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Texas Instruments BQ2204ASN-NTRG4
- Part No.:
- BQ2204ASN-NTRG4
- Manufacturer:
- Texas Instruments
- Category:
- Controllers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BQ2204ASN-NTRG4.pdf
- Description:
- IC SRAM NONVOLATILE CTRLR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,498
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Product details
Overview
BQ2204ASN-NTRG4 from Texas Instruments is a CMOS SRAM nonvolatile controller unit that converts up to four banks of standard CMOS SRAM into battery-backed nonvolatile memory. It provides power-fail detection (VPFD = 4.62 V typical), conditioned chip-enable outputs (CECON1–CECON4), and automatic switching between two 3V primary backup cells (BC1/BC2) with 0.4 V battery switch-over threshold (VBSO). It is used in industrial instrumentation and embedded systems requiring data retention during AC power loss.
For engineers reviewing the BQ2204ASN-NTRG4 datasheet, BQ2204ASN-NTRG4 pinout, BQ2204ASN-NTRG4 application, or BQ2204ASN-NTRG4 equivalent, key selection considerations include its 10 ns CE propagation delay, dual 3V backup cell support, THS-selectable 5%/10% supply tolerance detection, 120 ms CE recovery time (tCER), and SOIC-16 package compatibility with legacy memory backup designs.
Technical Context
The BQ2204ASN-NTRG4 implements hardware-based nonvolatility by combining precision voltage monitoring, analog switching control, and address decoding logic. Its internal comparator detects VCC out-of-tolerance conditions relative to VPFD (4.37 V or 4.62 V), triggering immediate CECON deactivation and VOUT source switching from VCC to BC1 or BC2 based on real-time voltage comparison.
During power-up, the device enforces a fixed 120 ms write-protection window (tCER) before enabling CE pass-through, and supports transparent bank selection via A/B decode inputs with <10 ns propagation delay. Battery isolation is enforced via CE timing constraints during VCC slewing between VPFD and VSO, preventing unintended discharge.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Supply Range | 4.50–5.5 V (THS = VCC) or 4.75–5.5 V (THS = VSS); defines valid operating window for main system rail |
| VPFD Threshold | 4.37 V typical (10% mode) or 4.62 V typical (5% mode); sets precise power-fail detection point for SRAM write-protection |
| tCED Propagation Delay | 7–10 ns; ensures minimal latency in CE-to-CECON path during active memory access |
| VBSO Switch-over Voltage | 0.25–0.6 V; enables automatic switchover from BC1 to BC2 only when voltage differential exceeds this guardband |
| tCER Recovery Time | 40–120 ms; guarantees SRAM remains write-protected during processor stabilization after power restoration |
| IOUT1 Max Output Current | 160 mA (VOUT > VCC − 0.3 V); supports driving multiple SRAM banks and associated load capacitance |
| ICC Operating Current | 3–6 mA (no load); determines baseline system power budget during active operation |
Pinout & Package
Package: SOIC-16 (D package), 16-pin narrow-body surface-mount, RoHS-compliant, MSL Level-2-260°C-1 year.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | +5 V main supply input | Primary power rail monitored for out-of-tolerance condition; powers internal logic and drives CECON outputs during normal operation |
| VSS | Ground reference | Common return path for all internal circuitry and output drivers; required for comparator reference stability |
| BC1 / BC2 | 3 V primary backup cell inputs | Accept non-rechargeable lithium cells; device selects higher-voltage source and switches VOUT automatically when difference exceeds VBSO |
| VOUT | Backup supply output | Delivers regulated 3 V backup power to SRAM VCC pins and CECON pull-ups during power failure; sourced from BC1 or BC2 |
| CE | Chip-enable active-low input | Primary memory access control signal; passed through to selected CECON output with <10 ns delay during power-valid operation |
| A / B | Decoder address inputs | Select one of four CECON outputs (CECON1–CECON4); typically tied to high-order address lines for banked memory mapping |
| CECON1–CECON4 | Conditioned chip-enable outputs | Active-low outputs that drive SRAM CE pins; forced high during power fail to unconditionally write-protect all banks |
| THS | Threshold select input | Configures VPFD: tied to VSS → 4.62 V (5% mode); tied to VCC → 4.37 V (10% mode); must be hard-wired, not floated |
| NC | No-connect terminal | Unused pins (pins 8, 11, 13); must remain unconnected per design; no internal connection or function |
