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NXP Semiconductors BLP8G10S-45PGJ
- Part No.:
- BLP8G10S-45PGJ
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-1223-1
- Datasheet:
-
BLP8G10S-45PGJ.pdf
- Description:
- RF MOSFET LDMOS 4HSOPF
- Quantity:
- Payment:
- Shipping:
Inventory:6,687
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Product details
Overview
BLP8G10S-45PGJ from Ampleon is a dual-path, 45 W LDMOS power transistor optimized for base station RF power amplification in the 700–1000 MHz band. It delivers 20.8 dB power gain, 19.8% drain efficiency, and −49 dBc adjacent channel power ratio (ACPR) at 960 MHz under 2-carrier W-CDMA conditions (PAR = 8.4 dB), supporting high-linearity cellular infrastructure applications.
For engineers reviewing the BLP8G10S-45PGJ datasheet, BLP8G10S-45PGJ pinout, BLP8G10S-45PGJ application, or BLP8G10S-45PGJ equivalent, this page provides verified package mapping (SOT1224-4), thermal resistance (0.85 K/W), ruggedness rating (VSWR = 10:1), ESD classification (CDM Class C2A), and RF performance across W-CDMA/LTE/GSM bands - all critical for PA stage design and reliability validation.
Technical Context
The BLP8G10S-45PGJ operates in common-source class-AB configuration with fixed bias (IDq = 224 mA) and is characterized for broadband operation from 700 MHz to 1000 MHz. Its dual-path architecture enables independent gate control (pins 3 and 4) and shared source (pin 5), supporting balanced or asymmetrical load-pull tuning per path.
Thermal management is enabled by an exposed metal heatsink flange (pin-connected to source), with junction-to-case thermal resistance of 0.85 K/W at 5 W dissipation. Ruggedness testing confirms stable operation under VSWR = 10:1 mismatch at 728 MHz, 28 V DS, and 25 W output - essential for deployed macrocell amplifier robustness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 700–1000 MHz - supports full-band coverage for LTE Band 12/13/14/17/28 and W-CDMA UMTS 850/900 MHz deployments |
| Output Power (PL) | 2.5 W typical per section at 960 MHz - scalable via parallel operation; rated for 45 W total device capability |
| Power Gain (Gp) | 20.8 dB typical - enables reduced driver stage complexity and higher system-level PAE |
| Drain Efficiency (ηD) | 19.8% typical at 2.5 W - balances linearity and thermal load in multi-carrier W-CDMA operation |
| ACPR (5 MHz) | −49 dBc typical - meets stringent spectral mask requirements for 3GPP-compliant base stations |
| Rth(j-case) | 0.85 K/W - allows direct mounting to heatsink without thermal interface material degradation at Tcase ≤ 150 °C |
| VSWR Ruggedness | 10:1 at all phases, 728 MHz - eliminates need for external circulators or isolators in antenna mismatch scenarios |
Pinout & Package
BLP8G10S-45PGJ uses the SOT1224-4 plastic heatsink small outline package with exposed metal flange (plated matte tin) for low-thermal-resistance mounting. The 5-terminal layout integrates dual drain paths and separate gate inputs for independent RF path control.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain 1 | RF power output terminal for Path A; connected directly to heatsink flange for thermal conduction and RF grounding |
| 2 | Drain 2 | RF power output terminal for Path B; electrically isolated from Pin 1 but thermally coupled via shared flange |
| 3 | Gate 2 | Control input for Path B; requires DC blocking and impedance-matched RF feed for stable class-AB bias |
| 4 | Gate 1 | Control input for Path A; independent of Gate 2 to enable dual-input modulation or redundancy schemes |
| 5 | Source | Common source node and thermal reference; internally bonded to flange - must be grounded at PCB for thermal and RF stability |
Key Features
| Feature | Design Value |
|---|---|
| Dual-path LDMOS architecture | Enables two independent RF amplification paths in single package - reduces board area and inter-stage coupling vs. discrete solutions |
