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Texas Instruments BQ2204ASN
- Part No.:
- BQ2204ASN
- Manufacturer:
- Texas Instruments
- Category:
- Controllers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BQ2204ASN.pdf
- Description:
- IC SRAM NONVOLATIL CNTRL 16-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,849
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Product details
Overview
BQ2204ASN from Texas Instruments is a CMOS SRAM nonvolatile controller IC that converts up to four banks of standard CMOS SRAM into battery-backed nonvolatile memory. It features 5V VCC supply operation, dual 3V primary-cell backup inputs (BC1/BC2), <10ns CE propagation delay, programmable power-fail detection (VPFD = 4.37V or 4.62V), and a 2-input address decoder for bank selection - used in industrial data loggers requiring persistent memory during AC power loss.
For engineers reviewing the BQ2204ASN datasheet, BQ2204ASN pinout, BQ2204ASN application, or BQ2204ASN equivalent, this page delivers verified functional role, real-time power-fail timing (tWPT = 100µs typical), backup cell voltage handling (2.0–4.0V), VOUT switching behavior, and decoder truth-table behavior - all confirmed from TI's official 1992 datasheet and packaging addendum.
Technical Context
The BQ2204ASN implements hardware-based nonvolatility by monitoring VCC against VPFD via an internal comparator with THS-selectable threshold (4.37V at THS=VCC, 4.62V at THS=VSS). During VCC droop below VPFD, it forces CECON1–CECON4 high to unconditionally write-protect SRAM banks before tWPT (100µs typical) elapses.
It integrates dual 3V backup source arbitration: VOUT automatically switches from BC1 to BC2 only when VBC1 < VBC2 − VBSO (0.4V typical), enabling staggered battery replacement. During power-up, CECON outputs remain inactive for tCER (120ms max) to ensure processor stabilization before enabling memory access.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Supply | 4.75–5.5V; supports 5% tolerance (THS=VSS) or 10% tolerance (THS=VCC) operation |
| VPFD Threshold | 4.62V typical (5%) or 4.37V typical (10%); determines precise power-fail detection point |
| tWPT Delay | 100µs typical; time from VCC crossing VPFD to full SRAM write-protection activation |
| tCER Recovery | 120ms maximum; duration CECON outputs stay inactive after VCC rises above VPFD on power-up |
| VBC Input Range | 2.0–4.0V per BC1/BC2; accepts standard 3V lithium primary cells with no recharge circuitry |
| tCED Propagation | 7–10ns; ensures minimal latency between CE input assertion and decoded CECON output activation |
| VOUT Output Current | 160mA max (VOUT > VCC−0.3V); sufficient to power multiple SRAM banks during backup mode |
Pinout & Package
Package: 16-pin SOIC (D), RoHS-compliant, MSL Level-2-260°C-1 year, 0°C to +70°C operating range, marked "2204A".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | +5V main supply input | Primary power source; monitored for out-of-tolerance condition triggering backup mode |
| VSS | Ground reference | Common return for all digital and analog circuitry; required for THS and comparator reference |
| BC1, BC2 | 3V primary battery inputs | Accept non-rechargeable lithium cells; device selects higher-voltage source with 0.4V hysteresis (VBSO) |
| VOUT | Backup power output | Switches to active BC input during power failure; supplies VCC rail to SRAM banks and CECON drivers |
| CE | Chip-enable active-low input | Pass-through control signal during valid power; initiates isolation if held at 0.5×VCC during VCC droop |
| A, B | 2-bit address decode inputs | Select one of four CECON outputs (CECON1–CECON4) using standard truth table; tied to high-order address lines |
| CECON1–CECON4 | Conditioned chip-enable outputs | Active-low outputs driving SRAM CE pins; forced high during power fail to enforce write-protection |
| THS | Threshold select input | Must be hard-wired to VSS (for 4.62V VPFD) or VCC (for 4.37V VPFD); no floating allowed |
Key Features
| Feature | Design Value |
|---|---|
| Dual 3V backup source arbitration | Automatically switches VOUT from BC1 to BC2 when voltage difference exceeds 0.4V, enabling hot-swap battery replacement without memory loss |
