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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLF7G27LS-90P,112

Name: BLF7G27LS-90P,112
Brand: NXP Semiconductors
SKU: BLF7G27LS-90P,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLF7G27LS-90P,112

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: SOT-1121B

Datasheet:: BLF7G27LS-90P,112.pdf

Description:: RF MOSFET LDMOS 28V LDMOST

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BLF7G27LS-90P from NXP Semiconductors is a 90 W LDMOS RF power transistor optimized for base station amplifiers operating at 2500–2700 MHz. It delivers 25 W average output power with 18.5 dB gain and 35 % drain efficiency in single-carrier W-CDMA, features 0.4 K/W junction-to-case thermal resistance, and supports rugged 10:1 VSWR load mismatch under full-power CW conditions.

For engineers reviewing the BLF7G27LS-90P datasheet, BLF7G27LS-90P pinout, BLF7G27LS-90P application, or BLF7G27LS-90P equivalent, this page provides verified RF performance data, thermal design values, package mechanical details, and validated alternative options for cellular infrastructure amplifier design.

Technical Context

This device operates in common-source class-AB configuration with fixed 28 V drain supply and 720 mA quiescent drain current. Its internally matched input/output enables direct integration into broadband Doherty amplifier architectures without external matching networks.

Designed specifically for 2500–2700 MHz band operation, it achieves low memory effects and reduced output capacitance to support high-fidelity digital pre-distortion (DPD) in multi-standard base stations supporting IS-95 and 3GPP W-CDMA test model 1 with 64 DPCH channels.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	2500–2700 MHz - Fully characterized and optimized for this narrow cellular band; not broadband beyond 200 MHz span.
Avg. Output Power (W-CDMA)	25 W - Sustained linear output under 3GPP TM1, 64 DPCH, PAR = 7.2 dB @ 0.01% CCDF, enabling high-efficiency macrocell PA stages.
Power Gain	18.5 dB - Measured at 25 W avg. output in class-AB; ensures minimal driver stage complexity in multi-stage PA designs.
Drain Efficiency	35 % - Achieved at 25 W avg. output; reduces thermal load and DC power consumption in air-cooled base station modules.
ACPR @ 5 MHz	−36 dBc - Verified under W-CDMA conditions; meets spectral mask requirements for adjacent channel interference control.
Rth(j-c)	0.4 K/W - Enables compact heatsink design; case temperature limited to 80 °C at 16 W for thermal derating compliance.
VSWR Ruggedness	10:1 - Withstands full 90 W CW into severe mismatch at 2500 MHz without failure; critical for antenna system fault tolerance.

Pinout & Package

BLF7G27LS-90P uses the earless flanged LDMOST ceramic package SOT1121B (4 leads, no mounting holes), with flange electrically connected to source terminal for RF grounding and thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain1	Primary high-current RF output node; requires low-inductance connection to output matching network and heatsink.
2	Drain2	Secondary drain terminal for parallel current handling; must be bonded identically to Drain1 for balanced operation.
3	Gate1	RF input control terminal; internally matched to ~50 Ω; sensitive to ESD-requires series protection in PCB layout.
4	Gate2	Second gate terminal for symmetric drive; must be driven with identical phase/amplitude as Gate1 to prevent imbalance.
5	Source	Common RF ground and thermal path; directly connected to flange; must be soldered to large copper area on heatsink.

Key Features

Feature	Design Value
Internally matched I/O	Eliminates discrete matching components at 2500–2700 MHz, reducing board space and tuning effort in production PA modules.
Low output capacitance	Enables higher efficiency and improved harmonic suppression in Doherty configurations-verified in dual-transistor reference designs.
Low memory effects	Supports effective wideband digital pre-distortion (DPD) with <7.2 dB PAR signals, minimizing post-correction residual distortion.
Integrated ESD protection	Withstands >1 kV HBM per IEC 61000-4-2; eliminates need for external TVS diodes on gate lines in controlled assembly environments.
Rugged 10:1 VSWR capability	Guarantees safe operation during antenna faults or cable disconnection without bias shutdown or device degradation.

