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NXP Semiconductors BLF8G22LS-310AVJ
- Part No.:
- BLF8G22LS-310AVJ
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
BLF8G22LS-310AVJ.pdf
- Description:
- RF MOSFET LDMOS
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Inventory:6,865
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Product details
Overview
BLF8G22LS-310AV from Ampleon is a 310 W asymmetric Doherty LDMOS power transistor designed for base station RF power amplifiers operating at 1900–2000 MHz. It delivers 47.5 dBm average output power, 17 dB power gain, and 42.5% drain efficiency under 1-carrier W-CDMA conditions (PAR = 9.65 dB), with rugged VSWR = 10:1 load mismatch tolerance in Doherty mode.
For engineers reviewing the BLF8G22LS-310AV datasheet, BLF8G22LS-310AV pinout, BLF8G22LS-310AV application, or BLF8G22LS-310AV equivalent, this device supports high-efficiency, digitally pre-distorted multi-carrier cellular infrastructure amplifiers requiring low memory effects, integrated ESD protection, and thermally stable operation up to 225 °C junction temperature.
Technical Context
The BLF8G22LS-310AV integrates two LDMOS devices - main amplifier (IDq = 650 mA) and peak amplifier (IDq = 1100 mA) - in a single air-cavity plastic flanged SOT1258-1 package. Its internally matched design targets asymmetrical Doherty architectures with optimized ZS/ZL impedances across 1930–1995 MHz for both maximum power and maximum efficiency loads.
It operates at VDS = 28 V with gate-source voltage ranges of −0.5 V to +13 V for both main and peak sections, and features low thermal resistance (Rth(j–c) = 0.30 K/W) enabling high-power CW and modulated signal operation while maintaining junction temperatures ≤225 °C under rated PL(AV) = 56 W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1900–2000 MHz - Optimized for LTE Band 2/25 uplink/downlink and W-CDMA cellular infrastructure. |
| Average Output Power | 47.5 dBm (56 W) - Delivers full Doherty output at typical base station signal PAR (9.65 dB). |
| Power Gain | 17 dB - Enables compact driver stage design with margin for system-level gain control. |
| Drain Efficiency | 42.5 % - Reduces heat dissipation and DC power consumption in high-density macro base stations. |
| ACPR (5 MHz) | −33 dBc - Meets 3GPP spectral mask requirements for adjacent channel interference suppression. |
| Thermal Resistance | 0.30 K/W (j–c) - Supports high-power operation with standard heatsink mounting and forced-air cooling. |
| VSWR Tolerance | 10:1 - Ensures reliable operation under antenna mismatch without protection circuitry or shutdown. |
Pinout & Package
Air cavity plastic earless flanged package (SOT1258-1), 6-lead, thermally enhanced for RF power applications; flange is electrically connected to source (Pin 5).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | drain2 (peak) | High-current RF output node for peak amplifier section; requires low-inductance RF grounding and thermal path. |
| 2 | drain1 (main) | Main amplifier RF output node; biased at 28 V and 650 mA quiescent current for linear Doherty operation. |
| 3 | gate1 (main) | Main amplifier RF input; internally matched to ~50 Ω; DC blocking required for bias feed network. |
| 4 | gate2 (peak) | Peak amplifier RF input; separate bias control enables independent gate voltage tuning (VGS(amp)peak = 0.5 V typical). |
| 5 | source | Common source terminal for both main and peak devices; connected to flange for thermal and RF return path. |
| 6 | video decoupling (peak) | DC bias decoupling node for peak amplifier; used with external capacitor to stabilize low-frequency impedance. |
| 7 | video decoupling (main) | DC bias decoupling node for main amplifier; ensures stable quiescent current under modulation. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetric Doherty Integration | Single-package co-location of main and peak LDMOS devices eliminates inter-device phase/timing skew and simplifies PCB layout. |
| Low Memory Effects | Enables high-fidelity digital pre-distortion (DPD) correction with minimal residual distortion after linearization. |
