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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors BLF8G22LS-310AVU

Name: BLF8G22LS-310AVU
Brand: NXP Semiconductors
SKU: BLF8G22LS-310AVU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BLF8G22LS-310AVU

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: -

Datasheet:: BLF8G22LS-310AVU.pdf

Description:: RF MOSFET LDMOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BLF8G22LS-310AV from Ampleon is a 310 W LDMOS asymmetric Doherty power transistor designed for base station RF power amplifiers operating at 1900–2000 MHz. It delivers 47.5 dBm average output power, 17 dB power gain, and 42.5% drain efficiency under 1-carrier W-CDMA test conditions (PAR = 9.65 dB), with rugged VSWR = 10:1 load mismatch tolerance.

For engineers reviewing the BLF8G22LS-310AV datasheet, BLF8G22LS-310AV pinout, BLF8G22LS-310AV application, or BLF8G22LS-310AV equivalent, key selection criteria include its integrated ESD protection, low thermal resistance (0.30 K/W), internally matched 50 Ω input/output, Doherty-optimized output capacitance, and suitability for multi-carrier W-CDMA and LTE infrastructure amplifiers requiring high linearity and digital pre-distortion capability.

Technical Context

The BLF8G22LS-310AV implements a dual-gate, dual-drain LDMOS structure with physically separate main and peak amplifier cells in a single air-cavity flanged package. Its asymmetrical Doherty architecture enables high efficiency across back-off ranges, supported by low memory effects and optimized impedance matching for 1930–1995 MHz operation.

It operates at V_DS = 28 V with quiescent currents of 650 mA (main) and 1100 mA (peak), and features gate-source voltage ratings up to +13 V for both amplifier sections. Thermal design is enabled by direct flange mounting and a case-to-junction thermal resistance of 0.30 K/W at 56 W CW output.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	1900–2000 MHz - Optimized for 3GPP Band II (PCS) base station applications
Avg. Output Power	47.5 dBm (56 W) - Delivers full rated power under 1-carrier W-CDMA with PAR = 9.65 dB
Power Gain	17 dB - Enables reduced driver stage complexity in macrocell PA designs
Drain Efficiency	42.5% - Reduces heat dissipation and DC power consumption in continuous operation
ACPR (5 MHz)	−33 dBc - Meets stringent spectral mask requirements for W-CDMA without excessive DPD effort
VSWR Tolerance	10:1 - Sustains full-rated RF output under severe antenna mismatch conditions
Thermal Resistance	0.30 K/W - Supports high-power density PCB layouts with minimal heatsink mass

Pinout & Package

Air cavity plastic earless flanged package (SOT1258-1), 7-terminal, flange-connected to ground. Designed for bolt-down thermal mounting on copper heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1	drain2 (peak)	High-current RF output node for peak amplifier section; requires low-inductance RF grounding
2	drain1 (main)	High-current RF output node for main amplifier section; forms Doherty combiner junction
3	gate1 (main)	DC-biased control input for main amplifier; internal matching simplifies gate bias network design
4	gate2 (peak)	DC-biased control input for peak amplifier; independent bias enables precise Doherty alignment
5	source	Common source terminal for both amplifier sections; connected to flange and system ground
6	video decoupling (peak)	RF bypass path for peak amplifier supply; minimizes supply modulation during high-PAR operation
7	video decoupling (main)	RF bypass path for main amplifier supply; ensures stable DC operating point under dynamic loading

Key Features

Feature	Design Value
Internally matched 50 Ω	Eliminates external input/output matching networks, reducing board space and tuning complexity
Low thermal resistance (0.30 K/W)	Enables compact thermal design with >300 W peak power handling and stable long-term reliability
Low output capacitance	Improves harmonic termination and bandwidth in Doherty combiner circuits, enhancing efficiency
Designed for low memory effects	Supports high-fidelity digital pre-distortion (DPD) with minimal convergence time and residual distortion
Integrated ESD protection	Meets CDM Class C2A and HBM Class 2 standards, enabling robust handling in production environments

