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NXP Semiconductors BLF7G20LS-90P,112
- Part No.:
- BLF7G20LS-90P,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-1121B
- Datasheet:
-
BLF7G20LS-90P,112.pdf
- Description:
- RF MOSFET LDMOS 28V LDMOST
- Quantity:
- Payment:
- Shipping:
Inventory:60
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Product details
Overview
BLF7G20LS-90P from NXP Semiconductors is a 90 W LDMOS power transistor designed for base station RF power amplification in the 1800–2000 MHz band, operating at 28 V drain-source voltage with 550 mA quiescent drain current and delivering 19.5 dB power gain and 41% drain efficiency in GSM EDGE mode.
For engineers reviewing the BLF7G20LS-90P datasheet, BLF7G20LS-90P pinout, BLF7G20LS-90P application, or BLF7G20LS-90P equivalent, this page provides verified thermal resistance (0.49 K/W), ruggedness under VSWR = 10:1 mismatch, low memory effects for pre-distortion linearity, internally matched broadband operation, and ESD-protected ceramic package details essential for macro-cell PA design and Doherty amplifier implementation.
Technical Context
This dual-gate, dual-drain LDMOS transistor uses a common-source Class-AB configuration optimized for multi-carrier and wideband modulation schemes including GSM EDGE, IS-95, and W-CDMA. Its low output capacitance and high transconductance (3.8 S typical) support high-efficiency Doherty architectures.
The device features integrated ESD protection and is internally matched to simplify impedance transformation across 1800–2000 MHz. Thermal stability is ensured by low junction-to-case thermal resistance (0.49 K/W at 90 W) and a maximum junction temperature rating of 200 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | 1800–2000 MHz - supports full-band LTE Band 3 and Band 1 macro-cell infrastructure deployment |
| Output Power (CW) | 84 W - enables high-power single-carrier operation with 19 dB gain and 54% efficiency at 28 V |
| Output Power (GSM EDGE) | 40 W - delivers 19.5 dB gain and 41% drain efficiency with −61 dBc ACPR at 400 kHz offset |
| Thermal Resistance Rth(j-c) | 0.49 K/W - allows sustained 90 W operation at case temperature ≤80 °C without derating |
| Drain-Source Voltage (VDS) | 65 V max - provides 2.3× safety margin over 28 V nominal rail, supporting transient surge resilience |
| Ruggedness | VSWR = 10:1 at all phases - withstands severe load mismatches in deployed base station antennas |
| Gate Threshold Voltage | 1.5–2.3 V - enables stable biasing with standard ±12 V gate drivers and low-voltage control logic |
Pinout & Package
SOT1121B earless flanged LDMOST ceramic package with 4 leads and metal flange thermally connected to pin 5 (source). Flange mounting ensures low-thermal-resistance PCB heat sinking without additional mechanical fasteners.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain 1 | Primary high-current RF power output path; paralleled with Pin 2 for full 90 W capability |
| 2 | Drain 2 | Secondary drain terminal enabling balanced layout and reduced parasitic inductance in parallel configuration |
| 3 | Gate 1 | RF input control terminal for first transistor section; requires external DC blocking and matching network |
| 4 | Gate 2 | RF input control terminal for second transistor section; independently configurable for Doherty carrier/peaking alignment |
| 5 | Source | Common source node and thermal flange connection; must be soldered directly to large copper pour for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched broadband operation | Eliminates external input/output matching networks for 1800–2000 MHz, reducing BOM count and layout complexity |
| Low memory effects | Enables effective digital pre-distortion (DPD) correction, achieving 2.5% RMS EVM in EDGE and <−74 dBc ACPR in W-CDMA |
| Lower output capacitance | Improves peaking amplifier efficiency and bandwidth in Doherty configurations, increasing overall PA efficiency by ≥5% |
| Integrated ESD protection | Withstands human-body-model (HBM) ESD events up to ±2 kV without external protection circuitry |
| RoHS compliance | Fully compliant with Directive 2002/95/EC, enabling unrestricted use in EU telecommunications infrastructure |
Applications
| Macro-Cell Base Station PA | Doherty Power Amplifier |
|---|---|
Use Scenario: High-power RF final stage in 4G LTE macro-cell base stations operating in Band 3 (1800 MHz) and Band 1 (2100 MHz) with multi-carrier signals. IC Role / Device Role / Timing Role: Primary RF power transistor delivering 40–90 W average output in Class-AB or Doherty topology. Use Value: Delivers 41% drain efficiency at 40 W EDGE and withstands VSWR = 10:1 mismatches, ensuring field reliability in outdoor antenna deployments. | Use Scenario: Peaking amplifier in asymmetric Doherty architecture for improved efficiency at back-off power levels in 5G NR base stations. IC Role / Device Role / Timing Role: Secondary high-efficiency transistor activated above 6 dB PAPR threshold to boost overall PA efficiency. Use Value: Low output capacitance and low memory effects enable precise timing alignment with carrier amplifier, achieving >45% average efficiency at 8 dB PAPR. |
| GSM/EDGE Infrastructure | W-CDMA Transmitter Module |
