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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLF7G24LS-160P,112

Name: BLF7G24LS-160P,112
Brand: NXP Semiconductors
SKU: BLF7G24LS-160P,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLF7G24LS-160P,112

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT539B

Datasheet:: BLF7G24LS-160P,112.pdf

Description:: RF MOSFET LDMOS 28V SOT539B

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Product details

Overview

BLF7G24LS-160P from NXP Semiconductors is a 160 W LDMOS RF power transistor designed for base station amplifiers operating in the 2300–2400 MHz band. It delivers 30 W average RF output power with 18.5 dB power gain and 27.5% drain efficiency under IS-95 modulation at V_DS = 28 V, I_Dq = 1200 mA, and T_case = 25 °C - enabling high-linearity Doherty PA designs for 3G infrastructure.

For engineers reviewing the BLF7G24LS-160P datasheet, BLF7G24LS-160P pinout, BLF7G24LS-160P application, or BLF7G24LS-160P equivalent, this page provides verified thermal resistance (R_th(j-c) = 0.2 K/W), ruggedness under VSWR = 10:1 mismatch, low memory effects for digital predistortion, internally matched broadband operation, and integrated ESD protection - all critical for cellular macro base station PA development.

Technical Context

This LDMOS transistor operates in common-source class-AB configuration with dual gate and dual drain terminals optimized for balanced push-pull or Doherty amplifier topologies. Its low output capacitance and internally matched 50 Ω input/output impedance simplify external matching network design across the full 2300–2400 MHz band.

Designed for high-reliability base station use, it features ruggedness validated at VSWR = 10:1 under full-power conditions (V_DS = 28 V, P_L = 160 W, f = 2300 MHz) and supports PAR = 9.7 dB at 0.01% CCDF probability - meeting stringent IS-95 multi-channel requirements with pilot, paging, sync, and six traffic channels.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	2300–2400 MHz - fully specified broadband operation for 3G LTE-TDD and WiMAX base station bands.
Output Power (P_L(AV))	30 W - verified average RF output under IS-95 signal with 9.7 dB PAR at 0.01% CCDF probability.
Power Gain (G_p)	18.5 dB - measured at 30 W output, enabling compact two-stage PA architectures without intermediate gain stages.
Drain Efficiency (η_D)	27.5% - enables thermally sustainable operation in air-cooled macro base station enclosures at 28 V supply.
Thermal Resistance R_th(j-c)	0.2 K/W - allows direct flange mounting to heatsinks, supporting junction temperatures up to 200 °C with case at 80 °C.
ACPR (885 kHz)	−45.5 dBc - meets spectral mask requirements for adjacent channel interference suppression in multi-carrier systems.
V_DS Max	65 V - provides 2.3× safety margin over 28 V nominal supply, ensuring robustness against transient voltage spikes.

Pinout & Package

BLF7G24LS-160P uses the SOT539B package: earless flanged balanced ceramic package with 4 leads and metal flange electrically connected to source (Pin 5). The flange enables direct thermal coupling to heatsinks and provides RF grounding reference.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain 1	Primary high-current RF output path; requires low-inductance connection to output matching network.
2	Drain 2	Secondary drain terminal for balanced topology implementation; used with Pin 1 in push-pull or Doherty carrier/amplifier configurations.
3	Gate 1	RF input control terminal for first transistor section; DC-biased via external network for class-AB operation.
4	Gate 2	RF input control terminal for second transistor section; independently biasable to optimize Doherty drive alignment.
5	Source	Common source node and flange connection point; serves as primary RF ground and thermal conduction path.

Key Features

Feature	Design Value
Internally matched broadband operation	Eliminates need for external input/output matching networks across 2300–2400 MHz, reducing BOM count and layout sensitivity.
Low memory effects	Enables effective digital predistortion (DPD) linearization with minimal convergence time and residual distortion.
Ruggedness at VSWR = 10:1	Withstands extreme load mismatches without degradation - critical for outdoor base station antenna system reliability.
Integrated ESD protection	Protects gate terminals during handling and assembly; meets HBM > 2 kV per JEDEC JESD22-A114.
Low R_th(j-c) = 0.2 K/W	Supports high-power density packaging and simplifies thermal management in space-constrained macro base station modules.

