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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLF7G10L-250,112

Name: BLF7G10L-250,112
Brand: NXP Semiconductors
SKU: BLF7G10L-250,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLF7G10L-250,112

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT-502A

Datasheet:: BLF7G10L-250,112.pdf

Description:: RF MOSFET LDMOS 30V LDMOST

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BLF7G10L-250 from NXP Semiconductors is a 250 W LDMOS RF power transistor designed for base station amplifiers operating in the 869–960 MHz band. It delivers 60 W average output power with 19.5 dB gain and 30.5% drain efficiency at 920–960 MHz under W-CDMA 2-carrier conditions, with ruggedness validated at VSWR = 10:1 in class-AB operation.

For engineers reviewing the BLF7G10L-250 datasheet, BLF7G10L-250 pinout, BLF7G10L-250 application, or BLF7G10L-250 equivalent, key selection criteria include its flanged ceramic SOT502A package, 30 V V_DS, 1800 mA quiescent drain current, integrated ESD protection, and internally matched broadband input/output impedance for W-CDMA multi-carrier base station PA design.

Technical Context

This device operates as a common-source class-AB RF power amplifier stage, optimized for wideband linear amplification of 3GPP-compliant W-CDMA signals. Its low memory effects and reduced output capacitance support high-fidelity pre-distortion in Doherty configurations.

The transistor features an internally matched 50 Ω input and output impedance across 869–960 MHz, with typical Z_S = 3.2 − j3.3 Ω and Z_L = 1.0 − j1.6 Ω at 942 MHz, enabling simplified matching network design while maintaining thermal stability via low R_th(j-c) = 0.38 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	65 V - supports safe operation at 30 V DC bias with margin against transient overvoltage
P_AV (W-CDMA)	60 W - delivers full 2-carrier W-CDMA output power at 0.01% CCDF PAR = 7.5 dB
G_p	19.5 dB - enables single-stage PA design with minimal driver gain requirement
η_D	30.5% - reduces heat dissipation and power supply load in high-duty-cycle base station operation
ACPR	−34 dBc - meets stringent spectral mask requirements for adjacent channel interference suppression
R_th(j-c)	0.38 K/W - allows direct mounting to heatsink with predictable thermal rise under 60 W CW load
V_GS(th)	1.9 V (typ) - ensures stable gate turn-on control with standard bias circuitry

Pinout & Package

BLF7G10L-250 uses the flanged ceramic SOT502A package with two mounting holes and two leads. The flange is electrically connected to the source terminal and serves as the primary thermal and RF ground path.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	High-power RF output node; requires low-inductance connection to output matching network
2	Gate	RF input control terminal; must be DC-blocked and impedance-matched to 50 Ω
3	Source	Common reference node; tied to flange for thermal conduction and RF grounding

Key Features

Feature	Design Value
Internally matched I/O	Enables direct integration into 50 Ω systems without external tuning components at 869–960 MHz
Low R_th(j-c)	0.38 K/W permits compact thermal design with case temperature ≤80 °C at 60 W output
VSWR = 10:1 ruggedness	Survives extreme load mismatch without degradation at 30 V, 1800 mA, 200 W CW in 920–960 MHz band
Low memory effects	Supports effective digital pre-distortion (DPD) for >40 dB ACLR improvement in W-CDMA base stations
Integrated ESD protection	Meets handling requirements per ANSI/ESD S20.20, eliminating need for external protection diodes

