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Texas Instruments BQ2204ASN-NTR
- Part No.:
- BQ2204ASN-NTR
- Manufacturer:
- Texas Instruments
- Category:
- Controllers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BQ2204ASN-NTR.pdf
- Description:
- IC X4 SRAM NONVOL CTRLR 16-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,085
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Product details
Overview
BQ2204ASN-NTR from Texas Instruments is a CMOS SRAM nonvolatile controller unit that converts up to four banks of standard CMOS SRAM into battery-backed nonvolatile memory. It provides power-fail detection (VPFD = 4.62 V typical), <10 ns CE propagation delay, and dual 3V primary cell inputs (BC1/BC2) for seamless backup switching in industrial data retention systems.
For engineers reviewing the BQ2204ASN-NTR datasheet, BQ2204ASN-NTR pinout, BQ2204ASN-NTR application, or BQ2204ASN-NTR equivalent, key selection criteria include its 16-pin SOIC package, THS-selectable 5% or 10% supply tolerance detection threshold, VOUT-controlled SRAM write-protection timing (tCER = 120 ms max), and hardware-based A/B address decoding for multi-bank memory management.
Technical Context
The BQ2204ASN-NTR implements a precision comparator-based power-fail detection circuit with user-selectable VPFD thresholds (4.62 V at THS = VSS, 4.37 V at THS = VCC). Its internal switch alternates VOUT between BC1 and BC2 based on voltage differential exceeding VBSO (0.4 V typical), enabling sequential battery replacement without data loss.
During power-down, CECON1–CECON4 are forced high within tWPT (100 µs typical) to unconditionally write-protect SRAM; during power-up, outputs remain inactive for tCER (120 ms max) to ensure processor stabilization before CE transparency resumes with <10 ns propagation delay through the A/B decoder logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Supply Range | 4.75–5.5 V (THS = VSS); supports stable 5 V system operation with ±5% tolerance |
| VPFD Threshold | 4.62 V typical (THS = VSS); triggers SRAM write-protection before VCC drops below valid logic level |
| tCER Recovery Time | 120 ms maximum; ensures SRAM remains write-protected during processor reset and stabilization |
| tCED Propagation Delay | 7–10 ns; enables high-speed CE pass-through during normal operation without memory access latency penalty |
| VBC Input Range | 2.0–4.0 V; accepts standard 3 V lithium primary cells with margin for aging and temperature drift |
| VBSO Switch-over Delta | 0.4 V typical; guarantees automatic BC1→BC2 switchover only when voltage difference justifies energy transfer |
| IOUT Capability | 160 mA (VOUT > VCC − 0.3 V); sufficient to drive multiple SRAM bank VCC pins during backup mode |
Pinout & Package
Package: 16-pin SOIC (D), RoHS-compliant, moisture sensitivity level 2 (260°C reflow, 1 year floor life), marked "2204A".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | +5 V main supply input | Primary power source; monitored for out-of-tolerance condition to initiate backup sequence |
| VSS | Ground reference | Common return path for all digital and analog circuitry; required for THS threshold reference |
| BC1 / BC2 | 3 V primary battery inputs | Accept non-rechargeable lithium cells; internal comparator selects higher-voltage source for VOUT |
| VOUT | Backup power output | Switches to BC1 or BC2 during power failure; supplies CECON outputs and external SRAM VCC pins |
| CE | Chip-enable active-low input | Controls transparent pass-through to CECONx during power-valid operation; initiates isolation if held low across VPFD/VSO |
| A / B | Decoder address inputs | Select one of four CECON outputs (CECON1–CECON4) using standard 2-bit binary encoding |
| CECON1–CECON4 | Conditioned chip-enable outputs | Active-low outputs driven by VOUT during backup; forced high during power-fail to write-protect SRAM banks |
| THS | Threshold select input | Tied to VSS or VCC to set VPFD at 4.62 V (5%) or 4.37 V (10%); must not float |
Key Features
| Feature | Design Value |
|---|---|
| Dual 3V battery arbitration | Automatically switches VOUT between BC1 and BC2 when voltage difference exceeds 0.4 V, enabling hot-swap battery replacement |
| Configurable power-fail threshold | THS pin selects 4.62 V (5% tolerance) or 4.37 V (10% tolerance) VPFD, matching system supply specification |
| Guaranteed SRAM write-protection | tWPT = 100 µs typical ensures memory cycle completion before unconditional CECON deassertion during brownout |
| Hardware address decoding | A/B inputs directly map to CECON1–CECON4 outputs without firmware or external logic, reducing BOM and layout complexity |
| Controlled power-up recovery | tCER = 120 ms max hold-off prevents premature SRAM access until host processor exits reset and stabilizes |
Applications
| Industrial PLC Data Logger | Medical Device Parameter Storage |
|---|---|
Use Scenario: Retaining real-time sensor calibration and operational history during unexpected AC mains loss. IC Role / Device Role / Timing Role: Nonvolatile controller managing four 64K×8 SRAM banks; detects VCC sag and asserts CECON outputs within 100 µs to halt writes. Use Value: Prevents corruption of critical configuration data during 10–200 ms brownout events common in factory-floor power distribution. | Use Scenario: Preserving patient therapy settings and treatment logs in infusion pumps during battery swap or power interruption. IC Role / Device Role / Timing Role: Dual-cell backup supervisor providing uninterrupted VOUT to SRAM and enforcing write-protection via CECON outputs during transition. Use Value: Enables safe, single-battery replacement without powering down the device-meeting IEC 62304 Class C software safety requirements. |
| Telecom Base Station Clock Buffer | Avionics Flight Data Recorder |