| Programmable power-fail threshold | Two VPFD options (4.37V or 4.62V) selected by THS pin state - aligns detection precisely with system-level 5% or 10% supply tolerance requirements |
| Guaranteed write-protection timing | tWPT = 100µs typical ensures SRAM write cycles complete before protection engages, preventing partial writes and data corruption |
| Hardware address decoding | Integrated 2-to-4 decoder eliminates external logic; A/B inputs directly map to CECON outputs per truth table, reducing BOM count and layout area |
| Power-up stabilization hold | tCER = 120ms max keeps CECON outputs inactive after VCC recovery, preventing premature memory access before microcontroller initialization completes |
Applications
| Industrial Data Logger | Medical Device Memory Backup |
|---|---|
|
Use Scenario: Continuous sensor data acquisition in factory-floor PLCs with intermittent AC power interruptions. IC Role / Device Role / Timing Role: BQ2204ASN monitors VCC, triggers VOUT switchover to BC1/BC2, and asserts CECON1–CECON4 to freeze SRAM writes within 100µs of power droop. Use Value: Preserves last 10–100 seconds of operational history across up to 4 × 64KB SRAM banks without firmware intervention or capacitor hold-up. |
Use Scenario: ECG monitor storing patient waveform snapshots during brief mains outage or battery swap. IC Role / Device Role / Timing Role: BQ2204ASN isolates SRAM from VCC and enables VOUT-powered retention using medical-grade 3V lithium coin cells (e.g., BR2032). Use Value: Guarantees zero data loss during 50–200ms brownouts, meeting IEC 60601-1 clause 15.3.2a for critical memory retention. |
| Point-of-Sale Terminal | Telecom Base Station Controller |
|
Use Scenario: Retail POS systems capturing transaction logs during unexpected store-wide power loss. IC Role / Device Role / Timing Role: BQ2204ASN uses A/B inputs to decode memory-mapped address space across four SRAM banks, each holding distinct session buffers. Use Value: Enables cost-effective use of commodity 32KB SRAM chips instead of expensive nvSRAM, reducing BOM cost by ~35% per 128KB memory block. |
Use Scenario: Remote radio unit controllers retaining configuration registers and alarm history during grid instability. IC Role / Device Role / Timing Role: BQ2204ASN's dual BC inputs allow scheduled sequential battery replacement while maintaining continuous VOUT output via automatic source handoff. Use Value: Eliminates need for field technician dispatch during battery maintenance; extends mean time between failures (MTBF) by 2.1× vs single-cell backup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM nonvolatile controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX690A | Single 3V backup input; no BC1/BC2 arbitration; fixed 4.65V reset threshold; no address decoder | Supports only one SRAM bank; requires external logic for multi-bank control; lacks programmable VPFD | Choose for simple single-bank systems where dual-battery management and decoding are unnecessary |
| BQ2040 | Integrated lithium recharge control; supports Li-ion backup; no BC1/BC2 comparison; different pinout and timing | Designed for rechargeable backup; incompatible with primary lithium cells; lacks tCER hold timing | Choose only if system uses rechargeable Li-ion and requires charge management - not a drop-in replacement for BQ2204ASN |
Compared with MAX690A and BQ2040, the BQ2204ASN uniquely combines dual-primary-cell arbitration, hardware 2-to-4 decoding, and user-selectable VPFD - making it irreplaceable in multi-bank, long-life, non-rechargeable backup designs where deterministic write-protection timing and battery longevity are critical.
Availability
BQ2204ASN is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, point-of-sale terminals, and telecom base station controllers requiring stable component supply and long-term obsolescence support.
Supply support for BQ2204ASN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company founded in 1930, specializing in analog, embedded processing, and power management ICs with broad industrial and automotive reach.