Applications

Macrocell Base Station PA	Doherty Amplifier Main Path
Use Scenario: High-efficiency final-stage RF power amplification in 869–960 MHz W-CDMA macrocell base stations supporting up to four carriers. IC Role / Device Role / Timing Role: Primary LDMOS power transistor operating in class-AB mode with 60 W average output capability. Use Value: Delivers 30.5% drain efficiency and −34 dBc ACPR to meet 3GPP spectral emission limits while minimizing cooling requirements.	Use Scenario: Main amplifier in asymmetric Doherty architecture for improved back-off efficiency in multi-carrier W-CDMA deployments. IC Role / Device Role / Timing Role: High-power, low-capacitance LDMOS transistor optimized for broadband linearity and low memory effects. Use Value: Lower output capacitance and pre-distortability enable >15% efficiency gain at 6 dB back-off versus conventional LDMOS devices.
Multi-Carrier W-CDMA Transmitter	Cellular Infrastructure Repeater
Use Scenario: Linear amplification of composite 2-carrier W-CDMA signals with 5 MHz spacing and 7.5 dB PAR in distributed antenna systems. IC Role / Device Role / Timing Role: Final-stage RF power device biased at 1800 mA IDq with 30 V VDS in production test circuit configuration. Use Value: Achieves −15.5 dB input return loss and 19.5 dB power gain across 920–960 MHz, simplifying driver stage design.	Use Scenario: Bidirectional RF power amplification in outdoor cellular repeaters covering 869–894 MHz and 920–960 MHz bands. IC Role / Device Role / Timing Role: Ruggedized LDMOS transistor capable of sustained operation under variable VSWR conditions. Use Value: Validated VSWR = 10:1 tolerance ensures reliable operation despite antenna coupling variations in repeater installations.

Macrocell Base Station PA

Doherty Amplifier Main Path

Use Scenario: High-efficiency final-stage RF power amplification in 869–960 MHz W-CDMA macrocell base stations supporting up to four carriers.

IC Role / Device Role / Timing Role: Primary LDMOS power transistor operating in class-AB mode with 60 W average output capability.

Use Value: Delivers 30.5% drain efficiency and −34 dBc ACPR to meet 3GPP spectral emission limits while minimizing cooling requirements.

Use Scenario: Main amplifier in asymmetric Doherty architecture for improved back-off efficiency in multi-carrier W-CDMA deployments.

IC Role / Device Role / Timing Role: High-power, low-capacitance LDMOS transistor optimized for broadband linearity and low memory effects.

Use Value: Lower output capacitance and pre-distortability enable >15% efficiency gain at 6 dB back-off versus conventional LDMOS devices.

Multi-Carrier W-CDMA Transmitter

Cellular Infrastructure Repeater

Use Scenario: Linear amplification of composite 2-carrier W-CDMA signals with 5 MHz spacing and 7.5 dB PAR in distributed antenna systems.

IC Role / Device Role / Timing Role: Final-stage RF power device biased at 1800 mA IDq with 30 V VDS in production test circuit configuration.

Use Value: Achieves −15.5 dB input return loss and 19.5 dB power gain across 920–960 MHz, simplifying driver stage design.

Use Scenario: Bidirectional RF power amplification in outdoor cellular repeaters covering 869–894 MHz and 920–960 MHz bands.

IC Role / Device Role / Timing Role: Ruggedized LDMOS transistor capable of sustained operation under variable VSWR conditions.

Use Value: Validated VSWR = 10:1 tolerance ensures reliable operation despite antenna coupling variations in repeater installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BLF7G10LS-250	Same die, earless flanged ceramic SOT502B package; no mounting holes; identical RF and thermal specs	Preferred for space-constrained PCB layouts where mechanical mounting via flange is not required	Select BLF7G10LS-250 when board-level mechanical anchoring is unnecessary and footprint area is limited
MRF7S18250HSR5	250 W LDMOS at 1.8–2.0 GHz; higher f_T; different biasing (V_GS(th) = 2.5 V); R_th(j-c) = 0.45 K/W	Designed for PCS/DCS bands, not 869–960 MHz; requires redesigned matching network and bias circuit	Choose only for frequency-band migration; not a drop-in replacement for BLF7G10L-250

Compared with BLF7G10L-250, BLF7G10LS-250 offers identical RF performance in a smaller footprint but lacks mechanical mounting capability, while MRF7S18250HSR5 targets a different frequency band and demands full circuit redesign-neither is pin-compatible, but both serve adjacent infrastructure amplifier needs.

