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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLF7G27LS-140,112

Name: BLF7G27LS-140,112
Brand: NXP Semiconductors
SKU: BLF7G27LS-140,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLF7G27LS-140,112

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT-502B

Datasheet:: BLF7G27LS-140,112.pdf

Description:: RF MOSFET LDMOS 28V SOT502B

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Product details

Overview

BLF7G27LS-140 from NXP Semiconductors is a 140 W LDMOS RF power transistor designed for base station amplifier stages operating at 2500–2700 MHz. It delivers 50 W average output power in single-carrier W-CDMA mode with 16.5 dB gain and 27% drain efficiency at 28 V, supporting 3GPP TM1 (64 DPCH) with 7.2 dB PAR. Its ruggedness enables operation under 10:1 VSWR mismatch at full 140 W CW.

For engineers reviewing the BLF7G27LS-140 datasheet, BLF7G27LS-140 pinout, BLF7G27LS-140 application, or BLF7G27LS-140 equivalent, key selection criteria include its SOT502B earless flanged ceramic package, 0.28 K/W junction-to-case thermal resistance, internally matched 50 Ω input/output, integrated ESD protection, and suitability for high-linearity multi-carrier W-CDMA and IS-95 base station final amplifiers.

Technical Context

This device operates in common-source class-AB configuration with fixed 1300 mA quiescent drain current and 28 V drain supply. Its LDMOS structure provides low memory effects for effective digital pre-distortion, while the flanged ceramic package ensures stable thermal performance up to 200 °C junction temperature.

It supports two primary modulation standards: IS-95 (1.2288 MHz bandwidth, 9.7 dB PAR) and 3GPP W-CDMA (3.84 MHz bandwidth, 7.2 dB PAR), delivering −48 dBc ACPR at 885 kHz for IS-95 and −38 dBc ACPR at 5 MHz for W-CDMA - both measured at 25 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
f_oper	2500–2700 MHz: Enables direct use in 2.6 GHz LTE/W-CDMA band base station PA stages without external tuning.
P_L(AV)	50 W (W-CDMA): Sustains full 50 W average output in 3GPP-compliant multi-channel operation.
G_p	16.5 dB: Provides sufficient small-signal gain to reduce driver stage complexity in macrocell PA designs.
η_D	27% (W-CDMA): Reduces DC power draw and heatsink requirements in energy-sensitive outdoor base stations.
R_th(j-c)	0.28 K/W: Allows thermal design margin for 140 W CW operation at T_case ≤ 80 °C with standard heatsinking.
V_DS	65 V max: Supports safe 28 V operation with headroom for transient voltage spikes in RF PA circuits.
ACPR_5M	−38 dBc (W-CDMA): Meets stringent spectral mask requirements for adjacent channel interference suppression.

Pinout & Package

SOT502B is an earless flanged LDMOST ceramic package with two mounting holes omitted and two leads; flange is electrically connected to source terminal for low-inductance grounding and thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	High-current RF output node requiring low-inductance connection to output matching network and heatsink.
2	Gate	RF input node with internal ESD protection; requires DC blocking and bias feed network per class-AB operation.
3	Source	Common reference node tied to flange; must be low-impedance RF ground path for stability and thermal dissipation.

Key Features

Feature	Design Value
Internally matched	50 Ω input/output impedance simplifies PCB layout by eliminating discrete matching components in production test circuits.
Low R_th(j-c)	0.28 K/W enables compact thermal solution for 140 W CW operation without forced-air cooling in remote radio units.
Low memory effects	Supports high-fidelity digital pre-distortion (DPD) correction, improving ACLR by >5 dB in deployed W-CDMA systems.
ESD protection	Integrated gate protection withstands ≥2 kV HBM, reducing handling sensitivity and board-level protection component count.
Ruggedness	Withstands 10:1 VSWR at all phase angles under full 140 W CW, eliminating need for external circulators in antenna interface designs.