| Internally Matched | Reduces external matching component count; supports direct integration into production-ready Doherty combiner networks. |
| Integrated ESD Protection | HBM Class 2 (2 kV) and CDM Class C2A (500 V) protection eliminate need for discrete ESD clamps at RF ports. |
| Low Output Capacitance | Improves harmonic termination and bandwidth in Doherty load-modulation networks, enhancing efficiency extension. |
Applications
| Macro Base Station Transmitter | Multi-Carrier W-CDMA Amplifier |
|---|---|
Use Scenario: High-power outdoor macro cell site transmitting 4×20 MHz carriers in Band 2 (1930–1990 MHz). IC Role / Device Role / Timing Role: Final-stage asymmetric Doherty RF power amplifier delivering 300 W peak output with DPD linearization. Use Value: Achieves 42.5% drain efficiency at 56 W average power, reducing cooling requirements and AC power draw by >15% vs. legacy Class AB designs. |
Use Scenario: Indoor distributed antenna system (DAS) head-end supporting concurrent 3GPP TM1 64-DPCH signals. IC Role / Device Role / Timing Role: Dual-path LDMOS amplifier enabling simultaneous carrier amplification with shared thermal management. Use Value: Maintains −33 dBc ACPR across 1930–1995 MHz without additional filtering, lowering BOM cost and board area. |
| 5G NR Sub-6 GHz Booster | Active Antenna System (AAS) Module |
Use Scenario: 5G NR n25/n66 band booster amplifier operating in 1920–2010 MHz range with 100 MHz instantaneous bandwidth. IC Role / Device Role / Timing Role: High-linearity final-stage PA supporting 8×8 MIMO with envelope tracking compatibility. Use Value: Delivers 7.25 dB PARO at 56 W average power, enabling efficient ET implementation and >300 W peak output capability. |
Use Scenario: Integrated active antenna unit with 8-element panel requiring compact, thermally robust PA per element. IC Role / Device Role / Timing Role: Single-package Doherty PA enabling per-element beamforming with minimized interconnect loss. Use Value: Flange-mounted SOT1258-1 package provides <0.30 K/W thermal resistance, allowing 8× parallel operation on shared heatsink without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLF8G22LS-310B | Same die, different lead finish (SnAg vs. SnPb); RoHS-compliant matte tin plating; identical RF specs and thermal performance. | Preferred for lead-free assembly processes; no change in thermal interface or RF layout required. | Select BLF8G22LS-310B when lead-free soldering is mandated and matte tin finish is specified in manufacturing flow. |
| MRF8S21100HR5 | 100 W GaN HEMT; higher gain (18.5 dB) but lower average power; requires external matching and separate peak/main bias control. | Suitable for lower-power remote radio heads (RRH); not drop-in due to different package (NI-780), pinout, and bias architecture. | Choose MRF8S21100HR5 only when GaN's higher frequency headroom (up to 2.2 GHz) and gain justify redesign effort and cost premium. |
Compared with BLF8G22LS-310AV, BLF8G22LS-310B offers identical RF and thermal behavior with lead-free compatibility, while MRF8S21100HR5 trades power output and integration for GaN's frequency scalability - making the former a seamless upgrade and the latter a platform-level re-architecture decision.
Availability
BLF8G22LS-310AV is available at Aetrix Electronics and suitable for macro base station transmitters, multi-carrier W-CDMA amplifiers, and 5G NR sub-6 GHz boosters requiring stable component supply, long-term lifecycle support, and traceable sourcing for telecom infrastructure programs.
Supply support for BLF8G22LS-310AV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Ampleon Netherlands B.V. is a global leader in RF power semiconductors, spun off from NXP in 2015, specializing in LDMOS and GaN solutions for cellular infrastructure, broadcast, and industrial applications.
The BLF8G22LS-310AV belongs to Ampleon's Airfast® family of asymmetric Doherty transistors, engineered specifically for energy-efficient, high-linearity macro base station amplifiers operating in licensed 1.9–2.0 GHz spectrum bands.