Availability

BLF7G10L-250 is available at Aetrix Electronics and suitable for macrocell base station PAs, Doherty amplifier designs, multi-carrier W-CDMA transmitters, and cellular infrastructure repeaters requiring stable component supply and long-term lifecycle support.

Supply support for BLF7G10L-250 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The BLF7G10L-250 belongs to NXP's high-power LDMOS transistor product line, engineered specifically for energy-efficient, spectrally clean RF amplification in cellular infrastructure equipment operating below 1 GHz.

FAQ

What is the maximum continuous drain current rating for BLF7G10L-250?

The BLF7G10L-250 has no absolute maximum continuous drain current rating specified; instead, it is characterized at a quiescent drain current (I_Dq) of 1800 mA under typical W-CDMA operating conditions. Its safe operating area is defined by V_DS ≤ 65 V, T_j ≤ 200 °C, and thermal resistance constraints-not by a fixed I_D limit. Designers must ensure junction temperature remains within specification using the measured R_th(j-c) = 0.38 K/W and heatsink interface data.

Does BLF7G10L-250 require external gate protection diodes?

No, BLF7G10L-250 incorporates integrated ESD protection on the gate terminal, compliant with ANSI/ESD S20.20 and IEC/TS 61340-5 standards. This eliminates the need for discrete gate protection diodes in standard handling and circuit operation, provided proper PCB layout practices (e.g., short gate traces, controlled impedance routing) are followed per NXP's application guidance.

Can BLF7G10L-250 be used in pulsed RF applications?

Yes, BLF7G10L-250 is qualified for both continuous wave (CW) and pulsed RF operation. Its ruggedness validation includes VSWR = 10:1 testing under CW conditions at 200 W, and the device's thermal time constants and SOA curves support pulsed duty cycles up to 100% at rated voltage and current. Performance graphs in the datasheet include CW-pulsed gain and efficiency curves across 920–960 MHz.

What is the recommended gate bias voltage range for BLF7G10L-250?

The BLF7G10L-250 gate-source voltage (V_GS) must remain within −0.5 V to +13 V per absolute maximum ratings. For class-AB operation at I_Dq = 1800 mA and V_DS = 30 V, the typical gate bias is approximately +3.5 V, derived from its V_GS(th) = 1.9 V (typ) and transconductance characteristics. Stable bias networks should include temperature compensation to maintain quiescent current across operating temperature ranges.

Is BLF7G10L-250 RoHS compliant?

Yes, BLF7G10L-250 is compliant with Directive 2002/95/EC (RoHS), as explicitly stated in the product data sheet. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits, and conforms to NXP's environmental policy for lead-free packaging and assembly processes.

BLF7G10L-250,112 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-502A

Packaging:: Tube

Product Status:: Active

Technology:: LDMOS

Configuration:: -

Frequency:: 920MHz ~ 960MHz

Gain:: 19.5dB

Voltage - Test:: 30 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 1.8 A

Power - Output:: 60W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: LDMOST

BLF7G10L-250,112 FAQ

1.How can I place an order for BLF7G10L-250,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLF7G10L-250,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLF7G10L-250,112 reliable?

The price and inventory of BLF7G10L-250,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G10L-250,112 is usually 5 days.

3.What payment methods are accepted for BLF7G10L-250,112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF7G10L-250,112 transactions.

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4.How is shipping managed for BLF7G10L-250,112?

BLF7G10L-250,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLF7G10L-250,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLF7G10L-250,112?

For technical support, including BLF7G10L-250,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G10L-250,112 requirements.

6.How does Aetrix verify that BLF7G10L-250,112 is sourced from the original manufacturer or authorized distributors?

All BLF7G10L-250,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G10L-250,112 meets industry standards.

7.What is the process for return or replacement of BLF7G10L-250,112?

All BLF7G10L-250,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G10L-250,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLF7G10L-250,112 part is unused and in its original packaging.

Return procedure for BLF7G10L-250,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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