Use Scenario: Final-stage PA in legacy GSM/EDGE base transceiver stations (BTS) requiring high spectral purity and linear amplification. IC Role / Device Role / Timing Role: Linear RF power transistor operating in Class-AB with digital pre-distortion feedback loop. Use Value: Achieves −61 dBc ACPR at 400 kHz and 2.5% RMS EVM, meeting 3GPP TS 45.005 spectral mask requirements. | Use Scenario: Single-carrier W-CDMA transmitter in Node B equipment for 3G UMTS networks operating at 1880 MHz. IC Role / Device Role / Timing Role: High-linearity RF power device supporting test model 1 (64 DPCH) with 7.2 dB PAR. Use Value: Delivers −52 dBc ACPR at 5 MHz offset and maintains <12.5% peak EVM, satisfying 3GPP TS 25.104 conformance testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLF7G20L-90P | Flanged package (SOT1121A) with two mounting holes; identical electrical specs and thermal resistance | Requires mechanical screws for heatsink attachment; preferred for high-vibration environments | Select when board-level mechanical stability under shock/vibration is critical; same RF performance and biasing |
| MRF7S18120HR3 | 120 W GaN HEMT; higher gain (20.5 dB), wider bandwidth (1805–1880 MHz only), higher VDS (50 V) | Higher efficiency (>55%) but requires more complex gate bias sequencing and thermal interface design | Choose for next-gen upgrades where power density and efficiency outweigh cost and design complexity |
Compared with BLF7G20LS-90P, BLF7G20L-90P offers identical RF performance with enhanced mechanical mounting, while MRF7S18120HR3 delivers higher power and efficiency at the cost of increased bias complexity and narrower frequency coverage-making BLF7G20LS-90P optimal for cost-sensitive, thermally constrained macro-cell PA designs requiring broad 1800–2000 MHz support.
Availability
BLF7G20LS-90P is available at Aetrix Electronics and suitable for macro-cell base station RF power amplifiers, Doherty transmitter modules, GSM/EDGE infrastructure systems, and W-CDMA Node B equipment requiring stable component supply across multi-year telecom deployments.
Supply support for BLF7G20LS-90P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology and cellular infrastructure.
The BLF7G20LS-90P belongs to NXP's LDMOS power transistor product line, engineered specifically for high-efficiency, high-reliability RF power amplification in 3G/4G base station applications from 1800 MHz to 2000 MHz.
FAQ
What is the maximum continuous RF output power of the BLF7G20LS-90P?
The BLF7G20LS-90P delivers 84 W average RF output power in CW mode at 28 V, 550 mA, and 25 °C case temperature. Its rated 90 W capability reflects peak envelope power handling under pulsed or modulated conditions per NXP's ruggedness validation at VSWR = 10:1.
Does the BLF7G20LS-90P require external matching networks?
No-the BLF7G20LS-90P is internally matched for 1800–2000 MHz operation, eliminating the need for external input/output matching components in standard Class-AB test circuits. However, system-level harmonic filtering and bias decoupling remain necessary per Figure 12 in the datasheet.
How does the BLF7G20LS-90P support Doherty amplifier designs?
The BLF7G20LS-90P supports Doherty topologies via its lower output capacitance and low memory effects, enabling precise carrier-peaking timing alignment and efficient back-off operation. Its dual-gate/dual-drain structure allows independent biasing of carrier and peaking paths in asymmetric configurations.
What is the thermal resistance (Rth(j-c)) of the BLF7G20LS-90P and how is it measured?
The BLF7G20LS-90P has a typical junction-to-case thermal resistance of 0.49 K/W, measured at Tcase = 80 °C and PL = 90 W in a production test setup. This value assumes direct soldering of the flange (Pin 5) to a thermally optimized PCB copper plane with ≥4 oz copper thickness.
Is the BLF7G20LS-90P RoHS compliant and lead-free?
Yes-the BLF7G20LS-90P complies with Directive 2002/95/EC (RoHS) and is manufactured using lead-free assembly processes. The SOT1121B package contains no intentionally added lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE per NXP's material declarations.
BLF7G20LS-90P,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-1121B
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- Dual, Common Source
- Frequency:
- 2.11GHz ~ 2.17GHz
- Gain:
- 19.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 2µA
- Noise Figure:
- -
- Current - Test:
- 550 mA
- Power - Output:
- 90W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LDMOST
BLF7G20LS-90P,112 FAQ
1.How can I place an order for BLF7G20LS-90P,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLF7G20LS-90P,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLF7G20LS-90P,112 reliable?
The price and inventory of BLF7G20LS-90P,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G20LS-90P,112 is usually 5 days.
3.What payment methods are accepted for BLF7G20LS-90P,112?
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BLF7G20LS-90P,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BLF7G20LS-90P,112 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLF7G20LS-90P,112?
For technical support, including BLF7G20LS-90P,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G20LS-90P,112 requirements.
6.How does Aetrix verify that BLF7G20LS-90P,112 is sourced from the original manufacturer or authorized distributors?
All BLF7G20LS-90P,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G20LS-90P,112 meets industry standards.
7.What is the process for return or replacement of BLF7G20LS-90P,112?
All BLF7G20LS-90P,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G20LS-90P,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLF7G20LS-90P,112 part is unused and in its original packaging.
Return procedure for BLF7G20LS-90P,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BLF7G20LS-90P,112 Tags
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