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Texas Instruments BQ2205LYPWG4
- Part No.:
- BQ2205LYPWG4
- Manufacturer:
- Texas Instruments
- Category:
- Controllers
- Package:
- 16-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
BQ2205LYPWG4.pdf
- Description:
- IC CTRLR SRAM NONVOLITL 16-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,309
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Product details
Overview
BQ2205LYPWG4 from Texas Instruments is a CMOS SRAM non-volatile controller with integrated reset, designed to convert standard CMOS SRAM into battery-backed non-volatile memory. It supports one or two banks of SRAM, provides 3.3-V operation with 3-V primary cell backup, delivers <20-ns chip-enable propagation delay, and features dual conditioned CE outputs (CECON1/CECON2) for unconditional write-protection during power failure - used in NVSRAM modules and medical instrumentation.
For engineers reviewing the BQ2205LYPWG4 datasheet, BQ2205LYPWG4 pinout, BQ2205LYPWG4 application, or BQ2205LYPWG4 equivalent, key selection criteria include VPFD = 2.9 V (±50 mV), tCER = 30–85 ms write-protect hold time after power-up, VOUT switching between VCC and BCP, RST open-drain reset timing, and TSSOP-16 package compatibility with industrial temperature range (−20°C to 70°C).
Technical Context
The BQ2205LYPWG4 implements precision voltage monitoring with dual thresholds: VPFD = 2.9 V (power-fail detect) and VSO = VPFD or VBC (supply switch-over). During VCC decay, it forces CECON1/CECON2 inactive independent of CE input, then switches VOUT from VCC to BCP when VCC falls below VPFD and BCP > VPFD.
At power-up, VOUT transitions back to VCC once VCC exceeds VPFD; CECON1/CECON2 remain inactive for tCER (30–85 ms) to ensure processor stabilization. Bank selection via A input enables hardware decoding of two SRAM banks using address-line routing, with CE passed through to CECON1 or CECON2 based on A level per truth table.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC operating range | 3.0 V to 3.6 V - defines valid main supply window for reliable SRAM interface and internal logic operation |
| VPFD threshold | 2.85 V to 2.95 V - precise undervoltage detection point triggering automatic SRAM write-protection and VOUT switchover |
| tCED propagation delay | 15 ns to 25 ns - ensures fast, deterministic CE signal transfer to external SRAM during normal operation |
| tCER protection hold time | 30 ms to 85 ms - guarantees SRAM remains write-protected after VCC recovery until system CPU stabilizes |
| VOUT output capability | 80 mA at VCC−0.3 V - sufficient to power typical low-density CMOS SRAM banks without external regulation |
| ICC(VCC) supply current | 210 µA to 500 µA - ultra-low quiescent draw enabling long-term battery backup without significant drain |
| ICC(BC) backup current | 50 nA to 150 nA - minimal leakage during backup mode preserves primary cell life for years |
Pinout & Package
Package: 16-pin TSSOP (PW), 4.4 mm × 5.0 mm body, 0.65 mm pitch, 1.2 mm max height, JEDEC MO-153 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A | Bank select input | Logic-level input determining which CECONx output (CECON1 or CECON2) mirrors CE; enables hardware-based dual-bank addressing |
| BCP | Backup cell input | Accepts 2.0 V–4.0 V primary lithium cell; powers VOUT and BW/RST during main supply failure |
| BW | Battery warning output | Open-drain output latched low if VBW = 0.677×VCC is not met at power-up - signals low battery condition |
| CE | Chip enable input | Active-low control signal passed to CECONx during power-valid operation; overridden during power fail |
| CECON1 / CECON2 | Conditioned CE outputs | Active-low outputs driving SRAM CE pins; forced high/inactive during power transition to enforce write-protection |
| RST | Reset output | Open-drain power-on/power-fail reset signal held low for tRST = 30–85 ms after VCC crosses VPFD |
| VOUT | SRAM supply output | Switched output sourcing SRAM VCC; automatically transitions between VCC and BCP based on VPFD/VSO thresholds |
| VCC | Main supply input | 3.3-V nominal input monitored for out-of-tolerance; powers internal logic and drives VOUT when valid |
| VSS | Ground | Three dedicated ground pins (pins 4, 5, 8) - support low-noise layout and separate analog/digital grounding |