Applications

Macrocell Base Station PA	Multi-Carrier W-CDMA Amplifier
Use Scenario: High-power RF final stage in outdoor macrocell base stations covering urban coverage zones. IC Role / Device Role / Timing Role: Asymmetric Doherty power transistor delivering 310 W peak output in 1930–1995 MHz band. Use Value: Achieves 42.5% drain efficiency at 56 W avg. output, reducing cooling requirements and OPEX in deployed sites.	Use Scenario: Linear PA module supporting concurrent 2-carrier W-CDMA signals with 8.4 dB PAR. IC Role / Device Role / Timing Role: Dual-path LDMOS transistor enabling wide instantaneous bandwidth and low ACPR (−33 dBc). Use Value: Maintains −33 dBc ACPR at 56 W while tolerating VSWR = 10:1, ensuring field reliability with real-world antennas.
LTE Band II Infrastructure PA	Digital Pre-Distorted Cellular Transmitter
Use Scenario: Final PA stage in LTE FDD eNodeB systems operating in PCS 1900 MHz band. IC Role / Device Role / Timing Role: High-efficiency Doherty transistor optimized for OFDMA signal characteristics and 20 MHz channel bandwidth. Use Value: Delivers 17 dB gain and 42.5% efficiency at 47.5 dBm, enabling simplified driver chain and lower system power draw.	Use Scenario: PA core in carrier-class transmitters using real-time DPD for spectral compliance. IC Role / Device Role / Timing Role: Low-memory-effect LDMOS transistor minimizing DPD model order and improving convergence stability. Use Value: Reduces DPD computational load by >30% versus legacy LDMOS, lowering FPGA resource usage and latency.

Macrocell Base Station PA

Multi-Carrier W-CDMA Amplifier

Use Scenario: High-power RF final stage in outdoor macrocell base stations covering urban coverage zones.

IC Role / Device Role / Timing Role: Asymmetric Doherty power transistor delivering 310 W peak output in 1930–1995 MHz band.

Use Value: Achieves 42.5% drain efficiency at 56 W avg. output, reducing cooling requirements and OPEX in deployed sites.

Use Scenario: Linear PA module supporting concurrent 2-carrier W-CDMA signals with 8.4 dB PAR.

IC Role / Device Role / Timing Role: Dual-path LDMOS transistor enabling wide instantaneous bandwidth and low ACPR (−33 dBc).

Use Value: Maintains −33 dBc ACPR at 56 W while tolerating VSWR = 10:1, ensuring field reliability with real-world antennas.

LTE Band II Infrastructure PA

Digital Pre-Distorted Cellular Transmitter

Use Scenario: Final PA stage in LTE FDD eNodeB systems operating in PCS 1900 MHz band.

IC Role / Device Role / Timing Role: High-efficiency Doherty transistor optimized for OFDMA signal characteristics and 20 MHz channel bandwidth.

Use Value: Delivers 17 dB gain and 42.5% efficiency at 47.5 dBm, enabling simplified driver chain and lower system power draw.

Use Scenario: PA core in carrier-class transmitters using real-time DPD for spectral compliance.

IC Role / Device Role / Timing Role: Low-memory-effect LDMOS transistor minimizing DPD model order and improving convergence stability.

Use Value: Reduces DPD computational load by >30% versus legacy LDMOS, lowering FPGA resource usage and latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BLF8G22LS-310	Same die, non-flanged SOT1258-2 package; no integrated flange grounding	Requires external thermal interface and RF grounding; less rugged under VSWR stress	Select when board-level thermal management allows discrete heatsinking and cost sensitivity outweighs ruggedness needs
BLF8G20LS-310AV	Identical SOT1258-1 package and pinout; 1900–2000 MHz spec, but 300 W peak rating vs. 310 W	Slightly lower PL(M) (300 W vs. 310 W); identical Doherty architecture and thermal performance	Choose for margin-based designs where 10 W peak headroom is acceptable and qualification reuse is prioritized

Compared with BLF8G22LS-310AV, BLF8G22LS-310 offers identical RF performance but lacks flange grounding-increasing layout complexity-while BLF8G20LS-310AV provides identical ruggedness and thermal behavior at 10 W lower peak power, easing thermal derating in constrained enclosures.

Availability

BLF8G22LS-310AV is available at Aetrix Electronics and suitable for macrocell base station PAs, multi-carrier W-CDMA amplifiers, and LTE Band II infrastructure requiring stable component supply, long-lifecycle support, and RoHS-compliant high-power RF transistors.

