Fully specified broadband operation for ISM band systems without external tuning.
Output Power (CW)	140 W - Delivers full rated RF output in production test circuit at 2450 MHz, T_case = 25 °C.
Power Gain	18.5 dB - Enables single-stage amplification with minimal driver stage complexity.
Drain Efficiency	52% - Reduces heat dissipation and DC power consumption in high-duty-cycle transmitters.
Thermal Resistance	0.28 K/W (j-c) - Supports high-power operation with manageable case temperature rise under 125 W load.
Ruggedness	VSWR = 10:1 - Survives severe load mismatch without failure, critical for industrial plasma and heating systems.
Gate Threshold Voltage	1.9 V (typ) - Ensures predictable turn-on behavior and stable bias point control in class-AB designs.

Pinout & Package

BLF2425M7LS140 is housed in an earless flanged ceramic package (SOT502B) with direct thermal path via flange mounting. The flange is electrically connected to the source terminal, enabling simplified grounding and heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	High-current RF output node; requires low-inductance connection to output matching network and DC feed.
2	Gate	RF input control terminal; must be DC-blocked and impedance-matched to 50 Ω for stable gain and linearity.
3	Source	Common reference node; tied to flange and PCB ground plane for thermal and RF return path integrity.

Key Features

Feature	Design Value
Internally matched	Input and output impedances pre-tuned for 50 Ω systems - eliminates need for discrete matching networks at 2400–2500 MHz.
Integrated ESD protection	Withstands human-body-model ESD events per ANSI/ESD S20.20 - reduces handling sensitivity and board-level protection requirements.
High power gain	18.5 dB typical - lowers driver stage output power requirement and improves overall system efficiency.
Excellent thermal stability	Stable gain and efficiency over 25–80 °C case temperature range - ensures consistent RF output in varying ambient conditions.
RoHS compliance	Meets Directive 2002/95/EC - enables use in environmentally regulated industrial and medical equipment markets.

Applications

Industrial RF Heating	Medical Diathermy Systems
Use Scenario: High-power RF energy delivery to dielectric materials for plastic welding, food processing, or drying. IC Role / Device Role / Timing Role: Final RF power amplification stage delivering 140 W CW into tuned cavity or applicator. Use Value: Ruggedness under 10:1 VSWR prevents failure during variable load coupling; 52% efficiency minimizes cooling demands in enclosed machinery.	Use Scenario: Controlled deep-tissue heating in therapeutic diathermy units operating at 2450 MHz. IC Role / Device Role / Timing Role: Primary RF power generator in solid-state diathermy amplifier modules. Use Value: Stable 18.5 dB gain enables precise output power regulation; flanged ceramic package ensures long-term reliability under continuous duty cycles.
ISM Band Plasma Generation	Scientific Microwave Spectroscopy
Use Scenario: Sustaining atmospheric-pressure plasma in semiconductor process tools or surface treatment systems. IC Role / Device Role / Timing Role: High-efficiency RF source driving planar or cylindrical plasma chambers. Use Value: Internally matched 50 Ω interface simplifies integration with directional couplers and circulators; 0.28 K/W thermal resistance maintains junction safety at sustained 140 W output.	Use Scenario: Local oscillator or excitation source in benchtop microwave spectroscopy setups requiring clean CW signals. IC Role / Device Role / Timing Role: Stable, low-noise RF power amplifier feeding waveguide or coaxial sample cells. Use Value: Excellent thermal stability preserves amplitude accuracy over measurement duration; 2400–2500 MHz bandwidth covers standard ISM spectroscopic bands.

Industrial RF Heating

Medical Diathermy Systems

Use Scenario: High-power RF energy delivery to dielectric materials for plastic welding, food processing, or drying.

IC Role / Device Role / Timing Role: Final RF power amplification stage delivering 140 W CW into tuned cavity or applicator.

Use Value: Ruggedness under 10:1 VSWR prevents failure during variable load coupling; 52% efficiency minimizes cooling demands in enclosed machinery.

Use Scenario: Controlled deep-tissue heating in therapeutic diathermy units operating at 2450 MHz.

IC Role / Device Role / Timing Role: Primary RF power generator in solid-state diathermy amplifier modules.

Use Value: Stable 18.5 dB gain enables precise output power regulation; flanged ceramic package ensures long-term reliability under continuous duty cycles.

ISM Band Plasma Generation

Scientific Microwave Spectroscopy

Use Scenario: Sustaining atmospheric-pressure plasma in semiconductor process tools or surface treatment systems.

IC Role / Device Role / Timing Role: High-efficiency RF source driving planar or cylindrical plasma chambers.

Use Value: Internally matched 50 Ω interface simplifies integration with directional couplers and circulators; 0.28 K/W thermal resistance maintains junction safety at sustained 140 W output.

Use Scenario: Local oscillator or excitation source in benchtop microwave spectroscopy setups requiring clean CW signals.

