Texas Instruments BQ24314DSJT

Overview

BQ24314DSJT from Texas Instruments is a Li-ion battery front-end protection IC that provides integrated input overvoltage (5.71–6.0 V), user-programmable input overcurrent (300–1500 mA), and battery overvoltage (4.30–4.40 V) protection in a space-saving 8-pin 2 × 2 mm WSON package. It operates across 3.3–26 V input, supports up to 1.5-A continuous current, and delivers rapid <1 μs OVP response for mobile phone and smart device charging circuits.

For engineers reviewing the BQ24314DSJT datasheet, BQ24314DSJT pinout, BQ24314DSJT application, or BQ24314DSJT equivalent, key selection criteria include its programmable OCP threshold via ILIM resistor, open-drain FAULT status output, thermal shutdown at 140–150°C, enable-controlled operation, and compatibility with AC adapter-based Li+ charging systems requiring robust fault isolation.

Technical Context

The BQ24314DSJT integrates three independent protection channels: an input overvoltage comparator with 5.71–6.0 V threshold and 25–110 mV hysteresis, a current-sense amplifier with blanking time (176 μs) and recovery delay (64 ms) for OCP, and a fixed 4.35-V battery overvoltage detector with 200–320 mV hysteresis. All protections drive a single open-drain FAULT pin.

It employs internal P-FET control logic with soft-start and soft-stop behavior to suppress inrush and cable-inductance-induced ringing. The CE pin enables full system-level control: disabling resets OCP and Bat-OVP counters, disables FAULT output, and places the device in low-standby-current (65–95 μA) mode.

Key Specifications

Pinout & Package

Package: 8-pin WSON (DSJ suffix), 2.00 mm × 2.00 mm body, exposed thermal pad electrically connected to VSS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Li+ front-end protection applications.

Compared with BQ24316DSG, the BQ24314DSJT offers tighter input overvoltage protection for 5-V adapter ecosystems; compared with BQ24080DGQR, it provides dedicated, low-quiescent, programmable protection without integrating charge control-enabling modular, optimized power architecture design.

Availability

BQ24314DSJT is available at Aetrix Electronics and suitable for mobile phones, Bluetooth headsets, and portable media players requiring stable component supply, long-term lifecycle support, and automotive-grade reliability validation.

Supply support for BQ24314DSJT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with emphasis on power management and battery safety.

The BQ24314DSJT belongs to TI's bq2431x family of Li+ front-end protection ICs, designed specifically to safeguard charging systems from adapter faults, current surges, and battery overvoltage in portable consumer electronics.

FAQ

What is the exact input overvoltage protection threshold for BQ24314DSJT?

The BQ24314DSJT has a guaranteed input overvoltage protection threshold of 5.71 V minimum, 5.85 V typical, and 6.0 V maximum at 25°C. This threshold is factory-trimmed and exhibits ±0.1 V temperature drift across –40°C to 125°C junction range. The device responds within <1 μs to disable the internal FET and assert the FAULT pin low when VIN exceeds this threshold.

How do I configure the input overcurrent limit for BQ24314DSJT?

Configure the input overcurrent limit for BQ24314DSJT by connecting a resistor (RILIM) between the ILIM pin and VSS. For example, a 25-kΩ resistor sets the threshold to 930–1070 mA. The relationship follows IOCP ≈ 25 ÷ RILIM (with current in A and resistance in kΩ). Use values from 15 kΩ (1500 mA) to 90 kΩ (300 mA), and ensure the resistor tolerance is ≤1% for accurate current limiting.

Does BQ24314DSJT require external components for basic operation?

Yes, BQ24314DSJT requires at minimum: a 1-μF ceramic input capacitor (CIN) near the IN pin, a 1-μF ceramic output capacitor (COUT) near the OUT pin, a pull-up resistor on the FAULT pin (e.g., 10–100 kΩ), and optionally a resistor on ILIM for OCP setting. The CE pin may be left floating (enabled by internal pulldown) or grounded. No external FET is needed-the power switch is fully integrated.

Can BQ24314DSJT be used without connecting the VBAT pin?

No-VBAT must be connected for battery overvoltage protection to function. If Bat-OVP is not required, TI specifies that VBAT must be tied directly to VSS. Leaving VBAT floating violates absolute maximum ratings and risks incorrect fault detection or latch-up. For safety-critical designs, TI recommends using a 100–470 kΩ resistor (RBAT) between VBAT and battery positive to limit fault current.

What happens to the FAULT pin during thermal shutdown of BQ24314DSJT?

During thermal shutdown, the BQ24314DSJT drives the FAULT pin low (active state) just as it does for input overvoltage, input overcurrent, or battery overvoltage events. The FAULT pin remains low until the junction temperature falls below TJ(OFF) – TJ(OFF-HYS) (i.e., ~120–130°C), at which point the FET resumes conduction and FAULT returns to high-impedance (Hi-Z) state-provided no other fault condition persists.