My Inquiry
My Account
NXP Semiconductors BLF7G24LS-140,118
- Part No.:
- BLF7G24LS-140,118
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-502B
- Datasheet:
-
BLF7G24LS-140,118.pdf
- Description:
- RF MOSFET LDMOS 28V SOT502B
- Quantity:
- Payment:
- Shipping:
Inventory:970
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BLF7G24LS-140 from NXP Semiconductors is a 140 W LDMOS RF power transistor designed for base station amplifiers operating at 2300–2400 MHz. It delivers 50 W average output power in W-CDMA mode with 18.5 dB gain and 33% drain efficiency at 28 V, 1300 mA bias, and features integrated ESD protection and internal impedance matching.
For engineers reviewing the BLF7G24LS-140 datasheet, BLF7G24LS-140 pinout, BLF7G24LS-140 application, or BLF7G24LS-140 equivalent, this device is selected for high-efficiency, rugged 2.3–2.4 GHz macrocell and small-cell PA stages requiring low memory effects, thermal stability, and VSWR = 10:1 load mismatch tolerance.
Technical Context
The BLF7G24LS-140 operates in common-source Class-AB configuration with fixed 28 V drain supply and 1300 mA quiescent current. Its LDMOS structure enables high ruggedness (VSWR = 10:1 survivability), low Rth(j-c) = 0.28 K/W, and gate threshold voltage of 1.8 V (typical), supporting stable linear amplification under dynamic signal conditions.
It is characterized for two key wireless standards: IS-95 (PAR = 9.7 dB, 1.2288 MHz bandwidth) and 3GPP W-CDMA TM1 (PAR = 7.2 dB, 3.84 MHz bandwidth). ACPR performance is specified at −45 dBc (885 kHz offset, IS-95) and −35 dBc (5 MHz offset, W-CDMA), confirming suitability for spectrally constrained cellular infrastructure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| foper | 2300–2400 MHz - supports full 2.3–2.4 GHz band for LTE Band 40 and WiMAX applications |
| PL(AV) | 50 W - average RF output power in W-CDMA mode, enabling multi-carrier base station PA stages |
| Gp | 18.5 dB - small-signal to large-signal power gain ensures minimal driver stage complexity |
| ηD | 33 % - drain efficiency at PL(AV) = 50 W reduces thermal load and DC power consumption |
| Rth(j-c) | 0.28 K/W - low junction-to-case thermal resistance enables reliable operation at Tcase ≤ 80 °C |
| VDS | 65 V - absolute maximum drain-source voltage allows safe margin over 28 V nominal rail |
| ACPR5M | −35 dBc - adjacent channel power ratio at 5 MHz offset meets 3GPP TM1 linearity requirements |
Pinout & Package
SOT502B earless flanged ceramic package with metalized bottom for direct thermal mounting; flange electrically connected to source terminal; no separate ground tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | High-current RF output node; requires low-inductance connection to output matching network and heatsink |
| 2 | Gate | RF input control terminal; internally matched to ~50 Ω; sensitive to ESD (integrated protection provided) |
| 3 | Source | Common reference node; bonded to flange; must be low-impedance RF ground and thermal path to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched | Eliminates external input/output matching components for 50 Ω systems, reducing board area and tuning effort |
| Low Rth(j-c) | 0.28 K/W enables >140 W CW operation with case temperature ≤80 °C using standard baseplate cooling |
| VSWR = 10:1 ruggedness | Survives worst-case antenna mismatch without degradation at 28 V, 140 W CW, 2300 MHz |
| Low memory effects | Enables effective digital pre-distortion (DPD) correction for wideband signals like 3GPP W-CDMA |
| Integrated ESD protection | HBM rating ≥2 kV on gate; eliminates need for external transient suppression in assembly |
Applications
| Macrocell Base Station PA | Small-Cell Remote Radio Head |
|---|---|
|
Use Scenario: High-power final-stage amplifier in outdoor macrocell BTS covering 2.3–2.4 GHz licensed spectrum. IC Role / Device Role / Timing Role: RF power transistor delivering 50 W avg. output in W-CDMA TM1 with 33% efficiency and −35 dBc ACPR at 5 MHz. Use Value: Reduces system-level thermal management burden while meeting 3GPP spectral mask and PAR handling requirements. |
Use Scenario: Compact, air-cooled PA module in distributed antenna system (DAS) remote radio head. IC Role / Device Role / Timing Role: Single-ended Class-AB LDMOS transistor biased at 28 V/1300 mA for 30–50 W linear output. Use Value: SOT502B earless flange simplifies mechanical integration into space-constrained enclosures without mounting hole interference. |
| ISM Band 2.4 GHz Infrastructure | Multi-Carrier WiMAX Amplifier |
|
Use Scenario: Fixed wireless access transmitter operating in unlicensed 2.4 GHz ISM band with high peak-to-average ratio signals. IC Role / Device Role / Timing Role: Ruggedized LDMOS transistor handling PAR ≥9.7 dB (IS-95-equivalent) with −45 dBc ACPR at 885 kHz. Use Value: Internal matching and ESD protection reduce bill-of-materials and improve field reliability in outdoor deployments. |
Use Scenario: Linear PA stage in WiMAX base station supporting multiple 5 MHz channels across 2.3–2.4 GHz band. IC Role / Device Role / Timing Role: High-efficiency RF power device delivering 30 W avg. output with 26.5% drain efficiency in IS-95 test mode. Use Value: Low memory effects and consistent gain flatness enable stable DPD convergence across multi-carrier modulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLF7G24L-140 | SOT502A package with two mounting holes; identical electrical specs and thermal Rth | Requires mechanical mounting via flange screws; better suited for forced-air or liquid-cooled macrocell designs | Select when board-level mechanical stability and maximum thermal dissipation are prioritized over footprint minimization |
| MRF7S24140HSR3 | Freescale (now NXP) 2.4 GHz 140 W LDMOS; SOT-1223 package; Rth(j-c) = 0.32 K/W; slightly lower Gp (17.8 dB typ.) | Higher package profile; different pin assignment; requires revalidation of gate bias network | Consider for drop-in replacement only after verifying PCB layout compatibility and thermal interface design |
Compared with BLF7G24LS-140, the BLF7G24L-140 offers identical RF performance but demands more board real estate for mounting, while MRF7S24140HSR3 provides similar power capability in a different mechanical form factor with marginally reduced gain and higher thermal resistance.