IC Role / Device Role / Timing Role: Stable, low-noise RF power amplifier feeding waveguide or coaxial sample cells.

Use Value: Excellent thermal stability preserves amplitude accuracy over measurement duration; 2400–2500 MHz bandwidth covers standard ISM spectroscopic bands.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDMOS RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BLF2425M7L140	SOT502A package with two mounting holes; identical electrical specs and thermal resistance.	Requires mechanical mounting with screws; preferred where enhanced mechanical stability or vibration resistance is needed.	Select BLF2425M7L140 when board-level mechanical rigidity is critical; BLF2425M7LS140 suits space-constrained layouts needing earless footprint.
CGH40010F	GaN HEMT; higher gain (20 dB), wider bandwidth (1.8–2.7 GHz), but lower ruggedness (VSWR = 6.5:1 max).	Better efficiency above 2500 MHz; less tolerant of mismatch in plasma or heating loads.	Choose CGH40010F for multi-band or higher-frequency extensions; retain BLF2425M7LS140 for proven 10:1 VSWR robustness in fixed ISM-band systems.

Compared with BLF2425M7L140, the BLF2425M7LS140 offers identical RF performance in a more compact earless package, while CGH40010F trades ruggedness for broader bandwidth and marginally higher gain-making BLF2425M7LS140 optimal for cost-sensitive, high-reliability ISM-band amplifiers where mechanical simplicity matters.

Availability

BLF2425M7LS140 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy, ISM plasma generation, and scientific microwave spectroscopy requiring stable component supply, traceable sourcing, and long-term lifecycle support.

Supply support for BLF2425M7LS140 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The BLF2425M7LS140 belongs to NXP's high-power RF LDMOS transistor product line, engineered specifically for reliable, high-efficiency CW amplification in industrial, scientific, and medical ISM-band systems.

FAQ

What is the maximum continuous drain current rating for BLF2425M7LS140?

The BLF2425M7LS140 is characterized at 1300 mA quiescent drain current (I_Dq) in class-AB operation. Its absolute maximum drain current is not explicitly specified, but limiting values define V_DS ≤ 65 V and T_j ≤ 225 °C. Operation must remain within safe operating area boundaries defined by simultaneous voltage, current, and thermal constraints in the datasheet.

Does BLF2425M7LS140 require external matching components?

No, BLF2425M7LS140 is internally matched for 50 Ω input and output impedance across 2400–2500 MHz. While external harmonic filtering or stabilization may be needed depending on system requirements, no primary impedance transformation networks are required for fundamental-band operation in a well-designed PCB layout.

What is the thermal resistance from junction to case for BLF2425M7LS140?

The thermal resistance from junction to case (R_th(j-c)) for BLF2425M7LS140 is 0.28 K/W, measured at T_case = 80 °C and P_L = 125 W. This value assumes proper mounting to a flat, smooth heatsink with recommended torque and thermal interface material.

Is BLF2425M7LS140 suitable for pulsed RF applications?

The BLF2425M7LS140 datasheet specifies performance for continuous wave (CW) operation only. While its ruggedness and thermal design support some pulsed duty cycles, NXP does not characterize or guarantee parameters such as peak power, pulse width tolerance, or duty cycle limits-designers must validate pulsed behavior empirically per application requirements.

How does BLF2425M7LS140 differ from BLF2425M7L140?

BLF2425M7LS140 and BLF2425M7L140 share identical electrical specifications, thermal performance, and RF characteristics. The sole difference is mechanical: BLF2425M7LS140 uses the earless SOT502B ceramic package, while BLF2425M7L140 uses the eared SOT502A package with two mounting holes-offering distinct PCB mounting options without functional trade-offs.

BLF2425M7LS140,112 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-502B

Packaging:: Tube

Product Status:: Active

Technology:: LDMOS

Configuration:: -

Frequency:: 2.45GHz

Gain:: 18.5dB

Voltage - Test:: 28 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 1.3 A

Power - Output:: 140W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: SOT502B

BLF2425M7LS140,112 FAQ

1.How can I place an order for BLF2425M7LS140,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLF2425M7LS140,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLF2425M7LS140,112 reliable?

The price and inventory of BLF2425M7LS140,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF2425M7LS140,112 is usually 5 days.

3.What payment methods are accepted for BLF2425M7LS140,112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF2425M7LS140,112 transactions.

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4.How is shipping managed for BLF2425M7LS140,112?

BLF2425M7LS140,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLF2425M7LS140,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLF2425M7LS140,112?

For technical support, including BLF2425M7LS140,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF2425M7LS140,112 requirements.

6.How does Aetrix verify that BLF2425M7LS140,112 is sourced from the original manufacturer or authorized distributors?

All BLF2425M7LS140,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF2425M7LS140,112 meets industry standards.

7.What is the process for return or replacement of BLF2425M7LS140,112?

All BLF2425M7LS140,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF2425M7LS140,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLF2425M7LS140,112 part is unused and in its original packaging.

Return procedure for BLF2425M7LS140,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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