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NXP Semiconductors BLS7G2933S-150,112
- Part No.:
- BLS7G2933S-150,112
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- SOT-922-1
- Datasheet:
-
BLS7G2933S-150,112.pdf
- Description:
- RF MOSFET LDMOS 32V CDFM2
- Quantity:
- Payment:
- Shipping:
Inventory:30
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Product details
Overview
BLS7G2933S-150 from NXP Semiconductors is a 150 W LDMOS RF power transistor designed for pulsed S-band radar amplifiers operating from 2.9 GHz to 3.3 GHz, delivering 13.5 dB power gain and 47 % drain efficiency at 32 V supply and 100 mA quiescent drain current in class-AB pulsed operation.
For engineers reviewing the BLS7G2933S-150 datasheet, BLS7G2933S-150 pinout, BLS7G2933S-150 application, or BLS7G2933S-150 equivalent, this device requires attention to thermal impedance (0.16 K/W at 300 μs pulse), ruggedness under 10:1 VSWR mismatch, and internally matched 50 Ω input/output impedance across its operational band.
Technical Context
This LDMOS transistor operates in pulsed RF mode with 300 μs pulse width and 10 % duty cycle, optimized for class-AB linear amplification in radar transmitters. Its gate-source threshold voltage is 1.8 V (typ), drain-source breakdown exceeds 65 V, and forward transconductance is 12.7 S at 9 A drain current.
The device features integrated ESD protection, ceramic earless flanged cavity packaging (SOT922-1) with flange-connected drain terminal, and is characterized for stable performance up to 200 °C junction temperature. Thermal transient impedance is specified down to 0.12 K/W for short pulses, enabling high peak-power radar burst handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2.9 GHz to 3.3 GHz - fully specified broadband operation for S-band radar systems without external tuning. |
| Output Power | 150 W - peak pulsed RF output power at 32 V, 100 mA IDq, 300 μs/10 % pulse conditions. |
| Power Gain | 13.5 dB - small-signal to large-signal gain enabling compact driver stage design in radar PA chains. |
| Drain Efficiency | 47 % - high energy conversion efficiency reduces heatsink requirements and improves system thermal margin. |
| Thermal Impedance | 0.16 K/W - junction-to-mounting-base transient thermal resistance at 300 μs/10 % pulse, critical for radar burst thermal management. |
| Ruggedness | VSWR = 10:1 - withstands full-phase load mismatch under rated RF conditions, eliminating need for external circulators in many radar designs. |
| Input Return Loss | −5.5 dB (typ) - internally matched for 50 Ω source impedance, minimizing external matching network complexity. |
Pinout & Package
Ceramic earless flanged cavity package (SOT922-1); flange is electrically connected to drain terminal and serves as primary thermal and RF ground path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Main RF power output node; directly bonded to flange for low-inductance, low-thermal-resistance path to heatsink. |
| 2 | Gate | RF input control terminal; requires DC blocking and bias network; protected by integrated ESD structure. |
| 3 | Source | RF return and bias reference node; externally connected to ground plane with minimal inductance for stability. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched | 50 Ω input/output impedance across 2.9–3.3 GHz - eliminates discrete matching components and reduces PCB layout sensitivity. |
| High ruggedness | Rated for 10:1 VSWR mismatch at full RF power - enables direct antenna coupling in pulsed radar without isolators. |
| Thermal stability | Stable gain and efficiency over 25–85 °C case temperature - ensures consistent radar pulse fidelity across environmental extremes. |
| ESD protection | Integrated HBM > 2 kV - protects gate during assembly and handling without requiring external TVS diodes. |
| Broadband operation | Flat gain and power response across 400 MHz bandwidth - supports frequency-agile radar waveforms without retuning. |
Applications
| Weather Radar Transmitter | Military Surveillance Radar |
|---|---|
Use Scenario: Pulsed S-band transmitter in ground-based weather monitoring systems requiring high peak power and Doppler resolution. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 150 W pulses at 2.9–3.3 GHz with 300 μs duration and 10 % duty cycle. Use Value: High 47 % efficiency minimizes cooling demands in unattended remote installations; ruggedness ensures reliability amid antenna VSWR variations caused by precipitation. |
Use Scenario: Mobile tactical radar platform requiring compact, high-reliability RF power amplification in contested electromagnetic environments. IC Role / Device Role / Timing Role: Class-AB pulsed amplifier in solid-state T/R module, operating at 32 V with precise pulse timing control. Use Value: Internally matched design reduces component count and board area; 10:1 VSWR tolerance maintains operation during antenna motion or partial obstruction. |
| Maritime Navigation Radar | Ground-Based Air Defense Radar |
Use Scenario: Shipboard navigation radar operating in harsh salt-mist environments with strict size and thermal constraints. IC Role / Device Role / Timing Role: High-efficiency final amplifier stage driving slotted waveguide array, pulsed at 300 μs/10 %. Use Value: Ceramic SOT922-1 package provides hermetic sealing and superior thermal conduction; 0.16 K/W thermal impedance sustains repeated pulse bursts without derating. |
