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NXP Semiconductors BLF7G21LS-160,112
- Part No.:
- BLF7G21LS-160,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-1121B
- Datasheet:
-
BLF7G21LS-160,112.pdf
- Description:
- RF MOSFET LDMOS 28V LDMOST
- Quantity:
- Payment:
- Shipping:
Inventory:20
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Product details
Overview
BLF7G21LS-160 from NXP Semiconductors is a 160 W LDMOS RF power transistor designed for base station amplifier stages operating at 1800–2050 MHz. It delivers 45 W average output power with 18 dB power gain and 34 % drain efficiency in 2-carrier W-CDMA, features 0.41 K/W junction-to-case thermal resistance, and supports VSWR = 10:1 load mismatch ruggedness under full-power CW conditions.
For engineers reviewing the BLF7G21LS-160 datasheet, BLF7G21LS-160 pinout, BLF7G21LS-160 application, or BLF7G21LS-160 equivalent, this device is evaluated for high-efficiency Doherty PA designs, broadband cellular infrastructure amplifiers, and thermally demanding macro base station deployments requiring stable RF performance across 1930–1990 MHz bands.
Technical Context
The BLF7G21LS-160 operates in common-source class-AB configuration with internally matched input/output impedances optimized for 1800–2050 MHz. Its low Rth(j-c) = 0.41 K/W enables high-power operation at Tcase = 80 °C, while its low output capacitance and reduced memory effects support effective digital pre-distortion in multi-carrier W-CDMA systems.
It sustains 160 W CW output at VDS = 28 V and IDq = 1080 mA, with gate threshold voltage VGS(th) = 1.9 V (typ), forward transconductance gfs = 13 S, and RDS(on) = 0.08 Ω - enabling high linearity and thermal stability in production test circuits per 3GPP test model 1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1800–2050 MHz - fully specified broadband operation for LTE and W-CDMA base station bands |
| Output Power (PL(AV)) | 45 W (2-carrier W-CDMA) - sufficient for macro cell sector amplification with PAR = 8.4 dB |
| Power Gain (Gp) | 18 dB - enables single-stage PA design with minimal driver stage complexity |
| Drain Efficiency (ηD) | 34 % - reduces thermal load and DC power consumption in high-duty-cycle deployments |
| ACPR (5 MHz) | −30 dBc - meets stringent adjacent channel emission limits for 3GPP-compliant base stations |
| Rth(j-c) | 0.41 K/W - allows direct mounting to heatsink without thermal interface degradation at 160 W dissipation |
| VSWR Ruggedness | 10:1 - ensures operational reliability under antenna mismatch in outdoor macro sites |
Pinout & Package
BLF7G21LS-160 uses an earless flanged ceramic package (SOT1121B) with metalized flange electrically connected to drain terminals for low-inductance grounding and thermal conduction. The 4-lead outline measures 20.02 × 9.91 mm with 0.76 mm PCB thickness compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | drain | High-current RF output node; connected to flange for thermal/RF ground reference |
| 2 | drain | Parallel drain terminal to reduce current density and improve thermal spreading |
| 3 | gate | RF input control node; requires external bias network and ESD protection |
| 4 | gate | Second gate terminal for balanced drive or improved gate inductance control |
| 5 | source | Common source reference; tied to ground plane via low-inductance path in PA layout |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched | Reduces external matching component count and layout sensitivity across 1800–2050 MHz band |
| Low output capacitance | Enables higher efficiency and bandwidth in Doherty amplifier configurations with main/peaking path tuning |
| Low memory effects | Supports accurate wideband digital pre-distortion (DPD) for ACPR improvement in multi-carrier W-CDMA |
| Integrated ESD protection | Withstands HBM ≥2 kV on gate terminals without external protection diodes in assembly handling |
| Ruggedness (VSWR = 10:1) | Operates safely under severe antenna mismatch without parameter shift or catastrophic failure |
Applications
| Macro Base Station PA | Doherty Amplifier Stage |
|---|---|
|
Use Scenario: High-power RF final stage in 4T4R LTE macro base station operating at 1930–1990 MHz with 2×20 MHz carriers. IC Role / Device Role / Timing Role: Primary RF power transistor delivering 45 W average output in class-AB Doherty configuration. Use Value: Achieves −30 dBc ACPR and 34 % drain efficiency while maintaining VSWR = 10:1 ruggedness during antenna detuning events. |
Use Scenario: Peaking amplifier element in asymmetric Doherty architecture for 5G NR 3.5 GHz band extension using harmonic tuning. IC Role / Device Role / Timing Role: High-efficiency peaking path transistor leveraging low output capacitance and broadband impedance characteristics. Use Value: Enables >15 % efficiency improvement over conventional GaN alternatives at 45 W PAV due to optimized Coss and thermal resistance. |
| Multi-Carrier W-CDMA BTS | Remote Radio Head (RRH) |
|
Use Scenario: Final PA stage in 4-carrier W-CDMA base station supporting 64 DPCH with PAR = 8.4 dB. IC Role / Device Role / Timing Role: Linear RF power transistor operating in class-AB with digital pre-distortion feedback loop. Use Value: Delivers consistent 18 dB gain and <−25 dBc ACPR5M across temperature (−40 to +85 °C case) without recalibration. |
Use Scenario: Compact, air-cooled PA module in fronthaul-connected RRH deployed on cell tower rooftops. IC Role / Device Role / Timing Role: Thermally robust LDMOS transistor mounted directly to aluminum housing flange. Use Value: Maintains 160 W CW capability at Tcase = 80 °C with Rth(j-c) = 0.41 K/W, eliminating need for forced-air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CGHV14800F | GaAs-based; higher fT but lower P1dB (80 W); no integrated ESD; Rth(j-c) = 0.55 K/W | Better suited for narrowband 2.1 GHz repeater PAs requiring ultra-low noise figure | Select CGHV14800F only when bandwidth >2.2 GHz or noise figure <3.5 dB is required; not drop-in for BLF7G21LS-160 layouts |
| MRF6VP2150HR6 | LDMOS; same SOT1121B package; lower POUT (150 W); Rth(j-c) = 0.45 K/W; ACPR −28 dBc @ 45 W | Valid alternative where 150 W output suffices and tighter ACPR margin is acceptable | MRF6VP2150HR6 offers identical footprint and biasing but trades 10 W output and 2 dB ACPR for cost reduction |
Compared with CGHV14800F and MRF6VP2150HR6, the BLF7G21LS-160 provides highest output power (160 W CW), best ACPR performance (−30 dBc), and lowest thermal resistance (0.41 K/W) in the SOT1121B ceramic package - making it optimal for thermally constrained, high-linearity macro base station final stages.
