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NXP Semiconductors BLF8G10LS-270,112
- Part No.:
- BLF8G10LS-270,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-502B
- Datasheet:
-
BLF8G10LS-270,112.pdf
- Description:
- RF MOSFET LDMOS 28V SOT502B
- Quantity:
- Payment:
- Shipping:
Inventory:36
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Product details
Overview
BLF8G10LS-270 from NXP Semiconductors is a 270 W LDMOS power transistor designed for base station RF power amplification in the 820–960 MHz band. It delivers 67 W average output power with 18.5 dB gain and 33 % drain efficiency under 2-carrier W-CDMA conditions (920–960 MHz, PAR = 8.4 dB), operating at VDS = 28 V and IDq = 2000 mA. Its ruggedness supports VSWR = 10:1 load mismatch across the full band.
For engineers reviewing the BLF8G10LS-270 datasheet, BLF8G10LS-270 pinout, BLF8G10LS-270 application, or BLF8G10LS-270 equivalent, key selection criteria include thermal resistance (Rth(j-c) = 0.264 K/W), gate-source threshold voltage (VGS(th) = 1.5–2.3 V), drain-source breakdown voltage (V(BR)DSS ≥ 65 V), adjacent channel power ratio (ACPR5M = −35 dBc), and internally matched broadband operation.
Technical Context
The BLF8G10LS-270 is a laterally diffused metal oxide semiconductor (LDMOS) device optimized for class-AB operation in multi-carrier W-CDMA base station amplifiers. Its low memory effects and reduced output capacitance support high pre-distortion linearity and Doherty amplifier integration.
It features integrated ESD protection, an earless flanged ceramic SOT502B package with direct flange grounding, and is rated for junction temperatures up to 225 °C. The device sustains VSWR = 10:1 mismatches at 820/869/920/960 MHz while delivering full 270 W peak power under production test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 65 V - Enables safe operation at 28 V DC supply with margin against transient overvoltage |
| POUT (CW) | 270 W - Peak RF output capability for high-power macro base station stages |
| Gp | 18.5 dB - Sufficient gain to reduce driver stage complexity in multi-stage PA designs |
| ηD | 33 % - Reduces heat dissipation and cooling requirements in densely packed RF modules |
| Rth(j-c) | 0.264 K/W - Enables high-power operation with minimal case-to-junction temperature rise |
| ACPR5M | −35 dBc - Meets stringent 3GPP spectral mask requirements for 2-carrier W-CDMA signals |
| VGS(th) | 1.5–2.3 V - Supports stable biasing with standard gate control circuitry |
| f range | 820–960 MHz - Covers primary bands for global W-CDMA and LTE FDD deployments |
Pinout & Package
The BLF8G10LS-270 uses an earless flanged ceramic SOT502B package with three terminals: drain (pin 1), gate (pin 2), and source (pin 3). The flange is electrically connected to the source terminal and serves as the primary thermal and RF ground path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | RF power output node | High-current, high-voltage terminal requiring low-inductance PCB layout and thermal via array |
| 2 (Gate) | Control input | Low-impedance RF input requiring impedance-matched microstrip and ESD-protected bias network |
| 3 (Source) | Common reference and thermal path | Internally bonded to flange; must be soldered to large copper area for thermal and RF grounding |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched broadband design | Eliminates external matching networks for 820–960 MHz operation, reducing BOM count and layout sensitivity |
| Low Rth(j-c) (0.264 K/W) | Enables compact heatsink solutions and improves long-term reliability under sustained 67 W average output |
| Low output capacitance | Improves Doherty amplifier efficiency by minimizing capacitive loading on peaking path transistors |
| Low memory effects | Supports digital pre-distortion (DPD) convergence with minimal calibration overhead in deployed systems |
| Integrated ESD protection | Withstands human-body-model (HBM) ESD events without external protection diodes, simplifying handling and assembly |
| Ruggedness (VSWR = 10:1) | Survives antenna mismatch faults across full frequency band without degradation, enhancing system robustness |
Applications
| W-CDMA Macro Base Station PA | Doherty Power Amplifier Stage |
|---|---|
Use Scenario: High-power final-stage RF amplifier in outdoor macrocell base stations operating in Band V (824–849 MHz UL / 869–894 MHz DL) and Band VIII (880–915 MHz UL / 925–960 MHz DL). IC Role / Device Role / Timing Role: Main RF power transistor delivering 270 W peak output in class-AB configuration with 2-carrier W-CDMA signal. Use Value: Delivers 33 % drain efficiency and −35 dBc ACPR at 67 W average power, meeting 3GPP TM1 compliance with minimal thermal derating. |
Use Scenario: Peaking path transistor in asymmetric Doherty architecture for improved back-off efficiency in multi-carrier W-CDMA applications. IC Role / Device Role / Timing Role: Secondary LDMOS transistor activated during signal peaks, leveraging low output capacitance and broadband match. Use Value: Enables >15 % efficiency improvement at 6–8 dB power back-off versus conventional class-AB PAs, extending coverage and reducing OPEX. |
| Multi-Carrier Cellular Infrastructure | High-Ruggedness RF Front-End |
Use Scenario: Final amplifier in distributed antenna systems (DAS) and remote radio units (RRUs) supporting concurrent 3G/4G carriers in 820–960 MHz spectrum. IC Role / Device Role / Timing Role: Broadband power transistor handling 4-carrier W-CDMA signals (f1–f4 spaced at 10 MHz) with PAR = 8.4 dB. Use Value: Maintains linear performance (−30 dBc ACPR min) across all carriers without retuning, simplifying multi-band deployment. |
Use Scenario: Critical RF power stage in mission-critical infrastructure where antenna VSWR excursions are frequent (e.g., rooftop installations with seasonal icing or wind-induced misalignment). IC Role / Device Role / Timing Role: Ruggedized LDMOS transistor sustaining VSWR = 10:1 at all phase angles across 820/869/920/960 MHz. Use Value: Eliminates need for circulators or VSWR-sensing shutdown logic, reducing system cost and failure points. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLF8G20LS-270 | Higher fmax (1805–2200 MHz), lower gain (16.5 dB), same 270 W PPEAK and SOT502B package | Targeted for LTE Band 3/7/20/34/40 instead of W-CDMA Bands V/VIII | Select when operating above 1 GHz; not suitable for 820–960 MHz due to degraded gain and efficiency |
| MRF6VP2750HR5 | Same 270 W PPEAK, higher VDS rating (130 V), larger TO-272 package, no internal ESD protection | Designed for 28 V base stations with higher voltage headroom and discrete ESD implementation | Choose for legacy 28 V architectures requiring higher voltage margin; requires external ESD protection and larger footprint |
Compared with BLF8G10LS-270, BLF8G20LS-270 shifts operational bandwidth upward but sacrifices low-band gain, while MRF6VP2750HR5 trades package compactness and integrated ESD for higher voltage tolerance-neither is pin-compatible, and both require board-level redesign.
