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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLF7G24L-100,112

Name: BLF7G24L-100,112
Brand: NXP Semiconductors
SKU: BLF7G24L-100,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLF7G24L-100,112

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT-502A

Datasheet:: BLF7G24L-100,112.pdf

Description:: RF MOSFET LDMOS 28V SOT502A

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BLF7G24L-100 from NXP Semiconductors is a 100 W LDMOS RF power transistor designed for base station amplifiers operating at 2300–2400 MHz. It delivers 30 W average output power in W-CDMA, achieves 18.7 dB power gain and 33 % drain efficiency under 28 V, 900 mA bias, and supports rugged 10:1 VSWR load mismatch tolerance.

For engineers reviewing the BLF7G24L-100 datasheet, BLF7G24L-100 pinout, BLF7G24L-100 application, or BLF7G24L-100 equivalent, this device is selected for high-efficiency, thermally stable, digitally pre-distortable RF power stages in multi-carrier cellular infrastructure where linearity (ACPR −40 dBc @ 5 MHz), ruggedness, and internal impedance matching are critical.

Technical Context

The BLF7G24L-100 operates in common-source class-AB configuration with fixed 28 V drain supply and 900 mA quiescent drain current. Its internally matched input and output enable direct integration into 50 Ω systems without external matching networks across 2300–2400 MHz.

It features low thermal resistance (R_th(j-c) = 0.3 K/W) for stable junction temperature control at 100 W CW operation, and is optimized for low memory effects to support effective digital pre-distortion in wideband CDMA and OFDMA signals with PAR up to 9.7 dB.

Key Specifications

Parameter	Value and Actual Design Meaning
f_operating	2300–2400 MHz - Full-band operation in B40 TDD-LTE and 3GPP W-CDMA 2.4 GHz band.
P_L(AV)	30 W - Sustained average RF output power in single-carrier W-CDMA test model 1 (64 DPCH).
G_p	18.7 dB - Small-signal to large-signal power gain enabling compact driver-stage architecture.
η_D	33 % - Drain efficiency at rated output, reducing heat sink requirements and DC power consumption.
ACPR_5M	−40 dBc - Adjacent channel power ratio at 5 MHz offset, meeting 3GPP spectral mask requirements.
R_th(j-c)	0.3 K/W - Thermal resistance from junction to case, supporting reliable 100 W CW operation at T_case = 80 °C.
V_DS(max)	65 V - Absolute maximum drain-source voltage, enabling safe operation with 28 V supply and transient spikes.

Pinout & Package

BLF7G24L-100 uses the flanged ceramic SOT502A package with two mounting holes and three terminals: drain (pin 1), gate (pin 2), and source (pin 3). The flange is electrically connected to the source terminal and serves as the primary thermal and RF ground path.

Pin/Terminal	Circuit Role	Design Meaning
1 - Drain	RF power output node	High-current, high-voltage terminal delivering amplified RF energy; requires low-inductance connection to output matching network.
2 - Gate	RF signal input control node	High-impedance control terminal; biased at +1.8 V threshold; requires stable DC feed and RF decoupling.
3 - Source	Common reference and thermal path	Internally tied to flange; provides RF ground return and primary thermal conduction path to heatsink.

Key Features

Feature	Design Value
Internally matched	Enables direct 50 Ω system integration without discrete input/output matching components, reducing board area and tuning complexity.
Low R_th(j-c) = 0.3 K/W	Permits sustained 100 W CW operation at 80 °C case temperature, minimizing heatsink size and cost in macro base station PA modules.
Ruggedness: VSWR = 10:1	Withstands extreme load mismatches at full power (28 V, 100 W CW, 2300 MHz) without degradation-critical for antenna system fault tolerance.
Low memory effects	Supports high-fidelity digital pre-distortion (DPD) correction in wideband signals (e.g., 3.84 MHz W-CDMA), improving ACLR and spectral efficiency.
Integrated ESD protection	Protects gate oxide during handling and assembly; eliminates need for external ESD diodes in production lines.