Key Features
| Feature | Design Value |
|---|---|
| Dual bank SRAM control | Hardware-decoded bank selection via A input eliminates need for external logic or microcontroller intervention |
| Automatic VOUT switchover | Seamless transition between main and backup supplies without glitch or brownout - maintains SRAM data integrity |
| Unconditional write-protection | CECON1/CECON2 forced inactive during VCC decay regardless of CE state - prevents corruption during power loss |
| Integrated power-on reset | RST output provides guaranteed reset pulse (tRST = 30–85 ms) synchronized to VPFD crossing - ensures CPU boot reliability |
| Battery health monitoring | BW pin latches low-battery status at power-up using factory-trimmed 0.677×VCC threshold - enables field maintenance alerts |
Applications
| Point-of-Sale Terminals | Medical Diagnostic Devices |
|---|---|
|
Use Scenario: Transaction data retention during unexpected AC loss or battery swap in retail terminals. IC Role / Device Role / Timing Role: Non-volatile controller managing SRAM banks storing pending receipts, inventory updates, and audit logs. Use Value: Prevents transaction loss and ensures regulatory compliance by guaranteeing SRAM write-protection within 2.9 V VPFD threshold and holding CE inactive for ≥30 ms post-recovery. |
Use Scenario: Preserving real-time patient waveform buffers and calibration settings during brief power interruptions in ECG or ultrasound units. IC Role / Device Role / Timing Role: Power-fail supervisor and SRAM backup manager ensuring zero-data-loss memory retention. Use Value: Delivers <20-ns CE propagation and 80-mA VOUT drive to sustain multiple SRAM banks without external regulators - critical for FDA-cleared device continuity. |
| Industrial Printers & Copiers | Servers with Persistent Configuration |
|
Use Scenario: Maintaining print job queues and firmware configuration across power cycles in networked multifunction devices. IC Role / Device Role / Timing Role: Dual-bank SRAM controller enabling large nonvolatile memory expansion using commodity SRAM chips. Use Value: Uses A-input decoding to split memory space across two banks - reduces BOM cost vs. monolithic NVSRAM while meeting IEC 61000-4-2 ESD immunity requirements. |
Use Scenario: Storing BIOS/UEFI variables, RAID metadata, and hardware security keys in server motherboards with redundant PSUs. IC Role / Device Role / Timing Role: System-level power supervisor providing coordinated RST assertion and SRAM write-protection during PSU switchover. Use Value: tCER = 30–85 ms hold time ensures memory remains protected until BMC or host CPU completes initialization - preventing config corruption during failover. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM non-volatile controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX6900APL+ | Single-bank only; no A-input bank decode; uses external capacitor for reset timeout; higher ICC(VCC) = 1.2 mA | Limited to smaller memory footprints; lacks dual CE outputs and automatic VOUT switchover logic | Select when cost sensitivity outweighs dual-bank flexibility and ultra-low backup current is not required |
| DS1230Y-100+ | Standalone NVSRAM IC (512Kbit); integrates SRAM + controller + lithium battery in one module; no external SRAM support | Eliminates board-level integration effort but fixes memory size and increases footprint/cost | Choose for rapid prototyping or low-volume designs where fixed capacity and simplified layout justify premium pricing |
Compared with MAX6900APL+ and DS1230Y-100+, the BQ2205LYPWG4 uniquely supports scalable dual-bank SRAM expansion with sub-20-ns timing, 50-nA backup current, and hardware bank selection - making it optimal for cost-sensitive, high-reliability embedded systems requiring field-upgradable memory configurations.
Availability
BQ2205LYPWG4 is available at Aetrix Electronics and suitable for NVSRAM modules, medical instrumentation, and industrial printers requiring stable component supply, long-lifecycle support, and RoHS-compliant TSSOP packaging.
Supply support for BQ2205LYPWG4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with emphasis on reliability, longevity, and industrial-grade performance.