Key Features
| Feature | Design Value |
|---|---|
| Dual 3V backup cell management | Automatically alternates VOUT sourcing between BC1 and BC2 based on real-time voltage comparison with 0.4 V hysteresis, enabling hot-swappable battery replacement |
| Programmable power-fail threshold | THS pin selects between 4.37 V (10% mode) or 4.62 V (5% mode) VPFD, allowing alignment with system-level supply tolerance requirements |
| Guaranteed write-protection timing | tWPT = 40–150 µs ensures SRAM write-protection initiates within defined window after VCC crosses VPFD, preventing partial writes during brownout |
| Hardware-based bank decoding | A/B inputs enable direct mapping of up to four SRAM banks without external logic or firmware overhead, reducing BOM count and layout complexity |
| Controlled power-up sequencing | tCER = 40–120 ms enforces mandatory CE disable period after VCC rises above VPFD, eliminating race conditions during microcontroller reset and initialization |
Applications
| Industrial Data Loggers | Medical Diagnostic Equipment |
|---|---|
|
Use Scenario: Continuous acquisition of sensor readings during mains power interruption, preserving timestamped waveform data. IC Role / Device Role / Timing Role: Nonvolatile controller managing SRAM banks storing real-time ECG or pressure waveforms; triggers write-protection at VPFD and sustains VOUT from BC1/BC2. Use Value: Guarantees zero-data-loss retention for ≥10 years using primary lithium cells, meeting IEC 62304 Class C software safety requirements. |
Use Scenario: Maintaining calibration coefficients and patient history in portable ultrasound units during battery swaps or AC dropout. IC Role / Device Role / Timing Role: Hardware-enforced SRAM write-protection and dual-cell switchover ensure calibration integrity across power transitions without host CPU intervention. Use Value: Eliminates need for EEPROM wear leveling or flash programming cycles, reducing firmware complexity and qualification effort. |
| Telecom Base Station Controllers | Programmable Logic Controllers (PLCs) |
|
Use Scenario: Preserving configuration registers and alarm logs in remote radio units during grid instability or generator switchover. IC Role / Device Role / Timing Role: Monitors 5 V backplane supply and activates CECON outputs to freeze SRAM contents before VCC falls below 4.37 V (10% mode). Use Value: Enables deterministic recovery within 120 ms of power restoration, satisfying ITU-T G.8262 holdover timing compliance. |
Use Scenario: Retaining ladder logic state and I/O mapping tables during factory floor power flicker or emergency shutdown. IC Role / Device Role / Timing Role: Provides hardware-level SRAM protection independent of PLC CPU status; uses A/B decoding to map discrete I/O modules to dedicated SRAM banks. Use Value: Prevents spurious relay actuation or process faults caused by corrupted memory during brownout events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM nonvolatile controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX690A | Single 3V backup input; no dual-cell switching; fixed 4.65 V reset threshold; no A/B decoder; 200 ns propagation delay | Limited to single-bank SRAM; lacks hardware bank selection; suited for simpler, lower-cost backup schemes | Select when only one SRAM bank and basic power-monitoring suffices; avoid if dual-cell longevity or multi-bank decoding is required |
| DS1230Y | Integrated NV SRAM (256Kbit); no external SRAM support; 100 ns access time; no CECON conditioning or THS configurability | Replaces SRAM + controller with monolithic solution; eliminates board space but fixes memory size and lacks flexibility | Select when memory density is fixed and board area is constrained; avoid if scalable bank architecture or configurable VPFD is needed |
Compared with BQ2204ASN-NTRG4, MAX690A offers simpler integration but lacks bank decoding and dual-cell management, while DS1230Y integrates memory but removes design flexibility-BQ2204ASN-NTRG4 uniquely balances scalability, configurability, and hardware autonomy for multi-bank industrial SRAM backup.
Availability
BQ2204ASN-NTRG4 is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic equipment, telecom base station controllers, and programmable logic controllers requiring stable component supply and long-term obsolescence support.
Supply support for BQ2204ASN-NTRG4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and communications markets.