Applications

Macro Base Station PA	Small Cell Remote Radio Head
Use Scenario: High-power final stage in 2.4 GHz TDD-LTE base station transceivers supporting 20 MHz channels and 64-QAM modulation. IC Role / Device Role / Timing Role: RF power transistor delivering 30 W average output with 33 % efficiency and −40 dBc ACPR at 5 MHz offset. Use Value: Enables single-device final stage design with reduced thermal management burden and no external matching, lowering BOM count and calibration time.	Use Scenario: Compact, air-cooled PA module in outdoor small cell deployments requiring high linearity and reliability in limited space. IC Role / Device Role / Timing Role: Class-AB LDMOS transistor operating at 28 V, 900 mA bias to deliver 20 W IS-95 output with −46 dBc ACPR at 885 kHz. Use Value: Delivers rugged 10:1 VSWR tolerance and low memory effects-enabling robust DPD convergence in constrained thermal environments.
Multi-Carrier Amplifier	3GPP Test Bench Reference
Use Scenario: Linearized amplifier for 4-carrier W-CDMA signals in lab validation and field-deployed distributed antenna systems (DAS). IC Role / Device Role / Timing Role: Main power device biased for high-efficiency, low-ACPR operation across 2300–2400 MHz with PAR = 7.2 dB. Use Value: Achieves consistent −40 dBc ACPR at 5 MHz while maintaining >30 % efficiency-reducing cooling needs and power supply sizing.	Use Scenario: Calibration and verification unit in 3GPP-compliant conformance test setups for base station RF performance validation. IC Role / Device Role / Timing Role: Reference LDMOS transistor used to establish baseline ACPR, gain flatness, and efficiency metrics per TS 25.104. Use Value: Provides traceable, repeatable RF performance (18.7 dB G_p, 33 % η_D) across temperature and frequency-supporting metrology-grade test repeatability.

Macro Base Station PA

Small Cell Remote Radio Head

Use Scenario: High-power final stage in 2.4 GHz TDD-LTE base station transceivers supporting 20 MHz channels and 64-QAM modulation.

IC Role / Device Role / Timing Role: RF power transistor delivering 30 W average output with 33 % efficiency and −40 dBc ACPR at 5 MHz offset.

Use Value: Enables single-device final stage design with reduced thermal management burden and no external matching, lowering BOM count and calibration time.

Use Scenario: Compact, air-cooled PA module in outdoor small cell deployments requiring high linearity and reliability in limited space.

IC Role / Device Role / Timing Role: Class-AB LDMOS transistor operating at 28 V, 900 mA bias to deliver 20 W IS-95 output with −46 dBc ACPR at 885 kHz.

Use Value: Delivers rugged 10:1 VSWR tolerance and low memory effects-enabling robust DPD convergence in constrained thermal environments.

Multi-Carrier Amplifier

3GPP Test Bench Reference

Use Scenario: Linearized amplifier for 4-carrier W-CDMA signals in lab validation and field-deployed distributed antenna systems (DAS).

IC Role / Device Role / Timing Role: Main power device biased for high-efficiency, low-ACPR operation across 2300–2400 MHz with PAR = 7.2 dB.

Use Value: Achieves consistent −40 dBc ACPR at 5 MHz while maintaining >30 % efficiency-reducing cooling needs and power supply sizing.

Use Scenario: Calibration and verification unit in 3GPP-compliant conformance test setups for base station RF performance validation.

IC Role / Device Role / Timing Role: Reference LDMOS transistor used to establish baseline ACPR, gain flatness, and efficiency metrics per TS 25.104.

Use Value: Provides traceable, repeatable RF performance (18.7 dB G_p, 33 % η_D) across temperature and frequency-supporting metrology-grade test repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BLF7G24LS-100	Same die, earless flanged SOT502B package; no mounting holes; identical RF/thermal specs.	Suitable for PCB-mounted PAs without mechanical flange anchoring; lower profile but reduced thermal mass.	Select BLF7G24LS-100 when board-level mechanical retention replaces screw-mounting and thermal interface is optimized via soldered flange.
CGHV1J005S	Gallium nitride HEMT; higher gain (20 dB), wider bandwidth (1.8–2.7 GHz), but requires external matching and gate bias sequencing.	Better suited for wideband multi-band PAs; not drop-in due to different biasing, layout, and thermal interface requirements.	Choose CGHV1J005S only when upgrading to GaN for extended frequency coverage or higher efficiency beyond 33 %, accepting redesign effort.

