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NXP Semiconductors BLF7G27L-150P,112
- Part No.:
- BLF7G27L-150P,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-539A
- Datasheet:
-
BLF7G27L-150P,112.pdf
- Description:
- RF MOSFET LDMOS 28V SOT539A
- Quantity:
- Payment:
- Shipping:
Inventory:35
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Product details
Overview
BLF7G27L-150P from NXP Semiconductors is a flanged balanced LDMOS power transistor designed for RF power amplification in 2500–2700 MHz base station transmitters. It delivers 30 W average output power (IS-95), 16.5 dB power gain, and 26 % drain efficiency at 28 V, 1200 mA bias under class-AB operation. Its ruggedness supports VSWR = 20:1 load mismatch tolerance in cellular infrastructure applications.
For engineers reviewing the BLF7G27L-150P datasheet, BLF7G27L-150P pinout, BLF7G27L-150P application, or BLF7G27L-150P equivalent, this page provides verified thermal resistance (0.25 K/W), gate-source threshold voltage (1.3–2.3 V), drain-source breakdown voltage (65 V), ACPR performance (−47 dBc at 885 kHz), and internal ESD protection - all critical for high-reliability macrocell PA design.
Technical Context
This LDMOST device operates in common-source class-AB configuration with dual gate and dual drain terminals optimized for broadband Doherty amplifier architectures. Its low output capacitance and low memory effects enable effective digital pre-distortion (DPD) linearization across IS-95 and W-CDMA standards.
The transistor features internally matched input/output impedances, integrated ESD protection on gate terminals, and a thermally robust ceramic SOT539A package with flange-mounted heat dissipation. Ruggedness testing confirms safe operation under 20:1 VSWR at 2500 MHz, 28 V, and 35 W output.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2500–2700 MHz - Supports full-band operation for LTE Band 7 and WiMAX 2.5–2.7 GHz infrastructure. |
| Avg. Output Power (IS-95) | 30 W - Enables single-carrier CDMA base station PA stages with PAR = 9.7 dB at 0.01% CCDF probability. |
| Power Gain | 16.5 dB - Reduces driver stage complexity and improves system-level power-added efficiency. |
| Drain Efficiency | 26 % - Lowers thermal load and DC power consumption in high-duty-cycle macrocell deployments. |
| Thermal Resistance (j-c) | 0.25 K/W - Ensures stable junction temperature below 225 °C even at 80 °C case temperature and 30 W dissipation. |
| ACPR (885 kHz) | −47 dBc - Meets stringent spectral mask requirements for adjacent channel interference suppression in CDMA systems. |
| VDS Max | 65 V - Provides 2.3× safety margin over 28 V operating rail, supporting transient overvoltage resilience. |
Pinout & Package
SOT539A flanged balanced ceramic package: 2 mounting holes, 4 leads, metal flange electrically connected to source (Pin 5). Designed for bolt-down thermal interface to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain 1 | Primary high-current RF output path; paralleled with Pin 2 for full 150 W capability in production circuits. |
| 2 | Drain 2 | Secondary drain terminal enabling symmetric current sharing and improved thermal distribution in push-pull/Doherty configurations. |
| 3 | Gate 1 | RF input control terminal; internally ESD-protected; requires external DC blocking and impedance matching network. |
| 4 | Gate 2 | Second gate terminal for balanced drive; enables differential gate biasing to minimize common-mode distortion. |
| 5 | Source | Common reference node; tied to flange and PCB ground plane; serves as primary thermal conduction path to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched | Reduces external matching component count and layout sensitivity - simplifies integration into 50 Ω RF systems. |
| Low Rth(j-c) | 0.25 K/W enables compact heatsink designs and extends lifetime in continuous high-power base station operation. |
| Lower output capacitance | Improves Doherty amplifier efficiency by reducing capacitive loading on peaking amplifier output matching. |
| Low memory effects | Enables >90% DPD correction accuracy in wideband W-CDMA signals with 3.84 MHz bandwidth and 7.2 dB PAR. |
| Integrated ESD protection | Withstands HBM ≥2 kV on gate terminals - eliminates need for external ESD diodes in production PA modules. |
Applications
| Macrocell Base Station PA | Doherty Amplifier Main Path |
|---|---|
Use Scenario: High-power RF final stage in 4G LTE FDD base stations operating in Band 7 (2500–2690 MHz). IC Role / Device Role / Timing Role: Primary power amplifying transistor delivering 30 W avg. output with 16.5 dB small-signal gain and −47 dBc ACPR. Use Value: Enables single-device solution for sector-level coverage without cascaded amplifier stages, reducing BOM cost and insertion loss. |
Use Scenario: Carrier amplifier in asymmetric Doherty architecture for multi-carrier W-CDMA macrocells. IC Role / Device Role / Timing Role: Linear main-path transistor biased at 1200 mA quiescent current, handling 64 DPCH traffic with 7.2 dB PAR. Use Value: Low memory effects and broadband matching allow >40 MHz instantaneous bandwidth while maintaining ACLR <−45 dBc. |
| CDMA2000 Infrastructure | High-Ruggedness Transmitter Module |
Use Scenario: Final PA stage in IS-95/CDMA2000 base station cabinets deployed in high-VSWR antenna environments. IC Role / Device Role / Timing Role: Ruggedized LDMOS transistor rated for 20:1 VSWR survivability at full 35 W output and 2500 MHz. Use Value: Eliminates need for external circulators or VSWR protection circuitry, lowering module size and failure rate in field-deployed equipment. |