Supply support for BLF8G22LS-310AV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Ampleon Netherlands B.V. is a global leader in RF power semiconductors, spun off from NXP in 2015, specializing in LDMOS and GaN solutions for wireless infrastructure, broadcast, and industrial applications.

The BLF8G22LS-310AV belongs to Ampleon's Airfast® family of high-efficiency Doherty transistors, engineered specifically for next-generation 3G/4G base station amplifiers demanding high linearity, ruggedness, and thermal stability in dense urban deployments.

FAQ

What is the maximum continuous drain-source voltage rating for BLF8G22LS-310AV?

The BLF8G22LS-310AV has an absolute maximum drain-source voltage (V_DS) rating of 65 V, per IEC 60134 limiting values. This rating applies under all operating conditions and must not be exceeded to ensure device reliability. Operation at 28 V DC supply is standard for base station applications, providing sufficient headroom for transient voltage spikes and envelope tracking waveforms. The BLF8G22LS-310AV maintains safe operation within this limit across its full temperature range.

Does BLF8G22LS-310AV require external matching networks?

No, the BLF8G22LS-310AV is internally matched to 50 Ω at both input and output, eliminating the need for external matching components in standard Doherty reference designs. This simplifies PCB layout, reduces component count, and improves repeatability across production units. However, fine-tuning may be applied for specific load-pull optimization or harmonic suppression-particularly at the combiner node-using the recommended impedances published in Tables 9–14 of the datasheet.

What is the thermal resistance from junction to case for BLF8G22LS-310AV?

The BLF8G22LS-310AV has a typical thermal resistance from junction to case (R_th(j-c)) of 0.30 K/W, measured under CW conditions at 56 W output power and 80 °C case temperature. This value is consistent across 56 W and 89 W CW operation, confirming stable thermal performance at high power levels. Proper mechanical mounting-using specified torque and thermal interface material-is required to achieve this rating in end equipment.

How does BLF8G22LS-310AV perform under load mismatch conditions?

The BLF8G22LS-310AV is fully ruggedized for VSWR = 10:1 at all phase angles under 1-carrier W-CDMA conditions (PL = 90 W, PAR = 9.65 dB, f = 1930 MHz). This capability is validated per Ampleon's internal ruggedness test protocol and enables reliable operation with imperfect antenna systems or faulty RF cables. No derating or protection circuitry is required, making it suitable for unattended macrocell deployments where field maintenance is infrequent.

Is BLF8G22LS-310AV compliant with RoHS and REACH regulations?

Yes, the BLF8G22LS-310AV complies with Directive 2002/95/EC (RoHS) and meets REACH SVHC requirements as confirmed in Ampleon's official product declaration. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and all homogeneous materials are fully traceable. Full compliance documentation-including substance declarations and test reports-is available upon request from Aetrix Electronics for audit and certification purposes.

BLF8G22LS-310AVU Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: -

Packaging:: Tube

Product Status:: Active

Technology:: LDMOS

Configuration:: -

Frequency:: -

Gain:: -

Voltage - Test:: -

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: -

Power - Output:: -

Voltage - Rated:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

BLF8G22LS-310AVU FAQ

1.How can I place an order for BLF8G22LS-310AVU through Aetrix?

Please submit a Request for Quotation (RFQ) for BLF8G22LS-310AVU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BLF8G22LS-310AVU reliable?

The price and inventory of BLF8G22LS-310AVU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLF8G22LS-310AVU is usually 5 days.

3.What payment methods are accepted for BLF8G22LS-310AVU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLF8G22LS-310AVU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BLF8G22LS-310AVU?

BLF8G22LS-310AVU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BLF8G22LS-310AVU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BLF8G22LS-310AVU?

For technical support, including BLF8G22LS-310AVU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLF8G22LS-310AVU requirements.

6.How does Aetrix verify that BLF8G22LS-310AVU is sourced from the original manufacturer or authorized distributors?

All BLF8G22LS-310AVU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLF8G22LS-310AVU meets industry standards.

7.What is the process for return or replacement of BLF8G22LS-310AVU?

All BLF8G22LS-310AVU units undergo pre-shipment inspection (PSI). If there is an issue with BLF8G22LS-310AVU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BLF8G22LS-310AVU part is unused and in its original packaging.

Return procedure for BLF8G22LS-310AVU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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