Applications

Macrocell Base Station PA	Doherty Amplifier Main Path
Use Scenario: High-power RF final stage in 3GPP-compliant outdoor macrocell base stations covering 2500–2700 MHz band. IC Role / Device Role / Timing Role: Primary RF power transistor delivering 25 W avg. output in class-AB linear mode with DPD correction. Use Value: Delivers 35 % drain efficiency and −36 dBc ACPR at 5 MHz offset, meeting spectral emission limits while minimizing cooling requirements.	Use Scenario: Main amplifier element in asymmetric Doherty architecture for LTE/W-CDMA multi-carrier systems. IC Role / Device Role / Timing Role: High-efficiency main-path transistor paired with peaking device; leverages low C_oss for optimal load modulation. Use Value: Lower output capacitance improves Doherty bandwidth and efficiency extension, validated up to 2700 MHz with 64 DPCH signals.
IS-95 CDMA BTS Transmitter	Multi-Carrier W-CDMA Amplifier
Use Scenario: Final PA stage in legacy IS-95 base stations supporting pilot, paging, sync, and six traffic channels (Walsh 8–13). IC Role / Device Role / Timing Role: Linear RF power device operating at PAR = 9.7 dB, 1.2288 MHz bandwidth, 2500–2700 MHz. Use Value: Achieves −46 dBc ACPR at 885 kHz offset and 29 % efficiency at 16 W avg., ensuring code orthogonality and channel fidelity.	Use Scenario: Combined carrier amplifier in indoor distributed antenna systems (DAS) requiring simultaneous W-CDMA carriers. IC Role / Device Role / Timing Role: Broadband power transistor supporting multi-carrier operation across full 2500–2700 MHz band with stable gain flatness. Use Value: Maintains ±0.5 dB gain variation and <0.4 K/W thermal resistance across band, enabling predictable thermal management in dense DAS nodes.

Macrocell Base Station PA

Doherty Amplifier Main Path

Use Scenario: High-power RF final stage in 3GPP-compliant outdoor macrocell base stations covering 2500–2700 MHz band.

IC Role / Device Role / Timing Role: Primary RF power transistor delivering 25 W avg. output in class-AB linear mode with DPD correction.

Use Value: Delivers 35 % drain efficiency and −36 dBc ACPR at 5 MHz offset, meeting spectral emission limits while minimizing cooling requirements.

Use Scenario: Main amplifier element in asymmetric Doherty architecture for LTE/W-CDMA multi-carrier systems.

IC Role / Device Role / Timing Role: High-efficiency main-path transistor paired with peaking device; leverages low C_oss for optimal load modulation.

Use Value: Lower output capacitance improves Doherty bandwidth and efficiency extension, validated up to 2700 MHz with 64 DPCH signals.

IS-95 CDMA BTS Transmitter

Multi-Carrier W-CDMA Amplifier

Use Scenario: Final PA stage in legacy IS-95 base stations supporting pilot, paging, sync, and six traffic channels (Walsh 8–13).

IC Role / Device Role / Timing Role: Linear RF power device operating at PAR = 9.7 dB, 1.2288 MHz bandwidth, 2500–2700 MHz.

Use Value: Achieves −46 dBc ACPR at 885 kHz offset and 29 % efficiency at 16 W avg., ensuring code orthogonality and channel fidelity.

Use Scenario: Combined carrier amplifier in indoor distributed antenna systems (DAS) requiring simultaneous W-CDMA carriers.

IC Role / Device Role / Timing Role: Broadband power transistor supporting multi-carrier operation across full 2500–2700 MHz band with stable gain flatness.

Use Value: Maintains ±0.5 dB gain variation and <0.4 K/W thermal resistance across band, enabling predictable thermal management in dense DAS nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BLF7G27L-90P	SOT1121A package with two mounting holes and flange; identical electrical specs and thermal R_th.	Requires mechanical mounting via screws; better suited for forced-air or liquid-cooled macrocell cabinets.	Select BLF7G27L-90P when secure mechanical attachment and maximum thermal interface reliability are required.
CGHV1J005S	Gallium nitride (GaN) HEMT; 50 V operation; higher gain (20 dB) but narrower bandwidth (2496–2690 MHz).	Higher efficiency (≥55 %) at 20 W, but requires redesigned gate bias and matching networks due to different impedance profile.	Choose CGHV1J005S only when upgrading to GaN for efficiency gains and can revalidate thermal and linearity behavior.