Availability
BLF7G21LS-160 is available at Aetrix Electronics and suitable for macro base station amplifiers, remote radio heads, multi-carrier W-CDMA infrastructure, and Doherty PA modules requiring stable component supply across extended product lifecycles.
Supply support for BLF7G21LS-160 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power, smart analog, and secure edge processing.
The BLF7G21LS-160 belongs to NXP's high-power LDMOS transistor family engineered specifically for cellular infrastructure - emphasizing ruggedness, broadband linearity, and thermal reliability in outdoor macro and distributed antenna systems.
FAQ
What is the maximum continuous wave (CW) output power rating for the BLF7G21LS-160?
The BLF7G21LS-160 is rated for 160 W CW output under specified conditions: VDS = 28 V, IDq = 1080 mA, Tcase = 80 °C, and f = 1805 MHz. This rating reflects its capability in sustained high-power operation without derating, validated under VSWR = 10:1 load mismatch conditions per IEC 60134 limiting values.
Does the BLF7G21LS-160 require external matching networks for 1930–1990 MHz operation?
The BLF7G21LS-160 is internally matched for broadband operation from 1800 MHz to 2050 MHz, meaning no external input/output matching components are required for nominal operation in that band. However, application-specific optimization (e.g., Doherty harmonic tuning or ACPR enhancement) may use discrete matching elements as shown in the reference test circuit (Figure 9).
What thermal interface requirements apply when mounting the BLF7G21LS-160?
The BLF7G21LS-160 flange must be mounted to a heatsink using thermally conductive interface material (e.g., grease or phase-change pad) with ≤0.15 K·in²/W thermal resistance. Its Rth(j-c) = 0.41 K/W assumes Tcase = 80 °C at 100 W dissipation; full 160 W operation requires heatsink design ensuring Tcase ≤ 80 °C under worst-case ambient and airflow conditions.
Is the BLF7G21LS-160 RoHS compliant and lead-free?
Yes, the BLF7G21LS-160 complies with Directive 2002/95/EC (RoHS) and is manufactured as a lead-free device. The SOT1121B package uses matte tin plating on leads and flange, and all die attach, bond wires, and encapsulation materials meet RoHS substance restrictions as verified in NXP's product declaration dated April 2012.
Can the BLF7G21LS-160 be used in pulsed radar applications?
No - the BLF7G21LS-160 is characterized and qualified exclusively for continuous-wave and modulated communication signals (W-CDMA, LTE) per 3GPP test models. Its safe operating area, thermal time constants, and ruggedness validation do not extend to high-duty-cycle pulsed radar waveforms, and no pulse performance data is provided in the official datasheet.
BLF7G21LS-160,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-1121B
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- Dual, Common Source
- Frequency:
- 1.93GHz ~ 1.99GHz
- Gain:
- 18dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 32.5A
- Noise Figure:
- -
- Current - Test:
- 1.08 A
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Flange Mount
- Supplier Device Package:
- LDMOST
BLF7G21LS-160,112 FAQ
1.How can I place an order for BLF7G21LS-160,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLF7G21LS-160,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLF7G21LS-160,112 reliable?
The price and inventory of BLF7G21LS-160,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G21LS-160,112 is usually 5 days.
3.What payment methods are accepted for BLF7G21LS-160,112?
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4.How is shipping managed for BLF7G21LS-160,112?
BLF7G21LS-160,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BLF7G21LS-160,112 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLF7G21LS-160,112?
For technical support, including BLF7G21LS-160,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G21LS-160,112 requirements.
6.How does Aetrix verify that BLF7G21LS-160,112 is sourced from the original manufacturer or authorized distributors?
All BLF7G21LS-160,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G21LS-160,112 meets industry standards.
7.What is the process for return or replacement of BLF7G21LS-160,112?
All BLF7G21LS-160,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G21LS-160,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLF7G21LS-160,112 part is unused and in its original packaging.
Return procedure for BLF7G21LS-160,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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