Use Scenario: Core RF power device in outdoor-rated remote radio heads (RRHs) requiring extended thermal cycling reliability. IC Role / Device Role / Timing Role: Thermally stable power transistor with 225 °C max junction temperature and flange-to-case Rth = 0.25 K/W. Use Value: Supports 15+ year field life under 80 °C ambient with no derating up to 30 W output, validated per Telcordia GR-468. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLF7G27LS-150P | Same die, earless flanged SOT539B package - no mounting holes, reduced mechanical stability under thermal cycling. | Suitable for compact indoor small cells but not recommended for outdoor macrocell deployments with vibration or thermal stress. | Select BLF7G27L-150P when bolt-down mechanical integrity and long-term thermal interface reliability are required. |
| CGHV14800F | Gallium nitride HEMT; higher gain (18 dB), higher efficiency (55 %), but narrower bandwidth (2496–2690 MHz) and no integrated ESD protection. | Better suited for efficiency-critical active antenna systems (AAS) where GaN's higher voltage operation (50 V) reduces current-related losses. | Choose CGHV14800F only if redesigning for GaN-specific bias networks and external ESD protection; not drop-in compatible. |
Compared with BLF7G27LS-150P, the BLF7G27L-150P offers superior mechanical mounting and thermal interface repeatability; compared with CGHV14800F, it provides broader frequency coverage, built-in ESD protection, and proven reliability in legacy LDMOS-based macrocell platforms without GaN-specific design changes.
Availability
BLF7G27L-150P is available at Aetrix Electronics and suitable for macrocell base station PA design, Doherty amplifier development, and high-ruggedness transmitter module production requiring stable component supply and long-lifecycle support.
Supply support for BLF7G27L-150P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with core expertise in RF power technologies.
The BLF7G27L-150P belongs to NXP's high-power LDMOST portfolio, engineered specifically for broadband cellular infrastructure applications demanding high efficiency, ruggedness, and linearity from 2.5–2.7 GHz.
FAQ
What is the maximum junction temperature rating for BLF7G27L-150P?
The BLF7G27L-150P has a maximum junction temperature (Tj) rating of 225 °C, as specified in Table 4 (Limiting Values) of the NXP datasheet Rev. 2. This rating enables reliable operation in high-ambient environments typical of outdoor base station enclosures, provided thermal resistance from junction to case remains ≤0.25 K/W and case temperature is maintained ≤80 °C during 30 W operation.
Does BLF7G27L-150P require external matching networks?
Yes, BLF7G27L-150P is internally matched for ease of use but still requires external input and output matching networks to achieve optimal 50 Ω system integration. The datasheet specifies typical input return loss (RLin) of −10 dB, confirming partial internal matching - however, full broadband performance across 2500–2700 MHz demands external LC or transmission-line matching per application circuit requirements.
Can BLF7G27L-150P be used in Doherty amplifier configurations?
Yes, BLF7G27L-150P is explicitly designed for Doherty applications, featuring lower output capacitance and low memory effects to improve peaking amplifier synchronization and pre-distortability. Its dual-drain (Pins 1 & 2) and dual-gate (Pins 3 & 4) structure supports balanced drive topologies essential for high-efficiency Doherty PA implementation in W-CDMA and LTE base stations.
What is the gate-source threshold voltage range for BLF7G27L-150P?
The gate-source threshold voltage (VGS(th)) for BLF7G27L-150P is specified as 1.3 V (min), 1.9 V (typ), and 2.3 V (max) at VDS = 10 V and ID = 100 mA, per Table 6 (Characteristics) in the NXP datasheet. This tight threshold spread ensures consistent turn-on behavior across production lots, critical for stable class-AB biasing in high-volume base station manufacturing.
Is BLF7G27L-150P RoHS compliant?
Yes, BLF7G27L-150P is compliant with Directive 2002/95/EC (RoHS), as confirmed in Section 1.2 (Features and benefits) of the NXP product data sheet. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), meeting EU environmental regulations for commercial telecommunications equipment.
BLF7G27L-150P,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-539A
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual, Common Source
- Frequency:
- 2.5GHz ~ 2.7GHz
- Gain:
- 16.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 37A
- Noise Figure:
- -
- Current - Test:
- 1.2 A
- Power - Output:
- 30W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- SOT539A
BLF7G27L-150P,112 FAQ
1.How can I place an order for BLF7G27L-150P,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLF7G27L-150P,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLF7G27L-150P,112 reliable?
The price and inventory of BLF7G27L-150P,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G27L-150P,112 is usually 5 days.
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Once your BLF7G27L-150P,112 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for BLF7G27L-150P,112?
For technical support, including BLF7G27L-150P,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G27L-150P,112 requirements.
6.How does Aetrix verify that BLF7G27L-150P,112 is sourced from the original manufacturer or authorized distributors?
All BLF7G27L-150P,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G27L-150P,112 meets industry standards.
7.What is the process for return or replacement of BLF7G27L-150P,112?
All BLF7G27L-150P,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G27L-150P,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLF7G27L-150P,112 part is unused and in its original packaging.
Return procedure for BLF7G27L-150P,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BLF7G27L-150P,112 Tags
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