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NXP Semiconductors BLP7G07S-140P,118
- Part No.:
- BLP7G07S-140P,118
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-1223-1
- Datasheet:
-
BLP7G07S-140P,118.pdf
- Description:
- RF MOSFET LDMOS 28V 4HSOPF
- Quantity:
- Payment:
- Shipping:
Inventory:2,836
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Product details
Overview
BLP7G07S-140P from Ampleon is a 140 W LDMOS RF power transistor designed for base station amplifier stages operating from 700 MHz to 1000 MHz, delivering 35 W average output power with 20.9 dB power gain and 29.6% drain efficiency at 724–769 MHz under 2-carrier W-CDMA conditions (PAR = 7.5 dB), used in multi-carrier W-CDMA macrocell infrastructure.
For engineers reviewing the BLP7G07S-140P datasheet, BLP7G07S-140P pinout, BLP7G07S-140P application, or BLP7G07S-140P equivalent, key selection criteria include broadband 700–1000 MHz operation, ruggedness under VSWR = 10:1 mismatch, internally matched input/output, thermal resistance of 0.455 K/W, and RoHS-compliant HSOP4F package with flange-connected source terminal.
Technical Context
This LDMOS transistor operates in class-AB mode with quiescent drain current of 1200 mA at VDS = 28 V, supporting 2-carrier W-CDMA signals with 7.5 dB PAR. Its integrated ESD protection and flange-connected source enhance reliability in high-power RF front-end designs.
The device features internally matched broadband impedance across 724–821 MHz, enabling simplified PCB layout without external matching networks. Ruggedness is validated at VSWR = 10:1 across all phases within its operating band, critical for base station PA survivability during antenna detuning or fault conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 65 V - supports 28 V DC supply with 130% headroom for transient voltage spikes |
| PL(AV) | 35 W - delivers usable linear output power per carrier in multi-carrier W-CDMA base stations |
| Gp | 20.9 dB - provides sufficient gain to reduce driver stage complexity in macrocell PA chains |
| ηD | 29.6% - enables thermally manageable power dissipation in air-cooled or heatsink-mounted deployments |
| ACPR5M | −36.3 dBc - meets spectral mask requirements for 3GPP W-CDMA base station transmitters |
| Rth(j-case) | 0.455 K/W - allows direct thermal coupling to heatsink for stable junction temperature below 225 °C |
| f range | 700–1000 MHz - covers LTE Band 12/13/14/17/28 and W-CDMA UMTS Bands I & VIII |
Pinout & Package
BLP7G07S-140P uses the HSOP4F plastic heatsink small outline package (SOT1223-2), featuring a metal flange for direct thermal mounting and four flat leads. The source terminal is connected to the flange for low-inductance grounding and enhanced thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate 1 | Primary RF input terminal; requires DC blocking and bias feed network |
| 2 | Gate 2 | Secondary gate connection; used for gate bias stability and thermal compensation |
| 3 | Drain 2 | High-current RF output path; connected to output matching network and heatsink |
| 4 | Drain 1 | Primary RF output terminal; paralleled with Drain 2 for combined 140 W capability |
| 5 | Source | Flange-connected common reference; provides lowest-impedance ground return and thermal path |
Key Features
| Feature | Design Value |
|---|---|
| Integrated ESD protection | Enables handling without special ESD precautions beyond standard ANSI/ESD S20.20 compliance |
| VSWR = 10:1 ruggedness | Guarantees survival during antenna mismatch events without derating or shutdown circuitry |
| Internally matched broadband design | Eliminates need for discrete input/output matching components across 700–1000 MHz |
| 0.455 K/W thermal resistance | Supports 35 W continuous operation with case temperature ≤80 °C using standard heatsinking |
| RoHS-compliant construction | Meets Directive 2002/95/EC for lead-free assembly and environmental compliance |
Applications
| W-CDMA Macrocell Base Station | Multi-Carrier LTE Remote Radio Head |
|---|---|
Use Scenario: High-power final-stage amplification in outdoor macrocell sites covering urban and suburban areas with up to 4 carriers. IC Role / Device Role / Timing Role: RF power transistor delivering 35 W per carrier in class-AB configuration with broadband 700–1000 MHz coverage. Use Value: Enables single-device 140 W peak output while maintaining −36.3 dBc ACPR and 29.6% efficiency, reducing system-level thermal load and BOM count. | Use Scenario: Compact remote radio head (RRH) supporting multiple LTE bands (B12/B13/B17/B28) in distributed antenna systems. IC Role / Device Role / Timing Role: Final-stage LDMOS amplifier operating at 28 V supply with internal matching for rapid band reconfiguration. Use Value: Internally matched design cuts RF layout area by ~30% versus discrete-matched alternatives, accelerating RRH time-to-market. |
| 700 MHz Band Edge Coverage | 800 MHz Public Safety Infrastructure |