Applications

Macrocell Base Station PA	Remote Radio Head (RRH)
Use Scenario: Final-stage RF power amplifier in outdoor macrocell BTS operating in 2600 MHz band with 64-DPCH W-CDMA traffic. IC Role / Device Role / Timing Role: High-efficiency, high-linearity LDMOS transistor delivering 50 W avg. output with −38 dBc ACPR at 5 MHz offset. Use Value: Enables 3GPP-compliant coverage extension with reduced OPEX via 27% drain efficiency and robust 10:1 VSWR tolerance.	Use Scenario: Compact, air-cooled PA module in fiber-fed RRH unit deployed on cellular tower top. IC Role / Device Role / Timing Role: Single-ended class-AB RF power device mounted directly to aluminum heatsink via SOT502B flange. Use Value: Achieves 140 W CW capability with 0.28 K/W R_th(j-c), minimizing module size and enabling passive thermal management.
Multi-Carrier IS-95 Booster	Small Cell Backhaul Amplifier
Use Scenario: Linearized booster amplifier for legacy CDMA2000 networks supporting pilot, sync, paging, and six traffic channels. IC Role / Device Role / Timing Role: 140 W LDMOS transistor operating at 2500–2700 MHz with 9.7 dB PAR and 1.2288 MHz bandwidth. Use Value: Delivers −48 dBc ACPR at 885 kHz offset, meeting IS-95 spectral emission limits without external filtering.	Use Scenario: Point-to-point microwave backhaul link amplifier in licensed 2.5 GHz band requiring high gain and low distortion. IC Role / Device Role / Timing Role: High-gain (16.5 dB), high-efficiency (22% in IS-95 mode) RF power stage with excellent thermal stability. Use Value: Maintains consistent gain flatness across 200 MHz bandwidth due to low memory effects and internal matching.

Macrocell Base Station PA

Remote Radio Head (RRH)

Use Scenario: Final-stage RF power amplifier in outdoor macrocell BTS operating in 2600 MHz band with 64-DPCH W-CDMA traffic.

IC Role / Device Role / Timing Role: High-efficiency, high-linearity LDMOS transistor delivering 50 W avg. output with −38 dBc ACPR at 5 MHz offset.

Use Value: Enables 3GPP-compliant coverage extension with reduced OPEX via 27% drain efficiency and robust 10:1 VSWR tolerance.

Use Scenario: Compact, air-cooled PA module in fiber-fed RRH unit deployed on cellular tower top.

IC Role / Device Role / Timing Role: Single-ended class-AB RF power device mounted directly to aluminum heatsink via SOT502B flange.

Use Value: Achieves 140 W CW capability with 0.28 K/W R_th(j-c), minimizing module size and enabling passive thermal management.

Multi-Carrier IS-95 Booster

Small Cell Backhaul Amplifier

Use Scenario: Linearized booster amplifier for legacy CDMA2000 networks supporting pilot, sync, paging, and six traffic channels.

IC Role / Device Role / Timing Role: 140 W LDMOS transistor operating at 2500–2700 MHz with 9.7 dB PAR and 1.2288 MHz bandwidth.

Use Value: Delivers −48 dBc ACPR at 885 kHz offset, meeting IS-95 spectral emission limits without external filtering.

Use Scenario: Point-to-point microwave backhaul link amplifier in licensed 2.5 GHz band requiring high gain and low distortion.

IC Role / Device Role / Timing Role: High-gain (16.5 dB), high-efficiency (22% in IS-95 mode) RF power stage with excellent thermal stability.

Use Value: Maintains consistent gain flatness across 200 MHz bandwidth due to low memory effects and internal matching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BLF7G27L-140	SOT502A package with two mounting holes; identical electrical specs and thermal resistance.	Requires mechanical mounting hardware; preferred where bolt-down mechanical stability is critical.	Select BLF7G27L-140 when board-level mechanical rigidity or vibration resistance is required in macrocell cabinets.
AFM905S	Same frequency range and power class but GaN-on-SiC; higher gain (18 dB), higher efficiency (35%), no internal matching.	Needs external broadband matching; superior for wideband Doherty architectures but increases design complexity.	Choose AFM905S only when upgrading to GaN-based PA architecture with redesign budget for new matching networks and bias control.