The BQ2205LYPWG4 belongs to TI's legacy power management and non-volatile memory interface product line, engineered specifically for robust, low-power SRAM backup in mission-critical industrial and medical equipment.
FAQ
What is the exact function of the A input pin on the BQ2205LYPWG4?
The A input pin on the BQ2205LYPWG4 selects which conditioned chip-enable output (CECON1 or CECON2) mirrors the CE input during power-valid operation. When A is low, CE drives CECON1; when A is high, CE drives CECON2 - enabling hardware-based dual-bank SRAM addressing without software or external logic. This function is confirmed in the truth table and functional description of the BQ2205LYPWG4 datasheet.
Does the BQ2205LYPWG4 support rechargeable backup batteries?
No, the BQ2205LYPWG4 is explicitly designed for non-rechargeable 3-V primary cells (e.g., lithium thionyl chloride) on the BCP pin. Its backup input circuitry lacks charge control or overvoltage protection required for rechargeables. Using a rechargeable battery may cause overdischarge, leakage, or premature failure - the BQ2205LYPWG4 datasheet specifies 2.0 V–4.0 V BCP range and cites "primary cell" usage exclusively.
How does the BQ2205LYPWG4 handle VOUT switchover during power-up?
During power-up, the BQ2205LYPWG4 switches VOUT from the backup supply (BCP) back to VCC once VCC rises above VPFD (2.9 V). If BCP > VPFD, switchover occurs at VPFD; otherwise, it occurs when VCC exceeds BCP. CECON1/CECON2 remain inactive for tCER (30–85 ms) after VPFD crossing to prevent premature SRAM access - a behavior verified in the power-up timing diagram and functional description of the BQ2205LYPWG4.
What is the purpose of the BW pin on the BQ2205LYPWG4?
The BW (Battery Warning) pin on the BQ2205LYPWG4 is an open-drain output that latches low if the backup cell voltage fails to meet VBW = 0.677×VCC during power-up. This provides a hardware flag for low-battery detection, allowing system firmware to trigger maintenance alerts. The latching occurs at tCER after VPFD crossing - a feature documented in the Electrical Characteristics and Functional Description sections of the BQ2205LYPWG4 datasheet.
Can the BQ2205LYPWG4 be used with 5-V SRAM devices?
No, the BQ2205LYPWG4 is rated for 3.3-V operation only, with absolute maximum VCC of 6.0 V and recommended VCC range of 3.0 V–3.6 V. Its VOUT output follows VCC or BCP (2.0 V–4.0 V), and CECONx outputs have VOH = 2.4 V (min) at 0.5 mA - insufficient to reliably drive 5-V TTL or CMOS SRAM inputs. Using it with 5-V SRAM risks logic-level incompatibility and data corruption, as confirmed by the Recommended Operating Conditions and Electrical Characteristics tables for the BQ2205LYPWG4.
BQ2205LYPWG4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 16-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Controller Type:
- Nonvolatile SRAM
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -20°C ~ 70°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-TSSOP
BQ2205LYPWG4 FAQ
1.How can I place an order for BQ2205LYPWG4 through Aetrix?
Please submit a Request for Quotation (RFQ) for BQ2205LYPWG4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BQ2205LYPWG4 reliable?
The price and inventory of BQ2205LYPWG4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BQ2205LYPWG4 is usually 5 days.
3.What payment methods are accepted for BQ2205LYPWG4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BQ2205LYPWG4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BQ2205LYPWG4?
BQ2205LYPWG4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BQ2205LYPWG4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BQ2205LYPWG4?
For technical support, including BQ2205LYPWG4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BQ2205LYPWG4 requirements.
6.How does Aetrix verify that BQ2205LYPWG4 is sourced from the original manufacturer or authorized distributors?
All BQ2205LYPWG4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BQ2205LYPWG4 meets industry standards.
7.What is the process for return or replacement of BQ2205LYPWG4?
All BQ2205LYPWG4 units undergo pre-shipment inspection (PSI). If there is an issue with BQ2205LYPWG4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BQ2205LYPWG4 part is unused and in its original packaging.
Return procedure for BQ2205LYPWG4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BQ2205LYPWG4 Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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