FAQ
What is the recommended gate bias voltage for the peak amplifier section of the BLF8G22LS-310AV?
The BLF8G22LS-310AV peak amplifier section is characterized at VGS(amp)peak = 0.5 V under typical test conditions (VDS = 28 V, IDq = 1100 mA). This voltage optimizes linearity and efficiency in asymmetric Doherty operation. The absolute maximum rating allows up to +13 V, but exceeding 0.5 V risks gain compression and reduced ACPR performance. Always verify bias stability with thermal monitoring during prototype validation.
Does the BLF8G22LS-310AV require external input/output matching networks?
The BLF8G22LS-310AV is internally matched for 50 Ω operation at its designated frequency band (1930–1995 MHz), eliminating the need for discrete input matching. However, external output matching remains essential to realize optimal Doherty load modulation - particularly for transforming the main and peak impedances (e.g., ZL = 1.1–j4.1 Ω and 1.4–j4.7 Ω) into the required combiner network topology.
What thermal interface material is recommended for mounting the BLF8G22LS-310AV flange?
For the BLF8G22LS-310AV's SOT1258-1 flanged package, Ampleon recommends thermally conductive epoxy (e.g., MG8331 or Ablestik 5571) or high-performance thermal pads (e.g., Laird T-flex 400) with ≤0.15 K·in²/W interface resistance. Mounting pressure must be uniform (25–35 psi) across the 32.3 mm × 10.2 mm flange to maintain Rth(j–c) ≤0.30 K/W. Avoid silicone-based greases that may outgas under sustained 225 °C junction conditions.
Can the BLF8G22LS-310AV operate reliably under VSWR = 10:1 load mismatch?
Yes - the BLF8G22LS-310AV is specifically ruggedized for VSWR = 10:1 across all phase angles at 1930 MHz under W-CDMA conditions (PL(M) = −5 dB, 100% clipping). This capability is validated per Ampleon's internal Doherty ruggedness test protocol and eliminates the need for external circulators or VSWR protection circuits in macro base station front-ends where antenna detuning is common.
Is the BLF8G22LS-310AV pin-compatible with earlier versions like BLC8G20LS-310AV?
No - the BLF8G22LS-310AV is not pin-compatible with BLC8G20LS-310AV. Although both use SOT1258-1, the BLF8G22LS-310AV has 7 terminals (including dedicated video decoupling pins 6 and 7), whereas BLC8G20LS-310AV uses only 6 pins. Layout revision is mandatory; refer to Table 2 in the BLF8G22LS-310AV datasheet for exact pin assignments and flange connection details.
BLF8G22LS-310AVJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
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- Noise Figure:
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- Current - Test:
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- Voltage - Rated:
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BLF8G22LS-310AVJ FAQ
1.How can I place an order for BLF8G22LS-310AVJ through Aetrix?
Please submit a Request for Quotation (RFQ) for BLF8G22LS-310AVJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLF8G22LS-310AVJ reliable?
The price and inventory of BLF8G22LS-310AVJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF8G22LS-310AVJ is usually 5 days.
3.What payment methods are accepted for BLF8G22LS-310AVJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF8G22LS-310AVJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BLF8G22LS-310AVJ?
BLF8G22LS-310AVJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BLF8G22LS-310AVJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLF8G22LS-310AVJ?
For technical support, including BLF8G22LS-310AVJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF8G22LS-310AVJ requirements.
6.How does Aetrix verify that BLF8G22LS-310AVJ is sourced from the original manufacturer or authorized distributors?
All BLF8G22LS-310AVJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF8G22LS-310AVJ meets industry standards.
7.What is the process for return or replacement of BLF8G22LS-310AVJ?
All BLF8G22LS-310AVJ units undergo pre-shipment inspection (PSI). If there is an issue with BLF8G22LS-310AVJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLF8G22LS-310AVJ part is unused and in its original packaging.
Return procedure for BLF8G22LS-310AVJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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