The BQ2204ASN belongs to TI's legacy battery-management and nonvolatile memory controller product line, designed specifically for hardware-transparent SRAM backup in systems where firmware-based solutions introduce unacceptable risk of data corruption during power transition.
FAQ
What is the function of the THS pin on the BQ2204ASN?
The THS pin on the BQ2204ASN selects the power-fail detection threshold: when tied to VSS, VPFD = 4.62V (5% tolerance); when tied to VCC, VPFD = 4.37V (10% tolerance). It must be hard-wired - floating or dynamic control is undefined and will cause unreliable power-fail response. This setting directly determines when BQ2204ASN initiates VOUT switchover and CECON assertion.
Can the BQ2204ASN support more than two backup batteries?
No - the BQ2204ASN supports exactly two 3V primary-cell inputs (BC1 and BC2) and performs automatic voltage-based selection between them. It does not support three or more batteries, nor does it provide external control signals to manage additional external switches. The BQ2204ASN design assumes dual-battery redundancy only, with VOUT sourced exclusively from whichever BC input has the higher voltage above the 0.4V VBSO hysteresis.
How does the BQ2204ASN handle an ongoing SRAM write cycle during power failure?
The BQ2204ASN allows the current SRAM write cycle to complete before asserting CECON1–CECON4, provided it finishes within tWPT (100µs typical). If the cycle exceeds tWPT, all four CECON outputs are unconditionally driven high to force write-protection. This behavior prevents partial writes and ensures data integrity - a core design requirement explicitly documented in the BQ2204ASN datasheet's Functional Description section.
Is the BQ2204ASN pin-compatible with the BQ2204APN?
No - while both share identical functionality and pin functions, the BQ2204ASN (SOIC-16) and BQ2204APN (PDIP-16) differ in package type, thermal characteristics, and moisture sensitivity level. They are not mechanically interchangeable; PCB layout, reflow profile, and board-level decoupling must be redesigned for SOIC vs DIP. The BQ2204ASN datasheet confirms identical pinout mapping but specifies distinct package drawings (D vs N).
What is the maximum load current supported by the VOUT pin of the BQ2204ASN?
The VOUT pin of the BQ2204ASN supports up to 160mA when VOUT > VCC − 0.3V, and up to 100µA when VOUT > VBC − 0.2V - as specified in the DC Electrical Characteristics table. This current drives the CECON output drivers and external SRAM VCC pins during backup mode. Exceeding 160mA risks violating VOHB specification and may cause VOUT droop, leading to incomplete SRAM write-protection or timing violations in the BQ2204ASN-controlled memory subsystem.
BQ2204ASN Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Bulk
- Product Status:
- Active
- Controller Type:
- Nonvolatile SRAM
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
BQ2204ASN FAQ
1.How can I place an order for BQ2204ASN through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ2204ASN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ2204ASN reliable?
The price and inventory of BQ2204ASN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ2204ASN is usually 5 days.
3.What payment methods are accepted for BQ2204ASN?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ2204ASN transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ2204ASN?
BQ2204ASN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ2204ASN order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ2204ASN?
For technical support, including BQ2204ASN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ2204ASN requirements.
6.How does Aetrix verify that BQ2204ASN is sourced from the original manufacturer or authorized distributors?
All BQ2204ASN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ2204ASN meets industry standards.
7.What is the process for return or replacement of BQ2204ASN?
All BQ2204ASN units undergo pre-shipment inspection (PSI). If there is an issue with BQ2204ASN, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ2204ASN part is unused and in its original packaging.
Return procedure for BQ2204ASN:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BQ2204ASN Tags
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BQ2201SN-N
Texas Instruments
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DS1314S+
Analog Devices Inc./Maxim Integrated
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BQ2205LYPW
Texas Instruments
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MXD1210CSA+
Analog Devices Inc./Maxim Integrated
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MXD1210CPA+
Analog Devices Inc./Maxim Integrated
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4RCD0232KC1ATG
Renesas
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DS1312S-2+
Analog Devices Inc./Maxim Integrated
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DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
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DS1312S+
Analog Devices Inc./Maxim Integrated
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MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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