Availability
BLF7G24LS-140 is available at Aetrix Electronics and suitable for macrocell base stations, small-cell remote radio heads, ISM-band infrastructure transmitters, and multi-carrier WiMAX amplifiers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for BLF7G24LS-140 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.
The BLF7G24LS-140 belongs to NXP's high-power LDMOS transistor product line, engineered specifically for energy-efficient, spectrally clean RF power amplification in 2–2.7 GHz cellular infrastructure equipment.
FAQ
What is the maximum continuous wave (CW) output power rating for BLF7G24LS-140?
The BLF7G24LS-140 is rated for 140 W CW output power under specified ruggedness test conditions (VDS = 28 V, IDq = 1300 mA, f = 2300 MHz, Tcase = 80 °C). This rating reflects its capability to sustain full-power operation during worst-case VSWR = 10:1 load mismatches without failure. The BLF7G24LS-140 achieves this using its low Rth(j-c) = 0.28 K/W and robust LDMOS die construction.
Does BLF7G24LS-140 require external input/output matching networks?
No, the BLF7G24LS-140 is internally matched for 50 Ω operation across 2300–2400 MHz, eliminating the need for discrete input/output matching components in typical Class-AB amplifier designs. This simplifies PCB layout and reduces tuning iterations. However, external harmonic filtering and bias decoupling remain necessary. The BLF7G24LS-140's internal matching is validated per NXP's production test circuit and supports both IS-95 and W-CDMA modulation formats.
What is the gate-source threshold voltage (VGS(th)) specification for BLF7G24LS-140?
The BLF7G24LS-140 has a gate-source threshold voltage of 1.5 V (min), 1.8 V (typ), and 2.3 V (max) at VDS = 10 V and ID = 216 mA. This tightly controlled VGS(th) range ensures consistent turn-on behavior across production lots and supports stable Class-AB biasing. The BLF7G24LS-140's threshold voltage is measured under standardized conditions and directly impacts gate drive voltage selection in practical amplifier designs.
How does BLF7G24LS-140 handle load mismatch conditions?
The BLF7G24LS-140 is fully ruggedized to withstand VSWR = 10:1 load mismatches at all phase angles under CW conditions (28 V, 1300 mA, 140 W, 2300 MHz). This capability is verified per IEC 60134 limiting values and enables reliable operation in real-world base station environments where antenna detuning or cable faults may occur. The BLF7G24LS-140 achieves this through optimized LDMOS cell layout and thermal design, not external protection circuits.
Is BLF7G24LS-140 compliant with RoHS and REACH regulations?
Yes, the BLF7G24LS-140 complies with Directive 2002/95/EC (RoHS) and relevant REACH substance restrictions as confirmed in the official NXP product data sheet Rev. 3 (1 August 2011). It contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. The BLF7G24LS-140 is manufactured using halogen-free molding compounds and RoHS-compliant plating, supporting environmentally responsible electronics production.
BLF7G24LS-140,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-502B
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.3GHz ~ 2.4GHz
- Gain:
- 18.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 28A
- Noise Figure:
- -
- Current - Test:
- 1.3 A
- Power - Output:
- 30W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- SOT502B
BLF7G24LS-140,118 FAQ
1.How can I place an order for BLF7G24LS-140,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLF7G24LS-140,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLF7G24LS-140,118 reliable?
The price and inventory of BLF7G24LS-140,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G24LS-140,118 is usually 5 days.
3.What payment methods are accepted for BLF7G24LS-140,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF7G24LS-140,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BLF7G24LS-140,118?
BLF7G24LS-140,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BLF7G24LS-140,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLF7G24LS-140,118?
For technical support, including BLF7G24LS-140,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G24LS-140,118 requirements.
6.How does Aetrix verify that BLF7G24LS-140,118 is sourced from the original manufacturer or authorized distributors?
All BLF7G24LS-140,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G24LS-140,118 meets industry standards.
7.What is the process for return or replacement of BLF7G24LS-140,118?
All BLF7G24LS-140,118 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G24LS-140,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLF7G24LS-140,118 part is unused and in its original packaging.
Return procedure for BLF7G24LS-140,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BLF7G24LS-140,118 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