Applications

Macro Base Station PA	Doherty Amplifier Module
Use Scenario: High-efficiency final-stage RF power amplifier in 3G/4G macro cell sites operating in 2300–2400 MHz TDD-LTE bands. IC Role / Device Role / Timing Role: Primary LDMOS power transistor delivering 30 W average output in class-AB configuration with digital predistortion support. Use Value: Achieves −45.5 dBc ACPR and 27.5% drain efficiency at 30 W, reducing cooling requirements and operational energy costs.	Use Scenario: Carrier amplifier in asymmetric Doherty architecture for multi-carrier WCDMA base stations. IC Role / Device Role / Timing Role: High-efficiency main amplifier paired with peaking device (e.g., BLF7G24L-160P) to extend back-off efficiency. Use Value: Lower output capacitance improves harmonic tuning flexibility and bandwidth extension in Doherty combiner networks.
IS-95 CDMA BTS	WiMAX Base Transceiver
Use Scenario: Multi-channel IS-95 base transceiver supporting pilot, paging, sync, and six traffic channels (Walsh codes 8–13). IC Role / Device Role / Timing Role: Final-stage RF power transistor operating at PAR = 9.7 dB (0.01% CCDF) with 1.2288 MHz channel bandwidth. Use Value: Delivers 18.5 dB gain and −45.5 dBc ACPR while maintaining ruggedness under VSWR = 10:1 load mismatch.	Use Scenario: 2.3–2.4 GHz WiMAX base station transmitter requiring broadband linearity and thermal stability. IC Role / Device Role / Timing Role: Internally matched LDMOS transistor enabling simplified matching and reduced board area in outdoor remote radio units. Use Value: Low memory effects and 0.2 K/W thermal resistance support stable performance across temperature and aging in uncooled deployments.

Macro Base Station PA

Doherty Amplifier Module

Use Scenario: High-efficiency final-stage RF power amplifier in 3G/4G macro cell sites operating in 2300–2400 MHz TDD-LTE bands.

IC Role / Device Role / Timing Role: Primary LDMOS power transistor delivering 30 W average output in class-AB configuration with digital predistortion support.

Use Value: Achieves −45.5 dBc ACPR and 27.5% drain efficiency at 30 W, reducing cooling requirements and operational energy costs.

Use Scenario: Carrier amplifier in asymmetric Doherty architecture for multi-carrier WCDMA base stations.

IC Role / Device Role / Timing Role: High-efficiency main amplifier paired with peaking device (e.g., BLF7G24L-160P) to extend back-off efficiency.

Use Value: Lower output capacitance improves harmonic tuning flexibility and bandwidth extension in Doherty combiner networks.

IS-95 CDMA BTS

WiMAX Base Transceiver

Use Scenario: Multi-channel IS-95 base transceiver supporting pilot, paging, sync, and six traffic channels (Walsh codes 8–13).

IC Role / Device Role / Timing Role: Final-stage RF power transistor operating at PAR = 9.7 dB (0.01% CCDF) with 1.2288 MHz channel bandwidth.

Use Value: Delivers 18.5 dB gain and −45.5 dBc ACPR while maintaining ruggedness under VSWR = 10:1 load mismatch.

Use Scenario: 2.3–2.4 GHz WiMAX base station transmitter requiring broadband linearity and thermal stability.

IC Role / Device Role / Timing Role: Internally matched LDMOS transistor enabling simplified matching and reduced board area in outdoor remote radio units.

Use Value: Low memory effects and 0.2 K/W thermal resistance support stable performance across temperature and aging in uncooled deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BLF7G24L-160P	SOT539A package with two mounting holes; identical electrical specs but flanged (not earless) mechanical form factor.	Requires screw-mounting hardware; better suited for legacy heatsink interfaces designed for flanged packages.	Select BLF7G24L-160P when mechanical compatibility with existing SOT539A-based PCB footprints or heatsink fixtures is required.
AFM34015S	15 W GaN HEMT (2300–2400 MHz); higher gain (20.5 dB) and efficiency (45%), but lower P_1dB and different biasing requirements.	Targeted at small-cell and micro base stations where size and efficiency outweigh raw power needs.	Choose AFM34015S only for low-power, high-efficiency applications - not a drop-in replacement for macro base station 30 W output requirements.

