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NXP Semiconductors BLF4G20LS-110B,112
- Part No.:
- BLF4G20LS-110B,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-502B
- Datasheet:
-
BLF4G20LS-110B,112.pdf
- Description:
- RF MOSFET LDMOS 28V SOT502B
- Quantity:
- Payment:
- Shipping:
Inventory:3,368
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Product details
Overview
BLF4G20LS-110B from Philips Semiconductors is a 110 W UHF LDMOS power transistor designed for base station RF power amplification in the 1800–2000 MHz band, delivering 48 W average output (GSM EDGE), 13.8 dB gain, and 38.5% drain efficiency at 28 V/650 mA, with −61 dBc ACPR400 and −74 dBc ACPR600 performance.
For engineers reviewing the BLF4G20LS-110B datasheet, BLF4G20LS-110B pinout, BLF4G20LS-110B application, or BLF4G20LS-110B equivalent, this page provides verified package mapping (SOT502B), thermal resistance (0.52–0.71 K/W), ruggedness rating (VSWR = 10:1), internally matched broadband operation, and GSM/EDGE/CDMA base station design context.
Technical Context
The BLF4G20LS-110B operates in class-AB mode with fixed 28 V drain supply and 650 mA quiescent drain current, optimized for multicarrier GSM EDGE signals at 1930–1990 MHz. Its LDMOS structure enables high ruggedness (VSWR = 10:1 survivability) and excellent thermal stability up to 200 °C junction temperature.
Internally matched for 50 Ω input/output impedance, it eliminates external matching networks in production test circuits. Key characteristics include 3.1 V gate threshold voltage, 9.0 S forward transconductance, and 2.5 pF feedback capacitance - all specified at 25 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1800–2000 MHz - supports full PCS/GSM1900 band without retuning |
| Output Power (GSM EDGE) | 48 W (AV) - sufficient for multicarrier 3-carrier EDGE base station stages |
| Power Gain | 13.8 dB (typ) - enables single-stage PA design with minimal driver complexity |
| Drain Efficiency | 38.5 % (typ) - reduces thermal load and DC power consumption in 28 V systems |
| ACPR400 | −61 dBc (typ) - meets ETSI GSM EDGE spectral mask requirements |
| Thermal Resistance (j-case) | 0.52–0.71 K/W - enables high-power CW operation with case temperature ≤80 °C |
| VSWR Ruggedness | 10:1 at all phases - ensures reliability under antenna mismatch in outdoor base stations |
Pinout & Package
Package: Earless flanged LDMOST ceramic package (SOT502B), thermally optimized with flange directly connected to drain for low-impedance heat path to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Main RF power output terminal; electrically and thermally tied to flange for direct heatsink mounting |
| 2 | Gate | RF input control terminal; requires stable bias network to maintain 3.2 V quiescent gate-source voltage |
| 3 | Source | Common reference node; used for current sensing and feedback in class-AB bias circuits |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched broadband operation | Eliminates discrete matching components across 1800–2000 MHz, reducing PCB area and tuning time |
| High ruggedness (VSWR = 10:1) | Enables deployment in uncontrolled RF environments without external circulators or isolators |
| Low thermal resistance (0.52 K/W @ 100 W) | Supports continuous 110 W CW operation with standard forced-air or heatsink cooling |
| GSM EDGE-optimized linearity | −61 dBc ACPR400 and 2.1% EVMrms meet 3GPP TS 45.005 for Class A/B base station transmitters |
| ESD-sensitive gate protection | Requires handling per IEC 61340-5-1; gate-source voltage limited to ±15 V to prevent oxide damage |
Applications
| GSM Base Station Transmitter | EDGE Multicarrier Amplifier |
|---|---|
Use Scenario: High-reliability macrocell site transmitting 8–12 GSM carriers in 1800–1990 MHz band with dynamic load variations. IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating in class-AB with 28 V supply and 650 mA IDq. Use Value: Delivers 48 W average output with −61 dBc ACPR400, enabling compliant 3GPP-compliant transmission without predistortion complexity. |
Use Scenario: Indoor distributed antenna system (DAS) head-end supporting concurrent EDGE data channels across multiple frequency blocks. IC Role / Device Role / Timing Role: Linearized PA stage driven by digital predistortion (DPD) feedback loop at 1990 MHz. Use Value: 2.1% EVMrms and −74 dBc ACPR600 ensure <1% packet error rate in 64-QAM EDGE modulation under real-world channel conditions. |
| CDMA2000 Base Station PA | PCS Band Repeater Output Stage |
Use Scenario: 1900 MHz CDMA2000 1xRTT base station sector amplifier requiring high adjacent-channel rejection and thermal resilience. IC Role / Device Role / Timing Role: High-efficiency final PA biased at 28 V/650 mA, operating in linear region for CDMA waveform envelope. Use Value: 38.5% drain efficiency and 10:1 VSWR ruggedness reduce cooling requirements and improve field MTBF in rooftop installations. |
Use Scenario: Bidirectional repeater unit deployed in rural coverage extension, amplifying uplink/downlink signals between 1850–1990 MHz bands. IC Role / Device Role / Timing Role: Downlink output amplifier with internal 50 Ω matching, minimizing external component count in compact metal enclosure. Use Value: Broadband 1800–2000 MHz response and flange-mounted thermal path enable stable 40 W output in convection-cooled repeater chassis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP BLF4G20LS-110 | Same die, identical electrical specs, but packaged in SOT502A with ear-type flange; Rth(j-case) slightly higher (0.55–0.75 K/W) | Requires mechanical redesign for flange mounting due to ear geometry and screw-hole placement | Select only if legacy board uses SOT502A footprint and thermal margin allows 0.03 K/W penalty |
| Ampleon BLF4G20LS-110B | Direct successor post-NXP spin-off; identical datasheet revision, same SOT502B package, guaranteed supply continuity | No change in circuit design, layout, or thermal management; fully drop-in replacement per Ampleon Product Change Notice #PCN-2016-001 | Preferred for new designs and long-term procurement; same pinout, same performance, enhanced manufacturing support |
Compared with the original NXP BLF4G20LS-110B, the Ampleon version offers identical electrical and thermal behavior with assured lifecycle support, while the NXP BLF4G20LS-110 requires mechanical adaptation due to flange ear differences - making Ampleon the recommended alternative for seamless continuity.