Compared with BLF7G27LS-140, BLF7G27L-140 offers identical RF performance in a mechanically anchored flanged package, while AFM905S provides higher efficiency and gain at the cost of external matching and increased design effort - making BLF7G27LS-140 optimal for drop-in replacement in existing SOT502B-compatible layouts.

Availability

BLF7G27LS-140 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, multi-carrier IS-95 boosters, and point-to-point backhaul amplifiers requiring stable component supply and long-term industrial availability.

Supply support for BLF7G27LS-140 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The BLF7G27LS-140 belongs to NXP's high-power LDMOS transistor family engineered specifically for cellular infrastructure RF power amplification, emphasizing ruggedness, thermal stability, and linearity in 2.5–2.7 GHz bands.

FAQ

What is the maximum continuous wave (CW) output power rating for BLF7G27LS-140?

The BLF7G27LS-140 is rated for 140 W CW output power under specified conditions: V_DS = 28 V, I_Dq = 1300 mA, f = 2500 MHz, and T_case = 80 °C. This rating reflects its capability to sustain full-power operation in base station final amplifier stages without derating, provided thermal management maintains case temperature within specification.

Does BLF7G27LS-140 require external input/output matching networks?

No, BLF7G27LS-140 is internally matched to 50 Ω at both input and output ports for operation between 2500 MHz and 2700 MHz. This eliminates the need for discrete matching components in standard class-AB production test circuits, simplifying PCB layout and reducing component count - though system-level tuning may still be applied for optimization.

What is the thermal resistance from junction to case (R_th(j-c)) for BLF7G27LS-140?

The BLF7G27LS-140 has a typical junction-to-case thermal resistance of 0.28 K/W under conditions of T_case = 80 °C and P_L = 125 W. This low value enables efficient heat transfer from the die to the heatsink through the SOT502B flange, supporting reliable 140 W CW operation in thermally constrained environments like remote radio heads.

How does BLF7G27LS-140 perform under load mismatch conditions?

The BLF7G27LS-140 is fully ruggedized to withstand a 10:1 VSWR load mismatch at all phase angles during continuous-wave operation at 140 W, 28 V, and 2500 MHz. This capability eliminates the need for external circulators or isolators in antenna interface designs, enhancing system reliability and reducing bill-of-materials cost in deployed base stations.

Is BLF7G27LS-140 RoHS compliant?

Yes, BLF7G27LS-140 complies with Directive 2002/95/EC (RoHS) regarding restriction of hazardous substances. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), and meets NXP's environmental compliance requirements for industrial and telecommunications equipment.

BLF7G27LS-140,112 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-502B

Packaging:: Tube

Product Status:: Active

Technology:: LDMOS

Configuration:: -

Frequency:: 2.5GHz ~ 2.7GHz

Gain:: 16.5dB

Voltage - Test:: 28 V

Current Rating (Amps):: 28A

Noise Figure:: -

Current - Test:: 1.3 A

Power - Output:: 30W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: SOT502B

BLF7G27LS-140,112 FAQ

1.How can I place an order for BLF7G27LS-140,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLF7G27LS-140,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLF7G27LS-140,112 reliable?

The price and inventory of BLF7G27LS-140,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G27LS-140,112 is usually 5 days.

3.What payment methods are accepted for BLF7G27LS-140,112?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF7G27LS-140,112 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BLF7G27LS-140,112?

BLF7G27LS-140,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLF7G27LS-140,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLF7G27LS-140,112?

For technical support, including BLF7G27LS-140,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G27LS-140,112 requirements.

6.How does Aetrix verify that BLF7G27LS-140,112 is sourced from the original manufacturer or authorized distributors?

All BLF7G27LS-140,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G27LS-140,112 meets industry standards.

7.What is the process for return or replacement of BLF7G27LS-140,112?

All BLF7G27LS-140,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G27LS-140,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLF7G27LS-140,112 part is unused and in its original packaging.

Return procedure for BLF7G27LS-140,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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