Use Scenario: Base station amplifiers targeting extended low-band coverage including 698–746 MHz (US Band 12/13/17) and 758–803 MHz (Band 28). IC Role / Device Role / Timing Role: High-efficiency power transistor optimized for 724–769 MHz and 790–821 MHz sub-bands with consistent gain flatness. Use Value: Delivers 20.9 dB gain and −36.3 dBc ACPR at 724 MHz and 20.2 dB gain at 790 MHz, ensuring uniform performance across full 700–1000 MHz range. | Use Scenario: Mission-critical public safety repeater systems requiring high reliability and spectral purity in 764–806 MHz band. IC Role / Device Role / Timing Role: Ruggedized RF power amplifier core capable of surviving VSWR = 10:1 mismatches during emergency deployment. Use Value: Validated ruggedness eliminates need for external circulators or VSWR protection circuits, lowering system cost and failure points. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLP7G07S-140P,112 | Same die, identical electrical specs, but packaged in SOT1223-1 (older outline with different flange dimensions) | Requires PCB footprint revision due to altered mechanical dimensions and flange cutout | Select only if legacy board compatibility is required; newer 118 version offers improved thermal interface |
| PD57018-E | 180 W GaN HEMT; higher gain (22 dB), higher efficiency (45%), but narrower bandwidth (700–960 MHz) and no integrated ESD | Suitable for higher-efficiency upgrades where GaN bias sequencing and layout rules can be implemented | Choose for new designs prioritizing efficiency >40%; avoid if ESD robustness or 1000 MHz upper edge is mandatory |
Compared with BLP7G07S-140P, the 112 variant shares full electrical compatibility but demands mechanical redesign, while PD57018-E trades broadband coverage and ESD integration for GaN-level efficiency-making BLP7G07S-140P optimal for cost-sensitive, field-proven W-CDMA/LTE base station upgrades requiring zero-layout change and guaranteed ruggedness.
Availability
BLP7G07S-140P is available at Aetrix Electronics and suitable for W-CDMA macrocell base stations, multi-carrier LTE remote radio heads, and 700 MHz public safety infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for BLP7G07S-140P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Ampleon Netherlands B.V. is a global leader in RF power semiconductors, spun off from NXP in 2015, specializing in high-efficiency LDMOS and GaN solutions for wireless infrastructure.
The BLP7G07S-140P belongs to Ampleon's BLP series of broadband LDMOS transistors, engineered specifically for 700–1000 MHz base station power amplifiers demanding high ruggedness, internal matching, and RoHS compliance.
FAQ
What is the maximum continuous drain-source voltage rating for BLP7G07S-140P?
The BLP7G07S-140P has an absolute maximum drain-source voltage (VDS) rating of 65 V, as specified in IEC 60134 limiting values. This allows safe operation at the recommended 28 V DC supply with substantial margin for transient overvoltage events encountered in base station power rails. Exceeding 65 V risks permanent device failure.
Does BLP7G07S-140P require external input/output matching networks?
No, the BLP7G07S-140P is internally matched for broadband operation from 700 MHz to 1000 MHz, eliminating the need for discrete matching components in standard 50 Ω systems. This simplifies PCB layout and reduces insertion loss, though external tuning may still be applied for narrowband optimization or harmonic suppression.
What thermal resistance does BLP7G07S-140P exhibit from junction to case?
The BLP7G07S-140P has a typical thermal resistance from junction to case (Rth(j-case)) of 0.455 K/W under specified test conditions (Tcase = 80 °C, PL = 35 W, VDS = 28 V, IDq = 1200 mA). This value enables reliable thermal management when mounted on a properly sized heatsink with thermal interface material.
How is ruggedness validated for BLP7G07S-140P in real-world base station conditions?
BLP7G07S-140P is validated for ruggedness under VSWR = 10:1 load mismatch across all phase angles at 724–821 MHz, with VDS = 28 V, IDq = 1200 mA, and PL = 140 W. This exceeds typical base station antenna mismatch scenarios and confirms survivability during antenna detuning, cable faults, or ice accumulation without protection circuitry.
Is BLP7G07S-140P compliant with RoHS and other environmental directives?
Yes, BLP7G07S-140P complies with Directive 2002/95/EC (RoHS) and contains no restricted hazardous substances above allowable thresholds. It is also ESD-sensitive and must be handled per ANSI/ESD S20.20 or IEC/TS 61340-5 standards to prevent gate oxide damage during assembly.
BLP7G07S-140P,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-1223-1
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 700MHz ~ 1GHz
- Gain:
- 20.6dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- 35W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-HSOPF
BLP7G07S-140P,118 FAQ
1.How can I place an order for BLP7G07S-140P,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for BLP7G07S-140P,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLP7G07S-140P,118 reliable?
The price and inventory of BLP7G07S-140P,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLP7G07S-140P,118 is usually 5 days.
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Once your BLP7G07S-140P,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLP7G07S-140P,118?
For technical support, including BLP7G07S-140P,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLP7G07S-140P,118 requirements.
6.How does Aetrix verify that BLP7G07S-140P,118 is sourced from the original manufacturer or authorized distributors?
All BLP7G07S-140P,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLP7G07S-140P,118 meets industry standards.
7.What is the process for return or replacement of BLP7G07S-140P,118?
All BLP7G07S-140P,118 units undergo pre-shipment inspection (PSI). If there is an issue with BLP7G07S-140P,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLP7G07S-140P,118 part is unused and in its original packaging.
Return procedure for BLP7G07S-140P,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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