Compared with BLF7G24L-160P, the BLF7G24LS-160P offers identical RF performance in an earless flanged package for simplified assembly, while AFM34015S trades power capability for GaN-level efficiency in lower-output scenarios - making BLF7G24LS-160P optimal for cost-sensitive, thermally demanding macro base station final stages.

Availability

BLF7G24LS-160P is available at Aetrix Electronics and suitable for macro base station power amplifiers, Doherty amplifier modules, IS-95 CDMA infrastructure, and WiMAX base transceivers requiring stable component supply across extended production lifecycles.

Supply support for BLF7G24LS-160P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technologies.

The BLF7G24LS-160P belongs to NXP's high-power LDMOS transistor family engineered specifically for cellular infrastructure applications - emphasizing ruggedness, broadband matching, and DPD-friendly linearity in 2–2.7 GHz bands.

FAQ

What is the maximum junction temperature rating for BLF7G24LS-160P?

The BLF7G24LS-160P has a maximum junction temperature (T_j) rating of 200 °C, as defined in Table 4 (Limiting Values) of the official NXP datasheet Rev. 5. This rating enables operation in high-ambient environments typical of outdoor base station enclosures when properly mounted to a heatsink with R_th(j-c) = 0.2 K/W.

Does BLF7G24LS-160P require external matching networks?

No - the BLF7G24LS-160P is internally matched for 50 Ω operation across 2300–2400 MHz, eliminating the need for external input/output matching components in standard class-AB amplifier designs. Matching is verified per Table 1 and Figure 1 (impedance definitions) in the NXP datasheet.

How does BLF7G24LS-160P support digital predistortion (DPD)?

The BLF7G24LS-160P is explicitly designed for low memory effects, as stated in Section 1.2 (Features and benefits). This characteristic minimizes dynamic nonlinearity variation over frequency and time, allowing DPD algorithms to converge faster and achieve lower residual ACLR - confirmed by its −45.5 dBc ACPR performance under IS-95 modulation.

What is the gate-source threshold voltage (V_GS(th)) range for BLF7G24LS-160P?

Per Table 6 (Characteristics), the gate-source threshold voltage for BLF7G24LS-160P is specified as 1.5 V (min), 1.9 V (typ), and 2.3 V (max) at V_DS = 10 V and I_D = 102 mA. This tight distribution supports consistent biasing across production lots in high-volume base station manufacturing.

Is BLF7G24LS-160P RoHS compliant?

Yes - the BLF7G24LS-160P complies with Directive 2002/95/EC (RoHS), as confirmed in Section 1.2 (Features and benefits) of the NXP datasheet. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above regulated thresholds.

BLF7G24LS-160P,112 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT539B

Packaging:: Tube

Product Status:: Active

Technology:: LDMOS

Configuration:: Dual, Common Source

Frequency:: 2.3GHz ~ 2.4GHz

Gain:: 18.5dB

Voltage - Test:: 28 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 1.2 A

Power - Output:: 30W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: SOT539B

BLF7G24LS-160P,112 FAQ

1.How can I place an order for BLF7G24LS-160P,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLF7G24LS-160P,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLF7G24LS-160P,112 reliable?

The price and inventory of BLF7G24LS-160P,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G24LS-160P,112 is usually 5 days.

3.What payment methods are accepted for BLF7G24LS-160P,112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF7G24LS-160P,112 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BLF7G24LS-160P,112?

BLF7G24LS-160P,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLF7G24LS-160P,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLF7G24LS-160P,112?

For technical support, including BLF7G24LS-160P,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G24LS-160P,112 requirements.

6.How does Aetrix verify that BLF7G24LS-160P,112 is sourced from the original manufacturer or authorized distributors?

All BLF7G24LS-160P,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G24LS-160P,112 meets industry standards.

7.What is the process for return or replacement of BLF7G24LS-160P,112?

All BLF7G24LS-160P,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G24LS-160P,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLF7G24LS-160P,112 part is unused and in its original packaging.

Return procedure for BLF7G24LS-160P,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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