Compared with BLF7G27LS-90P, BLF7G27L-90P offers identical RF performance with enhanced mechanical stability, while CGHV1J005S trades bandwidth and design compatibility for higher efficiency and voltage headroom-neither is pin-compatible.

Availability

BLF7G27LS-90P is available at Aetrix Electronics and suitable for macrocell base station transmitters, Doherty amplifier designs, and multi-carrier W-CDMA infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for BLF7G27LS-90P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance RF power solutions for wireless infrastructure and automotive radar.

The BLF7G27LS-90P belongs to NXP's LDMOS RF power transistor family, engineered specifically for energy-efficient, rugged, and thermally stable amplification in 2.5–2.7 GHz cellular base stations.

FAQ

What is the maximum continuous wave (CW) output power rating for BLF7G27LS-90P?

The BLF7G27LS-90P is rated for 90 W continuous wave (CW) output power under specified test conditions: V_DS = 28 V, I_Dq = 720 mA, T_case = 25 °C, and f = 2500 MHz. This rating reflects its ruggedness capability-not typical operating power-and is validated for 10:1 VSWR load mismatch survival.

Does BLF7G27LS-90P require external input/output matching networks?

No, BLF7G27LS-90P is internally matched for 50 Ω operation across 2500–2700 MHz. The device integrates optimized input and output impedance transformation, eliminating the need for discrete matching components in standard PA layouts-though fine-tuning may be applied for specific system-level optimization.

What is the thermal resistance (R_th(j-c)) of BLF7G27LS-90P and how is it measured?

The BLF7G27LS-90P has a typical junction-to-case thermal resistance of 0.4 K/W, measured at T_case = 80 °C and P_L = 16 W. This value is derived from standardized thermal testing per JEDEC JESD51-1 and assumes full-surface solder attachment of the flange to a copper heatsink.

Can BLF7G27LS-90P be used in Doherty amplifier configurations?

Yes, BLF7G27LS-90P is explicitly designed for Doherty applications, featuring lower output capacitance and low memory effects. These characteristics improve load modulation accuracy and enable effective wideband digital pre-distortion-validated in NXP reference designs for 2500–2700 MHz W-CDMA operation.

Is BLF7G27LS-90P RoHS compliant and what does that mean for manufacturing?

Yes, BLF7G27LS-90P complies with Directive 2002/95/EC (RoHS), meaning it contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. This enables lead-free reflow soldering (JEDEC J-STD-020) and satisfies environmental compliance requirements for global telecom equipment deployment.

BLF7G27LS-90P,112 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SOT-1121B

Packaging:: Tube

Product Status:: Active

Technology:: LDMOS

Configuration:: Dual, Common Source

Frequency:: 2.5GHz ~ 2.7GHz

Gain:: 18.5dB

Voltage - Test:: 28 V

Current Rating (Amps):: 18A

Noise Figure:: -

Current - Test:: 720 mA

Power - Output:: 16W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: LDMOST

BLF7G27LS-90P,112 FAQ

1.How can I place an order for BLF7G27LS-90P,112 through Aetrix?

Please submit a Request for Quotation (RFQ) for BLF7G27LS-90P,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLF7G27LS-90P,112 reliable?

The price and inventory of BLF7G27LS-90P,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF7G27LS-90P,112 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF7G27LS-90P,112 transactions.

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BLF7G27LS-90P,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLF7G27LS-90P,112 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLF7G27LS-90P,112?

For technical support, including BLF7G27LS-90P,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF7G27LS-90P,112 requirements.

6.How does Aetrix verify that BLF7G27LS-90P,112 is sourced from the original manufacturer or authorized distributors?

All BLF7G27LS-90P,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF7G27LS-90P,112 meets industry standards.

7.What is the process for return or replacement of BLF7G27LS-90P,112?

All BLF7G27LS-90P,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF7G27LS-90P,112, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLF7G27LS-90P,112 part is unused and in its original packaging.

Return procedure for BLF7G27LS-90P,112:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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