The BQ2204ASN-NTRG4 belongs to TI's legacy power management and nonvolatile memory controller product line, designed specifically to enable reliable, low-maintenance SRAM battery backup in commercial and industrial environments without firmware dependency.
FAQ
What is the function of the THS pin on the BQ2204ASN-NTRG4?
The THS pin on the BQ2204ASN-NTRG4 selects the power-fail detection threshold: when tied to VSS, it configures VPFD to 4.62 V (5% supply tolerance mode); when tied to VCC, it sets VPFD to 4.37 V (10% mode). This pin must be hard-wired to either rail-floating or intermediate voltages cause undefined behavior. The BQ2204ASN-NTRG4 relies on this setting to determine precisely when to initiate SRAM write-protection and backup switching.
How does the BQ2204ASN-NTRG4 manage two backup batteries (BC1 and BC2)?
The BQ2204ASN-NTRG4 continuously compares BC1 and BC2 voltages and sources VOUT from the higher-voltage cell, switching only when the difference exceeds VBSO (0.25–0.6 V). This ensures optimal utilization of both primary lithium cells and allows field replacement of one battery without interrupting data retention. During power failure, the BQ2204ASN-NTRG4 isolates inactive cells using internal switching to prevent leakage, extending total backup runtime.
What is the purpose of the tCER parameter in the BQ2204ASN-NTRG4 datasheet?
The tCER (chip-enable recovery time) parameter specifies the minimum duration-40 to 120 ms-during which CECON outputs remain inactive after VCC rises above VPFD during power-up. This enforced delay ensures the host processor has fully stabilized before memory access resumes, preventing premature read/write operations that could corrupt SRAM contents. For the BQ2204ASN-NTRG4, tCER is independent of CE input state and guaranteed across temperature and voltage.
Can the BQ2204ASN-NTRG4 support more than four SRAM banks?
No-the BQ2204ASN-NTRG4 supports exactly four SRAM banks via its four conditioned chip-enable outputs (CECON1–CECON4) and two-bit A/B decoder. Each CECON output drives one bank's CE pin, and the truth table defines strict 1:1 mapping. To expand beyond four banks, multiple BQ2204ASN-NTRG4 devices must be cascaded with additional address decoding logic; the BQ2204ASN-NTRG4 itself does not support daisy-chaining or extended decoding.
Is the BQ2204ASN-NTRG4 compatible with modern 3.3 V SRAM devices?
The BQ2204ASN-NTRG4 is designed for 5 V SRAM systems: its CECON outputs swing from VOUT (≈3 V) to VSS, and its VCC input requires 4.5–5.5 V. While some 3.3 V SRAMs tolerate 3 V CE signals, the BQ2204ASN-NTRG4 lacks level-shifting or 3.3 V VCC support. Using it with 3.3 V SRAM requires verifying CE input thresholds and ensuring VOUT-sourced CECON logic levels meet VIH/VIL specs-direct compatibility is not guaranteed, and the BQ2204ASN-NTRG4 datasheet specifies operation only with 5 V CMOS SRAM.
BQ2204ASN-NTRG4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Controller Type:
- Nonvolatile SRAM
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
BQ2204ASN-NTRG4 FAQ
1.How can I place an order for BQ2204ASN-NTRG4 through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ2204ASN-NTRG4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ2204ASN-NTRG4 reliable?
The price and inventory of BQ2204ASN-NTRG4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ2204ASN-NTRG4 is usually 5 days.
3.What payment methods are accepted for BQ2204ASN-NTRG4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ2204ASN-NTRG4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ2204ASN-NTRG4?
BQ2204ASN-NTRG4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ2204ASN-NTRG4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ2204ASN-NTRG4?
For technical support, including BQ2204ASN-NTRG4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ2204ASN-NTRG4 requirements.
6.How does Aetrix verify that BQ2204ASN-NTRG4 is sourced from the original manufacturer or authorized distributors?
All BQ2204ASN-NTRG4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ2204ASN-NTRG4 meets industry standards.
7.What is the process for return or replacement of BQ2204ASN-NTRG4?
All BQ2204ASN-NTRG4 units undergo pre-shipment inspection (PSI). If there is an issue with BQ2204ASN-NTRG4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ2204ASN-NTRG4 part is unused and in its original packaging.
Return procedure for BQ2204ASN-NTRG4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BQ2204ASN-NTRG4 Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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