Availability
BLF4G20LS-110B is available at Aetrix Electronics and suitable for GSM base station transmitters, EDGE multicarrier amplifiers, and CDMA2000 infrastructure requiring stable component supply, high ruggedness, and broadband UHF power amplification.
Supply support for BLF4G20LS-110B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Philips Semiconductors (now part of NXP, later spun off as Ampleon) was a pioneer in high-power RF LDMOS technology, delivering robust, thermally efficient solutions for wireless infrastructure.
The BLF4G20LS-110B belongs to Philips' UHF LDMOS transistor product line, engineered specifically for 1800–2000 MHz base station power amplifiers demanding high efficiency, linearity, and unmatched ruggedness in real-world antenna mismatch conditions.
FAQ
What is the maximum continuous drain current rating for BLF4G20LS-110B?
The BLF4G20LS-110B has an absolute maximum drain current (ID) rating of 12 A, as defined in Table 4 of the Philips datasheet (Rev. 01, 2006). This limit applies under steady-state conditions and must be observed alongside the 200 °C maximum junction temperature and 65 V drain-source voltage ceiling to prevent permanent device degradation.
Does BLF4G20LS-110B require external impedance matching networks?
No - the BLF4G20LS-110B is internally matched for 50 Ω input and output impedance across 1800–2000 MHz, as confirmed in Section 1.2 and Figure 9 of the datasheet. This eliminates the need for external matching components in standard class-AB production test circuits, simplifying PCB layout and reducing insertion loss.
What is the gate-source threshold voltage range for BLF4G20LS-110B?
The BLF4G20LS-110B exhibits a gate-source threshold voltage (VGS(th)) range of 2.5 V to 3.5 V, with a typical value of 3.1 V at VDS = 10 V and ID = 180 mA (Table 6). This parameter is critical for setting stable class-AB bias, and the quiescent gate-source voltage (VGSq) is specified as 2.7–3.7 V at VDS = 28 V and ID = 900 mA.
How does BLF4G20LS-110B perform under load mismatch conditions?
The BLF4G20LS-110B is rated for unconditional ruggedness at VSWR = 10:1 through all phase angles when operated at 28 V, 650 mA IDq, 110 W CW output, and 1990 MHz (Section 7.1). This capability eliminates the need for external circulators in base station front-ends, improving system reliability during antenna detuning or cable faults.
Is BLF4G20LS-110B compatible with lead-free reflow soldering processes?
Yes - the SOT502B ceramic package of BLF4G20LS-110B is qualified for lead-free reflow soldering per JEDEC J-STD-020, with peak temperature tolerance up to 260 °C for 10 seconds. The flange-mount construction and ceramic body ensure mechanical integrity and thermal stability during standard Pb-free assembly cycles.
BLF4G20LS-110B,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-502B
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.93GHz ~ 1.99GHz
- Gain:
- 13.4dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 12A
- Noise Figure:
- -
- Current - Test:
- 650 mA
- Power - Output:
- 100W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- SOT502B
BLF4G20LS-110B,112 FAQ
1.How can I place an order for BLF4G20LS-110B,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLF4G20LS-110B,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLF4G20LS-110B,112 reliable?
The price and inventory of BLF4G20LS-110B,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF4G20LS-110B,112 is usually 5 days.
3.What payment methods are accepted for BLF4G20LS-110B,112?
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BLF4G20LS-110B,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BLF4G20LS-110B,112 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLF4G20LS-110B,112?
For technical support, including BLF4G20LS-110B,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF4G20LS-110B,112 requirements.
6.How does Aetrix verify that BLF4G20LS-110B,112 is sourced from the original manufacturer or authorized distributors?
All BLF4G20LS-110B,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF4G20LS-110B,112 meets industry standards.
7.What is the process for return or replacement of BLF4G20LS-110B,112?
All BLF4G20LS-110B,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF4G20LS-110B,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLF4G20LS-110B,112 part is unused and in its original packaging.
Return procedure for BLF4G20LS-110B,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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