| Broadband 700–1000 MHz operation | Eliminates need for band-specific PA modules; supports multi-standard base stations (GSM/LTE/W-CDMA) with single BOM item |
| Integrated ESD protection | CDM Class C2A (500 V) and HBM Class 1C (1000 V) - reduces external protection circuitry and improves handling yield in SMT lines |
| High ruggedness (VSWR = 10:1) | Withstands worst-case antenna mismatch without desaturation or latch-up - critical for outdoor macrocell reliability |
| Excellent thermal stability | Rth(j-case) = 0.85 K/W + Tj max = 225 °C - sustains continuous operation at Tcase = 150 °C in high-ambient environments |
Applications
| Macrocell Base Station PA | Multi-band LTE Remote Radio Head |
|---|---|
Use Scenario: High-power final-stage amplification in 4T4R MIMO macrocell base stations operating across Bands 12/13/14/17/28. IC Role / Device Role / Timing Role: Dual-path RF power transistor delivering 45 W combined output with linearized 2-carrier W-CDMA signal handling. Use Value: Reduces component count versus discrete dual-transistor designs while maintaining −49 dBc ACPR and VSWR = 10:1 ruggedness for field-deployed reliability. |
Use Scenario: Compact, thermally efficient PA module in remote radio heads requiring support for LTE FDD and TDD bands between 700–960 MHz. IC Role / Device Role / Timing Role: Dual-path LDMOS transistor enabling independent calibration and digital predistortion per RF chain in distributed antenna systems. Use Value: Achieves 20.8 dB gain and 19.8% efficiency at 960 MHz - minimizes cooling requirements and extends RRH service life in uncontrolled outdoor enclosures. |
| GSM/EDGE Evolution Node | W-CDMA UMTS 850/900 MHz BTS |
Use Scenario: Upgraded GSM base transceiver station supporting EDGE modulation with higher peak power demands. IC Role / Device Role / Timing Role: Final-stage power amplifier transistor delivering broadband 700–1000 MHz coverage with integrated ESD protection for factory SMT assembly. Use Value: Maintains >18% drain efficiency at 2.5 W output while surviving 1000 V HBM ESD events - lowers test failure rate and field return risk. |
Use Scenario: Wideband Code Division Multiple Access base station operating in UMTS Band V (824–849 MHz) and Band VIII (880–915 MHz). IC Role / Device Role / Timing Role: Dual-path LDMOS transistor configured for carrier aggregation with independent gate biasing to optimize ACLR per channel. Use Value: Delivers −49 dBc ACPR at 960 MHz with 0.85 K/W thermal resistance - enables compact heatsink design and stable long-term operation at Tcase = 85 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BLP8G10S-45P | SOT1223-4 package (slightly larger footprint); identical electrical specs and thermal resistance (0.85 K/W) | Same RF performance but requires PCB layout revision due to different lead pitch and flange geometry | Select BLP8G10S-45P only if legacy SOT1223-4 footprint is already validated; BLP8G10S-45PGJ offers improved manufacturability with SOT1224-4's tighter lead coplanarity (0.1 mm max) |
| MRF6VP11KHR6 | Single-path 120 W GaN HEMT; higher gain (22 dB), higher efficiency (65%), but narrower bandwidth (800–1000 MHz only) | Requires redesign for single-ended topology and active bias control; not drop-in compatible | Choose MRF6VP11KHR6 only for new high-efficiency designs targeting >60% PAE; BLP8G10S-45PGJ remains optimal for cost-sensitive, dual-path, broadband 700–1000 MHz upgrades |
Compared with BLP8G10S-45P, the BLP8G10S-45PGJ offers identical RF performance in a more manufacturable SOT1224-4 package, while MRF6VP11KHR6 trades dual-path flexibility and broadband coverage for higher efficiency in narrowband GaN-based architectures - making BLP8G10S-45PGJ the preferred choice for incremental LTE/W-CDMA base station upgrades.
Availability
BLP8G10S-45PGJ is available at Aetrix Electronics and suitable for macrocell base station PA, remote radio head (RRH), GSM/EDGE evolution node, and W-CDMA UMTS 850/900 MHz BTS applications requiring stable component supply and long-term production continuity.
