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NXP Semiconductors BLF7G24L-160P,112
- Part No.:
- BLF7G24L-160P,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-539A
- Datasheet:
-
BLF7G24L-160P,112.pdf
- Description:
- RF MOSFET LDMOS 28V SOT539A
- Quantity:
- Payment:
- Shipping:
Inventory:10
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Product details
Overview
BLF7G24L-160P from NXP Semiconductors is a 160 W LDMOS RF power transistor designed for base station amplifiers operating at 2300–2400 MHz. It delivers 30 W average RF output with 18.5 dB power gain and 27.5% drain efficiency under IS-95 modulation, featuring rugged VSWR = 10:1 load mismatch tolerance and integrated ESD protection.
For engineers reviewing the BLF7G24L-160P datasheet, BLF7G24L-160P pinout, BLF7G24L-160P application, or BLF7G24L-160P equivalent, this device is selected for high-efficiency, broadband Doherty PA stages in 4G LTE infrastructure where thermal stability, pre-distortability, and low memory effects are critical.
Technical Context
The BLF7G24L-160P operates in common-source class-AB configuration with VDS = 28 V and IDq = 1200 mA. Its internally matched design targets 2300–2400 MHz band operation using a flanged balanced ceramic SOT539A package with dual drain and dual gate terminals for push-pull or Doherty configurations.
It exhibits low Rth(j-c) = 0.2 K/W for thermal management at high power, and its low output capacitance and optimized gate structure reduce memory effects-enabling effective digital predistortion (DPD) in multi-carrier WCDMA and LTE systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2300–2400 MHz - Fully specified performance across entire band for 4G base station deployment. |
| Output Power (PL(AV)) | 30 W - Verified average RF output under IS-95 signal with 9.7 dB PAR at 0.01% CCDF probability. |
| Power Gain (Gp) | 18.5 dB - Measured at 30 W output; enables reduced driver stage complexity in macro-cell PA designs. |
| Drain Efficiency (ηD) | 27.5% - Achieved at 30 W output; reduces heat dissipation and power supply burden in continuous-wave and modulated operation. |
| ACPR (885 kHz) | −45.5 dBc - Confirmed linearity metric for IS-95 signals; supports spectral mask compliance without excessive filtering. |
| Rth(j-c) | 0.2 K/W - Enables stable junction temperature control at Tcase = 80 °C during 30 W operation. |
| VBR(DSS) | 65 V - Absolute maximum drain-source breakdown voltage; supports safe operation under transient overvoltage conditions. |
Pinout & Package
BLF7G24L-160P uses the flanged balanced ceramic SOT539A package with two mounting holes and four leads. The flange is electrically connected to the source terminal and serves as the primary thermal path and RF ground reference.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain 1 | Primary high-current RF output node; used in parallel or push-pull configurations with Pin 2. |
| 2 | Drain 2 | Secondary high-current RF output node; enables symmetrical current sharing and improved thermal distribution. |
| 3 | Gate 1 | RF input control terminal for first transistor section; requires external DC bias and RF matching network. |
| 4 | Gate 2 | RF input control terminal for second transistor section; independently configurable for Doherty carrier/peaking alignment. |
| 5 | Source | Common source node tied to flange; provides low-inductance RF ground and primary thermal conduction path to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched | Reduces external matching component count and layout sensitivity across 2300–2400 MHz band. |
| Low Rth(j-c) | 0.2 K/W enables compact thermal design with standard heatsinks at 30 W output. |
| Low memory effects | Supports high-fidelity digital predistortion (DPD) for >30 MHz signal bandwidths in LTE-A deployments. |
| ESD protection | Integrated on-chip protection meets HBM Class 2 (≥2 kV), reducing system-level ESD design overhead. |
| Ruggedness | Withstands VSWR = 10:1 at all phase angles under full 160 W pulsed load, ensuring field reliability in antenna mismatch events. |
Applications
| Macro-Cell Base Station PA | Doherty Amplifier Stage |
|---|---|
Use Scenario: High-power RF final stage in 4G LTE eNodeB operating in 2300–2400 MHz band with multi-carrier signals. IC Role / Device Role / Timing Role: Main RF power transistor delivering 30 W average output in class-AB mode with DPD linearization. Use Value: Delivers −45.5 dBc ACPR at 30 W while maintaining 27.5% efficiency-reducing cooling requirements and AC power draw per sector. |
Use Scenario: Peaking amplifier in asymmetric Doherty architecture for 20 MHz LTE signals with high PAR. IC Role / Device Role / Timing Role: Secondary LDMOS transistor biased near pinch-off, activated only during signal peaks. Use Value: Lower output capacitance and optimized gate structure improve peaking-to-carrier timing alignment and bandwidth extension beyond 2400 MHz. |
| WCDMA BTS Transmitter | IS-95 CDMA Infrastructure |
Use Scenario: Final PA stage in WCDMA base transceiver station supporting up to 64 simultaneous users per sector. IC Role / Device Role / Timing Role: High-linearity RF power device operating at 2350 MHz center frequency with 5 MHz channel bandwidth. Use Value: Low memory effects enable stable DPD convergence across temperature and aging, sustaining ACLR > 65 dBc over product lifetime. |
Use Scenario: RF power amplifier in legacy IS-95 CDMA base stations with pilot, paging, sync, and six traffic channels (Walsh codes 8–13). IC Role / Device Role / Timing Role: Single-carrier LDMOS transistor delivering 30 W average power at 9.7 dB PAR (0.01% CCDF). Use Value: Verified −45.5 dBc adjacent-channel power ratio ensures compliance with IS-95 spectral masks without additional filtering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLF7G24LS-160P | Same die, earless flanged SOT539B package - no mounting holes; lower mechanical rigidity and slightly higher Rth(j-c). | Suitable for compact, vibration-isolated modules where flange mounting is impractical. | Select BLF7G24LS-160P only when board space constraints prohibit two-hole flange attachment and thermal margin allows. |
| MRF7S24160H | 160 W LDMOS from NXP (legacy part); wider bandwidth (2110–2690 MHz), higher Rth(j-c) = 0.25 K/W, no integrated ESD diodes. | Broadband macro-cell use across multiple bands including B41 TDD-LTE, but requires external ESD protection. | Choose MRF7S24160H only when multi-band coverage (e.g., 2.3–2.7 GHz) outweighs need for integrated ESD and tighter thermal resistance. |
Compared with BLF7G24LS-160P, the BLF7G24L-160P offers superior thermal anchoring and mechanical stability via its two-hole flange; versus MRF7S24160H, it trades bandwidth for enhanced linearity, ruggedness, and integrated protection in the dedicated 2300–2400 MHz band.