Use Scenario: Long-range air defense radar requiring high peak power, wide instantaneous bandwidth, and field-deployable reliability. IC Role / Device Role / Timing Role: S-band power amplifier in modular transmitter chain, supporting frequency-hopping waveforms across 2.9–3.3 GHz. Use Value: Flat 13.5 dB gain and −5.5 dB input return loss across full band simplify driver design; excellent thermal stability maintains calibration over extended operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar S-band radar power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CGHV14150F | 150 W GaN HEMT; higher gain (16 dB) and efficiency (60 %); requires external gate bias sequencing and more complex thermal interface. | Higher-frequency extension to 3.5 GHz; better suited for multi-band or future-proofed radar upgrades. | Select CGHV14150F when higher efficiency and bandwidth justify added gate drive complexity and thermal design effort. |
| MRF101AN | 120 W LDMOS; lower output power and gain (12 dB); wider 2.7–3.5 GHz range; same SOT922-1 package and pinout. | Lower-cost option for medium-range radar where 150 W is not required; compatible with existing PCB layouts. | Select MRF101AN for cost-sensitive or lower-power radar variants where footprint and bias compatibility are prioritized over peak power. |
Compared with BLS7G2933S-150, CGHV14150F delivers significantly higher efficiency but demands more sophisticated gate control, while MRF101AN offers pin-compatible drop-in replacement at reduced power-making it suitable for design scaling without layout change.
Availability
BLS7G2933S-150 is available at Aetrix Electronics and suitable for weather radar transmitters, military surveillance systems, maritime navigation radars, and ground-based air defense platforms requiring stable component supply and long-term obsolescence management.
Supply support for BLS7G2933S-150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.
The BLS7G2933S-150 belongs to NXP's high-power RF LDMOS transistor family, engineered specifically for rugged, high-efficiency pulsed radar amplifiers operating in the S-band frequency range.
FAQ
What is the maximum continuous drain current rating for the BLS7G2933S-150?
The BLS7G2933S-150 has a maximum limiting value of 33 A for drain current (ID), as defined in the Absolute Maximum Ratings table. This rating applies under pulsed conditions with appropriate thermal management; continuous DC operation is not intended, and the device is specified exclusively for pulsed RF use with 300 μs pulse width and 10 % duty cycle per its datasheet characterization.
Does the BLS7G2933S-150 require external matching networks for 50 Ω systems?
No, the BLS7G2933S-150 is internally matched for 50 Ω input and output impedance across its 2.9–3.3 GHz operating band. The datasheet confirms typical input return loss of −5.5 dB and provides measured ZS/ZL impedance data, enabling direct integration into standard 50 Ω RF layouts without discrete matching components-though fine-tuning may be applied for specific system optimization.
What is the thermal resistance from junction to mounting base for the BLS7G2933S-150 at 300 μs pulse width?
At 300 μs pulse width and 10 % duty cycle, the transient thermal impedance (Zth(j-mb)) of the BLS7G2933S-150 is 0.16 K/W, as specified in Table 5 of the datasheet. This value is measured with Tcase = 85 °C and PL = 150 W, and reflects the device's ability to rapidly dissipate heat during radar pulse bursts.
Is the BLS7G2933S-150 RoHS compliant?
Yes, the BLS7G2933S-150 is compliant with Directive 2002/95/EC (RoHS), as explicitly stated in Section 1.2 "Features and benefits" of the datasheet. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above allowable thresholds.
Can the BLS7G2933S-150 operate safely under severe load mismatch conditions?
Yes-the BLS7G2933S-150 is characterized for ruggedness under VSWR = 10:1 mismatch across all reflection phases at full operating conditions: VDS = 32 V, IDq = 100 mA, PL = 150 W, tp = 300 μs, δ = 10 %. This capability is verified per Section 7.1 and allows deployment in radar systems without external circulators or isolators in many configurations.
BLS7G2933S-150,112 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOT-922-1
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.9GHz ~ 3.3GHz
- Gain:
- 13.5dB
- Voltage - Test:
- 32 V
- Current Rating (Amps):
- 4.2µA
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 150W
- Voltage - Rated:
- 60 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- CDFM2
BLS7G2933S-150,112 FAQ
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7.What is the process for return or replacement of BLS7G2933S-150,112?
All BLS7G2933S-150,112 units undergo pre-shipment inspection (PSI). If there is an issue with BLS7G2933S-150,112, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BLS7G2933S-150,112 part is unused and in its original packaging.
Return procedure for BLS7G2933S-150,112:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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