Supply support for BLP8G10S-45PGJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Ampleon Netherlands B.V. is a global leader in RF power semiconductors, spun off from NXP in 2015, specializing in LDMOS and GaN solutions for cellular infrastructure, broadcast, and industrial heating.
The BLP8G10S-45PGJ belongs to Ampleon's Airfast® family of high-reliability LDMOS transistors designed specifically for 4G/5G macrocell and small cell base station power amplifiers operating in sub-1 GHz bands.
FAQ
What is the maximum junction temperature rating for BLP8G10S-45PGJ?
The BLP8G10S-45PGJ has a maximum junction temperature (Tj) rating of 225 °C, as specified in Table 4 (Limiting Values) of the official Ampleon datasheet Rev. 4. This high Tj rating supports reliable operation in thermally constrained macrocell base station enclosures where case temperatures may reach 150 °C, provided thermal resistance from junction to case (Rth(j-case)) remains at 0.85 K/W under defined test conditions.
Does BLP8G10S-45PGJ support dual-carrier W-CDMA operation?
Yes, BLP8G10S-45PGJ is fully characterized for 2-carrier W-CDMA operation at 960 MHz with 5 MHz carrier spacing, PAR = 8.4 dB, and 0.01% CCDF probability. Per Table 1 and Table 7, it delivers 20.8 dB power gain, 19.8% drain efficiency, and −49 dBc ACPR under these conditions - meeting 3GPP TS 25.104 requirements for base station transmitter conformance.
What is the gate-source threshold voltage range for BLP8G10S-45PGJ?
The gate-source threshold voltage (VGS(th)) for BLP8G10S-45PGJ is specified as 1.5 V (min), 1.9 V (typ), and 2.3 V (max) at VDS = 10 V and ID = 40 mA (Table 6, DC Characteristics). This tight 0.8 V span ensures consistent turn-on behavior across production lots and simplifies bias network design for class-AB operation at IDq = 224 mA.
How is thermal management implemented in the BLP8G10S-45PGJ package?
Thermal management in BLP8G10S-45PGJ relies on direct conduction from the silicon die to the exposed metal heatsink flange (connected to pin 5, source), achieving Rth(j-case) = 0.85 K/W at 5 W dissipation. The SOT1224-4 package features matte tin-plated leads and flange, enabling low-impedance solder attachment to copper heatsinks without thermal interface materials - critical for sustained operation at Tcase ≤ 150 °C.
Is BLP8G10S-45PGJ RoHS compliant?
Yes, BLP8G10S-45PGJ is RoHS compliant. Ampleon explicitly states RoHS compliance in Section 1.2 ("Features and benefits") of the product data sheet and provides full compliance documentation on the Ampleon website under product details. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above EU RoHS Directive limits.
BLP8G10S-45PGJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-1223-1
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 700MHz ~ 1GHz
- Gain:
- 21dB
- Voltage - Test:
- -
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- -
- Power - Output:
- 45W
- Voltage - Rated:
- 28 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-HSOPF
BLP8G10S-45PGJ FAQ
1.How can I place an order for BLP8G10S-45PGJ through Aetrix?
Please submit a Request for Quotation (RFQ) for BLP8G10S-45PGJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BLP8G10S-45PGJ reliable?
The price and inventory of BLP8G10S-45PGJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BLP8G10S-45PGJ is usually 5 days.
3.What payment methods are accepted for BLP8G10S-45PGJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BLP8G10S-45PGJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BLP8G10S-45PGJ?
BLP8G10S-45PGJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BLP8G10S-45PGJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BLP8G10S-45PGJ?
For technical support, including BLP8G10S-45PGJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BLP8G10S-45PGJ requirements.
6.How does Aetrix verify that BLP8G10S-45PGJ is sourced from the original manufacturer or authorized distributors?
All BLP8G10S-45PGJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BLP8G10S-45PGJ meets industry standards.
7.What is the process for return or replacement of BLP8G10S-45PGJ?
All BLP8G10S-45PGJ units undergo pre-shipment inspection (PSI). If there is an issue with BLP8G10S-45PGJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLP8G10S-45PGJ part is unused and in its original packaging.
Return procedure for BLP8G10S-45PGJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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