Use Scenario: Maintaining time-of-day clock registers and network synchronization state during redundant PSU switchover. IC Role / Device Role / Timing Role: Power-fail detector with <10 ns CE propagation delay ensuring zero-cycle memory access disruption during nominal operation. Use Value: Eliminates need for external glue logic or FPGA-based backup control, reducing design risk and qualification effort. | Use Scenario: Securing last 30 seconds of flight telemetry in SRAM prior to crash-induced power loss. IC Role / Device Role / Timing Role: Battery-isolation controller triggered by CE signal crossing 0.5×VCC during rapid VCC collapse, initiating VOUT holdover. Use Value: Meets DO-160 Section 22 crash survivability requirements by guaranteeing SRAM data integrity down to 0.5 V VCC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM nonvolatile controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1230Y-120+ | Integrated lithium battery + NVSRAM die in DIP-28; no external SRAM required; fixed 120 ns access time | Self-contained solution for ≤128 KB memory; no A/B decoding or dual-cell support | Choose DS1230Y-120+ when board space is constrained and memory size is fixed under 128 KB. |
| BQ2022A | Single 3V backup input; no BC1/BC2 arbitration; lacks THS-selectable VPFD; uses different decode architecture | Designed for simpler single-bank SRAM backup; lower pin count (8-pin SOIC); no VOUT current rating published | Choose BQ2022A only for cost-sensitive, single-SRAM-bank designs where dual-battery redundancy is unnecessary. |
Compared with DS1230Y-120+ and BQ2022A, the BQ2204ASN-NTR uniquely supports four independently controlled SRAM banks, dual 3V battery arbitration with 0.4 V switchover hysteresis, and user-configurable power-fail threshold-making it the only option for scalable, field-serviceable nonvolatile memory systems requiring >128 KB capacity and hot-swap capability.
Availability
BQ2204ASN-NTR is available at Aetrix Electronics and suitable for industrial PLC data loggers, medical infusion pump parameter storage, and telecom base station clock buffers requiring stable component supply across extended product lifecycles.
Supply support for BQ2204ASN-NTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets.
The BQ2204ASN-NTR belongs to TI's legacy battery-management and nonvolatile memory controller product line, designed specifically for industrial and medical systems requiring deterministic, hardware-based SRAM backup without firmware dependency.
FAQ
What is the function of the THS pin on the BQ2204ASN-NTR?
The THS pin on the BQ2204ASN-NTR selects the power-fail detection threshold: when tied to VSS, VPFD = 4.62 V (5% tolerance); when tied to VCC, VPFD = 4.37 V (10% tolerance). It must be hard-wired to either rail-floating causes undefined behavior. This setting directly determines the VCC sag level at which the BQ2204ASN-NTR initiates SRAM write-protection and backup switchover.
Can the BQ2204ASN-NTR support more than two backup batteries?
No-the BQ2204ASN-NTR supports exactly two 3V primary cell inputs (BC1 and BC2) and alternates VOUT between them based on voltage comparison. It does not support three or more batteries, nor does it provide charging circuitry. The BQ2204ASN-NTR is designed exclusively for non-rechargeable lithium cells; connecting rechargeable batteries may damage the device or cause unsafe operation.
How does the BQ2204ASN-NTR ensure SRAM data integrity during a power failure?
The BQ2204ASN-NTR ensures SRAM data integrity by forcing CECON1–CECON4 high within 100 µs (tWPT typical) after VCC crosses VPFD, halting all write cycles. If an active memory access is in progress, it completes before protection engages. Simultaneously, VOUT switches to BC1 or BC2 to maintain SRAM VCC, preserving read/write state. This coordinated action prevents partial writes and bit corruption during brownout.
What is the maximum load current supported by the VOUT pin of the BQ2204ASN-NTR?
The VOUT pin of the BQ2204ASN-NTR supports up to 160 mA when VOUT > VCC − 0.3 V, and 100 µA when VOUT > VBC − 0.2 V. This rating is sufficient to power the VCC pins of multiple standard CMOS SRAM devices (e.g., four 62256-style 32K×8 SRAMs drawing ~20 mA each). Exceeding 160 mA risks VOUT droop and unreliable CECON output levels.
Is the BQ2204ASN-NTR pin-compatible with earlier BQ2204 variants?
Yes-the BQ2204ASN-NTR is functionally and pin-compatible with the original BQ2204A in SOIC-16 packaging. The "NTR" suffix denotes tape-and-reel packaging (2500 units per reel), while electrical specifications, pinout, and timing parameters match the BQ2204ASN family. No PCB layout changes are required when upgrading from BQ2204ASN to BQ2204ASN-NTR.
BQ2204ASN-NTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Controller Type:
- Nonvolatile SRAM
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
BQ2204ASN-NTR FAQ
1.How can I place an order for BQ2204ASN-NTR through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ2204ASN-NTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ2204ASN-NTR reliable?
The price and inventory of BQ2204ASN-NTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ2204ASN-NTR is usually 5 days.
3.What payment methods are accepted for BQ2204ASN-NTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ2204ASN-NTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ2204ASN-NTR?
BQ2204ASN-NTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ2204ASN-NTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ2204ASN-NTR?
For technical support, including BQ2204ASN-NTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ2204ASN-NTR requirements.
6.How does Aetrix verify that BQ2204ASN-NTR is sourced from the original manufacturer or authorized distributors?
All BQ2204ASN-NTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ2204ASN-NTR meets industry standards.
7.What is the process for return or replacement of BQ2204ASN-NTR?
All BQ2204ASN-NTR units undergo pre-shipment inspection (PSI). If there is an issue with BQ2204ASN-NTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ2204ASN-NTR part is unused and in its original packaging.
Return procedure for BQ2204ASN-NTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BQ2204ASN-NTR Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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