Compared with BLF7G24L-100, BLF7G24LS-100 offers identical electrical performance in a mechanically simplified package, while CGHV1J005S provides broader bandwidth and higher gain at the cost of increased design complexity and loss of internal matching-making BLF7G24L-100 optimal for rapid, thermally robust 2.4 GHz base station PA deployment.

Availability

BLF7G24L-100 is available at Aetrix Electronics and suitable for macro base station power amplifiers, small cell remote radio heads, and multi-carrier DAS applications requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for BLF7G24L-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.

The BLF7G24L-100 belongs to NXP's high-power LDMOS transistor family engineered specifically for cellular infrastructure-emphasizing ruggedness, thermal stability, and digital pre-distortion readiness in 2–2.7 GHz bands.

FAQ

What is the maximum continuous wave (CW) output power rating for BLF7G24L-100?

The BLF7G24L-100 is rated for 100 W CW output power under specified thermal conditions (T_case = 80 °C, V_DS = 28 V). This rating reflects its capability in pulsed or saturated operation, while typical linear applications (e.g., W-CDMA) use 30 W average power to meet linearity and efficiency targets.

Does BLF7G24L-100 require external input/output matching networks?

No, the BLF7G24L-100 is internally matched for 50 Ω operation across 2300–2400 MHz. Its design eliminates the need for external matching components in standard base station PA layouts, simplifying PCB design and reducing insertion loss and tuning sensitivity.

What is the thermal resistance (R_th(j-c)) of BLF7G24L-100, and how does it impact heatsink selection?

The BLF7G24L-100 has a typical R_th(j-c) of 0.3 K/W. At 100 W CW dissipation and 80 °C case temperature, this results in ~110 °C junction rise-requiring a heatsink capable of maintaining T_case ≤ 80 °C under ambient and airflow constraints. Lower R_th(c-a) heatsinks directly improve reliability margin.

Is BLF7G24L-100 suitable for 3GPP LTE TDD applications in Band 40?

Yes, BLF7G24L-100 is explicitly characterized for 2300–2400 MHz operation and meets key 3GPP Band 40 requirements: it delivers 30 W average power with −40 dBc ACPR at 5 MHz offset and 33 % drain efficiency in W-CDMA test model 1-directly transferable to TDD-LTE 20 MHz channel operation with appropriate DPD.

How does the ruggedness specification of BLF7G24L-100 benefit real-world base station deployment?

The BLF7G24L-100 sustains 10:1 VSWR at all phase angles under full 100 W CW load mismatch (28 V, 2300 MHz), preventing failure during antenna faults, cable damage, or connector corrosion-significantly increasing field reliability and reducing maintenance downtime in unattended macro sites.

BLF7G24L-100,112 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-502A

Packaging:: Tube

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 2.3GHz ~ 2.4GHz

Gain:: 18dB

Voltage - Test:: 28 V

Current Rating (Amps):: 28A

Noise Figure:: -

Current - Test:: 900 mA

Power - Output:: 20W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: SOT502A

BLF7G24L-100,112 FAQ

1.How can I place an order for BLF7G24L-100,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLF7G24L-100,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLF7G24L-100,112 reliable?

The price and inventory of BLF7G24L-100,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G24L-100,112 is usually 5 days.

3.What payment methods are accepted for BLF7G24L-100,112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF7G24L-100,112 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BLF7G24L-100,112?

BLF7G24L-100,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLF7G24L-100,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLF7G24L-100,112?

For technical support, including BLF7G24L-100,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G24L-100,112 requirements.

6.How does Aetrix verify that BLF7G24L-100,112 is sourced from the original manufacturer or authorized distributors?

All BLF7G24L-100,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G24L-100,112 meets industry standards.

7.What is the process for return or replacement of BLF7G24L-100,112?

All BLF7G24L-100,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G24L-100,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLF7G24L-100,112 part is unused and in its original packaging.

Return procedure for BLF7G24L-100,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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