Availability
BLF7G24L-160P is available at Aetrix Electronics and suitable for macro-cell base station transmitters, Doherty amplifier modules, and IS-95/WCDMA infrastructure requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for BLF7G24L-160P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance RF power solutions for wireless infrastructure and automotive radar.
The BLF7G24L-160P belongs to NXP's high-efficiency LDMOS transistor family engineered specifically for 4G/LTE base station power amplifiers operating in licensed sub-3 GHz bands with stringent linearity and thermal demands.
FAQ
What is the maximum continuous RF output power of the BLF7G24L-160P?
The BLF7G24L-160P is rated for 160 W peak RF output power, but its typical continuous-wave (CW) and modulated operating point is 30 W average output under IS-95 test conditions (28 V, 1200 mA quiescent current, 2300–2400 MHz). Sustained operation above 30 W average requires careful thermal design and derating per the datasheet's thermal characteristics table.
Does the BLF7G24L-160P require external matching networks?
Yes, the BLF7G24L-160P is internally matched for ease of use-but only at the transistor die level. External input and output matching networks are required to achieve optimal gain, efficiency, and return loss across 2300–2400 MHz. The datasheet provides typical ZS and ZL impedance values (e.g., 2.5 − j5.9 Ω at 2300 MHz) to guide matching circuit design.
How does the BLF7G24L-160P handle load mismatches in real-world base station deployments?
The BLF7G24L-160P is characterized for ruggedness under VSWR = 10:1 at all phase angles while delivering 160 W peak power at 2300 MHz, 28 V drain voltage, and 1200 mA quiescent current. This validated robustness ensures reliable operation during antenna detuning, cable faults, or environmental changes without latch-up or permanent degradation.
Is the BLF7G24L-160P suitable for Doherty amplifier topologies?
Yes-the BLF7G24L-160P is explicitly optimized for Doherty applications due to its lower output capacitance and low memory effects. These features improve peaking amplifier bandwidth and simplify time-alignment between carrier and peaking paths, enabling high-efficiency operation across wide instantaneous bandwidths in LTE-A systems.
What thermal interface material is recommended for mounting the BLF7G24L-160P flange?
NXP recommends using a thermally conductive, electrically insulating interface material such as Bergquist Sil-Pad 1000ST or Parker Chomerics T-flex 400, applied at 0.15–0.25 mm thickness with uniform pressure. The flange must be flat and clean (Ra < 0.8 µm), and mounting screws should be torqued to 0.5–0.7 N·m to maintain Rth(j-c) ≤ 0.2 K/W as specified for the BLF7G24L-160P.
BLF7G24L-160P,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-539A
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual, Common Source
- Frequency:
- 2.3GHz ~ 2.4GHz
- Gain:
- 18.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1.2 A
- Power - Output:
- 30W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- SOT539A
BLF7G24L-160P,112 FAQ
1.How can I place an order for BLF7G24L-160P,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLF7G24L-160P,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLF7G24L-160P,112 reliable?
The price and inventory of BLF7G24L-160P,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G24L-160P,112 is usually 5 days.
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Once your BLF7G24L-160P,112 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLF7G24L-160P,112?
For technical support, including BLF7G24L-160P,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G24L-160P,112 requirements.
6.How does Aetrix verify that BLF7G24L-160P,112 is sourced from the original manufacturer or authorized distributors?
All BLF7G24L-160P,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G24L-160P,112 meets industry standards.
7.What is the process for return or replacement of BLF7G24L-160P,112?
All BLF7G24L-160P,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G24L-160P,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLF7G24L-160P,112 part is unused and in its original packaging.
Return procedure for BLF7G24L-160P,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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