Availability
BLF8G10LS-270 is available at Aetrix Electronics and suitable for W-CDMA base station amplifiers, Doherty RF power stages, and multi-carrier cellular infrastructure requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.
Supply support for BLF8G10LS-270 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.
The BLF8G10LS-270 belongs to NXP's high-power LDMOS transistor product line, engineered specifically for energy-efficient, rugged, and spectrally clean RF power amplification in 3G/4G macro base station infrastructure.
FAQ
What is the maximum continuous drain current rating for BLF8G10LS-270?
The BLF8G10LS-270 does not specify a maximum continuous drain current (ID) rating. Instead, its safe operating area is defined by limiting values including VDS ≤ 65 V, Tj ≤ 225 °C, and thermal resistance Rth(j-c) = 0.264 K/W. Under typical 67 W average output conditions (VDS = 28 V, IDq = 2000 mA), peak pulsed current reaches ~15.75 A per DC characteristics table. Designers must verify SOA compliance using thermal modeling and actual PCB heatsinking.
Does BLF8G10LS-270 require external matching components for 900 MHz operation?
No, the BLF8G10LS-270 is internally matched for broadband operation from 820 MHz to 960 MHz. The datasheet confirms typical impedance values (e.g., ZL = 1.04 − j1.13 Ω at 920 MHz) and specifies performance in a "straight lead device" test circuit without external matching. However, system-level output filtering and harmonic suppression still require external LC networks per application requirements.
What is the gate-source threshold voltage range for BLF8G10LS-270?
The gate-source threshold voltage (VGS(th)) for BLF8G10LS-270 is specified as 1.5 V (min), 1.8 V (typ), and 2.3 V (max) at VDS = 10 V and ID = 450 mA. This tight range ensures consistent turn-on behavior across production lots and simplifies gate bias network design for class-AB operation at IDq = 2000 mA.
Is BLF8G10LS-270 qualified for automotive applications?
No, BLF8G10LS-270 is not automotive-qualified. Per NXP's legal disclaimers, it is intended for base station infrastructure use only and has not been tested or certified to AEC-Q101 or other automotive reliability standards. Its junction temperature rating (225 °C) exceeds automotive requirements, but qualification status, screening, and failure mode analysis are absent from the datasheet.
How does the thermal resistance of BLF8G10LS-270 impact heatsink selection?
With Rth(j-c) = 0.264 K/W, the BLF8G10LS-270 transfers heat efficiently from junction to case, but effective heatsinking remains critical. For 67 W average power dissipation, a case-to-ambient thermal resistance ≤ 0.5 K/W is required to hold Tj ≤ 150 °C at 25 °C ambient. This typically demands a forced-air-cooled aluminum heatsink ≥ 300 cm² surface area or liquid-cooled interface in macro base station modules.
BLF8G10LS-270,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-502B
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 820MHz ~ 960MHz
- Gain:
- 18.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 4.2µA
- Noise Figure:
- -
- Current - Test:
- 2 A
- Power - Output:
- 270W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- SOT502B
BLF8G10LS-270,112 FAQ
1.How can I place an order for BLF8G10LS-270,112 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLF8G10LS-270,112 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLF8G10LS-270,112 reliable?
The price and inventory of BLF8G10LS-270,112 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF8G10LS-270,112 is usually 5 days.
3.What payment methods are accepted for BLF8G10LS-270,112?
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4.How is shipping managed for BLF8G10LS-270,112?
BLF8G10LS-270,112 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BLF8G10LS-270,112 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLF8G10LS-270,112?
For technical support, including BLF8G10LS-270,112 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF8G10LS-270,112 requirements.
6.How does Aetrix verify that BLF8G10LS-270,112 is sourced from the original manufacturer or authorized distributors?
All BLF8G10LS-270,112 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF8G10LS-270,112 meets industry standards.
7.What is the process for return or replacement of BLF8G10LS-270,112?
All BLF8G10LS-270,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLF8G10LS-270,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLF8G10LS-270,112 part is unused and in its original packaging.
Return procedure for BLF8G10LS-270,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BLF8G10LS-270,112 Tags
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